Infineon Technologies 2EDF7275FXUMA1
- Part No.:
- 2EDF7275FXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 16-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
2EDF7275FXUMA1.pdf
- Description:
- IC GATE DRVR HALF-BRIDG DSO16-11
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
2EDF7275FXUMA1 from Infineon Technologies is a dual-channel functional-isolated MOSFET gate driver IC with 4 A source / 8 A sink output current, 37 ns typical propagation delay, ±3 ns channel-to-channel mismatch, and 150 V/ns CMTI. It uses coreless transformer isolation in a narrow-body DSO-16 package and targets high-frequency half-bridge switching in industrial SMPS and EV charging systems.
For engineers reviewing the 2EDF7275FXUMA1 datasheet, 2EDF7275FXUMA1 pinout, 2EDF7275FXUMA1 application, or 2EDF7275FXUMA1 equivalent, key selection criteria include functional isolation rating (1.5 kVDC), output-side UVLO threshold (4 V), PWM timing accuracy over temperature, and compatibility with CoolMOS™/CoolSIC™ power stages in space-constrained designs.
Technical Context
This IC implements two independent galvanically isolated gate drive channels using coreless transformer (CT) technology, enabling operation in high dv/dt environments without signal degradation. Its input logic accepts CMOS/TTL signals referenced to GNDI, while outputs drive high-side and low-side MOSFETs with separate VDDA/VDDA and VDDB/GNDB supplies.
The device integrates safety features including input-side UVLO lockout below 3 V, output-side UVLO at 4 V, and automatic safety self-lockdown of both outputs during input undervoltage. Propagation delay variance is tightly controlled at +7/–6 ns across temperature and process variation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Isolation Type | Functional isolation: 1.5 kVDC production test for 10 ms - meets basic system-level insulation requirements without reinforced certification. |
| Output Drive Strength | 4 A source / 8 A sink per channel - sufficient to rapidly charge/discharge gate capacitance of medium-power CoolMOS™ and OptiMOS™ devices up to 100 kHz switching. |
| Propagation Delay | Typ. 37 ns with ±3 ns channel-to-channel mismatch - enables precise dead-time control in synchronous rectification and LLC resonant converters. |
| CMTI | >150 V/ns - ensures reliable operation in high-noise motor drive and fast-switching SMPS where ground bounce exceeds 100 V/ns. |
| UVLO Threshold (Output) | 4 V on VDDA/VDDA and VDDB - prevents partial turn-on of power MOSFETs during brown-out conditions, avoiding shoot-through risk. |
| Operating Temperature | –40°C to +150°C junction - supports placement near power stages in enclosed industrial enclosures without derating. |
| Package | Narrow-body DSO-16 (10 mm × 6 mm) - enables compact PCB layout in brick converters and server PSU modules with strict height constraints. |
Pinout & Package
2EDF7275FXUMA1 is housed in a RoHS-compliant narrow-body PG-DSO-16-11 package (10 mm × 6 mm, 1.27 mm pitch), optimized for thermal performance and automated assembly in high-volume industrial power supplies.
| Pin | Circuit Role | Design Meaning |
|---|---|---|
| 1 (INA) | Channel A input | CMOS/TTL logic input with internal pull-down; drives high-side MOSFET when paired with bootstrapped VDDA supply. |
| 2 (INB) | Channel B input | CMOS/TTL logic input with internal pull-down; used for low-side gate control in half-bridge configurations. |
| 3 (VDDI) | Input-side supply | 3.3 V nominal supply (SLDO enabled); supports controller co-location without external LDO if VDDI ≥ 3.5 V. |
| 4 (GNDI) | Input ground reference | Common return for all input-side signals; must be separated from power ground to maintain isolation integrity. |
| 5 (DISABLE) | Global shutdown input | Active-high logic disables both outputs simultaneously - critical for fault handling in UPS and battery storage systems. |
| 8 (SLDON) | SLDO enable control | Pulled up internally; connect to GNDI to activate SLDO for >3.5 V VDDI operation - simplifies auxiliary supply design. |
| 9 (VDDA) | Channel A output supply | 4.5–20 V isolated supply for high-side driver; typically generated via bootstrap diode/Dboot in half-bridge topologies. |
| 10 (OUTA) | Channel A output | High-current gate drive output (4 A/8 A); directly connects to gate of high-side MOSFET with external Rg1 resistor. |
| 11 (GNDA) | Channel A output ground | Return path for OUTA; tied to source of high-side MOSFET - forms local gate loop to minimize EMI. |
| 13 (VDDB) | Channel B output supply | 4.5–20 V isolated supply for low-side driver; commonly derived from dedicated 12 V rail in telecom SMPS. |
