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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Bipolar Transistor Arrays

Toshiba Semiconductor and Storage 2SA1618-Y(TE85L,F)

Name: 2SA1618-Y(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 2SA1618-Y(TE85L,F)
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SA1618-Y(TE85L,F)

Manufacturer:: Toshiba Semiconductor and Storage

Category:: Bipolar Transistor Arrays

Package:: SC-74A, SOT-753

Datasheet:: 2SA1618-Y(TE85L,F).pdf

Description:: TRANS 2PNP 50V 150MA SMV

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Product details

Overview

2SA1618-Y(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a silicon PNP epitaxial transistor designed for audio-frequency general-purpose amplifier applications. It features V_CEO = −50 V, I_C = −150 mA (max), h_FE = 120–240 (Y-class), f_T = 80 MHz (typ.), and C_ob = 4 pF (typ.), enabling use in dual-channel low-noise preamplifier stages.

For engineers reviewing the 2SA1618-Y(TE85L,F) datasheet, 2SA1618-Y(TE85L,F) pinout, 2SA1618-Y(TE85L,F) application, or 2SA1618-Y(TE85L,F) equivalent, key selection criteria include guaranteed h_FE linearity (0.95 typ.), complementary pairing with 2SC4207, dual-transistor configuration in 2-3L1A package, and −50 V breakdown ratings suitable for Class-A/B audio output buffering.

Technical Context

This dual PNP transistor operates in linear amplification mode with fixed-emitter biasing topology. Its high h_FE linearity across I_C = −0.1 mA to −2 mA ensures consistent gain stability in low-level signal conditioning, while the 80 MHz f_T supports wideband audio response up to 20 kHz with margin.

The device shares common collector-base and emitter-base terminals per channel (Q1/Q2), with absolute maximum ratings defined for both transistors simultaneously. Thermal derating applies above T_j = 125 °C (Note 2), and total power dissipation is limited to 300 mW under specified ambient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−50 V: Maximum safe collector-emitter reverse voltage before breakdown in common-emitter configuration.
I_C (max)	−150 mA: Continuous DC collector current limit per transistor; defines small-signal output drive capability.
h_FE	120–240 (Y-class): Guaranteed DC current gain range at V_CE = −6 V, I_C = −2 mA; enables predictable bias design.
f_T	80 MHz (typ.): Transition frequency at V_CE = −10 V, I_C = −1 mA; confirms suitability for full-audio-band amplification.
C_ob	4 pF (typ.): Collector-base capacitance at V_CB = −10 V; impacts high-frequency stability and Miller effect in CE stages.
V_CE(sat)	−0.1 V (typ.) at I_C = −100 mA, I_B = −10 mA: Low saturation voltage enables efficient Class-A operation with minimal voltage headroom loss.

Pinout & Package

Package: 2-3L1A - small-outline dual-transistor package with 6-pin leadframe, surface-mount compatible, weight 0.014 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1 (Q1 E)	Emitter of Transistor Q1	Common reference node for first transistor; connects to ground or bias network in single-supply designs.
2 (Q1 B)	Base of Transistor Q1	Input control terminal for Q1; requires current-limited drive to maintain linear h_FE operation.
3 (Q1 C)	Collector of Transistor Q1	Output node for Q1; connects to load resistor or next stage; rated for −50 V reverse bias.
4 (Q2 C)	Collector of Transistor Q2	Output node for second transistor; electrically isolated from Q1 collector but shares thermal path.
5 (Q2 B)	Base of Transistor Q2	Independent input for Q2; allows differential or push-pull configuration without inter-channel coupling.
6 (Q2 E)	Emitter of Transistor Q2	Second emitter terminal; may be tied to Q1 emitter for matched biasing or kept separate for independent operation.

Key Features

Feature	Design Value
High h_FE linearity	h_FE(−0.1 mA)/h_FE(−2 mA) = 0.95 (typ.): Ensures uniform gain across operating current range, reducing harmonic distortion in preamp stages.
Complementary pairing	Specified as complementary to 2SC4207 (NPN): Enables direct substitution in push-pull, differential pair, or phase-splitter circuits without redesign.
Dual-transistor integration	Two matched PNP transistors in single 2-3L1A package: Reduces PCB area by ~40% vs. discrete SOT-363 devices and improves thermal tracking.
Low C_ob	4 pF (typ.): Minimizes capacitive loading on preceding stage and improves high-frequency open-loop gain stability.

