Toshiba Semiconductor and Storage 2SC4207-Y(TE85L,F)
- Part No.:
- 2SC4207-Y(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Category:
- Bipolar Transistor Arrays
- Package:
- SC-74A, SOT-753
- Datasheet:
-
2SC4207-Y(TE85L,F).pdf
- Description:
- TRANS 2NPN 50V 150MA SMV
- Quantity:
- Payment:

- Shipping:

Inventory:38,058
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2SC4207-Y(TE85L,F) from Toshiba Electronic Devices & Storage Corporation is a silicon NPN epitaxial transistor in a small dual-package configuration, designed for audio-frequency general-purpose amplifier applications. It delivers VCEO = 50 V, IC = 150 mA (max), hFE = 120–240 (Y-class), fT = 80 MHz (min), and VCE(sat) = 0.1–0.25 V at IC = 100 mA/IB = 10 mA - enabling use in low-distortion preamplifier stages and driver circuits.
For engineers reviewing the 2SC4207-Y(TE85L,F) datasheet, 2SC4207-Y(TE85L,F) pinout, 2SC4207-Y(TE85L,F) application, or 2SC4207-Y(TE85L,F) equivalent, key selection considerations include its Y-class hFE binning, complementary pairing with 2SA1618, dual-transistor topology in 2-3L1A package, and suitability for linear audio amplification where hFE linearity (0.95 typ.) and low Cob (2–3.5 pF) are critical.
Technical Context
This dual NPN transistor uses Toshiba's PCT (Planar Complementary Transistor) process to achieve high-voltage capability and stable DC current gain across operating conditions. Its hFE linearity ratio hFE(IC = 0.1 mA)/hFE(IC = 2 mA) = 0.95 (typ.) supports consistent small-signal amplification across bias points, while fT ≥ 80 MHz enables operation into upper audio and low-RF bands.
The device shares common absolute maximum ratings between both transistors (Q1/Q2), including VCBO = 60 V, Tj = 150°C (for LF(T)-suffixed variants), and total PC = 300 mW. Its low Cob (2–3.5 pF) and tight VCE(sat) tolerance support efficient Class-A/AB output stage design without excessive thermal derating.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 50 V - supports rail voltages up to ±24 V in dual-supply audio amplifiers without breakdown risk |
| IC (max) | 150 mA - sufficient for driving 8 Ω loads at ≤1 W in single-ended output stages |
| hFE range | 120–240 (Y-class) - ensures predictable bias stability in discrete gain blocks |
| fT | ≥80 MHz - preserves phase margin and bandwidth in feedback-coupled preamp designs |
| VCE(sat) | 0.1–0.25 V @ IC=100 mA/IB=10 mA - minimizes voltage drop and self-heating in saturated switching or emitter-follower roles |
| Cob | 2–3.5 pF @ VCB=10 V - reduces Miller effect and high-frequency roll-off in common-emitter configurations |
| Tj (max) | 150°C - allows operation in enclosed enclosures with moderate heatsinking |
Pinout & Package
2SC4207-Y(TE85L,F) is housed in Toshiba's 2-3L1A small-outline dual-transistor package (JEITA-compliant, weight ≈ 0.014 g). The package integrates two identical NPN transistors sharing no internal connection; pin assignment is standardized per top-view marking orientation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Emitter 1 (E1) | Current sink for Q1 | Primary path for collector current in first transistor; tied to local ground reference in emitter-follower or common-emitter topologies |
| Base 1 (B1) | Control input for Q1 | Receives bias current to set Q1 operating point; requires series resistor to limit IB ≤ 30 mA |
| Collector 1 (C1) | Current source for Q1 | Connects to load or next stage; rated for 60 V VCBO, 50 V VCEO |
| Emitter 2 (E2) | Current sink for Q2 | Independent emitter node for second transistor; enables dual-channel or push-pull configurations |
| Base 2 (B2) | Control input for Q2 | Electrically isolated from B1; permits independent biasing of each transistor |
| Collector 2 (C2) | Current source for Q2 | Rated identically to C1; supports symmetrical dual-amplifier or differential pair implementations |
Key Features
| Feature | Design Value |
|---|---|
| Y-class hFE binning | Guaranteed 120–240 hFE at VCE = 6 V, IC = 2 mA - simplifies bias network design without post-manufacture sorting |
| High hFE linearity | hFE(0.1 mA)/hFE(2 mA) = 0.95 (typ.) - maintains gain consistency across signal amplitude variations in audio preamps |
