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Toshiba Semiconductor and Storage 1SS361CT(TPL3)
- Part No.:
- 1SS361CT(TPL3)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Diode Arrays
- Package:
- SC-101, SOT-883
- Datasheet:
-
1SS361CT(TPL3).pdf
- Description:
- DIODE ARRAY GP 80V 100MA CST3
- Quantity:
- Payment:
- Shipping:
Inventory:132
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Product details
Overview
1SS361CT(TPL3) from TOSHIBA is a dual-anode silicon epitaxial planar Schottky barrier diode optimized for ultra-high-speed switching in RF and digital signal paths, featuring VF(3)=0.9 V (typ.) at 100 mA, trr=1.6 ns (typ.), CT=0.9 pF (typ.), VR=80 V, and IFM=300 mA per anode. It serves as a high-frequency clamp or steering diode in 5G front-end modules and high-speed logic level translators.
For engineers reviewing the 1SS361CT(TPL3) datasheet, 1SS361CT(TPL3) pinout, 1SS361CT(TPL3) application, or 1SS361CT(TPL3) equivalent, key selection criteria include reverse recovery time under 2 ns, sub-1-pF junction capacitance at 0 V, dual-anode configuration for bidirectional clamping, low forward voltage at 100 mA, and CST3 surface-mount package compatibility with high-density RF layouts.
Technical Context
This dual-anode Schottky diode integrates two independent anodes sharing a common cathode in a single CST3 package, enabling symmetrical clamping or OR-ing functions without external wiring. Its epitaxial planar structure minimizes minority carrier storage, achieving trr ≤ 1.6 ns and supporting operation up to 3 GHz in small-signal switching roles.
Designed for low-voltage, high-frequency environments, the 1SS361CT(TPL3) maintains stable VF across 1–100 mA (0.60–0.90 V typ.) and exhibits IR ≤ 0.5 μA at VR = 80 V, ensuring minimal leakage in battery-sensitive or precision bias networks.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Voltage (VR) | 80 V - supports rail-to-rail clamping in 48 V telecom and 24 V industrial control interfaces |
| Forward Voltage VF(3) | 0.9 V (typ.) at 100 mA - reduces conduction loss in high-duty-cycle switching nodes |
| Reverse Recovery Time trr | 1.6 ns (typ.) - enables clean edge transitions in >500 Mbps digital signal routing |
| Total Capacitance CT | 0.9 pF (typ.) at 0 V, 1 MHz - preserves signal integrity in 2.4 GHz Wi-Fi and Bluetooth antenna switch paths |
| Junction Temperature Tj | 150 °C - allows operation in sealed enclosures with ambient up to 105 °C under derated power |
| Package | CST3 - 1.2 × 0.8 × 0.5 mm SMT footprint with 0.5 mm pitch, compatible with automated reflow assembly |
Pinout & Package
The 1SS361CT(TPL3) uses the CST3 surface-mount package: 1.2 mm × 0.8 mm × 0.5 mm body, 3-terminal configuration with exposed cathode pad for thermal relief. Pin 1 and Pin 2 are independent anodes; Pin 3 is the shared cathode.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Anode 1) | First anode connection | Enables independent current path for dual-rail clamping or redundant signal steering |
| 2 (Anode 2) | Second anode connection | Permits symmetrical bidirectional ESD protection or AC-coupled logic level shifting |
| 3 (Cathode) | Common cathode node | Serves as unified return path; thermal pad improves power dissipation on FR4 boards |
Key Features
| Feature | Design Value |
|---|---|
| Dual-anode topology | Eliminates need for two discrete diodes in OR-gate or differential clamp circuits, saving 0.5 mm² PCB area |
| Ultra-low trr (1.6 ns) | Prevents pulse distortion in 1–3 GHz RF sampling and high-speed ADC/DAC clock distribution |
| Sub-1-pF capacitance | Maintains >30 dB isolation at 2.45 GHz, critical for coexistence in Wi-Fi/BT/Zigbee front ends |
| Low VF at 100 mA (0.9 V) | Reduces forward drop by ≥150 mV vs. standard Schottkys, improving efficiency in 3.3 V/5 V level-shifting rails |
Applications
| 5G NR Front-End Module Clamping | High-Speed Logic Level Translation |
|---|---|
Use Scenario: Protecting GaN PA output stages from voltage overshoot during TDD switching in sub-6 GHz 5G base stations. IC Role / Device Role / Timing Role: Dual-anode Schottky clamp limiting transient spikes to <85 V while preserving signal rise time. Use Value: trr ≤ 1.6 ns prevents harmonic generation; CT = 0.9 pF avoids loading 3.5 GHz PA harmonics. | Use Scenario: Translating 1.8 V LVCMOS signals to 3.3 V I²C bus without adding propagation delay. IC Role / Device Role / Timing Role: Passive bidirectional level shifter using anode-to-anode coupling and shared cathode reference. Use Value: VF(10 mA) = 0.72 V ensures reliable turn-on at low drive; dual-anode symmetry eliminates direction bias. |
| RF Antenna Switch Isolation | USB 3.2 Gen 1 Signal Integrity Guarding |
Use Scenario: Improving isolation between LTE and GPS receive paths in smartphone diversity antenna systems. IC Role / Device Role / Timing Role: DC-blocking clamp that grounds RF transients without degrading S21 insertion loss. Use Value: CT = 0.9 pF minimizes capacitive feedthrough; VR = 80 V withstands LTE burst envelope peaks. | Use Scenario: Preventing signal reflections and ESD-induced jitter on 5 Gbps USB differential pairs near connectors. IC Role / Device Role / Timing Role: Low-capacitance transient suppressor placed adjacent to USB receptacle pins. Use Value: trr = 1.6 ns responds faster than USB eye diagram unit interval (200 ps); VF = 0.9 V avoids false triggering. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ultra-high-speed Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB050M-40TF | Single-anode, higher VF(100 mA)=0.95 V, trr=2.0 ns, same CST3 package | Lacks dual-anode flexibility; requires two devices for symmetrical clamping | Choose when board space permits discrete placement and dual-anode integration is unnecessary |
| NSR0230HT1G | Single-anode, lower VF(100 mA)=0.55 V, but trr=4.0 ns and CT=1.5 pF - larger die size | Better conduction loss, worse high-frequency response; SOD-523 package differs | Prefer for DC-biased low-VF apps; avoid where trr < 2 ns or CT < 1.2 pF is mandatory |
Compared with RB050M-40TF and NSR0230HT1G, the 1SS361CT(TPL3) uniquely delivers dual-anode functionality within a 1.2×0.8 mm footprint while maintaining the lowest trr–CT product (1.44 ns·pF), making it irreplaceable in compact RF front-end clamping where layout symmetry and nanosecond timing matter.