Applications

Audio Preamp Stage	Push-Pull Output Driver
Use Scenario: Low-noise voltage amplification in microphone preamplifiers and instrument input buffers. IC Role / Device Role / Timing Role: PNP transistor configured in common-emitter topology for signal inversion and gain. Use Value: High h_FE linearity (0.95 typ.) maintains THD < 0.5% at 1 kHz, while −50 V V_CEO supports ±24 V rail operation.	Use Scenario: Complementary Class-B output stage in portable audio amplifiers driving 8 Ω loads. IC Role / Device Role / Timing Role: Upper-leg PNP switch in push-pull pair, paired with 2SC4207 NPN lower leg. Use Value: Matched h_FE range (120–240) and identical package thermal resistance enable symmetrical crossover behavior and reduced even-order harmonics.
Differential Amplifier Core	DC-Coupled Signal Inverter
Use Scenario: Input stage of op-amp-based active filters requiring matched transistor pairs. IC Role / Device Role / Timing Role: Dual PNP elements forming emitter-coupled pair with shared current source. Use Value: Tight h_FE tolerance (Y-class) and common-package thermal coupling minimize input offset drift (< 2 µV/°C).	Use Scenario: Polarity inversion in analog signal routing for balanced line drivers or level-shifting networks. IC Role / Device Role / Timing Role: Single-transistor common-emitter inverter with fixed bias and resistive load. Use Value: −0.1 V V_CE(sat) (typ.) ensures >95% signal swing utilization in ±12 V systems with minimal headroom loss.

Audio Preamp Stage

Push-Pull Output Driver

Use Scenario: Low-noise voltage amplification in microphone preamplifiers and instrument input buffers.

IC Role / Device Role / Timing Role: PNP transistor configured in common-emitter topology for signal inversion and gain.

Use Value: High h_FE linearity (0.95 typ.) maintains THD < 0.5% at 1 kHz, while −50 V V_CEO supports ±24 V rail operation.

Use Scenario: Complementary Class-B output stage in portable audio amplifiers driving 8 Ω loads.

IC Role / Device Role / Timing Role: Upper-leg PNP switch in push-pull pair, paired with 2SC4207 NPN lower leg.

Use Value: Matched h_FE range (120–240) and identical package thermal resistance enable symmetrical crossover behavior and reduced even-order harmonics.

Differential Amplifier Core

DC-Coupled Signal Inverter

Use Scenario: Input stage of op-amp-based active filters requiring matched transistor pairs.

IC Role / Device Role / Timing Role: Dual PNP elements forming emitter-coupled pair with shared current source.

Use Value: Tight h_FE tolerance (Y-class) and common-package thermal coupling minimize input offset drift (< 2 µV/°C).

Use Scenario: Polarity inversion in analog signal routing for balanced line drivers or level-shifting networks.

IC Role / Device Role / Timing Role: Single-transistor common-emitter inverter with fixed bias and resistive load.

Use Value: −0.1 V V_CE(sat) (typ.) ensures >95% signal swing utilization in ±12 V systems with minimal headroom loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP general-purpose amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2SA1037(TE85L,F)	Lower V_CEO (−30 V), higher h_FE (200–400), same 2-3L1A package	Not suitable for ±24 V rails; better for low-voltage portable audio where gain consistency is critical	Select when supply voltage ≤ ±15 V and h_FE > 300 required; verify thermal limits at I_C > −100 mA
BC856B,215	Single PNP, SOT-363 package, V_CEO = −65 V, h_FE = 220–475, no dual integration	Requires two devices and extra layout area; lacks matched thermal tracking between transistors	Choose when board space permits discrete placement and individual transistor replacement is preferred over dual integration

Compared with 2SA1618-Y(TE85L,F), 2SA1037 offers higher gain but reduced voltage margin, while BC856B provides greater breakdown rating and flexibility at the cost of layout efficiency and thermal matching-making 2SA1618-Y(TE85L,F) optimal for compact, thermally stable dual-amplifier designs within −50 V constraints.

Availability

2SA1618-Y(TE85L,F) is available at Aetrix Electronics and suitable for audio preamplifiers, push-pull output stages, and differential amplifier cores requiring stable component supply and long-term industrial availability.

Supply support for 2SA1618-Y(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, efficiency, and automotive-grade quality.

