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Toshiba Semiconductor and Storage 1SS413CT,L3F
- Part No.:
- 1SS413CT,L3F
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Single Diodes
- Package:
- SOD-882
- Datasheet:
-
1SS413CT,L3F.pdf
- Description:
- DIODE SCHOTTKY 20V 50MA SOD882
- Quantity:
- Payment:
- Shipping:
Inventory:38,680
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Product details
Overview
1SS413CT,L3F from Toshiba is a silicon epitaxial Schottky barrier diode optimized for high-speed switching applications, featuring VF(3) = 0.50 V (typ.) at IF = 50 mA, IR = 0.5 µA (max) at VR = 20 V, and Ct = 3.9 pF (typ.) at VR = 0 V / f = 1 MHz. It is commonly used in DC-DC converter freewheeling paths and signal clamping circuits where low forward voltage and fast recovery are critical.
For engineers reviewing the 1SS413CT,L3F datasheet, 1SS413CT,L3F pinout, 1SS413CT,L3F application, or 1SS413CT,L3F equivalent, key selection criteria include its CST2 package footprint, 25 V peak reverse voltage rating, 50 mA average rectified current capability, thermal derating behavior above 25 °C, and suitability for low-power, high-frequency switching in portable electronics and power management ICs.
Technical Context
This Schottky diode leverages a silicon epitaxial structure to achieve low forward voltage drop and minimal reverse recovery time-critical for efficiency in high-frequency switching regulators. Its low total capacitance (3.9 pF typ.) supports clean signal integrity in RF detection and high-speed logic interface clamping.
The device operates within a junction temperature range of –55 °C to +125 °C and requires thermal design consideration due to higher reverse leakage versus PN-junction diodes. Absolute maximum ratings assume mounting on a 20 mm × 20 mm glass epoxy PCB with 4 mm × 4 mm pads (Note 1).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Reverse Voltage | 25 V - sets maximum blocking capability in flyback or clamp configurations |
| Forward Voltage (IF = 50 mA) | 0.50 V (typ.) - reduces conduction loss in low-voltage power rails |
| Reverse Current (VR = 20 V) | 0.5 µA (max) - limits standby power loss in battery-powered systems |
| Total Capacitance (VR = 0 V, 1 MHz) | 3.9 pF (typ.) - enables use in >100 MHz signal path clamping without excessive loading |
| Average Rectified Current | 50 mA - defines continuous DC current handling in small-signal rectification |
| Power Dissipation | 100 mW - constrains thermal design margin on standard FR-4 PCBs |
Pinout & Package
The 1SS413CT,L3F is housed in the CST2 surface-mount package (Toshiba designation: 1-1P1S), measuring 1.25 mm × 0.85 mm × 0.55 mm with a typical weight of 0.7 mg. It features a dual-terminal configuration with cathode and anode exposed on opposite ends for automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Connected to higher-potential node in reverse-biased operation; marked side on top surface |
| 2 | Anode | Connected to lower-potential node; serves as current entry point during forward conduction |
Key Features
| Feature | Design Value |
|---|---|
| Low forward voltage | VF(3) = 0.50 V (typ.) at 50 mA - improves efficiency in 3.3 V and lower supply rail clamping |
| Low reverse leakage | IR ≤ 0.5 µA at 20 V - minimizes quiescent current in always-on sensor interfaces |
| Small junction capacitance | Ct = 3.9 pF (typ.) - preserves bandwidth in RF detector and high-speed logic input protection |
| High-speed switching | No specified reverse recovery time (trr), but Schottky architecture ensures sub-nanosecond turn-off - suitable for >10 MHz switching |
Applications
| DC-DC Converter Freewheeling | Signal-Level Clamping |
|---|---|
Use Scenario: Used as a synchronous rectifier or freewheeling diode in 1–3 W buck converters powering microcontrollers or sensors. IC Role / Device Role: Provides low-loss current path during MOSFET off-time to minimize voltage overshoot and improve conversion efficiency. Use Value: 0.50 V VF reduces conduction loss by ~30% vs. standard silicon diodes, extending battery life in portable designs. | Use Scenario: Placed across analog input pins of ADCs or op-amps to limit overvoltage transients. IC Role / Device Role: Acts as a bidirectional ESD/overvoltage clamp, shunting excess energy to ground or supply rail. Use Value: 3.9 pF capacitance avoids signal distortion up to 100 MHz, preserving measurement accuracy in precision data acquisition. |
| RF Detector Circuit | Logic-Level Translation Interface |
Use Scenario: Integrated into envelope detectors for low-power ISM-band receivers (e.g., 433 MHz ASK demodulation). IC Role / Device Role: Rectifies RF carrier signal to generate baseband envelope voltage for digital decoding. Use Value: Low VF and negligible trr enable accurate detection of weak signals (< –20 dBm) without waveform rounding. | Use Scenario: Level-shifting I²C or UART lines between 1.8 V and 3.3 V domains in mixed-voltage SoC systems. IC Role / Device Role: Provides passive bidirectional voltage translation using forward conduction threshold. Use Value: 0.38 V VF(2) at 5 mA allows reliable 1.8 V → 3.3 V translation with <100 ns propagation delay. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| RB520S-30T1G | Higher VRM = 30 V; VF(50 mA) = 0.37 V (typ.); same CST2 package | Better suited for 24 V input systems requiring higher reverse margin | Select when system VR exceeds 25 V or lower VF is prioritized over cost |
| NSR0230HT1G | Lower IR = 0.1 µA (max) at 20 V; VF(50 mA) = 0.45 V (typ.); SOD-523 package (smaller footprint) | Preferred for ultra-low-leakage, space-constrained wearables | Choose when board area is limited and leakage-critical (e.g., medical sensor bias networks) |
Compared with RB520S-30T1G and NSR0230HT1G, the 1SS413CT,L3F offers balanced VF/IR trade-off in the standard CST2 footprint, making it optimal for cost-sensitive, medium-frequency power management where 25 V VRM suffices and 0.5 µA IR is acceptable.
