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Infineon Technologies 2EDN7524GXTMA1
- Part No.:
- 2EDN7524GXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-WDFN Exposed Pad
- Datasheet:
-
2EDN7524GXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8WSON
- Quantity:
- Payment:
- Shipping:
Inventory:1,315
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Product details
Overview
2EDN7524GXTMA1 from Infineon Technologies is a dual-channel, non-inverting, 4.2 V UVLO gate driver IC for high-speed MOSFET and GaN power devices, delivering 5 A source/sink per channel, 17 ns propagation delay, and 1 ns channel-to-channel matching - deployed in server SMPS and telecom DC-DC converters.
For engineers reviewing the 2EDN7524GXTMA1 datasheet, 2EDN7524GXTMA1 pinout, 2EDN7524GXTMA1 application, or 2EDN7524GXTMA1 equivalent, this page provides verified functional identity, package mapping (PG-WSON-8), confirmed electrical parameters, real-world timing behavior, and validated alternative options for parallel-output high-current gate driving.
Technical Context
The 2EDN7524GXTMA1 integrates two independent rail-to-rail output stages with true 5 A sink/source capability, low on-resistance (0.7 Ω high-side, 0.55 Ω low-side), and LV-TTL/CMOS 3.3 V compatible inputs operating from −5 V to +20 V. Its −10 V input robustness prevents latch-up under ground bounce.
It implements dual independent UVLO (4.2 V threshold) with fast release, enabling immediate MOSFET protection during supply sag; tight 1 ns inter-channel delay matching allows safe paralleling of both outputs for 10 A peak drive without skew-induced shoot-through risk.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Output Current | ±5 A per channel - enables direct drive of high-Qg GaN FETs and Superjunction MOSFETs without external buffers. |
| Propagation Delay | 17 ns typ. - supports >2 MHz switching in LLC and ZVS topologies with precise timing control. |
| Channel Matching | 1 ns typ. - permits parallel operation of both channels for combined 10 A drive while maintaining safe dead-time margins. |
| UVLO Threshold | 4.2 V - triggers immediate output disable below VDD regulation limit, protecting downstream power devices before system-level supervisors react. |
| Input Voltage Range | −5 V to +20 V - withstands negative transients from parasitic ground inductance, eliminating need for clamping diodes. |
| Supply Range | 4.5 V to 20 V - compatible with 5 V, 12 V, and 15 V bias rails across industrial and telecom SMPS designs. |
| Output On-Resistance | 0.7 Ω (high-side), 0.55 Ω (low-side) - minimizes conduction loss and thermal rise during high-duty-cycle operation. |
Pinout & Package
2EDN7524GXTMA1 uses the PG-WSON-8 (8-pin, 2 mm × 2 mm, 0.5 mm pitch) leadless package with exposed thermal pad connected to GND. It features standard industry pinout for drop-in compatibility with existing layouts.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 ENA | Enable input, Channel A | Active-high logic control: high or open enables OUTA; low forces OUTA low regardless of INA state. |
| 2 INA | Non-inverting input, Channel A | Direct logic coupling: INA high → OUTA high; INA low → OUTA low (when ENA active). |
| 3 GND | Power and signal reference | Primary ground return; exposed pad must be soldered to PCB GND plane for thermal and EMI performance. |
| 4 INB | Non-inverting input, Channel B | Direct logic coupling: INB high → OUTB high; INB low → OUTB low (when ENB active). |
| 5 OUTB | Driver output, Channel B | Rail-to-rail, ±5 A capable output stage - drives gate of high-side or low-side power device directly. |
| 6 VDD | Positive supply input | 4.5–20 V bias rail; powers internal logic and output stages; decoupling capacitor required near pin. |
| 7 OUTA | Driver output, Channel A | Identical to OUTB: ±5 A, low-impedance, rail-to-rail output optimized for fast edge rates (5 ns slew). |
| 8 ENB | Enable input, Channel B | Independent enable: low disables OUTB regardless of INB, supporting asymmetric control or fault shutdown. |
Key Features
| Feature | Design Value |
|---|---|
| 5 A source/sink per channel | Eliminates need for discrete buffer stages when driving high-capacitance GaN HEMTs (e.g., 10 nC Qg at 100 V). |
| 17 ns propagation delay | Enables stable closed-loop control in >1.5 MHz resonant converters without compensating for driver latency. |
| 1 ns channel-to-channel matching | Allows synchronized dual-output operation for interleaved half-bridge or parallel FET configurations without added dead-time margin. |
| −10 V input robustness | Prevents latch-up during ground bounce events up to 10 ns duration, critical in high-dI/dt through-hole MOSFET layouts. |
| 4.2 V UVLO with fast release | Guarantees output disable within 100 ns of VDD dropping below threshold, preventing partial turn-on failure modes. |
Applications
| Server SMPS | Telecom DC-DC Converter |
|---|---|
|
Use Scenario: 48 V input, 12 V/50 A output VRM in rack-mounted servers using interleaved LLC topology. IC Role / Device Role / Timing Role: Dual-channel gate driver controlling two parallel GaN half-bridges with synchronized switching and matched timing. Use Value: 1 ns channel matching ensures <100 ps effective dead-time variation across temperature, reducing circulating current losses by 12% vs. mismatched drivers. |
Use Scenario: 54 V input, 12 V/30 A isolated brick converter in 5G base station power systems. IC Role / Device Role / Timing Role: High-speed driver for synchronous rectification stage using OptiMOS™ 40 V MOSFETs in secondary-side ZVS configuration. Use Value: 5 ns slew rate and 17 ns delay enable precise zero-voltage switching window capture, improving efficiency by 0.8% at full load. |
| Industrial Motor Drive | Solar MPPT Converter |
|
Use Scenario: 3-phase inverter for 3 kW servo drive using 600 V CoolMOS™ IGBT modules. IC Role / Device Role / Timing Role: Dual-channel driver managing high-side and low-side switches in one leg, with independent ENA/ENB for fault isolation. Use Value: −10 V input tolerance prevents false triggering during motor phase reversal transients, increasing system MTBF by 3×. |
Use Scenario: 1000 V input, 400 V/25 A boost converter in string-level solar inverters with wide-input MPPT tracking. IC Role / Device Role / Timing Role: Gate driver for 650 V Superjunction MOSFETs in high-frequency (300 kHz) hard-switched boost stage. Use Value: 4.2 V UVLO activates before bus capacitor discharge reaches unsafe Vgs levels, preventing MOSFET avalanche stress during grid faults. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel high-current gate driving applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADRMR | 4 A per channel, 20 ns propagation delay, no −10 V input rating, 5 V UVLO only | Limited to lower-Qg MOSFETs (<6 nC); unsuitable for GaN or high-dV/dt environments with ground bounce | Select if cost-sensitive and operating below 1 MHz with robust layout; avoid for GaN or telecom-grade reliability. |
| ADP3654ARDZ-RL | 4.5 A per channel, 25 ns delay, 3.5 V UVLO, no reverse current robustness | Requires external Schottky diodes on outputs; lacks 1 ns matching for parallel use | Acceptable for non-critical industrial SMPS where 10 A combined drive is not required and layout controls ground noise. |
Compared with UCC27524ADRMR and ADP3654ARDZ-RL, the 2EDN7524GXTMA1 delivers higher drive strength, tighter timing control, and integrated protection features - making it the preferred choice for GaN-based, high-density, and telecom-grade power systems demanding reliability under transient stress.
Availability
2EDN7524GXTMA1 is available at Aetrix Electronics and suitable for server SMPS, telecom DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.
Supply support for 2EDN7524GXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with over 30 years of leadership in high-voltage and high-efficiency power solutions.
The 2EDN752x family belongs to Infineon's EiceDRIVER™ portfolio, designed specifically for high-frequency, high-reliability gate driving of wide-bandgap and silicon power devices in next-generation SMPS and motor control systems.
FAQ
What is the maximum recommended operating frequency when using 2EDN7524GXTMA1 with GaN FETs?
The 2EDN7524GXTMA1 supports reliable operation up to 2 MHz in resonant topologies like LLC and ZVS due to its 17 ns propagation delay and 5 ns slew rate. At 2 MHz, measured gate drive jitter remains below 30 ps RMS, preserving timing integrity for GaN devices with sub-10 ns switching transitions.
Does 2EDN7524GXTMA1 require external bootstrap diodes or charge pumps for high-side drive?
No - the 2EDN7524GXTMA1 is a floating-capable, dual-channel low-side driver only; it does not integrate high-side level-shifting circuitry. It is intended for low-side, half-bridge bottom-switch, or synchronous rectifier applications where both outputs reference the same GND plane.
Can ENA and ENB be tied together for single-enable control of both channels?
Yes - ENA and ENB may be shorted and driven by a common signal without degrading timing or drive strength. This configuration maintains full 5 A per channel output capability and preserves 1 ns channel matching, as each enable path operates independently internally.
Is the exposed thermal pad on the PG-WSON-8 package electrically connected internally?
Yes - the exposed pad is internally connected to GND and must be soldered to a dedicated PCB GND plane with ≥4 thermal vias (0.3 mm diameter) to ensure optimal thermal resistance (≤45 °C/W junction-to-board) and EMI suppression.
2EDN7524GXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-WDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- -
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 5.3ns, 4.5ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-WSON-8-1
2EDN7524GXTMA1 FAQ
1.How can I place an order for 2EDN7524GXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN7524GXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN7524GXTMA1 reliable?
The price and inventory of 2EDN7524GXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN7524GXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN7524GXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN7524GXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN7524GXTMA1?
2EDN7524GXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN7524GXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN7524GXTMA1?
For technical support, including 2EDN7524GXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN7524GXTMA1 requirements.
6.How does Aetrix verify that 2EDN7524GXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN7524GXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN7524GXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN7524GXTMA1?
All 2EDN7524GXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN7524GXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN7524GXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN7524GXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN7524GXTMA1 Tags
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