| Dual-transistor monolithic die | Matched characteristics between Q1 and Q2 - enables precise differential pairs or balanced amplifier stages without external matching |
| Low output capacitance | Cob = 2–3.5 pF - limits high-frequency instability in multi-stage amplifiers with global feedback |
| Complementary pairing | Designed as direct complement to 2SA1618 (PNP) - supports push-pull output stages with matched thermal and gain profiles |
Applications
| Audio Preamp Stage | Discrete Op-Amp Input Pair |
|---|---|
Use Scenario: Low-noise voltage amplification in microphone preamplifiers and instrument DI boxes. IC Role / Device Role / Timing Role: Discrete NPN transistor configured in common-emitter topology to provide 20–40 dB gain before op-amp buffering. Use Value: High hFE linearity and low Cob preserve wideband frequency response and minimize intermodulation distortion below 20 kHz. | Use Scenario: Input differential pair in discrete operational amplifiers for studio-grade analog processing. IC Role / Device Role / Timing Role: Matched dual NPN transistors forming the front-end gain stage with active current mirror load. Use Value: Monolithic matching ensures <1 mV input offset and <0.01% gain error across temperature, critical for precision DC-coupled designs. |
| Class-A Headphone Driver | Push-Pull Output Stage |
Use Scenario: Single-ended Class-A headphone amplifier delivering 50–100 mW into 32 Ω loads. IC Role / Device Role / Timing Role: Emitter-follower output device biased at ~50 mA quiescent current for zero-crossing distortion elimination. Use Value: Low VCE(sat) (0.1 V typ.) and 150 mA IC rating enable efficient power delivery with <0.1% THD+N at full output. | Use Scenario: Complementary push-pull output stage in compact audio power amplifiers (≤2 W). IC Role / Device Role / Timing Role: NPN half of push-pull pair, paired with 2SA1618 PNP device for symmetrical sourcing/sinking. Use Value: Matching VCEO, hFE range, and thermal profile with 2SA1618 minimizes crossover distortion and thermal runaway risk. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SC4081-Y(TE85L,F) | Same 2-3L1A package, identical hFE bin (Y), but lower fT = 50 MHz (vs. 80 MHz) and higher Cob = 4.5 pF | Suitable for sub-10 MHz audio-only designs; less ideal for wideband or RF-coupled stages | Select when cost sensitivity outweighs bandwidth needs and layout space is constrained |
| MPSA18 | TO-92 package, single transistor, hFE = 100–300, fT = 100 MHz, but no dual configuration or guaranteed hFE linearity | Requires two devices and external matching for dual-channel use; lacks monolithic tracking | Choose for prototyping or low-volume builds where TO-92 hand-soldering is preferred over SMT |
Compared with 2SC4207-Y(TE85L,F), 2SC4081-Y offers cost savings at the expense of bandwidth and capacitance control, while MPSA18 provides higher fT but sacrifices dual integration and hFE linearity - making 2SC4207-Y optimal for production audio gear requiring matched performance and SMT reliability.
Availability
2SC4207-Y(TE85L,F) is available at Aetrix Electronics and suitable for audio preamplifier modules, discrete operational amplifier designs, and Class-A headphone driver circuits requiring stable component supply and long-term obsolescence management.
Supply support for 2SC4207-Y(TE85L,F) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and discrete components with emphasis on reliability and industrial longevity.
The 2SC4207 belongs to Toshiba's legacy audio-frequency bipolar transistor family, engineered specifically for high-fidelity analog signal conditioning where gain stability, low noise, and thermal symmetry are essential.
FAQ
What is the hFE classification for 2SC4207-Y(TE85L,F)?
The "Y" suffix in 2SC4207-Y(TE85L,F) denotes the hFE binning range of 120 to 240 at VCE = 6 V and IC = 2 mA. This classification is verified per Toshiba's production test and ensures predictable DC bias behavior in amplifier circuits without requiring manual transistor sorting. The 2SC4207-Y(TE85L,F) does not share hFE ranges with GR or BL variants.
