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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 2N7002L6327HTSA1

Name: 2N7002L6327HTSA1
Brand: Infineon Technologies
SKU: 2N7002L6327HTSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N7002L6327HTSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: 2N7002L6327HTSA1.pdf

Description:: MOSFET N-CH 60V 300MA SOT23-3

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Product details

Overview

2N7002L6327HTSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level MOSFET in PG-SOT23 package, rated for 60 V V_DS, 0.3 A continuous drain current at 25°C, and 4 Ω R_DS(on) at V_GS = 4.5 V. It features avalanche rating, fast switching (t_r = 3.3 ns), and RoHS/halogen-free compliance, commonly used in low-side load switching in portable power management and LED driver circuits.

For engineers reviewing the 2N7002L6327HTSA1 datasheet, 2N7002L6327HTSA1 pinout, 2N7002L6327HTSA1 application, or 2N7002L6327HTSA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.5–2.5 V), thermal resistance (R_thJA = 250 K/W), reverse diode recovery (t_rr = 8.5–13 ns), and SOT23 footprint constraints.

Technical Context

This discrete MOSFET operates in enhancement mode with a threshold voltage centered at 2.1 V and supports direct interfacing with 3.3 V and 5 V microcontroller GPIOs. Its optimized gate charge (Q_g = 0.4–0.6 nC) and low output capacitance (C_oss = 4.1–6 pF) enable efficient high-frequency switching up to several MHz in DC-DC converter synchronous rectification and PWM-controlled loads.

The integrated body diode exhibits forward voltage of 0.96–1.2 V at 0.5 A and reverse recovery time under 13 ns, supporting bidirectional current handling in flyback snubbers and half-bridge topologies where commutation speed and loss minimization are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	60 V - supports input rails up to 48 V systems with margin for transients
R_DS(on) @ 4.5 V	4 Ω max - enables <120 mW conduction loss at 0.25 A load current
I_D continuous	0.3 A @ 25°C - suitable for signal-level switching, not power-stage duty
Q_g total	0.6 nC max - reduces gate drive power and enables >1 MHz PWM operation
t_r/t_f	3.3/3.1 ns typ - ensures minimal overlap loss in hard-switched topologies
V_GS(th)	1.5–2.5 V - guarantees turn-on with standard logic-level outputs without level shifters
E_AS	1.3 mJ - provides single-pulse avalanche ruggedness for inductive load switching

Pinout & Package

Package: PG-SOT23 (JEDEC TO-236AB), 3-pin surface-mount, 1.3 mm × 2.9 mm footprint, 0.95 mm height, designed for automated pick-and-place and reflow soldering on minimal PCB area.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts logic-level voltage; requires <0.1 nC to cross threshold due to low C_iss (13–20 pF)
2 (Source)	Reference node	Common return path for load current; tied to ground in low-side switch configuration
3 (Drain)	Power output terminal	Connects to switched load; handles up to 60 V and 0.3 A with defined SOA limits

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, compatible with 3.3 V MCU I/O without external drivers
Avalanche-rated structure	Guaranteed 1.3 mJ single-pulse energy withstand, enabling robustness in inductive load switching
Fast switching performance	Turn-on delay <4.5 ns and rise time <5 ns support high-frequency PWM with low switching loss
Halogen-free & RoHS	Complies with IEC61249-2-21 and JESD22-A114 Class 0 ESD (<250 V HBM), suitable for consumer and industrial assembly

Applications

LED Driver Switching

USB Port Power Control

Use Scenario: Driving indicator or backlight LEDs in battery-powered devices using PWM dimming.

IC Role / Device Role / Timing Role: Low-side switch controlled by MCU PWM output to modulate average LED current.

Use Value: 4 Ω R_DS(on) at 4.5 V ensures <250 mW dissipation at 250 mA, eliminating heatsink need in compact layouts.

Use Scenario: Enabling/disabling VBUS power to downstream USB peripherals based on host policy.

IC Role / Device Role / Timing Role: Load switch isolating 5 V rail; responds to logic-level enable signal from USB controller.

Use Value: Logic-level threshold and low Q_g allow clean, fast turn-on/off transitions without shoot-through risk.

Microcontroller GPIO Expander

Low-Power Sensor Interface

Use Scenario: Extending digital output capability of resource-constrained MCUs to drive higher-current sensors or actuators.

IC Role / Device Role / Timing Role: Signal-level translator amplifying GPIO current drive from µA to 300 mA.

