Diodes Incorporated 1SS361LP3-7

Overview

1SS361LP3-7 from Diodes Incorporated is an ultra-small leadless surface-mount switching diode in a 0.6 × 0.3 mm DFN package, rated for 80 V peak repetitive reverse voltage, 300 mA forward surge current, and 1.7 ns typical reverse recovery time. It delivers low forward voltage (0.61 V at 1 mA), low capacitance (0.37 pF typ), and operates across –65°C to +150°C - used in high-density RF signal routing and portable power management circuits.

For engineers reviewing the 1SS361LP3-7 datasheet, 1SS361LP3-7 pinout, 1SS361LP3-7 application, or 1SS361LP3-7 equivalent, key selection criteria include its 0.3 mm profile, cathode-bar-marked X3-DFN0603-2 terminal layout, fast trr performance under 4 ns, and compatibility with automated high-speed placement on space-constrained PCBs.

Technical Context

This diode employs a planar silicon junction structure optimized for fast charge-carrier extraction, enabling sub-4 ns reverse recovery under 10 mA IF/IR conditions with 100 Ω load. Its low CT (≤3.0 pF) and minimal stored charge support high-frequency switching up to UHF bands.

The X3-DFN0603-2 package uses a copper leadframe with matte tin plating, rated for moisture sensitivity level 1 and UL 94V-0 flammability. Thermal resistance is 500°C/W on FR-4 with recommended pad layout, limiting continuous dissipation to 250 mW at 25°C ambient.

Key Specifications

Pinout & Package

Package: X3-DFN0603-2 - ultra-compact 0.6 mm × 0.3 mm × 0.3 mm leadless plastic package with exposed copper thermal pad (not electrically connected), matte tin-plated terminals, and cathode identification via molded bar on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar switching diode applications.

Compared with BAT54C-7-F and NSR0230HT1G, the 1SS361LP3-7 uniquely balances ultra-miniaturization, 80 V robustness, and sub-4 ns switching - making it optimal for space-constrained RF and mixed-signal subsystems requiring wide-voltage tolerance without sacrificing speed.

Availability

1SS361LP3-7 is available at Aetrix Electronics and suitable for RF antenna switching, USB Type-C port protection, and wearable sensor bias networks requiring stable component supply across extended production cycles.

Supply support for 1SS361LP3-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design and manufacturing operations across Asia and the Americas.

The 1SS361LP3-7 belongs to Diodes' ultra-miniature switching diode product line, engineered specifically for high-frequency signal routing and space-constrained portable electronics where size, speed, and reliability are co-prioritized.

FAQ

What is the cathode identification method on the 1SS361LP3-7?

The cathode is marked by a molded bar on the top surface of the X3-DFN0603-2 package, aligned with one short edge. This bar corresponds to the cathode terminal in the pinout diagram and must be oriented toward the PCB's designated cathode net during placement. AOI systems detect this feature for automated alignment verification.

Can the 1SS361LP3-7 be used in reflow soldering processes?

Yes - the device is qualified for lead-free reflow per J-STD-020, with moisture sensitivity level 1. It withstands peak temperatures up to 260°C for ≤60 seconds. Recommended profile follows IPC/JEDEC J-STD-020D, using Diodes' AP02001 pad layout to ensure void-free solder joints on the thermal pad.

How does the 1SS361LP3-7 perform under elevated temperature?

At +125°C ambient, forward voltage drops to ~0.52 V at 1 mA, while reverse leakage rises to ~0.8 µA at 30 V. Power dissipation must be derated linearly above 25°C per Figure 1 - at 100°C, maximum PD is 125 mW. Junction temperature must remain ≤150°C under all operating conditions.

Is the 1SS361LP3-7 suitable for automotive applications?

Yes - it is AEC-Q200 stress-tested and rated for TJ = –65°C to +150°C. Its halogen-free, lead-free construction and 80 V VRRM meet requirements for infotainment power sequencing and body-control module signal conditioning, though system-level qualification remains the customer's responsibility.