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Infineon Technologies 2EDN7534FXTMA1
- Part No.:
- 2EDN7534FXTMA1
- Manufacturer:
- Infineon Technologies
- Category:
- Gate Drivers
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
2EDN7534FXTMA1.pdf
- Description:
- IC GATE DRVR LOW-SIDE 8SOIC
- Quantity:
- Payment:
- Shipping:
Inventory:1,285
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Product details
Overview
2EDN7534FXTMA1 from Infineon Technologies is a dual-channel low-side gate driver IC delivering ±5 A peak source/sink current per channel, 19 ns typical propagation delay with +6/−4 ns accuracy, and 4 V UVLO threshold. It drives N-channel MOSFETs in synchronous rectification stages of DC-DC converters and industrial SMPS where fast switching, tight timing control, and robust input tolerance (−12 V) are required.
For engineers reviewing the 2EDN7534FXTMA1 datasheet, 2EDN7534FXTMA1 pinout, 2EDN7534FXTMA1 application, or 2EDN7534FXTMA1 equivalent, key selection criteria include output current capability, propagation delay matching between channels, UVLO hysteresis, active output clamping response time (1.2 V / 20 ns), and compatibility with 6- or 8-pin PCB footprints across DSO, TSSOP, WSON, SOT23, and TSNP packages.
Technical Context
This device implements two independent low-side drivers with non-inverting logic configuration, enabling direct control of high-frequency power switches without external level-shifting. Each channel features dedicated enable (ENA/ENB) and input (INA/INB) pins, allowing per-channel gating and fault isolation.
The internal UVLO circuit monitors VDD with 4 V turn-on and ~0.5 V hysteresis, ensuring reliable startup above 4.5 V and safe shutdown below 4 V. Fast active output voltage clamping limits negative swing to 1.2 V within 20 ns, protecting MOSFET gates during fast dV/dt transients.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Peak Output Current | ±5 A per channel - sufficient to drive large GaN or SiC MOSFETs with <10 nC gate charge at >1 MHz switching frequencies |
| Propagation Delay | 19 ns typ. - enables precise dead-time control in half-bridge topologies with minimal timing skew |
| Delay Matching Accuracy | +6/−4 ns - ensures <10 ns inter-channel skew for balanced dual-switch timing in synchronous rectifiers |
| UVLO Threshold | 4 V (ON) / ~3.5 V (OFF) - provides stable operation down to 4.5 V supply while preventing erratic behavior during brownout |
| Active Output Clamp | 1.2 V / 20 ns - suppresses negative gate voltage spikes induced by parasitic inductance, avoiding unintended turn-on |
| Input Robustness | −12 V tolerance - withstands negative transients on INA/INB without latch-up or damage in noisy industrial environments |
| VDD Operating Range | 4.5 V to 20 V - supports wide-input DC-DC controllers and battery-backed systems up to 18 V nominal rails |
Pinout & Package
2EDN7534FXTMA1 is supplied in an 8-pin PG-DSO-8 package (RoHS-compliant, lead-free, exposed pad optional). The package measures 6.0 mm × 4.9 mm × 1.75 mm with 1.27 mm pitch and thermal pad optimized for PCB heat dissipation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - ENA | Enable input, Channel A | Active-high logic control: high or open = INA controls OUTA; low = OUTA forced low regardless of INA |
| 2 - INA | Input signal, Channel A | Non-inverting logic input: high → OUTA high; low → OUTA low (when ENA active) |
| 3 - GND | Power ground reference | Common return path for VDD, outputs, and internal logic; must be low-inductance connection to minimize ground bounce |
| 4 - INB | Input signal, Channel B | Non-inverting logic input: high → OUTB high; low → OUTB low (when ENB active) |
| 5 - OUTB | Driver output, Channel B | Low-impedance push-pull stage capable of ±5 A sink/source into capacitive gate loads |
| 6 - VDD | Positive supply input | Primary power rail (4.5–20 V); powers internal logic, level shifters, and output stages |
| 7 - OUTA | Driver output, Channel A | Low-impedance push-pull stage identical to OUTB; matched timing ensures symmetrical drive in dual-phase designs |
