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onsemi BC847BDW1T1G
- Part No.:
- BC847BDW1T1G
- Manufacturer:
- onsemi
- Category:
- Bipolar Transistor Arrays
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
BC847BDW1T1G.pdf
- Description:
- TRANS 2NPN 45V 100MA SC88/SC70
- Quantity:
- Payment:
- Shipping:
Inventory:42,133
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Product details
Overview
BC847BDW1T1G from onsemi is a dual NPN general-purpose transistor pair in a single SOT-363 (SC-88) surface-mount package, rated for 45 V VCEO, 100 mA IC, and 380 mW total device dissipation at 25°C. It delivers DC current gain (hFE) of 200–450 at IC = 10 mA and VCE = 5 V, with fT = 100 MHz, enabling use in low-power amplification and switching circuits in space-constrained industrial and automotive modules.
For engineers reviewing the BC847BDW1T1G datasheet, pinout, applications, or equivalent options, key selection criteria include its dual-NPN configuration, AEC-Q101 qualification, Pb-free RoHS-compliant SOT-363 footprint, and verified performance across −55°C to +150°C junction temperature range.
Technical Context
The BC847BDW1T1G integrates two matched NPN transistors sharing a common thermal environment in a monolithic SOT-363 die. Its electrical characteristics are specified per transistor, with independent collector-emitter breakdown (V(BR)CEO = 45 V), base-emitter voltage (VBE(on) = 580–700 mV at IC = 2 mA), and saturation behavior (VCE(sat) ≤ 0.25 V at IC/IB = 20).
Thermal design is constrained by RJA = 328°C/W on FR-5 board, requiring derating above 25°C at 3.0 mW/°C. The device operates within a junction temperature range of −55°C to +150°C and supports automotive-grade reliability via AEC-Q101 qualification and PPAP capability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 45 V - Maximum allowable collector-emitter voltage before breakdown; defines safe operating voltage headroom in linear or switching applications. |
| IC | 100 mA - Continuous collector current per transistor; sets upper limit for load-driving capability in amplifier or switch configurations. |
| hFE | 200–450 - DC current gain at IC = 10 mA, VCE = 5 V; determines required base drive and signal amplification factor. |
| fT | 100 MHz - Transition frequency at IC = 10 mA, VCE = 5 V; indicates usable bandwidth for small-signal amplification up to ~10 MHz practical gain. |
| VCE(sat) | ≤0.25 V - Collector-emitter saturation voltage at IC = 10 mA, IB = 0.5 mA; defines conduction loss and power dissipation in saturated switching mode. |
| RJA | 328°C/W - Junction-to-ambient thermal resistance on FR-5 board; governs maximum power handling and heatsinking requirements. |
| TJ Range | −55°C to +150°C - Validated operating junction temperature range; enables deployment in under-hood automotive and industrial environments. |
Pinout & Package
SOT-363 (SC-88) 6-pin surface-mount package, 2.00 × 1.25 × 0.90 mm body size, 0.65 mm lead pitch, Pb-free and RoHS compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter 2 | Emitter terminal of second NPN transistor; connects to local ground or emitter resistor in common-emitter configuration. |
| 2 | Base 2 | Base terminal of second NPN transistor; controls conduction of Q2 via external bias network or digital logic interface. |
| 3 | Collector 1 | Collector terminal of first NPN transistor; carries amplified/sourced load current; requires appropriate pull-up or supply connection. |
| 4 | Emitter 1 | Emitter terminal of first NPN transistor; provides reference node for Q1 biasing and current sensing. |
| 5 | Base 1 | Base terminal of first NPN transistor; accepts input signal or drive current to activate Q1 independently of Q2. |
| 6 | Collector 2 | Collector terminal of second NPN transistor; enables dual-channel operation without inter-device coupling beyond shared thermal mass. |
Key Features
| Feature | Design Value |
|---|---|
| Dual NPN topology | Two electrically isolated, thermally coupled NPN transistors in one compact SOT-363 package-reduces PCB area and matching drift vs. discrete solutions. |
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS subsystems requiring high-reliability stress testing. |
| Pb-free & RoHS compliant | Fully compliant with EU RoHS Directive 2011/65/EU and halogen-free/BFR-free material requirements for environmentally regulated production. |
| Wide temperature operation | Guaranteed functionality from −55°C to +150°C junction temperature-supports industrial automation, power supplies, and under-dash modules. |
| Matched hFE and VBE | Transistors exhibit tightly controlled parameter spread due to monolithic integration-improves consistency in differential pairs or current mirrors. |
Applications
| Signal Amplification | Level Translation |
|---|---|
|
Use Scenario: Amplifying low-level analog sensor outputs (e.g., thermistor, photodiode) in battery-powered IoT nodes. IC Role / Device Role / Timing Role: Each transistor operates in common-emitter configuration to provide voltage gain >100 with minimal quiescent current. Use Value: Enables high-gain, low-noise preamplification (NF = 10 dB) while consuming <100 µA per stage-extending battery life in portable devices. |
Use Scenario: Converting 1.8 V logic signals to 5 V or 3.3 V levels for interfacing microcontrollers with legacy peripherals. IC Role / Device Role / Timing Role: Configured as saturated switch with base resistor network to translate logic thresholds and drive higher-voltage loads. Use Value: Delivers fast, reliable level shifting with VCE(sat) ≤ 0.25 V and propagation delay <10 ns-preserving timing integrity in mixed-voltage systems. |
| LED Driver | Current Mirror |
|
Use Scenario: Driving multiple indicator LEDs in automotive dashboard clusters where space and thermal management are critical. IC Role / Device Role / Timing Role: One transistor acts as constant-current sink for LED string; second provides enable/disable control or fault feedback path. Use Value: Supports precise 20 mA LED current regulation with <±5% variation across temperature-ensuring consistent brightness and longevity. |
Use Scenario: Building matched current sources in precision analog front-ends for ADC biasing or sensor excitation. IC Role / Device Role / Timing Role: Transistors configured as diode-connected and output stages to replicate reference current with minimal mismatch. Use Value: Achieves <1% current ratio error over −40°C to +125°C-enabling accurate current-mode signal conditioning in instrumentation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual-NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC847CDW1T1G | Higher hFE range (420–800 vs. 200–450); same VCEO, IC, package, and thermal specs. | Better suited for low-base-drive applications like high-gain preamps or low-current switches where gain stability is critical. | Select BC847CDW1T1G when circuit requires >400 minimum hFE at 2 mA; otherwise BC847BDW1T1G offers tighter gain distribution for matched-pair designs. |
| MBT3904DW1T1G | Same dual-NPN SOT-363 form factor but lower VCEO (40 V), higher VBE(on) (max 770 mV), and wider hFE spread (100–300). | Targeted at cost-sensitive consumer electronics; not AEC-Q101 qualified and lacks automotive process controls. | Choose MBT3904DW1T1G only for non-automotive, non-industrial applications where qualification and tight gain matching are not required. |
Compared with BC847CDW1T1G and MBT3904DW1T1G, the BC847BDW1T1G provides optimal balance of gain consistency, automotive qualification, and thermal robustness-making it preferred for safety-critical or thermally demanding dual-transistor functions.
