My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 3KASMC15AHE3_B/H
- Part No.:
- 3KASMC15AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
3KASMC15AHE3_B/H.pdf
- Description:
- TVS DIODE 15VWM 24.4VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:9,957
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
3KASMC15AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping inductive load transients and ESD events. It features 15 V stand-off voltage (VWM), 17.6 V nominal breakdown voltage (VBR), 3000 W peak pulse power (10/1000 μs), 24.4 V maximum clamping voltage at 123 A IPPM, and 185 °C maximum junction temperature - deployed in automotive sensor signal lines and industrial power supply protection.
For engineers reviewing the 3KASMC15AHE3_B/H datasheet, 3KASMC15AHE3_B/H pinout, 3KASMC15AHE3_B/H application, or 3KASMC15AHE3_B/H equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification status, SMC package thermal resistance (RθJL = 18.3 °C/W), clamping ratio (VC/VBR ≈ 1.39), and compliance with J-STD-020 MSL level 1 reflow profile.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve stable clamping under high-temperature operation up to TJ = 185 °C. Its unidirectional architecture provides low forward voltage (VF = 3.5 V at 100 A) and fast response time for surge suppression on DC-biased lines.
The device is rated for 3000 W peak pulse power per 10/1000 μs waveform and exhibits low incremental surge resistance, enabling effective energy diversion during transient events such as load dump or ISO 7637-2 pulses. It meets AEC-Q101 stress testing requirements and is RoHS-compliant with matte tin-plated leads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 15 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC bias margin for protected circuitry. |
| VBR (nom) | 17.6 V at 1.0 mA - Breakdown threshold where avalanche conduction initiates; ensures predictable turn-on during overvoltage events. |
| VC @ IPPM | 24.4 V at 123 A - Clamped voltage during 3000 W transient; determines worst-case stress on downstream components. |
| PPPM | 3000 W (10/1000 μs) - Peak surge energy handling capacity; supports robust protection against automotive and industrial transients. |
| TJ max | +185 °C - Enables reliable operation in under-hood automotive environments and high-power industrial enclosures. |
| RθJL | 18.3 °C/W - Junction-to-lead thermal resistance; critical for estimating temperature rise during repetitive surge conditions. |
| Polarity | Unidirectional - Protects only against positive-going transients on cathode-biased lines; requires correct orientation in PCB layout. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, molded epoxy case meeting UL 94 V-0 flammability rating; cathode indicated by color band; matte tin-plated leads compliant with J-STD-002 solderability and JESD 22-B102 whisker testing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode of internal avalanche junction | Connected to higher-potential side of protected line; reverse-biased during normal operation; conducts when VAK exceeds VBR. |
| Anode | Cathode of internal avalanche junction | Typically tied to ground or low-side reference; completes current path during clamping; must handle full IPPM surge current. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier process ensures stable VBR drift ≤ ±5 % over lifetime and temperature cycling. |
| AEC-Q101 qualification | Validated for automotive applications including engine control units and ADAS sensor interfaces per stress test requirements. |
| MSL Level 1 rating | Supports lead-free reflow up to 260 °C peak without popcorn cracking or delamination; no floor life limitation. |
| Low clamping ratio | VC/VBR = 24.4/17.6 ≈ 1.39 - Minimizes overvoltage overshoot during fast transients compared to competing TVS devices. |
| High IFSM capability | 200 A surge rating (8.3 ms half-sine) - Withstands repeated motor-commutation spikes without degradation. |
Applications
| Automotive Sensor Protection | Industrial Power Supply Input |
|---|---|
|
Use Scenario: Protecting CAN/LIN bus transceivers and analog sensor outputs (e.g., pressure, temperature) from load-dump and jump-start transients in vehicle ECUs. IC Role / Device Role / Timing Role: Unidirectional TVS clamp placed between signal line and ground, activated within <1 ns to limit voltage to ≤24.4 V. Use Value: Prevents latch-up or permanent damage to 3.3 V/5 V interface ICs while maintaining signal integrity during ISO 16750-2 pulses. |
Use Scenario: Safeguarding 24 V DC input stages of PLC modules and motor drives against inductive switching surges from contactors and solenoids. IC Role / Device Role / Timing Role: Primary overvoltage clamp on bulk input rail, coordinated with upstream fuse and downstream DC-DC converter. Use Value: Absorbs 3000 W transients without failure, enabling compliance with IEC 61000-4-5 Level 4 (4 kV) immunity testing. |
| Telecom Line Interface | Consumer Device USB Port |
|
Use Scenario: Shielding Ethernet PHYs and PoE injectors from lightning-induced surges on twisted-pair data lines in outdoor telecom cabinets. IC Role / Device Role / Timing Role: Secondary protection stage after gas discharge tube (GDT), providing low-clamp backup for fast-rising transients. Use Value: Limits residual voltage to 24.4 V at 123 A, preventing damage to magnetics and PHY ICs rated for ≤30 V absolute maximum. |
Use Scenario: ESD and cable discharge event (CDE) protection on USB 2.0 VBUS and D+/D− lines in smart home hubs and portable audio gear. IC Role / Device Role / Timing Role: Low-capacitance unidirectional TVS placed adjacent to connector, grounded to chassis via short trace. Use Value: Clamps 8 kV contact ESD (IEC 61000-4-2) to <25 V within nanoseconds, preserving signal fidelity and avoiding false disconnects. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ15AHE3_A/H | Same VWM (15 V), lower PPPM (600 W), SMB package (smaller footprint, higher RθJA = 110 °C/W) | Limited to lower-energy transients; unsuitable for automotive load dump or industrial 3000 W pulses | Select when space-constrained and surge energy ≤600 W; verify thermal derating at elevated ambient temperatures. |
| SMCJ15AHE3_A/H | Identical VWM (15 V), same PPPM (3000 W), identical SMC package, but rated for TJ = 175 °C (vs. 185 °C) | Not AEC-Q101 qualified; lacks automotive reliability validation and extended temperature margin | Acceptable for industrial use where AEC-Q101 is not mandated; avoid in under-hood automotive designs requiring 185 °C operation. |
Compared with SMBJ15AHE3_A/H and SMCJ15AHE3_A/H, the 3KASMC15AHE3_B/H delivers superior high-temperature reliability (185 °C), AEC-Q101 qualification, and consistent 3000 W clamping performance - making it the preferred choice for mission-critical automotive and harsh-environment industrial deployments.
