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Toshiba Semiconductor and Storage 1SS385FV,L3F
- Part No.:
- 1SS385FV,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- SOT-723
- Datasheet:
-
1SS385FV,L3F.pdf
- Description:
- DIODE SCHOTTKY 10V 100MA VESM
- Quantity:
- Payment:
- Shipping:
Inventory:5,452
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Product details
Overview
1SS385FV,L3F from TOSHIBA is a dual-anode silicon epitaxial Schottky barrier diode optimized for high-speed switching in compact DC-DC converters and signal routing circuits, featuring VF = 0.23 V (typ.) at IF = 5 mA, VR = 10 V, IFM = 200 mA, CT = 20 pF at 1 MHz, and operation up to 100°C ambient.
For engineers reviewing the 1SS385FV,L3F datasheet, 1SS385FV,L3F pinout, 1SS385FV,L3F application, or 1SS385FV,L3F equivalent, key selection criteria include low forward voltage for efficiency-critical bias networks, ultra-small VESM package footprint, dual-anode configuration for shared-cathode logic-level switching, and verified 20 μA max reverse leakage at 10 V.
Technical Context
This Schottky diode uses epitaxial construction to achieve fast recovery with minimal stored charge, enabling sub-10 ns switching in low-voltage digital interface clamping and power rail OR-ing. Its dual-anode topology supports independent anode control while sharing a common cathode terminal, reducing component count in dual-input protection schemes.
The device operates within −40°C to +100°C ambient range and delivers stable VF performance across 1–100 mA forward current, with thermal derating defined for FR4 mounting (25.4 mm × 25.4 mm × 1.6 mm). Junction temperature must not exceed 125°C under continuous operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Forward Voltage (VF) | 0.23 V typ. @ IF = 5 mA - enables >95% efficiency in 3.3 V/5 V rail clamping and biasing |
| Peak Reverse Voltage (VRM) | 15 V - supports transient suppression in low-voltage logic and USB-powered systems |
| Max Forward Current (IFM) | 200 mA - sufficient for LED driver bias, level-shifter pull-up, and sensor interface loads |
| Reverse Leakage (IR) | 20 μA max @ VR = 10 V - ensures low standby power in always-on battery-backed circuits |
| Junction Temperature (Tj) | 125°C - allows operation in thermally constrained portable and automotive cabin modules |
| Total Capacitance (CT) | 20 pF @ VR = 0 V, f = 1 MHz - preserves signal integrity in <100 MHz digital line clamping |
Pinout & Package
Package: VESM (Ultra-Small Surface-Mount), 1.2 mm × 0.8 mm × 0.4 mm body, 0.5 mm pitch, tape-and-reel (L3F designation).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Anode 1 | Independent Schottky anode for discrete path control or dual-input OR function |
| 2 | Anode 2 | Second independent anode - enables shared-cathode dual-source selection without external diodes |
| 3 | Cathode | Common cathode node - simplifies PCB layout for bidirectional clamping or rail-sensing applications |
Key Features
| Feature | Design Value |
|---|---|
| Dual-anode Schottky structure | Reduces component count by 50% vs. two discrete SOD-323 diodes in shared-cathode configurations |
| Ultra-low VF at low current | 0.18 V typ. @ IF = 1 mA - minimizes voltage drop in precision reference and sensor bias networks |
| VESM package footprint | 1.2 mm × 0.8 mm - fits 0402-class board space while supporting 200 mA peak current |
| Low junction capacitance | 20 pF - maintains rise/fall time integrity in 10–50 MHz clock and data line clamping |
Applications
| USB 2.0 Data Line Protection | Low-Voltage Logic-Level Shifting |
|---|---|
Use Scenario: Clamping ESD transients on D+ and D− lines of USB 2.0 peripherals operating from 3.3 V supply. IC Role / Device Role / Timing Role: Dual-anode Schottky clamp diode providing bidirectional low-capacitance path to VBUS and GND. Use Value: 20 pF capacitance avoids signal distortion; 0.23 V VF ensures minimal impact on eye diagram margin at 480 Mbps. | Use Scenario: Level translation between 1.8 V I²C master and 3.3 V slave in portable audio SoC designs. IC Role / Device Role / Timing Role: Passive bidirectional level shifter using dual-anode configuration with pull-up resistors on both sides. Use Value: 0.18 V VF at 1 mA enables reliable turn-on below 2.0 V, preserving noise margin in mixed-voltage I²C buses. |
| DC-DC Converter Synchronous Rectification | Automotive Cabin Sensor Bias Network |
Use Scenario: Secondary-side synchronous rectifier in 5 V → 3.3 V buck converter for infotainment power rails. IC Role / Device Role / Timing Role: Low-loss freewheeling path during high-side MOSFET off-time, sharing cathode with controller ground. Use Value: 0.35 V VF @ 100 mA reduces conduction loss by 40% vs. standard PN diode, improving light-load efficiency. | Use Scenario: Precision bias current source for NTC thermistors and Hall-effect sensors in HVAC control modules. IC Role / Device Role / Timing Role: Low-drift forward voltage reference element in constant-current mirror circuitry. Use Value: Stable VF over −40°C to +100°C enables ±0.5% bias accuracy without active compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB050M-30 | Single-anode SOD-523, VF = 0.32 V @ 10 mA, VR = 30 V, CT = 30 pF | Lacks dual-anode topology; higher VF and capacitance limit use in high-speed or dual-path designs | Select when higher VR rating is required and dual-anode functionality is unnecessary |
| NSR0230HT1G | Single-anode SOD-323, VF = 0.27 V @ 10 mA, VR = 30 V, CT = 25 pF, 200 mA IFM | No shared-cathode dual-anode capability; larger footprint than VESM; higher VF degrades low-current efficiency | Choose for legacy SOD-323 assembly compatibility where dual-anode integration is not needed |
Compared with RB050M-30 and NSR0230HT1G, the 1SS385FV,L3F uniquely provides dual-anode integration in a 1.2 mm × 0.8 mm footprint with the lowest VF at microampere currents-critical for multi-source biasing and compact USB/Ethernet clamping where board space and low-voltage headroom are constrained.