| 8 - ENB | Enable input, Channel B | Active-high logic control: high or open = INB controls OUTB; low = OUTB forced low regardless of INB |
Key Features
| Feature | Design Value |
|---|---|
| Dual independent enable inputs | Per-channel ENA/ENB pins allow asymmetric gating, phase shedding, or fault-based channel disable without software intervention |
| Tight propagation delay matching | +6/−4 ns inter-channel skew enables sub-20 ns dead-time implementation in high-efficiency LLC resonant converters |
| Fast UVLO start-up/shut-down | 1.8 µs start-up and 500 ns shut-down times support rapid system re-enabling after transient dips and prevent glitch-induced switch misfiring |
| Active output voltage clamping | Clamps negative gate excursions to 1.2 V within 20 ns, eliminating need for external Zener diodes in high-dV/dt GaN applications |
| −12 V input robustness | Withstands negative transients on INA/INB without latch-up-critical for isolated gate drive feedback paths in flyback or PSR topologies |
Applications
| Server VRM Power Stage | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: Driving parallel high-side and low-side MOSFETs in multiphase buck converters supplying CPU/GPU core voltage. IC Role / Device Role / Timing Role: Low-side gate driver providing synchronized, high-current gate drive with matched propagation delay to minimize shoot-through risk. Use Value: ±5 A output current reduces gate resistor requirements; 19 ns delay enables <50 ns dead-time tuning for >95% efficiency at 1 MHz switching. |
Use Scenario: Controlling synchronous rectifier MOSFETs in isolated forward or LLC converters for factory automation PLCs. IC Role / Device Role / Timing Role: Dual low-side driver managing two independent secondary-side switches with per-channel enable for adaptive conduction control. Use Value: 4 V UVLO ensures clean startup from 5 V auxiliary rails; −12 V input tolerance prevents false triggering from transformer leakage coupling. |
| Telecom AC-DC Front-End | Renewable Energy Inverter Auxiliary Supply |
|
Use Scenario: Driving MOSFETs in active clamp forward or resonant converters powering telecom base station RF modules. IC Role / Device Role / Timing Role: Precision-timed dual gate driver supporting zero-voltage switching (ZVS) with sub-20 ns channel-to-channel delay matching. Use Value: 20 ns active clamping response protects GaN HEMTs from negative gate stress during hard commutation events. |
Use Scenario: Managing synchronous rectification in auxiliary DC-DC supplies for solar string inverters operating in harsh outdoor environments. IC Role / Device Role / Timing Role: Industrial-qualified low-side driver delivering reliable gate control under wide temperature (−40 °C to +125 °C) and voltage (4.5–20 V) ranges. Use Value: JEDEC JESD47 qualification confirms long-term reliability in continuous 24/7 operation; 500 ns UVLO shutdown prevents latch-up during grid transients. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-channel low-side gate driver applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| UCC27524ADR | 4 A peak output, 17 ns propagation delay, no active output clamping, 5 V UVLO only | Lacks negative voltage clamping and −12 V input robustness; requires external protection in GaN designs | Preferred where cost sensitivity outweighs need for ultra-fast clamping or industrial-grade input ruggedness |
| LM5113MMX/NOPB | 5 A peak output, 25 ns propagation delay, 8 V UVLO only, no enable pins per channel | Single global enable instead of dual ENA/ENB; higher delay increases minimum dead-time requirement | Suitable for simpler dual-MOSFET drives where independent channel control is not required |
Compared with UCC27524ADR and LM5113MMX/NOPB, 2EDN7534FXTMA1 offers superior timing precision (+6/−4 ns vs. ±10 ns typical), integrated active clamping (eliminating 2× external Zeners), and true dual-enable architecture-making it optimal for high-density, high-reliability synchronous rectification in industrial and telecom power systems.