Availability
BC847BDW1T1G is available at Aetrix Electronics and suitable for industrial motor control, automotive lighting modules, and portable medical instrumentation requiring stable component supply and long-term lifecycle support.
Supply support for BC847BDW1T1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Semiconductor Components Industries, LLC) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, and IoT applications.
The BC847BDW1T1G belongs to onsemi's BC846/BC847/BC848 dual-transistor family, engineered for high-reliability general-purpose amplification and switching in space-constrained, thermally demanding environments.
FAQ
What is the maximum junction temperature rating for BC847BDW1T1G?
The BC847BDW1T1G has a specified junction and storage temperature range of −55°C to +150°C. This rating is validated per JEDEC standards and applies to both continuous operation and transient thermal conditions, supporting use in under-hood automotive and high-ambient industrial settings where thermal margins are critical. The BC847BDW1T1G must be operated within this envelope to ensure reliability and parametric stability.
Is BC847BDW1T1G pin-compatible with BC847CDW1T1G?
Yes, the BC847BDW1T1G and BC847CDW1T1G share identical SOT-363 packaging, pinout (Style 1: E2-B2-C1-E1-B1-C2), and mechanical dimensions. Both parts are drop-in replacements at the board level, differing only in DC current gain binning-BC847BDW1T1G (hFE = 200–450) versus BC847CDW1T1G (hFE = 420–800). No PCB layout changes are required when substituting between these variants.
Does BC847BDW1T1G meet AEC-Q101 requirements?
Yes, the BC847BDW1T1G is explicitly AEC-Q101 qualified and PPAP capable, as confirmed in the official onsemi datasheet (Rev. 14, June 2024). This qualification covers stress tests including HTSL, TC, AC, and mechanical shock, validating its suitability for automotive applications such as body control modules, lighting drivers, and sensor interfaces where failure modes must be rigorously controlled.
What is the typical noise figure of BC847BDW1T1G and under what conditions is it measured?
The BC847BDW1T1G has a typical noise figure (NF) of 10 dB, measured at IC = 0.2 mA, VCE = 5.0 V, source resistance RS = 2.0 kΩ, frequency f = 1.0 kHz, and bandwidth BW = 200 Hz. This value reflects its suitability for low-noise preamplifier stages in sensor signal chains where preserving weak analog signals is essential. The BC847BDW1T1G maintains this NF performance across its full operating temperature range.
Can BC847BDW1T1G be used in linear amplifier configurations?
Yes, the BC847BDW1T1G is designed for general-purpose amplifier applications, with verified linearity in its active region up to IC = 100 mA and VCE = 10 V. Its hFE stability across collector current (see Figures 12–13), low VCE(sat), and 100 MHz fT support Class-A and Class-AB small-signal amplification. When biased correctly, the BC847BDW1T1G delivers predictable gain and distortion performance suitable for audio preamps and sensor conditioning circuits.
BC847BDW1T1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual)
- Current - Collector (Ic) (Max):
- 100mA
- Voltage - Collector Emitter Breakdown (Max):
- 45V
- Vce Saturation (Max) @ Ib, Ic:
- 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max):
- 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 2mA, 5V
- Power - Max:
- 380mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-88/SC70-6/SOT-363
BC847BDW1T1G FAQ
1.How can I place an order for BC847BDW1T1G through Aetrix?
Please submit a Request for Quotation (RFQ) for BC847BDW1T1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for BC847BDW1T1G reliable?
The price and inventory of BC847BDW1T1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for BC847BDW1T1G is usually 5 days.
3.What payment methods are accepted for BC847BDW1T1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for BC847BDW1T1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for BC847BDW1T1G?
BC847BDW1T1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your BC847BDW1T1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for BC847BDW1T1G?
For technical support, including BC847BDW1T1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your BC847BDW1T1G requirements.
6.How does Aetrix verify that BC847BDW1T1G is sourced from the original manufacturer or authorized distributors?
All BC847BDW1T1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that BC847BDW1T1G meets industry standards.
7.What is the process for return or replacement of BC847BDW1T1G?
All BC847BDW1T1G units undergo pre-shipment inspection (PSI). If there is an issue with BC847BDW1T1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The BC847BDW1T1G part is unused and in its original packaging.
Return procedure for BC847BDW1T1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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