Vishay General Semiconductor - Diodes Division 201CNQ040
- Part No.:
- 201CNQ040
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- Diode Arrays
- Package:
- TO-244AB
- Datasheet:
-
201CNQ040.pdf
- Description:
- DIODE MOD SCHOT 40V 200A TO244AB
- Quantity:
- Payment:

- Shipping:

Inventory:4,413
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Product details
Overview
201CNQ040 from Infineon Technologies is a center-tap Schottky rectifier module rated for 200 A average forward current, 40 V maximum DC reverse voltage, and 175 °C junction temperature operation; it features low forward voltage drop (0.58 V @ 100 A, TJ = 125 °C), high surge capability (16,000 A peak @ 5 µs sine), and TO-244AB package with common cathode configuration-designed for high-current switching power supplies and welding equipment.
For engineers reviewing the 201CNQ040 datasheet, 201CNQ040 pinout, 201CNQ040 application, or 201CNQ040 equivalent, key selection criteria include thermal resistance (0.20 °C/W junction-to-case per package), reverse leakage (90 mA @ 125 °C), ruggedness-enhancing guard ring, and compatibility with high-frequency, high-temperature industrial systems requiring stable conduction and minimal switching loss.
Technical Context
This device implements a dual-anode, single-common-cathode Schottky architecture enabling independent leg conduction with shared thermal path. Its proprietary barrier technology suppresses reverse leakage at elevated temperatures while maintaining low VF across wide current range (0.58–0.71 V @ 100–200 A).
Thermal design is enabled by low RthJC (0.20 °C/W per package) and RthCS (0.10 °C/W to heatsink), supporting continuous 200 A operation at TC = 138 °C under 50% duty cycle rectangular waveform. dv/dt rating of 10,000 V/µs ensures robustness against fast transients in inductive switching circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| IF(AV) | 200 A average forward current at TC = 138 °C, 50% duty cycle - enables high-power DC output without forced air cooling |
| VRRM | 40 V max DC reverse voltage - defines safe blocking capability in 24–36 V system rails |
| VF @ 100 A | 0.58 V at TJ = 125 °C - reduces conduction loss and heat generation in high-current legs |
| IFSM | 16,000 A non-repetitive surge (5 µs sine) - withstands welder arc initiation and power-up inrush |
| TJ Range | −55 to +175 °C - supports operation in engine compartments, industrial enclosures, and uncooled converters |
| RthJC (pkg) | 0.20 °C/W junction-to-case - allows efficient heat transfer to baseplate-mounted heatsink |
| IRM @ 125 °C | 90 mA reverse leakage per leg - minimized thermal runaway risk in parallel configurations |
Pinout & Package
Package: TO-244AB (Modified JEDEC), metal-base insulated module with center-tap configuration. Dimensions: 92.71 × 40.26 × 23.55 mm (3.650 × 1.585 × 0.927 in), weight 79 g. Mounting via 1/4-20 slotted hex base and terminal lugs.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| ANODE 1 | First Schottky anode | Accepts input from first half-bridge or transformer secondary leg |
| ANODE 2 | Second Schottky anode | Accepts input from second half-bridge or complementary transformer winding |
| COMMON CATHODE | Shared cathode node | Provides single low-impedance return path for both legs - simplifies PCB layout and thermal management |
| BASE | Electrically isolated mounting surface | Provides mechanical attachment and thermal conduction path to heatsink; electrically isolated per UL/IEC standards |
Key Features
| Feature | Design Value |
|---|---|
| 175 °C TJ operation | Enables reliable use in sealed industrial enclosures without active cooling or derating |
| Guard ring structure | Improves edge termination ruggedness and long-term reliability under repetitive avalanche stress |
| High-purity epoxy encapsulation | Provides enhanced moisture resistance (IPC-J-STD-020 MSL 1) and mechanical stability during thermal cycling |
| Low series inductance | 7.0 nH per leg - minimizes voltage overshoot during fast turn-off in high-dI/dt applications |
| Center-tap topology | Reduces component count in full-wave rectification vs. discrete diode bridges; improves thermal symmetry |
Applications
| Welding Power Supply | Industrial DC-DC Converter |
|---|---|