Use Value: 0.3 A rating and SOT23 size enable direct integration near MCU pins without routing high-current traces.

Use Scenario: Power gating for analog sensors (e.g., temperature, humidity) during sleep cycles to reduce system quiescent current.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling sensor VDD rail under firmware control.

Use Value: Sub-µA I_D(off) (<0.1 µA at 25°C) prevents leakage-induced battery drain over weeks of standby.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004K-7	R_DS(on) = 2.8 Ω @ 4.5 V; slightly lower threshold (1.0–2.0 V); same SOT23-3 package	Better conduction efficiency below 200 mA; tighter V_GS(th) distribution improves batch consistency	Preferred when minimizing I²R loss dominates over cost or availability
BSS138W-7-F	R_DS(on) = 3.5 Ω @ 4.5 V; higher V_DS = 50 V; same footprint but different marking and reel orientation	Limited to ≤50 V systems; slightly faster t_r (2.5 ns) but lower avalanche rating (no E_AS spec)	Selected when 50 V rating suffices and faster edge rates are prioritized over ruggedness

Compared with DMN2004K-7 and BSS138W-7-F, the 2N7002L6327HTSA1 offers balanced trade-offs: superior avalanche capability (1.3 mJ), 60 V rating for wider supply margin, and proven reliability in high-volume portable designs-making it optimal for cost-sensitive, ruggedness-critical low-power switching.

Availability

2N7002L6327HTSA1 is available at Aetrix Electronics and suitable for LED driver switching, USB port power control, and microcontroller GPIO expansion requiring stable component supply and consistent SOT23-3 sourcing.

Supply support for 2N7002L6327HTSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The 2N7002 belongs to Infineon's OptiMOS™ small-signal transistor family, engineered for high-speed, logic-compatible switching in space-constrained, low-power applications across consumer, industrial, and computing segments.

FAQ

Is the 2N7002L6327HTSA1 suitable for high-frequency PWM above 1 MHz?

Yes. With typical gate charge of 0.5 nC and rise/fall times under 5 ns, this MOSFET supports clean switching at 1–2 MHz in low-duty-cycle applications. Layout parasitics and gate driver strength become limiting factors beyond that range-not device intrinsic limits.

Can it replace a BSS138 in existing designs?

Yes, with verification. Both use SOT23-3 and share pinout, but 2N7002L6327HTSA1 has higher V_DS (60 V vs. 50 V), higher R_DS(on) (4 Ω vs. 3.5 Ω @ 4.5 V), and specified avalanche energy-making it a drop-in upgrade where ruggedness matters more than marginal R_DS(on) reduction.

What is the maximum safe operating temperature for continuous use?

The junction temperature must not exceed 150°C. At ambient 70°C, derated continuous drain current is 0.24 A. Thermal design must account for R_thJA = 250 K/W on minimal copper; adding 20 mm² of 1 oz Cu on both sides reduces R_thJA to ~120 K/W per Infineon's layout guidelines.

Does the "H6327" marking indicate halogen-free status?

Yes. Per Infineon documentation, "H6327" denotes halogen-free construction compliant with IEC61249-2-21, confirmed by material declarations and RoHS test reports. The "HTSA1" suffix indicates tape-and-reel packaging (3000 pcs/reel) with dry pack moisture sensitivity level 1.

2N7002L6327HTSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 300mA (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 500mA, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 0.6 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 20 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 500mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-SOT23-PO

2N7002L6327HTSA1 FAQ

1.How can I place an order for 2N7002L6327HTSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N7002L6327HTSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N7002L6327HTSA1 reliable?

The price and inventory of 2N7002L6327HTSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N7002L6327HTSA1 is usually 5 days.

3.What payment methods are accepted for 2N7002L6327HTSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N7002L6327HTSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N7002L6327HTSA1?

2N7002L6327HTSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N7002L6327HTSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N7002L6327HTSA1?

For technical support, including 2N7002L6327HTSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N7002L6327HTSA1 requirements.

6.How does Aetrix verify that 2N7002L6327HTSA1 is sourced from the original manufacturer or authorized distributors?

All 2N7002L6327HTSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N7002L6327HTSA1 meets industry standards.

7.What is the process for return or replacement of 2N7002L6327HTSA1?

All 2N7002L6327HTSA1 units undergo pre-shipment inspection (PSI). If there is an issue with 2N7002L6327HTSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N7002L6327HTSA1 part is unused and in its original packaging.

Return procedure for 2N7002L6327HTSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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