Availability
2EDN7534FXTMA1 is available at Aetrix Electronics and suitable for server VRM power stages, industrial DC-DC converters, and telecom AC-DC front-end designs requiring stable component supply, JEDEC-qualified reliability, and consistent parametric performance across production lots.
Supply support for 2EDN7534FXTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in high-performance gate drivers and silicon carbide solutions.
The EiceDRIVER™ 2EDN family targets high-frequency, high-efficiency power conversion systems-designed specifically for synchronous rectification, SMPS, and DC-DC converter applications demanding precision timing, rugged inputs, and compact packaging.
FAQ
What is the maximum recommended VDD supply voltage for continuous operation?
The absolute maximum VDD rating is 20 V, but continuous operation is specified up to 18 V per the datasheet's operating range (4.5 V to 20 V). At 18 V, the device maintains full ±5 A output capability and meets all timing specifications across −40 °C to +125 °C ambient temperature. Exceeding 18 V may reduce lifetime reliability despite surviving short transients.
Can 2EDN7534FXTMA1 drive both N-channel and P-channel MOSFETs as a low-side switch?
2EDN7534FXTMA1 is optimized for N-channel MOSFETs in low-side configuration only. Its output stage is a push-pull driver referenced to GND, with no floating supply or level-shifting capability. Driving P-channel devices would require inversion of logic and violates the intended topology-no design support or characterization exists for P-channel use.
Is the exposed thermal pad on the DSO-8 package electrically connected internally?
No-the exposed pad on the PG-DSO-8 package (2EDN7534FXTMA1) is not internally connected to any die node. It serves solely as a thermal interface and must be soldered to a PCB copper pour tied to GND for optimal heat dissipation and EMI reduction. Electrical isolation from VDD, OUTA, or OUTB is maintained per package drawings in Infineon's datasheet Section 9.2.
Does the 4 V UVLO setting include hysteresis, and what is its value?
Yes, the 4 V UVLO has approximately 0.5 V hysteresis: turn-on occurs at 4.0 V (typ.), and turn-off occurs at ~3.5 V (typ.). This prevents oscillation during slow-rising or noisy VDD ramps and ensures clean, glitch-free startup and shutdown behavior across temperature and process variation.
2EDN7534FXTMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- EiceDRIVER™
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Driven Configuration:
- Low-Side
- Channel Type:
- Independent
- Number of Drivers:
- 2
- Gate Type:
- N-Channel, P-Channel MOSFET
- Voltage - Supply:
- 4.5V ~ 20V
- Logic Voltage - VIL, VIH:
- 1.4V, 1.9V
- Current - Peak Output (Source, Sink):
- 5A, 5A
- Input Type:
- Non-Inverting
- High Side Voltage - Max (Bootstrap):
- -
- Rise / Fall Time (Typ):
- 8.6ns, 6ns
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-DSO-8
2EDN7534FXTMA1 FAQ
1.How can I place an order for 2EDN7534FXTMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2EDN7534FXTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2EDN7534FXTMA1 reliable?
The price and inventory of 2EDN7534FXTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2EDN7534FXTMA1 is usually 5 days.
3.What payment methods are accepted for 2EDN7534FXTMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2EDN7534FXTMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2EDN7534FXTMA1?
2EDN7534FXTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2EDN7534FXTMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2EDN7534FXTMA1?
For technical support, including 2EDN7534FXTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2EDN7534FXTMA1 requirements.
6.How does Aetrix verify that 2EDN7534FXTMA1 is sourced from the original manufacturer or authorized distributors?
All 2EDN7534FXTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2EDN7534FXTMA1 meets industry standards.
7.What is the process for return or replacement of 2EDN7534FXTMA1?
All 2EDN7534FXTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2EDN7534FXTMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2EDN7534FXTMA1 part is unused and in its original packaging.
Return procedure for 2EDN7534FXTMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2EDN7534FXTMA1 Tags
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