Vishay General Semiconductor - Diodes Division 3KASMC12AHM3_A/I
- Part No.:
- 3KASMC12AHM3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
3KASMC12AHM3_A/I.pdf
- Description:
- TVS DIODE 12VWM 19.9VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:6,637
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
3KASMC12AHM3_A/I from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for high-energy surge clamping in automotive and industrial power rails. It delivers 3000 W peak pulse power (10/1000 μs), clamps at 19.9 V under 151 A surge current, and operates up to 185 °C junction temperature - enabling robust protection of MOSFETs and ICs against inductive switching transients in engine control units and motor drives.
For engineers reviewing the 3KASMC12AHM3_A/I datasheet, 3KASMC12AHM3_A/I pinout, 3KASMC12AHM3_A/I application, or 3KASMC12AHM3_A/I equivalent, key selection criteria include its DO-214AB (SMC) package, 12 V stand-off voltage, AEC-Q101 qualification, 177 A maximum peak pulse current, and 19.9 V clamping voltage at rated surge - all critical for automotive-grade ESD and load-dump protection design validation.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low incremental surge resistance. Its unidirectional polarity and 13.3–14.7 V breakdown range (at 1 mA) ensure precise overvoltage triggering while maintaining tight tolerance across production lots.
The device meets J-STD-020 MSL Level 1 (260 °C peak reflow), supports 200 A non-repetitive forward surge (8.3 ms half-sine), and exhibits 77.5 °C/W junction-to-ambient thermal resistance - confirming suitability for high-power-density PCB layouts with minimal heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage (VWM) | 12 V - maximum continuous reverse operating voltage before clamping begins; defines safe working margin for 12 V automotive systems. |
| Breakdown Voltage (VBR) | 13.3–14.7 V at 1 mA - guaranteed conduction onset range; ensures reliable turn-on before downstream component damage thresholds. |
| Clamping Voltage (VC) | 19.9 V at 151 A (10/1000 μs) - peak voltage seen by protected circuit during worst-case surge; enables safe operation of 20 V-rated MOSFETs. |
| Peak Pulse Power (PPPM) | 3000 W - energy-handling capacity for standardized 10/1000 μs transients; exceeds ISO 7637-2 Pulse 5a requirements. |
| Junction Temperature (TJ) | −65 to +185 °C - extended thermal range supports under-hood automotive placement without derating penalties. |
| AEC-Q101 Qualified | Yes - validated for automotive electronic modules per stress test requirements including HTGB, HTRB, and TCT. |
| Package | DO-214AB (SMC) - industry-standard surface-mount outline with 7.75 mm × 6.22 mm footprint and matte tin-plated leads. |
Pinout & Package
DO-214AB (SMC) package: molded epoxy case with cathode band marking; terminals are matte tin-plated leads compliant with J-STD-002 solderability and JESD 22-B102 whisker testing (Class 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point in forward bias; connected to ground or low-side reference | Provides low-impedance path to shunt surge current away from protected IC/MOSFET when reverse voltage exceeds VWM. |
| Cathode | Current exit point in forward bias; marked by color band; connected to protected line | Defines polarity-sensitive connection - must be placed on the line requiring clamping (e.g., battery rail, motor driver output). |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation optimized design | Enables stable leakage performance (<2 μA at 12 V, 150 °C) and long-term reliability under thermal cycling. |
| TJ = 185 °C capability | Eliminates need for thermal derating in under-hood environments up to 150 °C ambient, simplifying thermal design. |
| 3000 W peak pulse power (10/1000 μs) | Handles severe load-dump events (e.g., ISO 7637-2 Pulse 5a) without degradation or failure. |
| Low incremental surge resistance | Minimizes clamping voltage overshoot during fast-rising transients, improving protection margin for sensitive gate drivers. |
| MSL Level 1, 260 °C peak reflow | Supports standard lead-free SMT assembly without moisture sensitivity concerns or baking requirements. |
Applications
| Automotive Engine Control Unit (ECU) | Industrial Motor Drive Power Stage |
|---|---|
Use Scenario: Protecting microcontroller I/O and power supply inputs from alternator load-dump spikes and relay coil flyback in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between battery rail and local DC/DC input or MCU VDD pin. Use Value: Clamps 19.9 V at 151 A, staying below 20 V absolute maximum rating of automotive MCUs and ensuring AEC-Q100 compliance. |
Use Scenario: Safeguarding gate drivers and bootstrap circuits in 3-phase inverter stages from cross-conduction-induced shoot-through surges. IC Role / Device Role / Timing Role: Fast-response TVS mounted directly at half-bridge output node to limit dv/dt-induced voltage overshoot. Use Value: 10/1000 μs response and 3000 W rating absorb repetitive switching transients without parametric shift or thermal runaway. |
| Telecom Base Station Power Supply | Consumer Appliance Main Board |
Use Scenario: Suppressing lightning-induced surges on -48 V DC distribution lines feeding RF amplifier modules in outdoor base stations. IC Role / Device Role / Timing Role: Primary overvoltage protector on input bulk capacitor rail, upstream of DC/DC converters. Use Value: 185 °C TJ rating allows operation in sealed enclosures with limited airflow; RoHS-compliant HM3 suffix meets telecom environmental standards. |
Use Scenario: Shielding microcontroller reset lines and communication buses (e.g., I²C) from ESD and relay bounce in washing machine control boards. IC Role / Device Role / Timing Role: Low-capacitance TVS (typ. <100 pF at 0 V) placed adjacent to connector pins to minimize signal distortion. Use Value: 19.9 V clamping prevents latch-up in 3.3 V/5 V logic while maintaining sub-ns response time for human-body-model ESD events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ12A-E3/57T (Vishay) | Lower PPPM (400 W), smaller SMA package (DO-214AC), same 12 V VWM but higher VC (20.1 V at 21.5 A) | Targeted at lower-energy consumer electronics; insufficient for automotive load-dump compliance | Select 3KASMC12AHM3_A/I when 3000 W surge handling and AEC-Q101 qualification are mandatory. |
| 1.5KE12A (ON Semiconductor) | Through-hole DO-201 package, 1500 W PPPM, higher VF (3.5 V), no AEC-Q101 qualification | Legacy industrial designs with through-hole assembly; not suitable for automated SMT or automotive use | Choose 3KASMC12AHM3_A/I for surface-mount compatibility, higher power density, and automotive qualification. |
Compared with SMAJ12A-E3/57T and 1.5KE12A, the 3KASMC12AHM3_A/I provides triple the peak pulse power in a qualified SMT package, enabling single-device compliance with ISO 7637-2 Pulse 5a while eliminating through-hole assembly and reducing board space by >40%.