Availability
1SS385FV,L3F is available at Aetrix Electronics and suitable for USB interface protection, low-voltage level shifting, DC-DC synchronous rectification, and automotive cabin sensor biasing requiring stable component supply and long-term production continuity.
Supply support for 1SS385FV,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs high-reliability discrete semiconductors for industrial, consumer, and automotive applications, with emphasis on miniaturization and energy efficiency.
The 1SS385FV,L3F belongs to Toshiba's VESM-series Schottky diodes, engineered specifically for space-constrained high-speed switching in portable electronics and automotive subsystems where dual-anode integration improves functional density.
FAQ
What is the maximum continuous forward current rating for the 1SS385FV,L3F?
The 1SS385FV,L3F has an average forward current (IO) rating of 100 mA under standard FR4 board conditions. This value assumes proper thermal management and accounts for the device's 150 mW power dissipation limit. Exceeding 100 mA continuously may cause junction temperature to exceed 125°C, risking reliability degradation. The 1SS385FV,L3F is rated for 200 mA peak forward current (IFM), but only for short-duration pulses.
Does the 1SS385FV,L3F support bidirectional signal clamping?
Yes, the 1SS385FV,L3F supports bidirectional clamping via its dual-anode configuration: Anode 1 and Anode 2 connect independently to signal lines, while the shared Cathode (Pin 3) connects to either VCC or GND depending on clamping polarity. When used with appropriate pull-up/pull-down resistors, the 1SS385FV,L3F enables ESD-safe clamping on differential pairs like USB D+/D− without adding discrete components.
What is the thermal derating behavior of the 1SS385FV,L3F above 25°C ambient?
The 1SS385FV,L3F exhibits linear thermal derating: its power dissipation drops from 150 mW at 25°C to zero at 125°C junction temperature. On a standard FR4 board (25.4 mm × 25.4 mm × 1.6 mm), this translates to approximately 1.2 mW/°C reduction above 25°C ambient. Engineers must calculate actual junction temperature using θJA ≈ 833°C/W and ensure the 1SS385FV,L3F remains within −40°C to +100°C operating ambient range.
Can the 1SS385FV,L3F replace two separate SOD-323 Schottky diodes in a design?
Yes-the 1SS385FV,L3F integrates two Schottky anodes into a single VESM package, enabling direct replacement of two discrete SOD-323 diodes in shared-cathode topologies such as OR-ing, dual-rail clamping, or logic-level translation. However, layout must accommodate the 3-pin VESM footprint (1.2 mm × 0.8 mm) and verify that the shared cathode connection meets system grounding requirements before substituting the 1SS385FV,L3F.
Is the 1SS385FV,L3F RoHS compliant and lead-free?
Yes, the 1SS385FV,L3F is RoHS compliant and lead-free per EU Directive 2011/65/EU. Toshiba confirms compliance in its official product documentation and environmental reports. The "L3F" suffix denotes tape-and-reel packaging compatible with lead-free reflow profiles (J-STD-020, peak 260°C). No exemptions apply, and the 1SS385FV,L3F contains no intentionally added lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE.
1SS385FV,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOT-723
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 10 V
- Current - Average Rectified (Io):
- 100mA
- Voltage - Forward (Vf) (Max) @ If:
- 500 mV @ 100 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 20 µA @ 10 V
- Capacitance @ Vr, F:
- 20pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- VESM
- Operating Temperature - Junction:
- 125°C (Max)
1SS385FV,L3F FAQ
1.How can I place an order for 1SS385FV,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS385FV,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS385FV,L3F reliable?
The price and inventory of 1SS385FV,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS385FV,L3F is usually 5 days.
3.What payment methods are accepted for 1SS385FV,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS385FV,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS385FV,L3F?
1SS385FV,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS385FV,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS385FV,L3F?
For technical support, including 1SS385FV,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS385FV,L3F requirements.
6.How does Aetrix verify that 1SS385FV,L3F is sourced from the original manufacturer or authorized distributors?
All 1SS385FV,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS385FV,L3F meets industry standards.
7.What is the process for return or replacement of 1SS385FV,L3F?
All 1SS385FV,L3F units undergo pre-shipment inspection (PSI). If there is an issue with 1SS385FV,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS385FV,L3F part is unused and in its original packaging.
Return procedure for 1SS385FV,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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