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Infineon Technologies 2EDL8024GXUMA1
- Part No.:
- 2EDL8024GXUMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
2EDL8024GXUMA1.pdf
- Description:
- IC GATE DRVR HI/LOW SIDE 8VDFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,188
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Product details
Overview
2EDL8024GXUMA1 from Infineon is a junction-isolated dual-channel gate driver IC for high-side/low-side MOSFET control in synchronous buck, half-bridge, and isolated DC-DC converters. It delivers 4 A source / 5 A sink on high side and 4 A source / 6 A sink on low side, features integrated 120 V bootstrap diode, supports up to 1 MHz switching, and operates from 8–17 V supply. Used in telecom bus converters requiring precise timing and shoot-through immunity.
For engineers reviewing the 2EDL8024GXUMA1 datasheet, 2EDL8024GXUMA1 pinout, 2EDL8024GXUMA1 application, or 2EDL8024GXUMA1 equivalent, this page provides verified functional specifications, validated VDSON-8 package mapping, confirmed truth-table behavior, UVLO thresholds, propagation delay matching (≤6 ns), and real-world design implications for SMPS gate drive integrity.
Technical Context
This device implements independent TTL-compatible input control (HI/LI) with built-in hysteresis for noise immunity, enabling robust operation across –10 V to 20 V input voltage range. Its level-shift architecture uses an on-chip 120 V bootstrap diode and external capacitor to sustain high-side gate drive under fast dV/dt conditions.
The driver integrates synchronized UVLO for both VDD (7.0 V rising, 0.5 V hysteresis) and VHB (5.75 V rising, 0.25 V hysteresis), plus 5 µs high-side UVLO delay with PWM synchronization to prevent marginal gate turn-on. Output impedances are 0.5 Ω (HS pull-down) and 0.35 Ω (LS pull-down) for Miller plateau control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Source Current (HS/LS) | 4 A - sufficient to rapidly charge large Qg MOSFET gates and minimize transition time through Miller plateau |
| Sink Current (HS/LS) | 5 A / 6 A - ensures fast, controlled discharge of gate capacitance to suppress dv/dt-induced re-turn-on |
| Bootstrap Diode Rating | 120 V - enables reliable high-side operation in 48 V–60 V bus systems with margin against ringing and overshoot |
| Propagation Delay Matching | ≤6 ns - maintains volt-second balance in transformer-coupled topologies and prevents core saturation |
| VDD Operating Range | 8 V to 17 V - compatible with standard 12 V rail and regulated auxiliary supplies without external LDO |
| Input Voltage Range | –10 V to +20 V - tolerates ground bounce and controller-level transient coupling without clamping damage |
| Max Switching Frequency | 1 MHz - supports high-density, high-efficiency GaN and SiC-based DC-DC designs |
Pinout & Package
2EDL8024GXUMA1 is housed in PG-VDSON-8-4 (4 mm × 4 mm, exposed thermal pad), a lead-free RoHS-compliant surface-mount package optimized for thermal performance and layout compactness in power stages.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| VDD | Gate drive supply input | Primary 8–17 V supply for internal logic and output stages; bypassed with local ceramic capacitor |
| HB | High-side bootstrap rail | Connects to external bootstrap capacitor; referenced to HS node; powers high-side driver stage |
| HO | High-side gate driver output | Drives gate of high-side N-channel MOSFET; capable of 4 A source / 5 A sink |
| HS | High-side source connection | Switching node return for high-side driver; must be routed with low-inductance path to MOSFET source |
| HI | High-side input control | TTL-compatible, hysteresis-enabled input; independent of VDD level; withstands –10 V to +20 V |
| LI | Low-side input control | TTL-compatible, hysteresis-enabled input; independent of VDD level; withstands –10 V to +20 V |
| VSS | Ground return | Internal connection to exposed thermal pad; requires low-impedance PCB copper pour for thermal and EMI control |
| LO | Low-side gate driver output | Drives gate of low-side N-channel MOSFET; capable of 4 A source / 6 A sink |
Key Features
| Feature | Design Value |
|---|---|
| Independent HI/LI control | Enables flexible PWM, phase-shifted, or complementary gate timing without external logic or dead-time circuitry |
| On-chip 120 V bootstrap diode | Eliminates need for external high-voltage diode, reduces BOM count and layout area, improves reliability |
| UVLO with synchronized release | Prevents partial turn-on during brown-out by blocking HO until HI is low at UVLO exit, avoiding linear-mode stress |
| Ultra-low output impedance | 0.5 Ω (HS) / 0.35 Ω (LS) pull-down resistance actively clamps gate during fast dV/dt events |
| –10 V to +20 V input tolerance | Supports direct interface with analog controllers, DSPs, and isolated gate drivers without level-shifting circuitry |
Applications
| Telecom Isolated Bus Converter | Synchronous Buck Regulator |
|---|---|
Use Scenario: 48 V input to 12 V/20 A output in 1U server power supply with tight efficiency and thermal constraints. IC Role / Device Role / Timing Role: Dual-channel gate driver controlling high-side and low-side Si MOSFETs in primary-side synchronous rectification stage. Use Value: 4 A/5 A drive strength minimizes conduction losses during Miller plateau; ≤6 ns delay matching ensures balanced duty cycle across phases. | Use Scenario: Point-of-load converter for FPGA core voltage (0.8 V/60 A) in AI accelerator card. IC Role / Device Role / Timing Role: High-frequency (800 kHz–1 MHz) gate driver for 30 V-rated trench MOSFETs in single-phase buck topology. Use Value: Integrated 120 V bootstrap diode supports safe high-side operation despite 15 V gate drive swing and 40 V transient spikes on HS node. |
| Class-D Audio Amplifier | Industrial Motor Drive Half-Bridge |