Use Scenario: High-current, low-duty-cycle output stage in inverter-based arc welders handling >10 kA short-circuit currents. IC Role / Device Role / Timing Role: Center-tap Schottky rectifier providing full-wave AC-to-DC conversion on secondary side of high-frequency transformer. Use Value: Low VF and high IFSM enable compact transformer design and rapid arc re-ignition without thermal shutdown. | Use Scenario: Output rectification in 48 V to 12 V isolated DC-DC modules for factory automation controllers. IC Role / Device Role / Timing Role: Dual-leg synchronous rectification replacement delivering high efficiency at 200 A continuous load. Use Value: 0.20 °C/W RthJC (pkg) allows passive heatsinking and eliminates need for fan-cooled designs. |
| Reverse Battery Protection | Uninterruptible Power System (UPS) |
Use Scenario: Bidirectional protection circuit in 24 V vehicle-mounted electronics preventing damage during jump-start or polarity reversal. IC Role / Device Role / Timing Role: Common-cathode dual-anode configuration used as OR-ing diode with automatic failover between battery banks. Use Value: Low IRM (90 mA @ 125 °C) prevents excessive standby power loss while maintaining blocking integrity at elevated ambient. | Use Scenario: Rectification stage in online UPS inverters converting battery DC to clean AC output during grid failure. IC Role / Device Role / Timing Role: High-current freewheeling and commutation path during PWM-controlled inverter switching transitions. Use Value: 10,000 V/µs dv/dt rating ensures immunity to fast transients generated by IGBT gate drive coupling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| VSKT200-04 | Same 40 V VRRM, 200 A IF(AV), but TO-264 package; higher RthJC (0.35 °C/W per leg) | Less effective thermal spreading in high-density layouts; requires larger heatsink footprint | Prefer when legacy TO-264 footprint compatibility is required over thermal optimization |
| STPS20045CT | 45 V VRRM, same 200 A rating, but lower TJ max (150 °C); VF = 0.65 V @ 100 A | Not suitable for 175 °C ambient environments; limited surge margin (12,000 A IFSM) | Select only where 45 V blocking margin is critical and thermal environment remains ≤150 °C |
Compared with VSKT200-04 and STPS20045CT, the 201CNQ040 delivers superior thermal performance (0.20 °C/W pkg RthJC), extended temperature capability (175 °C), and higher surge tolerance-making it optimal for space-constrained, high-reliability industrial power stages where thermal headroom and transient robustness are decisive.
Availability
201CNQ040 is available at Aetrix Electronics and suitable for welding equipment, industrial DC-DC converters, and uninterruptible power systems requiring stable component supply, long-lifecycle support, and traceable sourcing.
Supply support for 201CNQ040 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy markets.
The 201CNQ... series was developed for high-current, high-temperature rectification in industrial power conversion-emphasizing ruggedness, low conduction loss, and long-term reliability under thermal and electrical stress.
FAQ
What is the maximum allowable case temperature for continuous operation of the 201CNQ040?
The 201CNQ040 supports continuous 200 A average forward current at a case temperature (TC) of 138 °C under 50% duty cycle rectangular waveform conditions. Exceeding this temperature requires derating per Fig. 5 in the datasheet. The device's 175 °C maximum junction temperature and 0.20 °C/W junction-to-case thermal resistance define its thermal envelope. Proper heatsink interface (greased, smooth surface) is essential to maintain TC within limits during full-load operation of the 201CNQ040.
Does the 201CNQ040 have a guard ring, and what benefit does it provide?
Yes, the 201CNQ040 incorporates a guard ring structure in its die design. This feature enhances edge termination ruggedness, improving resistance to surface flashover and long-term reliability under repetitive avalanche stress-particularly important in inductive switching applications like welding and motor drives. The guard ring contributes directly to the device's ability to sustain 135 mJ non-repetitive avalanche energy per leg and supports robust operation in harsh industrial environments where the 201CNQ040 is deployed.
Can the 201CNQ040 be used in parallel configurations, and what limits that use?