Availability
1SS413CT,L3F is available at Aetrix Electronics and suitable for DC-DC converter freewheeling, signal-level clamping, and RF detector circuits requiring stable component supply, consistent parametric performance, and long-term industrial availability.
Supply support for 1SS413CT,L3F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and miniaturization for industrial and consumer applications.
The 1SS413CT,L3F belongs to Toshiba's CST2-packaged Schottky diode product line, engineered specifically for high-speed, low-power signal conditioning and power conversion in space-constrained portable and IoT electronics.
FAQ
What is the maximum junction temperature for the 1SS413CT,L3F?
The 1SS413CT,L3F has a maximum junction temperature (Tj) rating of +125 °C. This value must be maintained under actual operating conditions by ensuring adequate PCB copper area, ambient temperature control, and power dissipation limits. Exceeding this temperature accelerates degradation and increases reverse leakage, especially given the Schottky structure's inherent thermal sensitivity.
Does the 1SS413CT,L3F have a specified reverse recovery time (trr)?
No, the 1SS413CT,L3F datasheet does not specify a reverse recovery time (trr). As a Schottky barrier diode, it relies on majority-carrier conduction and exhibits no minority-carrier storage delay. Its effective switching speed is governed by junction capacitance (3.9 pF typ.) and series resistance-not trr-making it inherently faster than PN-junction diodes in high-frequency applications.
What is the marking code for the 1SS413CT,L3F on the device body?
The 1SS413CT,L3F is marked with "L3F" on the top surface of the CST2 package. This marking aligns with Toshiba's standard coding for tape-and-reel packaging and lot traceability. The cathode is indicated by a band or notch on the same side as the marking, consistent with industry-standard polarity identification for two-terminal SMD diodes.
Can the 1SS413CT,L3F be used in automotive applications?
The 1SS413CT,L3F is not qualified to AEC-Q101 and is not recommended for automotive applications. Its specified operating temperature range (–55 °C to +125 °C) meets ambient requirements, but Toshiba explicitly excludes use in automotive systems per its "Unintended Use" restrictions. For automotive-grade alternatives, consult Toshiba's AEC-Q101-certified Schottky diode portfolio.
How does the 1SS413CT,L3F compare to standard silicon PN diodes in clamping applications?
The 1SS413CT,L3F provides significantly lower forward voltage (0.50 V typ. at 50 mA) and near-zero reverse recovery charge versus standard PN diodes (e.g., 1N4148: VF ≈ 0.72 V, trr ≈ 4 ns). This results in reduced power loss and cleaner transient suppression in high-frequency clamping-especially critical in 10–100 MHz signal paths where PN diode capacitance and recovery artifacts degrade performance.
1SS413CT,L3F Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SOD-882
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 20 V
- Current - Average Rectified (Io):
- 50mA
- Voltage - Forward (Vf) (Max) @ If:
- 550 mV @ 50 mA
- Speed:
- Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 500 nA @ 20 V
- Capacitance @ Vr, F:
- 3.9pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- CST2
- Operating Temperature - Junction:
- -55°C ~ 125°C
1SS413CT,L3F FAQ
1.How can I place an order for 1SS413CT,L3F through Aetrix?
Please submit a Request for Quotation (RFQ) for 1SS413CT,L3F on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 1SS413CT,L3F reliable?
The price and inventory of 1SS413CT,L3F are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 1SS413CT,L3F is usually 5 days.
3.What payment methods are accepted for 1SS413CT,L3F?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 1SS413CT,L3F transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 1SS413CT,L3F?
1SS413CT,L3F orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 1SS413CT,L3F order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 1SS413CT,L3F?
For technical support, including 1SS413CT,L3F datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 1SS413CT,L3F requirements.
6.How does Aetrix verify that 1SS413CT,L3F is sourced from the original manufacturer or authorized distributors?
All 1SS413CT,L3F products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 1SS413CT,L3F meets industry standards.
7.What is the process for return or replacement of 1SS413CT,L3F?
All 1SS413CT,L3F units undergo pre-shipment inspection (PSI). If there is an issue with 1SS413CT,L3F, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 1SS413CT,L3F part is unused and in its original packaging.
Return procedure for 1SS413CT,L3F:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
1SS413CT,L3F Tags
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BAV21W-7-F
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