Use Scenario: 200 W full-bridge Class-D amplifier with >90% efficiency and THD < 0.05% at 1 kHz. IC Role / Device Role / Timing Role: Gate driver for upper/lower leg MOSFETs in H-bridge output stage; handles bidirectional current flow and fast zero-crossing transitions. Use Value: –10 V to +20 V input tolerance accommodates PWM signals from analog comparators with ground offset; 5 µs UVLO sync avoids audible click during power-up. | Use Scenario: 24 V DC-fed 3-phase inverter driving 100 W BLDC motor in factory automation actuator. IC Role / Device Role / Timing Role: Single half-bridge driver per phase (used in 3× configuration); controls IGBT or Si MOSFET switches with 100 ns dead-time margin. Use Value: 0.35 Ω LS pull-down impedance suppresses parasitic turn-on during high dV/dt commutation; exposed pad ensures thermal stability at 1.5 W dissipation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-side/low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRS2004PBF | Lower 2.5 A source current; no integrated bootstrap diode; SOIC-8 package with higher thermal resistance | Best suited for <500 kHz, lower-power (<10 A) applications where external diode placement is acceptable | Select when cost sensitivity outweighs thermal performance and board space constraints |
| LM5113MMX/NOPB | Higher 5 A/5 A drive; requires external bootstrap diode; wider 5–14 V VDD range but no VHB UVLO | Preferred for GaN-based designs needing tighter gate control and faster rise/fall times | Select when designing for >1 MHz GaN FETs and external diode integration is already part of layout strategy |
Compared with IRS2004PBF and LM5113MMX/NOPB, 2EDL8024GXUMA1 offers superior thermal performance via VDSON-8 package, eliminates external bootstrap diode BOM item, and adds synchronized high-side UVLO-critical for industrial reliability in fluctuating input conditions.
Availability
2EDL8024GXUMA1 is available at Aetrix Electronics and suitable for telecom bus converters, synchronous buck regulators, Class-D audio amplifiers, and industrial motor drive half-bridges requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial-grade reliability.
Supply support for 2EDL8024GXUMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with leadership in high-voltage gate drivers and silicon carbide solutions.
The EiceDRIVER™ 2EDL8x2x product line targets high-efficiency, high-reliability switching power supplies in datacom, telecom, and industrial motor control-designed specifically for robust gate drive under fast dV/dt, negative transients, and wide input voltage variation.
FAQ
What is the maximum allowable negative voltage on the HS pin?
The HS pin supports negative voltages down to –(24 – VDD) V. For example, with VDD = 12 V, the HS pin tolerates up to –12 V. This protects the high-side driver from negative undershoot caused by stray inductance during hard switching, preventing latch-up or breakdown in the level-shift circuitry.
Does 2EDL8024GXUMA1 require an external bootstrap diode?
No. The device integrates a 120 V rated bootstrap diode internally, eliminating the need for an external diode. This simplifies layout, reduces component count, and improves reliability-especially in high-density power modules where routing HB to HS introduces parasitic inductance.
How does the UVLO synchronization prevent shoot-through during startup?
Upon VDD UVLO release, HO remains blocked if HI is high; HO only propagates when HI is low at the moment UVLO exits. This ensures the high-side FET cannot turn on prematurely before the low-side is fully established, eliminating shoot-through risk during power-up or brown-out recovery.
Can 2EDL8024GXUMA1 drive GaN HEMTs directly?
Yes-its 4 A source / 5 A sink capability, <6 ns delay matching, and ultra-low output impedance make it suitable for driving enhancement-mode GaN FETs with Qg ≤ 15 nC. However, gate resistor selection must be optimized for GaN's faster switching to manage ringing and ensure clean turn-off without oscillation.
2EDL8024GXUMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- High-Side and Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 8V ~ 17V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 4A, 4A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- 90 V
- Rise / Fall Time (Typ):
- 45ns, 45ns
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-VDSON-8-4
2EDL8024GXUMA1 FAQ
1.How can I place an order for 2EDL8024GXUMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDL8024GXUMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDL8024GXUMA1 reliable?
The price and inventory of 2EDL8024GXUMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDL8024GXUMA1 is usually 5 days.
3.What payment methods are accepted for 2EDL8024GXUMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDL8024GXUMA1 transactions.
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4.How is shipping managed for 2EDL8024GXUMA1?
2EDL8024GXUMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDL8024GXUMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDL8024GXUMA1?
For technical support, including 2EDL8024GXUMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDL8024GXUMA1 requirements.
6.How does Aetrix verify that 2EDL8024GXUMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDL8024GXUMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDL8024GXUMA1 meets industry standards.
7.What is the process for return or replacement of 2EDL8024GXUMA1?
All 2EDL8024GXUMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDL8024GXUMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDL8024GXUMA1 part is unused and in its original packaging.
Return procedure for 2EDL8024GXUMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDL8024GXUMA1 Tags
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