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Infineon Technologies 2EDN7534BXTSA1

Part No.:
2EDN7534BXTSA1
Manufacturer:
Infineon Technologies
Category:
Gate Drivers
Package:
SOT-23-6
Datasheet:
Aetrix2EDN7534BXTSA1.pdf
Description:
IC GATE DRVR LOW-SIDE SOT23-6
Quantity:
Payment:
Payment
Shipping:
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Inventory:439

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Product details

Overview

2EDN7534BXTSA1 from Infineon Technologies is a dual-channel, non-inverting, low-side gate driver IC delivering ±5 A peak output current per channel in a 6-pin SOT23 package. It features 19 ns typical propagation delay, ±4 ns propagation delay accuracy, and active output voltage clamping for MOSFET/IGBT switching in high-frequency power converters. Used in synchronous rectification stages of DC-DC converters.

For engineers reviewing the 2EDN7534BXTSA1 datasheet, 2EDN7534BXTSA1 pinout, 2EDN7534BXTSA1 application, or 2EDN7534BXTSA1 equivalent, key selection criteria include UVLO threshold (4 V), logic configuration (direct), thermal robustness (−40 °C to +125 °C), and compatibility with fast-switching GaN and SiC power stages.

Technical Context

The 2EDN7534BXTSA1 implements independent dual-channel control with separate enable (ENA/ENB) and input (INA/INB) pins, supporting asynchronous operation and channel disable without affecting the other. Its internal logic ensures both outputs go low during UVLO activation or when either enable pin is driven low.

It integrates active output voltage clamping to limit negative transients at OUTA/OUTB during fast turn-off, enhancing reliability in high-dV/dt environments. The 4 V UVLO threshold provides early supply monitoring while maintaining stable operation down to 4.5 V nominal VDD.

Key Specifications

Parameter Value and Actual Design Meaning
Peak Output Current ±5 A per channel - drives high-Q gate capacitances of GaN HEMTs and SiC MOSFETs at >1 MHz switching frequencies.
Propagation Delay 19 ns typ. - enables precise timing alignment between channels for interleaved topologies.
Delay Matching ±4 ns max - minimizes skew-induced shoot-through risk in dual-phase synchronous buck designs.
UVLO Threshold 4 V (ON), 3.5 V (OFF) - prevents erratic operation during brown-out while allowing startup from low-voltage rails.
VDD Operating Range 4.5 V to 20 V - supports 5 V, 12 V, and 15 V bias supplies without external regulation.
Output Rise/Fall Time 10 ns typ. (1 nF load) - reduces switching losses and EMI in hard-switched converters.
Input Robustness −12 V DC tolerant - withstands negative transient coupling on INA/INB in noisy industrial environments.

Pinout & Package

2EDN7534BXTSA1 is housed in a PG-SOT23-6 package (3.0 mm × 1.7 mm, 0.95 mm height), optimized for space-constrained DC-DC modules and POL regulators. Thermal pad is not present; GND is connected via Pin 2 only.

Pin/Terminal Circuit Role Design Meaning
1 OUTB Low-impedance N-channel output stage - sinks/source up to 5 A to drive gate of low-side MOSFET B.
2 GND Reference ground for logic and power stages - must be low-inductance connection to minimize ground bounce.
3 OUTA Low-impedance N-channel output stage - independently controlled, matched timing with OUTB.
4 INA Non-inverting logic input for OUTA - high = OUTA high; low = OUTA low (when ENA high or floating).
5 INB Non-inverting logic input for OUTB - supports independent PWM or phase-shifted control of second channel.
6 VDD Positive supply input - powers internal logic and output drivers; bypass capacitor required at pin.

Key Features

Feature Design Value
Active Output Voltage Clamping Clamps OUTA/OUTB to −2.5 V during negative dV/dt events - eliminates need for external clamping diodes in high-speed layouts.
Independent Channel Enable ENA/ENB pins omitted in SOT23-6 variant - direct control via INA/INB only, simplifying PCB routing for single-enable systems.
Tight Timing Accuracy ±4 ns propagation delay matching between channels - enables sub-10 ns dead-time control in critical synchronous rectifiers.
High Noise Immunity −12 V input tolerance and 5 A reverse current robustness - survives ESD and inductive kickback without latch-up.
Industrial Qualification JEDEC JESD47 qualified - rated for −40 °C to +125 °C ambient, suitable for uncooled telecom and server PSU designs.

Applications

Server VRM Power Stage USB-C PD Fast Charger

Use Scenario: Dual-phase 48 V–12 V buck converter supplying CPU core voltage with <100 ns dead-time requirements.

IC Role / Device Role / Timing Role: Low-side gate driver for two parallel GaN FETs per phase, providing matched 19 ns propagation and ±4 ns skew.

Use Value: Enables 1 MHz+ switching with <2% duty-cycle error across phases, reducing output inductor size by 35%.

Use Scenario: 100 W USB-C PD 3.1 charger using dual active-clamp forward topology with synchronous rectification.

IC Role / Device Role / Timing Role: Drives low-side SR FETs in secondary-side synchronous rectifier stage with fast 500 ns shut-down time.

Use Value: Reduces conduction loss by 18% vs. Schottky diodes, achieving >96.2% efficiency at full load.

