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Vishay General Semiconductor - Diodes Division 3KASMC11AHE3_B/I

Part No.:
3KASMC11AHE3_B/I
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
Aetrix3KASMC11AHE3_B/I.pdf
Description:
TVS DIODE 11VWM 18.2VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,412

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Product details

Overview

3KASMC11AHE3_B/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) in SMC (DO-214AB) package, designed for clamping inductive switching transients and ESD events. It features 12.2 V minimum breakdown voltage (VBR), 11 V stand-off voltage (VWM), 3000 W peak pulse power (10/1000 μs), 185 °C maximum junction temperature, and AEC-Q101 qualification - deployed in automotive sensor signal lines and power MOSFET gate protection.

For engineers reviewing the 3KASMC11AHE3_B/I datasheet, 3KASMC11AHE3_B/I pinout, 3KASMC11AHE3_B/I application, or 3KASMC11AHE3_B/I equivalent, key selection criteria include unidirectional clamping behavior, 17.0 V maximum clamping voltage at 165 A IPPM, thermal resistance (RθJA = 77.5 °C/W), RoHS-compliant matte tin plating, and J-STD-020 MSL Level 1 rating.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology to achieve stable clamping under high-temperature operation up to 185 °C junction temperature and low incremental surge resistance. Its unidirectional polarity enables precise reverse-biased overvoltage protection on DC rails and signal paths without forward conduction interference.

The device delivers 3000 W peak pulse power with 10/1000 μs waveform while maintaining 17.0 V clamping voltage at 165 A peak current, and exhibits 0.072 %/°C temperature coefficient of VBR, enabling predictable voltage threshold shift across automotive operating ranges.

Key Specifications

Parameter Value and Actual Design Meaning
VWM 11 V - Maximum continuous reverse working voltage before leakage exceeds 5 μA; defines safe DC operating margin.
VBR (min) 12.2 V at 1 mA - Minimum breakdown voltage ensures reliable triggering above normal system voltage.
VC @ IPPM 17.0 V at 165 A - Clamping voltage during 3000 W transient limits stress on downstream ICs and MOSFETs.
PPPM 3000 W (10/1000 μs) - Peak surge energy handling capacity for inductive load switching and ISO 7637-2 pulses.
TJ max +185 °C - Enables use in under-hood automotive environments and high-power industrial PCBs without derating.
RθJA 77.5 °C/W - Thermal resistance determines required copper area and airflow for sustained 6.0 W power dissipation.
AEC-Q101 Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD robustness.

Pinout & Package

Package: SMC (DO-214AB), surface-mount, cathode indicated by color band. Dimensions: 6.22 mm × 5.59 mm × 2.46 mm (L × W × H). Matte tin-plated leads, J-STD-002 solderable, MSL Level 1 (260 °C peak).

Pin/Terminal Circuit Role Design Meaning
Anode Current entry terminal during clamping Connected to protected line (e.g., sensor output or MOSFET source); conducts surge current to ground path.
Cathode Current exit terminal during clamping Connected to ground or low-impedance return; establishes unidirectional clamping direction relative to Anode.

Key Features

Feature Design Value
Junction passivation Optimized anisotropic rectifier process ensures stable VBR drift ≤ ±5 % over 1000 hrs at 150 °C.
Clamping performance 17.0 V clamping at 165 A enables <10 V overvoltage margin for 5 V or 12 V logic/MOSFET gate circuits.
Thermal stability 185 °C TJ max supports operation in engine control units and motor drive inverters without thermal shutdown.
Automotive compliance AEC-Q101 qualification covers HTGB, HTRB, and temperature cycling per automotive electronics reliability standards.
Manufacturing readiness RoHS-compliant, halogen-free option available (HM3 suffix), JESD201 Class 2 whisker tested, tape-and-reel delivery (3500 pcs/reel).

Applications

Automotive Sensor Protection Industrial Motor Drive Gate Clamp

Use Scenario: Protecting analog output lines of pressure, temperature, and position sensors in engine control modules exposed to load dump and alternator ripple.

IC Role / Device Role / Timing Role: Unidirectional TVS clamping element placed between sensor output and microcontroller ADC input.

Use Value: Limits transient voltage to ≤17.0 V during 100 V/50 ms load dump events, preserving 12-bit ADC accuracy and preventing latch-up.

Use Scenario: Suppressing Miller-induced voltage spikes on gate-source terminals of 600 V IGBTs in HVAC inverter drives.

IC Role / Device Role / Timing Role: Fast-response clamping diode connected directly across gate and emitter to limit dV/dt stress.

Use Value: Responds in <1 ps to clamp gate voltage overshoot below 20 V, preventing false turn-on and gate oxide degradation.

Telecom Power Rail Protection Computer PSU Hold-Up Circuit Clamp

Use Scenario: Safeguarding 48 V DC input rails in PoE-powered switches against lightning-induced surges on Ethernet cables.

IC Role / Device Role / Timing Role: Primary-level TVS on secondary-side DC bus upstream of DC-DC converters.

Use Value: Absorbs 3000 W surge energy without failure, maintaining rail integrity during IEC 61000-4-5 4 kV combo wave tests.

Use Scenario: Preventing overvoltage damage to hold-up capacitors and controller ICs during AC line dropout in ATX PSUs.

IC Role / Device Role / Timing Role: Standby clamping device across bulk capacitor bank to absorb inrush and flyback energy.

