Vishay General Semiconductor - Diodes Division 3KASMC11HE3_A/I
- Part No.:
- 3KASMC11HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
3KASMC11HE3_A/I.pdf
- Description:
- TVS DIODE 11VWM 20.1VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,224
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
3KASMC11HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in DO-214AB (SMC) package, rated for 3000 W peak pulse power (10/1000 μs), 12.2–13.5 V breakdown voltage (VBR), and 185 °C maximum junction temperature. It protects MOSFETs, ICs, and sensor signal lines against inductive switching transients in automotive powertrain control units.
For engineers reviewing the 3KASMC11HE3_A/I datasheet, 3KASMC11HE3_A/I pinout, 3KASMC11HE3_A/I application, or 3KASMC11HE3_A/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, clamping performance at 165 A IPPM, thermal resistance (RθJA = 77.5 °C/W), and RoHS-compliant packaging details per Vishay Doc. #89962.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve stable clamping under high-temperature operation up to TJ = 185 °C and meets AEC-Q101 stress test requirements for automotive under-hood applications. Its unidirectional polarity and low incremental surge resistance enable fast response (<1 ns) to ESD and load-dump events.
The device operates with a 11 V stand-off voltage (VWM), 12.2–13.5 V breakdown at 1 mA test current, and clamps to ≤18.2 V at 165 A peak pulse current - delivering precise overvoltage protection without false triggering in 12 V battery rail systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 11 V - Maximum reverse working voltage before conduction; ensures no leakage during normal 12 V system operation. |
| VBR (min/max) | 12.2 V / 13.5 V at IT = 1 mA - Tight breakdown tolerance enables predictable turn-on during transients. |
| PPPM | 3000 W (10/1000 μs) - Sustains high-energy surges common in automotive load-dump and ISO 7637-2 Pulse 5a events. |
| IPPM | 165 A - Peak surge current capability at which clamping voltage is guaranteed ≤18.2 V. |
| TJ max. | 185 °C - Enables placement near hot components (e.g., power MOSFETs, DC-DC converters) without derating. |
| RθJA | 77.5 °C/W - Thermal resistance measured on standard PCB pad layout; informs heatsinking requirements. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling per JESD47. |
Pinout & Package
Package: DO-214AB (SMC), surface-mount, matte tin-plated leads, UL 94 V-0 molding compound, MSL Level 1 (260 °C peak reflow).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Transient current sink | Connected to protected line; conducts surge current to ground when VAK exceeds VBR. |
| Anode | Reference/ground return | Typically tied to system ground or low-impedance return path; completes clamping loop during overvoltage event. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier process ensures stable VBR drift <±5% over 1000 hrs at 150 °C. |
| Clamping ratio (VC/VBR) | ≤1.49 - Low ratio minimizes voltage overshoot on protected ICs during 165 A surge. |
| Response time | <1 ns - Fast enough to protect sensitive gate oxides of automotive MOSFETs against ESD and fast transients. |
| Solderability | Meets J-STD-002 and JESD22-B102 - Ensures reliable reflow attachment on production PCBs. |
| Whisker resistance | JESD201 Class 2 compliant - Prevents tin whisker growth in long-life automotive modules. |
Applications
| Automotive Powertrain Control | Industrial Motor Drive Protection |
|---|---|
Use Scenario: Protecting MCU I/O and gate drivers in engine control units exposed to ISO 7637-2 Pulse 5a (load dump) and Pulse 1 (inductive switch-off). IC Role / Device Role / Timing Role: Unidirectional TVS placed between 12 V supply rail and ground, clamping transients before they reach downstream regulators and microcontrollers. Use Value: Maintains VCC integrity below 18.2 V during 3000 W surges, preventing brownout resets and latch-up in AEC-Q100 qualified MCUs. |
Use Scenario: Safeguarding position encoder signal lines (e.g., resolver or Hall-effect outputs) in servo drives subjected to back-EMF spikes from brushed DC motors. IC Role / Device Role / Timing Role: TVS mounted directly at connector interface to shunt inductive kickback before it couples into differential receiver inputs. Use Value: Limits transient amplitude to ≤18.2 V while preserving signal integrity - critical for sub-degree angular accuracy in closed-loop motion control. |
| Automotive Body Electronics | Telecom Power Interface |
Use Scenario: Shielding LIN bus transceivers and LED driver ICs in door module ECUs from battery reversal and jump-start surges. IC Role / Device Role / Timing Role: Unidirectional clamp on VBAT-to-ground path, activated only during positive overvoltage events. Use Value: Withstands repeated 12 V system transients up to 185 °C junction temperature, supporting 15-year vehicle service life. |
Use Scenario: Protecting PoE-powered Ethernet PHYs and DC-DC controllers in outdoor base station power supplies against lightning-induced surges on 48 V input rails. IC Role / Device Role / Timing Role: Primary surge suppression stage upstream of active regulation, handling bulk energy before secondary TVS or MOV stages. Use Value: Delivers 3000 W pulse rating with low clamping voltage - reduces stress on downstream 60 V-rated FETs and improves overall system surge immunity to IEC 61000-4-5 Level 4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ11A-E3/57T | Lower PPPM (400 W), same DO-214AC (SMA) package, VBR = 12.2–13.5 V, RθJA = 110 °C/W | Not AEC-Q101 qualified; suitable for industrial/commercial only | Select when cost sensitivity outweighs automotive qualification and surge energy is ≤400 W. |
| 1.5KE11A | Through-hole DO-201AE package, PPPM = 1500 W, VBR = 12.2–13.5 V, TJ max = 175 °C | Larger footprint, lower thermal performance, not optimized for automated SMT assembly | Choose for legacy through-hole designs where board space and reflow compatibility are not constraints. |
Compared with SMAJ11A-E3/57T and 1.5KE11A, the 3KASMC11HE3_A/I provides 7.5× higher surge power handling, AEC-Q101 qualification, and superior thermal resistance - making it the only option qualified for under-hood automotive deployment with full SMT manufacturability.
