Infineon Technologies 2EDF7275FXUMA2

Overview

2EDF7275FXUMA2 from Infineon Technologies is a dual-channel functional isolated MOSFET gate driver IC with coreless transformer isolation, delivering 4 A source / 8 A sink peak output current per channel for driving CoolMOS™ and OptiMOS™ power switches in high-frequency half-bridge topologies. It features 37 ns typical propagation delay, ±3 ns channel-to-channel mismatch, >150 V/ns CMTI, and 4 V input-side UVLO - optimized for server SMPS and telecom brick converters.

For engineers reviewing the 2EDF7275FXUMA2 datasheet, 2EDF7275FXUMA2 pinout, 2EDF7275FXUMA2 application, or 2EDF7275FXUMA2 equivalent, this device supports fast-switching power systems requiring precise timing, robust noise immunity, and functional isolation compliance at 1.5 kVDC for 10 ms - critical for industrial DC-DC and synchronous rectification designs.

Technical Context

The 2EDF7275FXUMA2 implements two independent galvanically isolated gate driver channels using coreless transformer (CT) technology, enabling operation in high dv/dt environments without signal degradation. Its input logic accepts CMOS/TTL PWM signals with internal pull-down resistors on INA/INB and a dedicated DISABLE pin that simultaneously disables both outputs.

It supports dual-sided supply architecture: input side powered at 3.3 V (with optional SLDO activation for >3.5 V), and output side supplied separately via VDDA/VDDA (4.5–20 V), each with independent 4 V or 8 V UVLO thresholds. Propagation delay variance is tightly controlled at +7/−6 ns across temperature and process variation.

Key Specifications

Pinout & Package

2EDF7275FXUMA2 is housed in a narrow-body DSO-16 package (PG-DSO-16-11) with exposed thermal pad for enhanced power dissipation in high-duty-cycle applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel functional isolated gate driver applications.

Compared with 2EDF7275K, the XUMA2 variant provides SLDO flexibility for wider input voltage range; versus 2EDF8275F, it trades UVLO threshold for tighter brown-out sensitivity - making it optimal for stable 3.3 V controller domains in telecom infrastructure.

Availability

2EDF7275FXUMA2 is available at Aetrix Electronics and suitable for server SMPS, telecom brick converters, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-qualified industrial-grade performance.

Supply support for 2EDF7275FXUMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in silicon carbide and high-voltage MOSFET technologies.

The 2EDi product line delivers isolated gate drivers optimized for fast-switching, high-efficiency power conversion - targeting server, telecom, and industrial SMPS where timing accuracy, CMTI, and isolation reliability are critical design constraints.

FAQ

What is the maximum recommended switching frequency for 2EDF7275FXUMA2?

The device supports PWM signal propagation up to 10 MHz, but practical maximum switching frequency depends on gate charge and layout. For 4 A/8 A drive into typical 650 V CoolMOS™ (Qg ≈ 45 nC), reliable operation extends to 1 MHz in well-designed half-bridge layouts with <5 nH source inductance and proper gate resistor selection (Rg1/Rg2 ≈ 2.2 Ω).

Can 2EDF7275FXUMA2 drive SiC MOSFETs?

Yes - its 8 A sink current, >150 V/ns CMTI, and 37 ns propagation delay make it suitable for discrete 650 V/1200 V SiC MOSFETs. However, gate resistor values must be reduced (e.g., 1–3 Ω) to accommodate faster dv/dt, and layout must minimize loop inductance to avoid oscillation during turn-off.

Does 2EDF7275FXUMA2 require external bootstrap diodes in high-side configurations?

No - the device itself does not integrate bootstrap circuitry. In high-side applications, an external bootstrap capacitor and diode are required on the VDDA rail when using bootstrapped supply; the IC only drives the gate - auxiliary supply generation remains external per standard half-bridge practice.

Is the DISABLE pin electrically compatible with 1.8 V logic controllers?

No - the DISABLE pin is specified for CMOS/TTL logic levels referenced to VDDI (3.3 V). Its VIH minimum is 2.0 V and VIL maximum is 0.8 V at VDDI = 3.3 V. Direct interface with 1.8 V controllers requires level-shifting; a simple resistor-divider or buffer is recommended to ensure reliable disable activation.