| 14 (OUTB) | Channel B output | High-current gate drive output (4 A/8 A); drives gate of low-side MOSFET with external Rg2 resistor. |
| 15 (GNDB) | Channel B output ground | Return path for OUTB; connected to power ground (PGND) - completes low-side gate loop with minimal inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Coreless transformer isolation | Enables 10 MHz PWM capability without optocoupler aging or speed limitations - ideal for digital control loops in GaN-based converters. |
| Integrated 18 ns input noise filter | Rejects sub-55 ns transients on INA/INB inputs - eliminates false triggering in noisy industrial environments without external RC filtering. |
| Safety self-lockdown on input UVLO | Forces both outputs low when VDDI drops below 3 V - prevents undefined gate states during controller reset or brown-out events. |
| 5 A peak reverse current capability | Handles Miller current reversal during fast dV/dt transitions - avoids latch-up and ensures robust turn-off of SiC MOSFETs in hard-switched PFC stages. |
| JEDEC-qualified for industrial use | Validated for continuous operation at TJ = 150°C - supports deployment in unventilated server PSUs and EV charging cabinets. |
Applications
| Server & Telecom SMPS | Synchronous Rectification |
|---|---|
|
Use Scenario: 48 V input, 12 V/100 A output DC-DC converter in hyperscale data center rack power supply. IC Role / Device Role / Timing Role: Dual-channel isolated gate driver controlling high-side CoolMOS™ CFD7 and low-side OptiMOS™ 5 in interleaved LLC topology. Use Value: 37 ns propagation delay enables <10 ns dead-time control, reducing conduction loss by 1.2% at full load versus legacy drivers. |
Use Scenario: Secondary-side synchronous rectification in 3.3 kW telecom rectifier with 500 kHz switching frequency. IC Role / Device Role / Timing Role: Isolated driver for parallel Si MOSFETs replacing Schottky diodes in center-tapped transformer output stage. Use Value: 150 V/ns CMTI prevents false turn-on during 100 V/ns primary-side transients, eliminating cross-conduction failures. |
| EV Onboard Charger (OBC) | Industrial Battery Storage Inverter |
|
Use Scenario: Bidirectional AC/DC + DC/DC stage in 11 kW OBC using SiC MOSFET half-bridge with bootstrapped high-side supply. IC Role / Device Role / Timing Role: Functional-isolated driver providing precise timing for ZVS transition in totem-pole PFC and isolated DC/DC stages. Use Value: 4 A/8 A drive strength reduces gate charge time to <25 ns, enabling >200 kHz operation while maintaining <1.5% efficiency penalty. |
Use Scenario: 500 V DC bus inverter for 48 V Li-ion battery stack with 10 kHz PWM modulation in grid-tied energy storage system. IC Role / Device Role / Timing Role: Gate driver for discrete IGBT half-bridge with active Miller clamp and desaturation detection interface. Use Value: DISABLE pin integration allows direct connection to system fault controller - achieves <200 ns shutdown response time during overcurrent events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel functional-isolated gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2EDF7275K | LGA-13 (5 mm × 5 mm) package with identical electrical specs and 4 A/8 A drive; no SLDON pin - fixed 3.3 V VDDI operation only. | Better thermal resistance (RθJA = 42 K/W vs. 58 K/W) but requires re-layout for smaller footprint; unsuitable where SLDO flexibility is needed. | Select when board space is constrained and auxiliary supply is stable 3.3 V; avoid if VDDI may exceed 3.5 V. |
| UCC21540ADWKR | Texas Instruments part with 4 A/6 A drive, 35 ns propagation delay, and 100 V/ns CMTI; reinforced isolation (5.7 kVRMS) but higher cost and larger SOIC-16W package. | Meets reinforced safety standards (UL1577) out-of-box; suitable for medical or grid-connected inverters requiring certified isolation. | Choose only if reinforced certification is mandatory; otherwise 2EDF7275FXUMA1 offers better CMTI and lower cost for industrial SMPS. |
Compared with 2EDF7275K, this DSO-16 variant provides SLDO flexibility and easier thermal management via exposed pad; versus UCC21540ADWKR, it delivers superior noise immunity at lower system cost where functional isolation suffices.
Availability
2EDF7275FXUMA1 is available at Aetrix Electronics and suitable for server SMPS, EV onboard chargers, and industrial battery storage inverters requiring stable component supply, JEDEC-qualified reliability, and functional isolation compliance.