Availability
3KASMC11HE3_A/I is available at Aetrix Electronics and suitable for automotive powertrain control, industrial motor drive protection, and telecom power interface applications requiring stable component supply, AEC-Q101 compliance, and high-temperature reliability.
Supply support for 3KASMC11HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The 3KASMC series is part of Vishay's PAR® (Protected Anisotropic Rectifier) TVS platform, engineered specifically for AEC-Q101-compliant transient suppression in harsh-temperature automotive environments.
FAQ
What is the clamping voltage of the 3KASMC11HE3_A/I at its rated peak pulse current?
The 3KASMC11HE3_A/I clamps to a maximum of 18.2 V at its rated peak pulse current of 165 A (10/1000 μs waveform), as specified in Vishay Document #89962. This clamping voltage ensures protected circuitry remains within safe operating limits during high-energy transients such as automotive load dump events. The 3KASMC11HE3_A/I achieves this with low incremental surge resistance and tight VBR tolerance.
Is the 3KASMC11HE3_A/I qualified for automotive use?
Yes, the 3KASMC11HE3_A/I is AEC-Q101 qualified per Vishay Document #89962, having passed stress tests including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling. Its 185 °C maximum junction temperature rating and DO-214AB package construction make the 3KASMC11HE3_A/I suitable for under-hood automotive applications including engine control units and body control modules.
What package type does the 3KASMC11HE3_A/I use, and what are its key mechanical features?
The 3KASMC11HE3_A/I uses the DO-214AB (SMC) surface-mount package with matte tin-plated leads, UL 94 V-0 flammability rating, and MSL Level 1 moisture sensitivity (260 °C peak reflow). Its dimensions are 6.22 mm × 5.59 mm × 2.41 mm, and it features a cathode band for polarity identification. The 3KASMC11HE3_A/I is designed for automated pick-and-place and reflow soldering per J-STD-002 standards.
How does the thermal performance of the 3KASMC11HE3_A/I compare to similar TVS diodes?
The 3KASMC11HE3_A/I has a typical junction-to-ambient thermal resistance (RθJA) of 77.5 °C/W when mounted on the minimum recommended pad layout, significantly lower than standard SMA-package TVS diodes (~110 °C/W). This improved thermal performance allows the 3KASMC11HE3_A/I to sustain higher average power dissipation and operate reliably at elevated ambient temperatures - a key advantage in compact automotive and industrial power modules.
What is the meaning of the "_A/I" suffix in the 3KASMC11HE3_A/I part number?
The "_A/I" suffix in 3KASMC11HE3_A/I indicates the packaging configuration: "A" denotes the base qualification level (AEC-Q101), and "I" specifies the delivery mode as 13-inch diameter plastic tape and reel with a base quantity of 3500 units, per Vishay's ordering information table in Document #89962. The 3KASMC11HE3_A/I is RoHS-compliant and halogen-free per JEDEC JS709A standards.
3KASMC11HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 11V
- Voltage - Breakdown (Min):
- 12.2V
- Voltage - Clamping (Max) @ Ipp:
- 20.1V
- Current - Peak Pulse (10/1000µs):
- 149A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
3KASMC11HE3_A/I FAQ
1.How can I place an order for 3KASMC11HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for 3KASMC11HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3KASMC11HE3_A/I reliable?
The price and inventory of 3KASMC11HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC11HE3_A/I is usually 5 days.
3.What payment methods are accepted for 3KASMC11HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC11HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3KASMC11HE3_A/I?
3KASMC11HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3KASMC11HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3KASMC11HE3_A/I?
For technical support, including 3KASMC11HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC11HE3_A/I requirements.
6.How does Aetrix verify that 3KASMC11HE3_A/I is sourced from the original manufacturer or authorized distributors?
All 3KASMC11HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC11HE3_A/I meets industry standards.
7.What is the process for return or replacement of 3KASMC11HE3_A/I?
All 3KASMC11HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC11HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3KASMC11HE3_A/I part is unused and in its original packaging.
Return procedure for 3KASMC11HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
3KASMC11HE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