Availability
3KASMC15AHE3_B/H is available at Aetrix Electronics and suitable for automotive sensor protection, industrial power supply input stages, and telecom line interface circuits requiring stable component supply, long-term lifecycle support, and AEC-Q101 compliance.
Supply support for 3KASMC15AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, thermal performance, and automotive-grade qualification.
The 3KASMCxxA series is part of Vishay's PAR® (Protected Avalanche Rectifier) transient voltage suppressor family, engineered specifically for high-energy, high-temperature environments including engine control, battery management, and industrial automation systems.
FAQ
What is the AEC-Q101 qualification status of the 3KASMC15AHE3_B/H?
The 3KASMC15AHE3_B/H is AEC-Q101 qualified, as confirmed by Vishay's ordering code suffix "HE3" and documentation in datasheet 88480. This qualification covers stress tests including HTGB, HTRB, TCT, and mechanical shock, validating its suitability for automotive applications such as engine control modules and ADAS sensor interfaces.
Does the 3KASMC15AHE3_B/H have bidirectional or unidirectional polarity?
The 3KASMC15AHE3_B/H is unidirectional only, as explicitly stated in the Vishay datasheet. Its cathode band marks the terminal that must be connected toward the higher-potential side of the protected line, and it clamps only positive transients relative to ground - unlike bidirectional variants which protect both polarities.
What is the maximum clamping voltage of the 3KASMC15AHE3_B/H at its rated peak pulse current?
The 3KASMC15AHE3_B/H has a maximum clamping voltage (VC) of 24.4 V at its rated peak pulse current (IPPM) of 123 A, measured using the standard 10/1000 μs waveform. This value is specified in the Electrical Characteristics table and defines the upper voltage limit imposed on protected circuitry during a full-rated transient event.
Can the 3KASMC15AHE3_B/H be used in lead-free reflow processes?
Yes, the 3KASMC15AHE3_B/H meets J-STD-020 MSL Level 1 and supports lead-free reflow with a maximum peak temperature of 260 °C. Its matte tin-plated leads are solderable per J-STD-002, and the package is qualified for single or multiple reflow cycles without degradation of electrical or mechanical performance.
How does the thermal resistance of the 3KASMC15AHE3_B/H compare to similar SMC-package TVS diodes?
The 3KASMC15AHE3_B/H has a typical junction-to-lead thermal resistance (RθJL) of 18.3 °C/W, significantly lower than the junction-to-ambient (RθJA = 77.5 °C/W). This low RθJL enables efficient heat transfer to PCB copper pours or heatsinks, improving sustained surge handling versus competitors with higher RθJL values in the same SMC outline.
3KASMC15AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 15V
- Voltage - Breakdown (Min):
- 16.7V
- Voltage - Clamping (Max) @ Ipp:
- 24.4V
- Current - Peak Pulse (10/1000µs):
- 123A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMC)
3KASMC15AHE3_B/H FAQ
1.How can I place an order for 3KASMC15AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for 3KASMC15AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3KASMC15AHE3_B/H reliable?
The price and inventory of 3KASMC15AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC15AHE3_B/H is usually 5 days.
3.What payment methods are accepted for 3KASMC15AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC15AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3KASMC15AHE3_B/H?
3KASMC15AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3KASMC15AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3KASMC15AHE3_B/H?
For technical support, including 3KASMC15AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC15AHE3_B/H requirements.
6.How does Aetrix verify that 3KASMC15AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All 3KASMC15AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC15AHE3_B/H meets industry standards.
7.What is the process for return or replacement of 3KASMC15AHE3_B/H?
All 3KASMC15AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC15AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3KASMC15AHE3_B/H part is unused and in its original packaging.
Return procedure for 3KASMC15AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
3KASMC15AHE3_B/H Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