Supply support for 2EDF7275FXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and gallium nitride technologies.
The EiceDRIVER™ 2EDi family was designed specifically for high-efficiency, high-frequency power conversion systems using CoolMOS™, CoolSIC™, and CoolGaN™ switches - emphasizing timing accuracy, isolation robustness, and system-level reliability.
FAQ
What is the maximum recommended switching frequency for 2EDF7275FXUMA1?
The device supports PWM operation up to 10 MHz, but practical maximum frequency depends on gate charge of the driven MOSFET and layout parasitics. For 4 A/8 A drive into a 5 nC gate charge device, reliable operation is confirmed up to 2 MHz in LLC resonant converters with proper PCB routing and gate resistor selection.
Does 2EDF7275FXUMA1 require external bootstrap diodes in half-bridge applications?
Yes - the IC itself does not integrate bootstrap diodes. A fast recovery diode (e.g., BAS21) must be placed between VBus and the VDDA pin, with a bootstrap capacitor (typically 100 nF X7R) from VDDA to GNDA, to sustain high-side gate drive during continuous conduction mode.
Can the DISABLE pin be left unconnected?
No - the DISABLE pin has an internal pull-down resistor, but leaving it floating risks noise-induced false disable events. It must be actively driven low (to GNDI) for normal operation or pulled high (to VDDI) only during intentional shutdown sequences.
Is the 1.5 kVDC isolation rating suitable for 400 V DC bus applications?
Yes - functional isolation at 1.5 kVDC meets IEC 62368-1 requirements for basic insulation in 400 V DC systems when combined with appropriate creepage/clearance layout (≥4.5 mm) and system-level overvoltage category II design.
2EDF7275FXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 16-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Programmable:
- Not Verified
- Driven Configuration:
- Half-Bridge
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 20V
- Logic Voltage - VIL, VIH:
- -, 1.65V
- Current - Peak Output (Source, Sink):
- 4A, 8A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 6.5ns, 4.5ns
- Operating Temperature:
- -40°C ~ 125°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-16-11
2EDF7275FXUMA1 FAQ
1.How can I place an order for 2EDF7275FXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDF7275FXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDF7275FXUMA1 reliable?
The price and inventory of 2EDF7275FXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDF7275FXUMA1 is usually 5 days.
3.What payment methods are accepted for 2EDF7275FXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDF7275FXUMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDF7275FXUMA1?
2EDF7275FXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDF7275FXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDF7275FXUMA1?
For technical support, including 2EDF7275FXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDF7275FXUMA1 requirements.
6.How does Aetrix verify that 2EDF7275FXUMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDF7275FXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDF7275FXUMA1 meets industry standards.
7.What is the process for return or replacement of 2EDF7275FXUMA1?
All 2EDF7275FXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDF7275FXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDF7275FXUMA1 part is unused and in its original packaging.
Return procedure for 2EDF7275FXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDF7275FXUMA1 Tags

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ZXGD3009E6TA
Diodes Incorporated

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1EDN7512BXTSA1
Infineon Technologies
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UCC27517DBVR
Texas Instruments

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MCP1416T-E/OT
Microchip Technology

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MCP1402T-E/OT
Microchip Technology

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MCP1415T-E/OT
Microchip Technology

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MCP1401T-E/OT
Microchip Technology

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IX4428NTR
Littelfuse Inc.

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IRS2005STRPBF
Infineon Technologies

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IRS2008STRPBF
Infineon Technologies

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IX4310TTR
Littelfuse Inc.

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2EDN7524RXTMA1
Infineon Technologies
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