Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Vishay General Semiconductor - Diodes Division 3KASMC17AHE3/57T

Part No.:
3KASMC17AHE3/57T
Manufacturer:
Vishay General Semiconductor - Diodes Division
Category:
TVS Diodes
Package:
DO-214AB, SMC
Datasheet:
Aetrix3KASMC17AHE3/57T.pdf
Description:
TVS DIODE 17VWM 27.6VC DO214AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,298

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

3KASMC17AHE3/57T from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in DO-214AB (SMC) package, rated for 17 V stand-off voltage (VWM), 18.9–20.9 V breakdown (VBR), 3000 W peak pulse power (10/1000 µs), 27.6 V clamping voltage at 109 A IPPM, and 185 °C maximum junction temperature - deployed for automotive power line and sensor signal protection.

For engineers reviewing the 3KASMC17AHE3/57T datasheet, 3KASMC17AHE3/57T pinout, 3KASMC17AHE3/57T application, or 3KASMC17AHE3/57T equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, MSL Level 1 moisture sensitivity, 109 A surge current capability, and thermal resistance (RθJA = 77.5 °C/W) under standard SMT mounting.

Technical Context

This TVS diode uses passivated anisotropic rectifier technology to deliver stable clamping performance across -65 °C to +185 °C operating range, with low incremental surge resistance and sub-nanosecond response time to transient overvoltage events. Its design targets high-reliability automotive and industrial environments where sustained thermal stress and repetitive load-switching transients are present.

The device operates exclusively in unidirectional mode, with cathode denoted by color band, and is optimized for 10/1000 µs waveform compliance per ANSI/IEEE C62.35. It meets JESD201 Class 2 whisker resistance and UL 94 V-0 flammability requirements via its DO-214AB molding compound.

Key Specifications

Parameter Value and Actual Design Meaning
VWM17 V - Maximum continuous reverse voltage before clamping activation; defines safe operating margin for 12 V automotive systems.
VBR (min/max)18.9 V / 20.9 V - Breakdown occurs within this range at 1 mA test current; ensures predictable turn-on threshold.
VC @ IPPM27.6 V - Clamped voltage at 109 A peak pulse current; limits downstream IC stress during 3000 W transient events.
PPPM3000 W - Peak pulse power handling with 10/1000 µs waveform; supports high-energy ESD and load-dump suppression.
TJ max.+185 °C - Enables operation in under-hood automotive locations without derating below ambient 125 °C.
RθJA77.5 °C/W - Thermal resistance from junction to ambient on standard PCB pad layout; informs heatsinking requirements.
AEC-Q101Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per AEC specification.

Pinout & Package

Package: DO-214AB (SMC), surface-mount, matte tin-plated leads, cathode indicated by color band. Complies with JEDEC MO-136AC outline and J-STD-002 solderability standards.

Pin/Terminal Circuit Role Design Meaning
AnodeForward conduction terminalConnected to system ground or lower-potential rail in unidirectional TVS configuration.
CathodeClamping terminalConnected to protected line (e.g., CAN_H, LIN, battery feed); color band identifies this end.

Key Features

Feature Design Value
Junction passivationOptimized anisotropic rectifier structure ensures stable VBR and leakage over lifetime and temperature.
High-temperature operationRated up to TJ = +185 °C - eliminates need for external derating in engine-control modules and ADAS ECUs.
Surge robustness200 A IFSM (8.3 ms half-sine) and 109 A IPPM (10/1000 µs) support ISO 7637-2 Pulse 5a/b load-dump immunity.
Manufacturing complianceMSL Level 1 (260 °C reflow peak), RoHS-compliant, JESD201 Class 2 whisker resistant - suitable for automated SMT assembly.

Applications

Automotive Power Line Protection Industrial Sensor Interface Protection

Use Scenario: Suppresses ISO 7637-2 load-dump transients (up to 60 V, 400 ms) on 12 V battery-fed ECUs.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and input filter capacitor to clamp overvoltage before DC/DC converter.

Use Value: Limits peak voltage to ≤27.6 V at 109 A, protecting downstream PMICs and microcontrollers rated for 30 V absolute maximum.

Use Scenario: Shields analog front-end inputs of pressure/temperature sensors in motor drives from inductive switching noise.

IC Role / Device Role / Timing Role: Low-capacitance TVS connected across differential sensor lines (e.g., PT100 bridge) to suppress fast-rising EFT bursts.

Use Value: Sub-ns response and 27.6 V clamping prevent latch-up in precision op-amps and ADCs operating near 24 V supply rails.

Telecom DC Power Feeds Consumer Power Adapter Input Stage

Use Scenario: Protects PoE-powered equipment (e.g., IP cameras) from surges induced on 48 V DC input lines.

IC Role / Device Role / Timing Role: Unidirectional TVS installed at DC jack entry point, upstream of primary DC/DC stage.

Use Value: 3000 W PPPM rating handles telecom-grade lightning-induced surges (IEC 61000-4-5, 2 Ω source impedance).

Use Scenario: Guards AC-DC adapter primary-side rectifier output against mains transients and capacitor discharge spikes.

IC Role / Device Role / Timing Role: TVS placed across bulk capacitor to absorb energy from MOV failure or rectifier reverse recovery overshoot.

Use Value: 185 °C TJ rating ensures reliability during sustained high-ambient operation in enclosed adapters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar TVS diode applications.