Availability
3KASMC12AHM3_A/I is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drives, telecom power supplies, and consumer appliance main boards requiring stable component supply with full AEC-Q101 traceability and RoHS compliance.
Supply support for 3KASMC12AHM3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The 3KASMC series belongs to Vishay's PAR® TVS platform, engineered specifically for high-temperature, high-energy transient suppression in automotive power electronics and harsh-environment industrial controls.
FAQ
What is the clamping voltage of the 3KASMC12AHM3_A/I under full-rated surge current?
The 3KASMC12AHM3_A/I clamps at 19.9 V when subjected to its maximum rated peak pulse current of 151 A using the standard 10/1000 μs waveform. This value is measured per ANSI/IEEE C62.35 and confirmed in the Vishay datasheet revision 05-Mar-13, ensuring predictable protection behavior for 20 V-tolerant components in the protected circuit.
Is the 3KASMC12AHM3_A/I qualified for automotive applications?
Yes, the 3KASMC12AHM3_A/I is AEC-Q101 qualified and explicitly listed as such in the Vishay documentation. It undergoes stress testing including high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), and temperature cycling (TCT) to meet automotive reliability requirements - making it suitable for use in engine control units, body control modules, and ADAS power supplies.
What does the "HM3_A/I" suffix indicate in 3KASMC12AHM3_A/I?
The "HM3" denotes the RoHS-compliant, AEC-Q101-qualified DO-214AB (SMC) package variant; "_A" indicates the revision code; and "/I" specifies the 13-inch tape-and-reel delivery format with 3500 units per reel. This ordering code ensures traceable, production-ready packaging aligned with Vishay's preferred logistics configuration.
Can the 3KASMC12AHM3_A/I replace older SMC-packaged TVS diodes like P6SMB12A?
The 3KASMC12AHM3_A/I offers superior performance versus P6SMB12A: 3000 W vs. 600 W peak pulse power, 185 °C vs. 150 °C max junction temperature, and AEC-Q101 qualification vs. commercial grade. While both use DO-214AB, direct replacement requires verification of layout thermal relief and surge current path - the 3KASMC12AHM3_A/I is not a drop-in substitute without system-level validation.
What is the maximum reverse leakage current of the 3KASMC12AHM3_A/I at 12 V and 150 °C?
Per the Vishay datasheet, the 3KASMC12AHM3_A/I exhibits a maximum reverse leakage current of 2.0 μA at VWM = 12 V and TJ = 150 °C. This low leakage ensures minimal standby power loss in always-on automotive modules and maintains signal integrity on high-impedance sensor lines.
3KASMC12AHM3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 19.9V
- Current - Peak Pulse (10/1000µs):
- 151A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
3KASMC12AHM3_A/I FAQ
1.How can I place an order for 3KASMC12AHM3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for 3KASMC12AHM3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3KASMC12AHM3_A/I reliable?
The price and inventory of 3KASMC12AHM3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC12AHM3_A/I is usually 5 days.
3.What payment methods are accepted for 3KASMC12AHM3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC12AHM3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3KASMC12AHM3_A/I?
3KASMC12AHM3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3KASMC12AHM3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3KASMC12AHM3_A/I?
For technical support, including 3KASMC12AHM3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC12AHM3_A/I requirements.
6.How does Aetrix verify that 3KASMC12AHM3_A/I is sourced from the original manufacturer or authorized distributors?
All 3KASMC12AHM3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC12AHM3_A/I meets industry standards.
7.What is the process for return or replacement of 3KASMC12AHM3_A/I?
All 3KASMC12AHM3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC12AHM3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3KASMC12AHM3_A/I part is unused and in its original packaging.
Return procedure for 3KASMC12AHM3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
3KASMC12AHM3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