Use Value: Clamps to 17.0 V during 100 A surge, reducing capacitor stress and extending lifetime beyond 10,000 cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ11A-E3/5AT (Vishay) Same SMC package, lower PPPM (400 W), higher VC (18.2 V at 22.5 A), non-AEC-Q101 Targeted at consumer/commercial grade; insufficient for automotive load dump immunity Select when cost sensitivity outweighs automotive reliability requirements and surge energy is ≤400 W
1.5KE11A (ON Semiconductor) Through-hole DO-201 package, same VWM/VBR, 1500 W PPPM, no AEC-Q101, higher RθJA (100 °C/W) Requires PCB real estate for axial lead mounting; unsuitable for automated SMT assembly Choose only for legacy through-hole designs where rework to SMT is not feasible

Compared with SMAJ11A-E3/5AT and 1.5KE11A, the 3KASMC11AHE3_B/I delivers triple the surge power handling, automotive-grade qualification, and superior thermal performance in a compact SMT footprint - making it the sole choice for new AEC-Q101-compliant designs requiring ≥3000 W clamping.

Availability

3KASMC11AHE3_B/I is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial motor drive gate protection, and telecom power rail surge suppression requiring stable component supply, full traceability, and long-term lifecycle support.

Supply support for 3KASMC11AHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and passive components for demanding industrial and automotive applications.

The 3KASMCxxA family was engineered specifically for AEC-Q101-compliant transient suppression in harsh-environment electronics, emphasizing thermal robustness, low clamping voltage, and repeatable surge endurance.

FAQ

What is the clamping voltage of the 3KASMC11AHE3_B/I at its rated peak pulse current?

The 3KASMC11AHE3_B/I has a maximum clamping voltage (VC) of 17.0 V at 165 A peak pulse current (IPPM) under 10/1000 μs waveform conditions. This value is measured per ANSI/IEEE C62.35 and guarantees that downstream circuitry remains within safe voltage margins during standardized surge events. The 3KASMC11AHE3_B/I achieves this with low incremental surge resistance, ensuring minimal voltage overshoot during fast transients.

Is the 3KASMC11AHE3_B/I qualified for automotive applications?

Yes, the 3KASMC11AHE3_B/I is AEC-Q101 qualified, as confirmed by Vishay's official documentation and ordering code suffix HE3. It meets stress test requirements including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling - all validated for under-hood and powertrain applications. The 3KASMC11AHE3_B/I also complies with JESD201 Class 2 whisker testing and RoHS directives.

What is the package type and mounting specification for the 3KASMC11AHE3_B/I?

The 3KASMC11AHE3_B/I uses the SMC (DO-214AB) surface-mount package with dimensions 6.22 mm × 5.59 mm × 2.46 mm. It features matte tin-plated leads compliant with J-STD-002 and JESD22-B102, and is rated MSL Level 1 per J-STD-020 with a maximum peak reflow temperature of 260 °C. The 3KASMC11AHE3_B/I requires the recommended pad layout per Vishay document 88480 for optimal thermal and mechanical reliability.

How does the 3KASMC11AHE3_B/I differ from the SMAJ11A series in surge capability?

The 3KASMC11AHE3_B/I delivers 3000 W peak pulse power (10/1000 μs), whereas the SMAJ11A offers only 400 W - a 7.5× higher energy absorption capacity. The 3KASMC11AHE3_B/I also achieves lower clamping voltage (17.0 V vs. 18.2 V) at higher current (165 A vs. 22.5 A) and includes AEC-Q101 qualification, which the SMAJ11A lacks. These differences make the 3KASMC11AHE3_B/I suitable for ISO 7637-2 and IEC 61000-4-5 Level 4 compliance where the SMAJ11A cannot meet requirements.

What is the maximum junction temperature and thermal resistance of the 3KASMC11AHE3_B/I?

The 3KASMC11AHE3_B/I has a maximum junction temperature (TJ) of +185 °C and a typical junction-to-ambient thermal resistance (RθJA) of 77.5 °C/W when mounted on the minimum recommended pad layout. This allows sustained operation in high-temperature environments such as engine compartments or enclosed industrial enclosures. The 3KASMC11AHE3_B/I's thermal design supports 6.0 W steady-state power dissipation at lead temperature (TL) of 75 °C, per Figure 6 in Vishay document 88480.

3KASMC11AHE3_B/I Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
11V
Voltage - Breakdown (Min):
12.2V
Voltage - Clamping (Max) @ Ipp:
18.2V
Current - Peak Pulse (10/1000µs):
165A
Power - Peak Pulse:
3000W (3kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMC)

3KASMC11AHE3_B/I FAQ

1.How can I place an order for 3KASMC11AHE3_B/I through Aetrix?

Please submit a Request for Quotation (RFQ) for 3KASMC11AHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 3KASMC11AHE3_B/I reliable?

The price and inventory of 3KASMC11AHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC11AHE3_B/I is usually 5 days.

3.What payment methods are accepted for 3KASMC11AHE3_B/I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC11AHE3_B/I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 3KASMC11AHE3_B/I?

3KASMC11AHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 3KASMC11AHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 3KASMC11AHE3_B/I?

For technical support, including 3KASMC11AHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC11AHE3_B/I requirements.

6.How does Aetrix verify that 3KASMC11AHE3_B/I is sourced from the original manufacturer or authorized distributors?

All 3KASMC11AHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC11AHE3_B/I meets industry standards.

7.What is the process for return or replacement of 3KASMC11AHE3_B/I?

All 3KASMC11AHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC11AHE3_B/I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 3KASMC11AHE3_B/I part is unused and in its original packaging.

Return procedure for 3KASMC11AHE3_B/I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

3KASMC11AHE3_B/I Tags

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