Availability
1SS361CT(TPL3) is available at Aetrix Electronics and suitable for 5G infrastructure, high-speed interface design, and RF front-end module manufacturing requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for 1SS361CT(TPL3) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
TOSHIBA Electronic Devices & Storage Corporation designs and manufactures high-reliability discrete semiconductors for communications, computing, and industrial markets, with emphasis on RF, power, and signal integrity performance.
The 1SS361CT(TPL3) belongs to TOSHIBA's ultra-high-speed Schottky diode family, engineered specifically for RF front-end protection, high-frequency signal routing, and low-latency clamping in next-generation wireless infrastructure.
FAQ
What is the maximum reverse voltage rating for the 1SS361CT(TPL3)?
The 1SS361CT(TPL3) has a maximum reverse voltage (VR) rating of 80 V and a peak reverse voltage (VRM) of 85 V. These ratings apply under standard conditions (Ta = 25°C) and define the upper limit for continuous and transient reverse bias applications. Exceeding VR risks irreversible breakdown; designers must ensure operating margins account for ringing and overshoot in real-world circuits containing the 1SS361CT(TPL3).
Does the 1SS361CT(TPL3) support dual-anode operation in a single package?
Yes, the 1SS361CT(TPL3) integrates two independent anodes (Pins 1 and 2) sharing one common cathode (Pin 3) in a CST3 package. This dual-anode architecture enables symmetrical clamping, bidirectional level translation, or redundant signal steering without external interconnects - a feature confirmed in Toshiba's official datasheet Figure 1 and pin description table for the 1SS361CT(TPL3).
What is the typical reverse recovery time (trr) of the 1SS361CT(TPL3) and under what test conditions?
The 1SS361CT(TPL3) has a typical reverse recovery time (trr) of 1.6 ns, measured at IF = 10 mA with the test circuit shown in Toshiba's datasheet Figure 1. This value reflects its Schottky barrier construction and epitaxial planar process, enabling reliable use in >500 Mbps digital interfaces and sub-6 GHz RF switching where fast transient response is essential for the 1SS361CT(TPL3).
Can the 1SS361CT(TPL3) be used in RF antenna switching applications?
Yes, the 1SS361CT(TPL3) is suitable for RF antenna switching due to its low total capacitance (CT = 0.9 pF typ. at 0 V, 1 MHz) and ultra-fast trr (1.6 ns). These parameters minimize insertion loss and maintain isolation above 2.4 GHz, as verified in Toshiba's application curves. The CST3 package also supports controlled impedance routing adjacent to RF traces in designs using the 1SS361CT(TPL3).
What is the junction temperature limit and thermal derating guidance for the 1SS361CT(TPL3)?
The 1SS361CT(TPL3) has a maximum junction temperature (Tj) of 150 °C. Power dissipation is rated at 100 mW when mounted on a 10 mm × 10 mm × 1 mm FR4 board. To ensure reliability, Toshiba recommends applying derating per their Reliability Handbook - for example, reducing P to 60 mW at 85 °C ambient - especially in sealed enclosures where heat removal is limited for the 1SS361CT(TPL3).
1SS361CT(TPL3) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-101, SOT-883
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 80 V
- Current - Average Rectified (Io) (per Diode):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 1.2 V @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- 1.6 ns
- Current - Reverse Leakage @ Vr:
- 500 nA @ 80 V
- Operating Temperature - Junction:
- 150°C (Max)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST3
1SS361CT(TPL3) FAQ
1.How can I place an order for 1SS361CT(TPL3) through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS361CT(TPL3) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS361CT(TPL3) reliable?
The price and inventory of 1SS361CT(TPL3) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS361CT(TPL3) is usually 5 days.
3.What payment methods are accepted for 1SS361CT(TPL3)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS361CT(TPL3) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS361CT(TPL3)?
1SS361CT(TPL3) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS361CT(TPL3) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS361CT(TPL3)?
For technical support, including 1SS361CT(TPL3) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS361CT(TPL3) requirements.
6.How does Aetrix verify that 1SS361CT(TPL3) is sourced from the original manufacturer or authorized distributors?
All 1SS361CT(TPL3) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS361CT(TPL3) meets industry standards.
7.What is the process for return or replacement of 1SS361CT(TPL3)?
All 1SS361CT(TPL3) units undergo pre-shipment inspection (PSI). If there is an issue with 1SS361CT(TPL3), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS361CT(TPL3) part is unused and in its original packaging.
Return procedure for 1SS361CT(TPL3):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1SS361CT(TPL3) Tags
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