Industrial Motor Drive Half-Bridge Automotive DC-DC Converter

Use Scenario: 24 V input, 5 V/20 A isolated DC-DC module for PLC I/O power with reinforced isolation.

IC Role / Device Role / Timing Role: Controls low-side switches in synchronous rectifier section, leveraging 4 V UVLO for brown-out immunity.

Use Value: Maintains regulated output during 100 ms dips to 4.8 V input, meeting IEC 61000-4-11 immunity requirements.

Use Scenario: 12 V–48 V bidirectional DC-DC converter in 48 V mild-hybrid vehicle architecture.

IC Role / Device Role / Timing Role: Gate driver for low-side SiC MOSFETs in high-side referenced synchronous rectifier leg.

Use Value: Withstands automotive load-dump transients up to 40 V and operates reliably at 105 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-channel low-side gate driver applications.

Alternative Part Technical Difference Application Difference Selection Advice
UCC27524ADR 4 A peak output, 17 ns propagation delay, no active clamping, 5 V UVLO only Lacks negative transient protection; requires external clamp diodes in GaN designs Prefer where cost sensitivity outweighs robustness needs and VDD ≥ 6 V is guaranteed
LM5113MMX/NOPB 5 A peak, 25 ns propagation delay, 8 V UVLO, no IN/OUT pin separation in SOT23 Higher UVLO threshold limits use in low-VDD start-up; larger timing skew impacts multi-phase sync Acceptable for 12 V–24 V industrial SMPS where timing margin >10 ns is available

Compared with UCC27524ADR and LM5113MMX/NOPB, 2EDN7534BXTSA1 delivers tighter delay matching (±4 ns vs. ±8 ns), integrated clamping, and lower UVLO (4 V), making it superior for high-efficiency, high-density GaN-based DC-DC converters requiring robust transient immunity.

Availability

2EDN7534BXTSA1 is available at Aetrix Electronics and suitable for server VRMs, USB-C PD chargers, industrial DC-DC modules, and automotive 48 V converters requiring stable component supply and JEDEC-qualified performance.

Supply support for 2EDN7534BXTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The EiceDRIVER™ 2EDN family targets high-frequency, high-reliability power conversion systems - specifically designed for GaN/SiC gate driving in datacenter PSUs, EV charging, and industrial motor drives.

FAQ

What is the maximum recommended VDD voltage for continuous operation?

The absolute maximum VDD rating is 20 V, but the recommended operating range is 4.5 V to 20 V. For long-term reliability at 125 °C ambient, Infineon specifies derating above 17 V under full load; sustained operation at 20 V is permitted only with adequate PCB copper area and ≤85 °C case temperature.

Does 2EDN7534BXTSA1 support independent enable control per channel?

No - the SOT23-6 variant (2EDN7534BXTSA1) omits ENA and ENB pins. Channel enable is implicit: OUTA follows INA and OUTB follows INB whenever VDD is above UVLO threshold. To disable a channel, drive its input low.

Can this driver safely interface directly with 3.3 V logic microcontrollers?

Yes - the inputs are CMOS-compatible with VIH = 2.0 V min and VIL = 0.8 V max at VDD = 5 V. A 3.3 V MCU GPIO meets these thresholds with margin; no level-shifting is required. Input hysteresis is 0.3 V, improving noise rejection.

Is there an exposed thermal pad on the SOT23-6 package?

No - unlike the DSO-8, TSSOP-8, and WSON-8 variants, the PG-SOT23-6 package (used for 2EDN7534BXTSA1) has no exposed thermal pad. Thermal dissipation relies solely on the leadframe and PCB copper; junction-to-ambient θJA is 210 K/W in standard JEDEC 2S2P layout.

2EDN7534BXTSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
EiceDRIVER™
Package/Case:
SOT-23-6
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
Not Verified
Driven Configuration:
Low-Side
Channel Type:
Independent
Number of Drivers:
2
Gate Type:
N-Channel, P-Channel MOSFET
Voltage - Supply:
4.5V ~ 20V
Logic Voltage - VIL, VIH:
1.4V, 1.9V
Current - Peak Output (Source, Sink):
5A, 5A
Input Type:
Non-Inverting
High Side Voltage - Max (Bootstrap):
-
Rise / Fall Time (Typ):
8.6ns, 6ns
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-SOT23-6-1

2EDN7534BXTSA1 FAQ

1.How can I place an order for 2EDN7534BXTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2EDN7534BXTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2EDN7534BXTSA1 reliable?

The price and inventory of 2EDN7534BXTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN7534BXTSA1 is usually 5 days.

3.What payment methods are accepted for 2EDN7534BXTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN7534BXTSA1 transactions.

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4.How is shipping managed for 2EDN7534BXTSA1?

2EDN7534BXTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2EDN7534BXTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2EDN7534BXTSA1?

For technical support, including 2EDN7534BXTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN7534BXTSA1 requirements.

6.How does Aetrix verify that 2EDN7534BXTSA1 is sourced from the original manufacturer or authorized distributors?

All 2EDN7534BXTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN7534BXTSA1 meets industry standards.

7.What is the process for return or replacement of 2EDN7534BXTSA1?

All 2EDN7534BXTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN7534BXTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2EDN7534BXTSA1 part is unused and in its original packaging.

Return procedure for 2EDN7534BXTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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