Vishay General Semiconductor - Diodes Division 3KASMC15AHE3/57T
- Part No.:
- 3KASMC15AHE3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
3KASMC15AHE3/57T.pdf
- Description:
- TVS DIODE 15VWM 24.4VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:9,639
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
3KASMC15AHE3/57T from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor (TVS) diode in DO-214AB (SMC) package, rated for 15 V stand-off voltage, 16.7–18.5 V breakdown at 1 mA, 3000 W peak pulse power (10/1000 μs), and 123 A peak surge current - deployed for automotive power rail and sensor line protection against inductive switching transients.
For engineers reviewing the 3KASMC15AHE3/57T datasheet, 3KASMC15AHE3/57T pinout, 3KASMC15AHE3/57T application, or 3KASMC15AHE3/57T equivalent, key selection criteria include clamping voltage (24.4 V at 123 A), junction temperature capability (−65 °C to +185 °C), AEC-Q101 qualification, MSL Level 1 rating, and unidirectional polarity with cathode band marking.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low incremental surge resistance. Its 185 °C maximum junction temperature and AEC-Q101 qualification confirm suitability for under-hood automotive environments where thermal derating and reliability under transient stress are critical.
The device operates exclusively in unidirectional mode with a 15 V reverse stand-off voltage and clamps at ≤24.4 V during 123 A, 10/1000 μs surges - enabling robust overvoltage protection for 12 V automotive systems without forward conduction interference during normal operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 15 V - Maximum continuous reverse operating voltage before clamping begins; sets system-level DC rail compatibility for 12 V nominal automotive circuits. |
| VBR (min/max) | 16.7 V / 18.5 V at 1 mA - Confirmed breakdown threshold range ensures predictable turn-on margin above VWM, minimizing false triggering. |
| IPPM | 123 A - Peak surge current handling at 10/1000 μs waveform; defines minimum transient energy absorption capacity per pulse. |
| VC | 24.4 V - Clamping voltage at IPPM; determines maximum voltage imposed on protected IC/MOSFET during worst-case surge. |
| PPPM | 3000 W - Peak pulse power rating; enables suppression of high-energy transients such as ISO 7637-2 Pulse 1/2a/5a without degradation. |
| TJ max | +185 °C - Maximum junction temperature; supports operation in engine compartment locations with minimal heatsinking. |
| Package | DO-214AB (SMC) - Standardized surface-mount outline with 7.11 mm × 6.60 mm footprint and 3.20 mm height; compatible with automated SMT assembly. |
Pinout & Package
DO-214AB (SMC) package with two terminals: anode and cathode. Cathode identified by molded color band. Mounting requires minimum pad layout per Vishay spec: 3.20 mm × 1.52 mm pads with 4.69 mm center-to-center spacing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to ground or low-impedance return plane; carries full surge current during clamping events. |
| Cathode | Protected line connection / Clamping node | Connected to line being protected (e.g., 12 V rail or sensor signal); voltage referenced to anode during transient suppression. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, HTRB, and surge endurance - required for Tier-1 ECU and ADAS module designs. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns - eliminates pre-bake requirements in production. |
| 185 °C junction rating | Enables direct placement near heat sources (e.g., power converters, motor drivers) without thermal derating penalties in under-hood applications. |
| 3000 W peak pulse power | Meets ISO 7637-2 Pulse 5a (load dump) energy requirements for 12 V systems with margin - protects downstream MOSFETs and microcontrollers. |
| Low clamping ratio (VC/VBR ≈ 1.35) | Minimizes overvoltage stress on protected devices while maintaining fast response (<1 ps typical) - preserves signal integrity in sensor interfaces. |
Applications
| Automotive Power Rail Protection | Engine Control Unit (ECU) Input Protection |
|---|---|
|
Use Scenario: Suppresses load dump transients (ISO 7637-2 Pulse 5a) on 12 V battery-fed power rails in vehicles. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed between power rail and chassis ground to clamp surges above 24.4 V. Use Value: Prevents damage to PMICs and MCU power inputs by limiting transient voltage to safe levels within 1 ns response time. |
Use Scenario: Protects analog and digital input pins of ECUs from inductive kickback generated by solenoid and relay switching. IC Role / Device Role / Timing Role: Standoff-rated TVS connected inline with sensor supply lines (e.g., MAP, TPS) to absorb 100–200 A spikes. Use Value: Maintains ECU functional safety by ensuring input voltage stays below absolute maximum ratings during aggressive load switching. |
| Automotive Sensor Signal Line Protection | Industrial CAN Bus Node Protection |
|
Use Scenario: Shields low-voltage analog sensor outputs (e.g., 0–5 V throttle position signals) from ESD and coupled transients. IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS placed at connector interface to shunt ESD (IEC 61000-4-2 ±15 kV) to ground. Use Value: Preserves signal fidelity with <10 pF junction capacitance while meeting AEC-Q101 stress test requirements. |
Use Scenario: Guards CANH/CANL differential pair nodes in industrial gateways against surge coupling from adjacent 24 V control wiring. IC Role / Device Role / Timing Role: Dual TVS configuration (one per line) referenced to common ground, leveraging 15 V VWM to avoid interfering with CAN recessive/dominant states. Use Value: Enables robust communication continuity during lightning-induced surges up to 3 kV (IEC 61000-4-5) without bus lockup. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ15A | Lower PPPM (400 W), lower IPPM (32.4 A), same VWM/VBR range, SMA package (smaller thermal mass) | Not AEC-Q101 qualified; limited to consumer/industrial non-automotive use | Select when cost-sensitive, low-energy transients only, and automotive qualification is not required. |
| 1.5KE15A | Higher VC (24.5 V), same VWM, through-hole DO-201 package, 1500 W PPPM | Lacks MSL Level 1 and AEC-Q101; unsuitable for SMT-only production or automotive under-hood placement | Choose for legacy through-hole designs needing higher surge margin than SMAJ but less than 3KASMC series. |
Compared with SMAJ15A and 1.5KE15A, the 3KASMC15AHE3/57T delivers 7.5× higher peak pulse power, AEC-Q101 compliance, and MSL Level 1 reflow readiness - making it the only option qualified for high-reliability automotive SMT deployment requiring sustained 185 °C operation.