Parallel operation of the 201CNQ040 is feasible but requires careful attention to thermal and electrical balancing. Its low and matched forward voltage (0.58 V @ 100 A, TJ = 125 °C) supports current sharing, yet reverse leakage divergence at high temperature (90 mA @ 125 °C per leg) may cause imbalance. To ensure stability, use matched devices, symmetrical PCB layout, and shared heatsinking. Derating and thermal monitoring are recommended-especially since the 201CNQ040's 175 °C TJ rating enables tighter thermal margins than alternatives.
What is the significance of the TO-244AB package designation for the 201CNQ040?
TO-244AB is a Modified JEDEC outline specifying a metal-base, insulated power module package with standardized mechanical dimensions (92.71 × 40.26 × 23.55 mm), 1/4-20 slotted hex base, and dual-terminal lug configuration. It provides low thermal resistance (0.20 °C/W junction-to-case per package), electrical isolation of the base, and high mechanical robustness-critical for high-vibration environments like welding gear and industrial machinery where the 201CNQ040 is commonly applied.
How does the 201CNQ040 compare to standard silicon rectifiers in high-frequency applications?
The 201CNQ040 uses Schottky barrier technology, eliminating minority-carrier storage delay and enabling true zero-recovery behavior-unlike PN-junction silicon rectifiers. This results in negligible reverse recovery charge (Qrr ≈ 0), reduced EMI, and higher efficiency above 20 kHz. With 7.0 nH typical series inductance and 10,000 V/µs dv/dt rating, the 201CNQ040 maintains stable operation in high-frequency switch-mode power supplies where conventional rectifiers would suffer switching losses and thermal runaway. That makes the 201CNQ040 especially advantageous in modern high-density, high-efficiency power systems.
201CNQ040 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Series:
- -
- Package/Case:
- TO-244AB
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Diode Configuration:
- 1 Pair Common Cathode
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io) (per Diode):
- 200A
- Voltage - Forward (Vf) (Max) @ If:
- 810 mV @ 200 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 10 mA @ 40 V
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- TO-244AB
201CNQ040 FAQ
1.How can I place an order for 201CNQ040 through Aetrix?
Please submit a Request for Quotation (RFQ) for 201CNQ040 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 201CNQ040 reliable?
The price and inventory of 201CNQ040 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 201CNQ040 is usually 5 days.
3.What payment methods are accepted for 201CNQ040?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 201CNQ040 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 201CNQ040?
201CNQ040 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 201CNQ040 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 201CNQ040?
For technical support, including 201CNQ040 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 201CNQ040 requirements.
6.How does Aetrix verify that 201CNQ040 is sourced from the original manufacturer or authorized distributors?
All 201CNQ040 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 201CNQ040 meets industry standards.
7.What is the process for return or replacement of 201CNQ040?
All 201CNQ040 units undergo pre-shipment inspection (PSI). If there is an issue with 201CNQ040, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 201CNQ040 part is unused and in its original packaging.
Return procedure for 201CNQ040:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
201CNQ040 Tags

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BAV99-7-F
Diodes Incorporated

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BAT54C-7-F
Diodes Incorporated

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BAV99,215
Nexperia USA Inc.

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onsemi

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BAV70LT1G
onsemi

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BAT54S-7-F
Diodes Incorporated

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BAV99LT1G
onsemi

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BAT54S,215
Nexperia USA Inc.

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BAS40-04LT1G
onsemi

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MMBD1503-TP
Micro Commercial Co

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BAV99WT1G
onsemi
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