The 2SA1618-Y(TE85L,F) belongs to Toshiba's legacy audio-frequency bipolar transistor family, engineered specifically for high-fidelity analog signal amplification in consumer and professional audio equipment.

FAQ

What is the guaranteed h_FE range for 2SA1618-Y(TE85L,F)?

The 2SA1618-Y(TE85L,F) is Y-class rated, guaranteeing h_FE = 120 to 240 at V_CE = −6 V and I_C = −2 mA. This classification is marked on the device body and confirmed in Toshiba's official electrical characteristics table. The 2SA1618-Y(TE85L,F) does not meet the GR-class (200–400) specification. Designers should use the Y-range for bias calculations and gain-dependent feedback loop stability analysis.

Is 2SA1618-Y(TE85L,F) pin-compatible with 2SA1618-GR(TE85L,F)?

Yes, 2SA1618-Y(TE85L,F) and 2SA1618-GR(TE85L,F) share identical 2-3L1A package, pinout, and absolute maximum ratings. The only difference is h_FE classification: Y (120–240) vs. GR (200–400). No PCB layout change is needed when substituting between these variants, but circuit performance-especially quiescent current and gain stability-must be re-verified due to the h_FE distribution shift in the 2SA1618-Y(TE85L,F).

Can 2SA1618-Y(TE85L,F) be used in place of 2SC4207?

No-2SA1618-Y(TE85L,F) is a PNP transistor, while 2SC4207 is an NPN device; they are complementary, not interchangeable. The 2SA1618-Y(TE85L,F) is explicitly designated as complementary to 2SC4207 for push-pull or differential pair configurations. Substituting 2SA1618-Y(TE85L,F) for 2SC4207 would invert polarity and likely cause circuit failure. Always verify polarity, pinout, and bias direction before replacement.

What is the junction temperature limit for continuous operation of 2SA1618-Y(TE85L,F)?

The 2SA1618-Y(TE85L,F) has two junction temperature limits depending on ordering suffix: T_j = 150 °C for LF(T)-suffixed variants (not applicable here), and T_j = 125 °C for all other versions including 2SA1618-Y(TE85L,F). Derating begins above 25 °C ambient, and total power dissipation must remain ≤300 mW. Thermal design must ensure case-to-ambient resistance keeps T_j ≤125 °C under worst-case I_C/V_CE conditions.

Does 2SA1618-Y(TE85L,F) meet RoHS requirements?

Yes, 2SA1618-Y(TE85L,F) complies with EU RoHS Directive 2011/65/EU. Toshiba confirms lead-free termination and halogen-free molding compound for this part number. Full compliance documentation-including test reports and substance declarations-is available through Toshiba's official environmental portal. For production use, Aetrix Electronics provides RoHS-certified lot traceability and material declarations upon request for 2SA1618-Y(TE85L,F).

2SA1618-Y(TE85L,F) Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: -

Package/Case:: SC-74A, SOT-753

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: 2 PNP (Dual) Matched Pair, Common Emitter

Current - Collector (Ic) (Max):: 150mA

Voltage - Collector Emitter Breakdown (Max):: 50V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 120 @ 2mA, 6V

Power - Max:: 300mW

Frequency - Transition:: 80MHz

Operating Temperature:: 125°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SMV

2SA1618-Y(TE85L,F) FAQ

1.How can I place an order for 2SA1618-Y(TE85L,F) through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SA1618-Y(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SA1618-Y(TE85L,F) reliable?

The price and inventory of 2SA1618-Y(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SA1618-Y(TE85L,F) is usually 5 days.

3.What payment methods are accepted for 2SA1618-Y(TE85L,F)?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SA1618-Y(TE85L,F) transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SA1618-Y(TE85L,F)?

2SA1618-Y(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SA1618-Y(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SA1618-Y(TE85L,F)?

For technical support, including 2SA1618-Y(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SA1618-Y(TE85L,F) requirements.

6.How does Aetrix verify that 2SA1618-Y(TE85L,F) is sourced from the original manufacturer or authorized distributors?

All 2SA1618-Y(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SA1618-Y(TE85L,F) meets industry standards.

7.What is the process for return or replacement of 2SA1618-Y(TE85L,F)?

All 2SA1618-Y(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with 2SA1618-Y(TE85L,F), returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SA1618-Y(TE85L,F) part is unused and in its original packaging.

Return procedure for 2SA1618-Y(TE85L,F):

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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