Is 2SC4207-Y(TE85L,F) pin-compatible with other Toshiba dual-transistor packages?
No - 2SC4207-Y(TE85L,F) uses the proprietary 2-3L1A package with six terminals (E1/B1/C1/E2/B2/C2) in a specific top-view layout. It is not pin-compatible with 2SC5366 (2-7J1A) or 2SC4116 (2-7J2A), which differ in lead count, spacing, and terminal order. Always verify mechanical drawings before PCB layout.
Does 2SC4207-Y(TE85L,F) support surface-mount reflow assembly?
Yes - 2SC4207-Y(TE85L,F) is qualified for standard lead-free reflow soldering per JEDEC J-STD-020. Its 2-3L1A package has defined thermal mass and pad layout compatible with IPC-7351B footprint guidelines. Peak reflow temperature must not exceed 260°C for ≤10 seconds to maintain junction integrity.
What is the maximum safe operating collector current for 2SC4207-Y(TE85L,F)?
The absolute maximum collector current for 2SC4207-Y(TE85L,F) is 150 mA per transistor (Q1 or Q2), as specified in Toshiba's Absolute Maximum Ratings table. Continuous operation above 100 mA requires derating based on ambient temperature and PCB copper area; at 25°C, full 150 mA is permitted only if total dissipation remains ≤300 mW and Tj stays ≤150°C.
How does the hFE linearity of 2SC4207-Y(TE85L,F) impact audio performance?
The hFE linearity ratio of 0.95 (typ.) - calculated as hFE at 0.1 mA divided by hFE at 2 mA - indicates minimal gain variation across small-signal operating currents. In 2SC4207-Y(TE85L,F) audio preamp applications, this directly reduces harmonic and intermodulation distortion, especially near signal zero-crossings where bias current shifts most.
2SC4207-Y(TE85L,F) Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Toshiba Semiconductor and Storage
- Series:
- -
- Package/Case:
- SC-74A, SOT-753
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- 2 NPN (Dual) Matched Pair, Common Emitter
- Current - Collector (Ic) (Max):
- 150mA
- Voltage - Collector Emitter Breakdown (Max):
- 50V
- Vce Saturation (Max) @ Ib, Ic:
- 250mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 120 @ 2mA, 6V
- Power - Max:
- 300mW
- Frequency - Transition:
- 80MHz
- Operating Temperature:
- 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SMV
2SC4207-Y(TE85L,F) FAQ
1.How can I place an order for 2SC4207-Y(TE85L,F) through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SC4207-Y(TE85L,F) on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SC4207-Y(TE85L,F) reliable?
The price and inventory of 2SC4207-Y(TE85L,F) are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SC4207-Y(TE85L,F) is usually 5 days.
3.What payment methods are accepted for 2SC4207-Y(TE85L,F)?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SC4207-Y(TE85L,F) transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SC4207-Y(TE85L,F)?
2SC4207-Y(TE85L,F) orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SC4207-Y(TE85L,F) order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SC4207-Y(TE85L,F)?
For technical support, including 2SC4207-Y(TE85L,F) datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SC4207-Y(TE85L,F) requirements.
6.How does Aetrix verify that 2SC4207-Y(TE85L,F) is sourced from the original manufacturer or authorized distributors?
All 2SC4207-Y(TE85L,F) products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SC4207-Y(TE85L,F) meets industry standards.
7.What is the process for return or replacement of 2SC4207-Y(TE85L,F)?
All 2SC4207-Y(TE85L,F) units undergo pre-shipment inspection (PSI). If there is an issue with 2SC4207-Y(TE85L,F), returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SC4207-Y(TE85L,F) part is unused and in its original packaging.
Return procedure for 2SC4207-Y(TE85L,F):
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2SC4207-Y(TE85L,F) Tags

-
MBT3946DW1T1G
onsemi

-
BC846BPDW1T1G
onsemi

-
MBT2222ADW1T1G
onsemi

-
BC847BDW1T1G
onsemi

-
DMMT5401-7-F
Diodes Incorporated

-
DMMT5551-7-F
Diodes Incorporated

-
DMMT3904W-7-F
Diodes Incorporated

-
DMMT3906W-7-F
Diodes Incorporated

-
FMB3904
onsemi

-
FMB2222A
onsemi

-
ULQ2003D1013TR
STMicroelectronics

-
ZXTD4591E6TA
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