Availability
3KASMC15AHE3/57T is available at Aetrix Electronics and suitable for automotive power rail protection, ECU input safeguarding, and industrial CAN bus node hardening requiring stable component supply across multi-year production cycles.
Supply support for 3KASMC15AHE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, optoelectronics, and passive components for automotive, industrial, and computing markets.
The 3KASMC series belongs to Vishay's PAR® (Protection Against Real-world transients) TVS family, engineered specifically for AEC-Q101-compliant automotive transient suppression with extended temperature range and high pulse power density.
FAQ
What is the clamping voltage of the 3KASMC15AHE3/57T under peak surge conditions?
The 3KASMC15AHE3/57T clamps at a maximum of 24.4 V when subjected to its rated 123 A peak pulse current (10/1000 μs waveform). This value is measured and guaranteed per Vishay Document 89962, ensuring protected circuitry remains within safe voltage limits during ISO 7637-2 Pulse 5a load dump events. The 3KASMC15AHE3/57T maintains this performance across its full operating temperature range.
Is the 3KASMC15AHE3/57T qualified for automotive applications?
Yes, the 3KASMC15AHE3/57T is AEC-Q101 qualified and rated for operation from −65 °C to +185 °C, making it suitable for under-hood automotive environments. It meets MSL Level 1 per J-STD-020 and is RoHS-compliant. The 3KASMC15AHE3/57T is explicitly listed in Vishay's AEC-Q101 certified product table for transient voltage suppressors.
What package type does the 3KASMC15AHE3/57T use, and what are its mounting requirements?
The 3KASMC15AHE3/57T uses the DO-214AB (SMC) surface-mount package, with dimensions 7.11 mm × 6.60 mm × 3.20 mm. Vishay specifies a minimum pad layout: 3.20 mm × 1.52 mm pads spaced 4.69 mm center-to-center. The 3KASMC15AHE3/57T requires no pre-bake due to its MSL Level 1 rating and is compatible with standard lead-free reflow profiles peaking at 260 °C.
How does the 3KASMC15AHE3/57T compare to standard SMAJ-series TVS diodes?
The 3KASMC15AHE3/57T delivers 3000 W peak pulse power - 7.5× higher than the 400 W rating of SMAJ15A - and is AEC-Q101 qualified, whereas SMAJ15A is not. The 3KASMC15AHE3/57T also features higher surge current (123 A vs. 32.4 A) and superior thermal capability (185 °C vs. 150 °C). These differences make the 3KASMC15AHE3/57T appropriate for demanding automotive applications where the SMAJ15A would fail prematurely.
What is the reverse leakage current specification for the 3KASMC15AHE3/57T at rated stand-off voltage?
At its 15 V stand-off voltage (VWM) and ambient temperature of 25 °C, the 3KASMC15AHE3/57T exhibits a maximum reverse leakage current of 1.0 μA. At elevated temperature (TJ = 150 °C), leakage increases to a maximum of 10 μA - a value confirmed in Vishay's Electrical Characteristics table (Document 89962, page 2). This low leakage ensures minimal power loss in always-on automotive circuits.
3KASMC15AHE3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15V
- Voltage - Breakdown (Min):
- 16.7V
- Voltage - Clamping (Max) @ Ipp:
- 24.4V
- Current - Peak Pulse (10/1000µs):
- 123A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
3KASMC15AHE3/57T FAQ
1.How can I place an order for 3KASMC15AHE3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for 3KASMC15AHE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3KASMC15AHE3/57T reliable?
The price and inventory of 3KASMC15AHE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC15AHE3/57T is usually 5 days.
3.What payment methods are accepted for 3KASMC15AHE3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC15AHE3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3KASMC15AHE3/57T?
3KASMC15AHE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3KASMC15AHE3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3KASMC15AHE3/57T?
For technical support, including 3KASMC15AHE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC15AHE3/57T requirements.
6.How does Aetrix verify that 3KASMC15AHE3/57T is sourced from the original manufacturer or authorized distributors?
All 3KASMC15AHE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC15AHE3/57T meets industry standards.
7.What is the process for return or replacement of 3KASMC15AHE3/57T?
All 3KASMC15AHE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC15AHE3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3KASMC15AHE3/57T part is unused and in its original packaging.
Return procedure for 3KASMC15AHE3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
3KASMC15AHE3/57T Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