Alternative Part Technical Difference Application Difference Selection Advice
SMAJ17A-E3/57TLower PPPM (400 W), same VWM/VBR range, SMA package (smaller footprint, higher RθJA = 110 °C/W)Not suitable for 3000 W load-dump events; limited to low-energy ESD and EFT onlySelect only when space-constrained and surge energy < 100 mJ
1.5KE18AThrough-hole DO-201 package, 1500 W PPPM, same VWM, higher VF (4.5 V), no AEC-Q101 qualificationLacks automotive qualification and thermal robustness; unsuitable for under-hood useUse only in non-automotive, cost-sensitive industrial designs with manual assembly

Compared with SMAJ17A-E3/57T and 1.5KE18A, the 3KASMC17AHE3/57T delivers 7.5× higher pulse power, AEC-Q101 validation, and superior thermal endurance - making it the sole choice for automotive-grade 12 V system protection where reliability and energy handling are non-negotiable.

Availability

3KASMC17AHE3/57T is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, telecom DC power feeds, and consumer power adapter input stages requiring stable component supply and long-term lifecycle continuity.

Supply support for 3KASMC17AHE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on high-reliability, high-power, and automotive-qualified components.

The 3KASMC series belongs to Vishay's PAR® (Protection Against Transients) family, engineered specifically for robust transient suppression in harsh automotive and industrial environments where AEC-Q101 compliance and 185 °C operation are mandatory.

FAQ

What is the clamping voltage of the 3KASMC17AHE3/57T at its rated peak pulse current?

The 3KASMC17AHE3/57T has a maximum clamping voltage (VC) of 27.6 V when subjected to its rated peak pulse current (IPPM) of 109 A using a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and guarantees that downstream circuitry sees no more than 27.6 V during a full 3000 W transient event, critical for safeguarding 30 V-rated ICs in automotive applications.

Is the 3KASMC17AHE3/57T qualified for automotive use?

Yes, the 3KASMC17AHE3/57T is AEC-Q101 qualified, having passed stress tests including high-temperature reverse bias (HTRB), temperature cycling, and ESD per the AEC-Q101 standard. Its 185 °C maximum junction temperature and DO-214AB package with MSL Level 1 rating further confirm its suitability for under-hood and transmission-control module applications.

What does the "HE3/57T" suffix indicate in 3KASMC17AHE3/57T?

The "HE3/57T" suffix denotes Vishay's packaging and revision coding: "HE3" identifies the base P/NHM3 variant (RoHS-compliant, AEC-Q101 qualified), while "57T" specifies the preferred package code for 7-inch plastic tape-and-reel delivery with 850 units per reel. This matches the ordering information in Document 89962.

Can the 3KASMC17AHE3/57T be used in bidirectional configurations?

No, the 3KASMC17AHE3/57T is unidirectional only, as explicitly stated in the datasheet features and electrical characteristics table. It must be oriented with the cathode (marked by color band) toward the protected line. For bidirectional protection, Vishay offers separate part numbers such as the 3KASMC17CA series.

What is the thermal resistance of the 3KASMC17AHE3/57T, and how does it affect PCB layout?

The 3KASMC17AHE3/57T has a typical junction-to-ambient thermal resistance (RθJA) of 77.5 °C/W when mounted on the minimum recommended pad layout per the datasheet. To maintain safe junction temperatures under continuous 6.0 W power dissipation, designers must provide adequate copper area and avoid thermal isolation - undersized pads or lack of thermal vias will cause excessive temperature rise beyond the 185 °C limit.

3KASMC17AHE3/57T Specifications

Product attributes
Attribute value
Manufacturer:
Vishay General Semiconductor - Diodes Division
Package/Case:
DO-214AB, SMC
Series:
PAR®
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
17V
Voltage - Breakdown (Min):
18.9V
Voltage - Clamping (Max) @ Ipp:
27.6V
Current - Peak Pulse (10/1000µs):
109A
Power - Peak Pulse:
3000W (3kW)
Power Line Protection:
No
Applications:
-
Capacitance @ Frequency:
-
Operating Temperature:
-65°C ~ 185°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
DO-214AB (SMCJ)

3KASMC17AHE3/57T FAQ

1.How can I place an order for 3KASMC17AHE3/57T through Aetrix?

Please submit a Request for Quotation (RFQ) for 3KASMC17AHE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 3KASMC17AHE3/57T reliable?

The price and inventory of 3KASMC17AHE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC17AHE3/57T is usually 5 days.

3.What payment methods are accepted for 3KASMC17AHE3/57T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC17AHE3/57T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 3KASMC17AHE3/57T?

3KASMC17AHE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 3KASMC17AHE3/57T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 3KASMC17AHE3/57T?

For technical support, including 3KASMC17AHE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC17AHE3/57T requirements.

6.How does Aetrix verify that 3KASMC17AHE3/57T is sourced from the original manufacturer or authorized distributors?

All 3KASMC17AHE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC17AHE3/57T meets industry standards.

7.What is the process for return or replacement of 3KASMC17AHE3/57T?

All 3KASMC17AHE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC17AHE3/57T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 3KASMC17AHE3/57T part is unused and in its original packaging.

Return procedure for 3KASMC17AHE3/57T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

3KASMC17AHE3/57T Tags

  • 3KASMC17AHE3/57T
  • 3KASMC17AHE3/57T PDF
  • 3KASMC17AHE3/57T Datasheet
  • 3KASMC17AHE3/57T Specifications
  • 3KASMC17AHE3/57T Images
  • Vishay General Semiconductor - Diodes Division
  • Vishay General Semiconductor - Diodes Division 3KASMC17AHE3/57T
  • Buy 3KASMC17AHE3/57T
  • 3KASMC17AHE3/57T Price
  • 3KASMC17AHE3/57T Distributor
  • 3KASMC17AHE3/57T Supplier
  • 3KASMC17AHE3/57T Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER