My Inquiry
My Account
Vishay General Semiconductor - Diodes Division 3KASMC20AHE3/57T
- Part No.:
- 3KASMC20AHE3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
3KASMC20AHE3/57T.pdf
- Description:
- TVS DIODE 20VWM 32.4VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:2,780
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
3KASMC20AHE3/57T from Vishay General Semiconductor is a unidirectional surface-mount PAR® Transient Voltage Suppressor (TVS) diode in DO-214AB (SMC) package, rated for 3000 W peak pulse power (10/1000 μs), 20 V stand-off voltage (VWM), and 32.4 V clamping voltage (VC) at 92.6 A IPPM. It operates up to TJ = 185 °C and is AEC-Q101 qualified for automotive-grade surge protection on power rails and signal lines.
For engineers reviewing the 3KASMC20AHE3/57T datasheet, 3KASMC20AHE3/57T pinout, 3KASMC20AHE3/57T application, or 3KASMC20AHE3/57T equivalent, key selection criteria include unidirectional clamping behavior, 20 V reverse stand-off, 32.4 V max clamping under 92.6 A surge, thermal resistance RθJA = 77.5 °C/W, and compliance with MSL Level 1 (260 °C reflow).
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low incremental surge resistance. Its junction design enables reliable operation up to 185 °C and meets AEC-Q101 stress test requirements for automotive electronics.
The device delivers precise clamping performance with 22.2–24.5 V breakdown voltage (VBR) at 1 mA test current and maintains ≤1.0 μA reverse leakage at 20 V (VWM) and ≤10 μA at TJ = 150 °C - critical for low-power sensor interface protection.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 20 V - maximum continuous reverse operating voltage before clamping begins |
| VBR (min/max) | 22.2 V / 24.5 V - breakdown occurs within this range at 1 mA, ensuring predictable turn-on threshold |
| VC @ IPPM | 32.4 V - clamping voltage measured at 92.6 A peak pulse current (10/1000 μs), limiting downstream voltage stress |
| PPPM | 3000 W - peak transient power handling capability per standard 10/1000 μs waveform |
| TJ max. | 185 °C - maximum junction temperature rating, enabling use in under-hood automotive environments |
| RθJA | 77.5 °C/W - thermal resistance from junction to ambient, defining derating requirements on standard PCB layout |
| AEC-Q101 | Qualified - validated for automotive reliability including HTRB, HTGB, TCT, and ESD testing per JESD22 standards |
Pinout & Package
Package: DO-214AB (SMC), surface-mount, matte tin-plated leads, RoHS-compliant, MSL Level 1 (260 °C peak reflow), UL 94 V-0 molding compound. Cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal during forward conduction | Connected to lower-potential side of protected circuit; defines unidirectional clamping direction |
| Cathode | Current exit terminal during forward conduction; marked with band | Connected to higher-potential rail (e.g., VBUS); clamps transients toward ground when voltage exceeds VBR |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier process ensures stable VBR and low leakage over temperature and lifetime |
| High-temperature capability | TJ = 185 °C rating supports placement near heat sources in engine control units and ADAS modules |
| Low clamping ratio | VC/VBR ≈ 1.36 (32.4 V / 23.8 V avg) minimizes overvoltage exposure to protected ICs during surge events |
| Fast response time | Sub-nanosecond turn-on enables effective suppression of ESD and fast-switching inductive transients |
| MSL Level 1 compliance | Allows single-pass reflow at 260 °C without moisture-induced damage, simplifying SMT manufacturing |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
Use Scenario: Protecting 24 V supply lines in body control modules against load dump and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between VBAT and GND to limit voltage excursions to ≤32.4 V. Use Value: Prevents latch-up or permanent damage to microcontrollers and CAN transceivers during ISO 7637-2 Pulse 5a events. |
Use Scenario: Shielding analog output lines (e.g., 4–20 mA current loop) in factory automation sensors from ESD and cable discharge. IC Role / Device Role / Timing Role: Standoff-clamping TVS connected across signal and return path to shunt transients before reaching precision ADC inputs. Use Value: Maintains signal integrity with <1.0 μA leakage at 20 V, avoiding offset errors in low-current measurement circuits. |
| Telecom DC Power Input Protection | Consumer Device USB Port Protection |
Use Scenario: Safeguarding -48 V telecom rectifier outputs from lightning-induced surges on outdoor cabinet feeds. IC Role / Device Role / Timing Role: High-energy TVS mounted at board edge to absorb 3000 W pulses before they propagate into DC/DC converters. Use Value: Withstands repeated 10/1000 μs surges while maintaining VWM = 20 V margin above nominal -48 V system (absolute value). |
Use Scenario: Adding secondary surge immunity to USB VBUS lines in portable speakers and smart home hubs exposed to user-handling ESD. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to GND, triggered only during overvoltage events on +5 V rail. Use Value: Clamps to 32.4 V before USB 2.0 PHY damage thresholds are exceeded, with no impact on normal 5 V operation due to tight VWM/VBR tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar TVS diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ20A | Lower PPPM (400 W), same DO-214AC (SMA) package, VWM = 20 V, VC = 32.4 V, but lower IPPM (12.3 A) | Suitable for lower-energy transients; not rated for AEC-Q101 or TJ = 185 °C | Select SMAJ20A only for cost-sensitive consumer applications where automotive qualification and 3000 W surge immunity are unnecessary. |
| SMCJ20A | Same DO-214AB (SMC) package and 3000 W rating, but VWM = 20 V, VC = 32.4 V, and AEC-Q101 qualified; differs in marking code and tape/reel packaging (e.g., SMCJ20AHE3/57T) | Functionally identical clamping performance and qualification; direct form-fit-function alternative with same thermal and electrical specs | SMCJ20A is a drop-in replacement for 3KASMC20AHE3/57T in new designs; verify reel code compatibility (57T) and date code traceability per OEM requirements. |
Compared with SMAJ20A and SMCJ20A, the 3KASMC20AHE3/57T offers identical clamping performance and AEC-Q101 qualification but distinguishes itself via Vishay's PAR® architecture-delivering tighter VBR tolerance (±5.5%) and lower leakage (<1.0 μA at VWM) than legacy SMCJ series, enhancing long-term reliability in high-temperature deployments.
Availability
3KASMC20AHE3/57T is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface protection, and telecom DC input protection requiring stable component supply, full traceability, and AEC-Q101 compliance.
Supply support for 3KASMC20AHE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on high-reliability, high-temperature, and automotive-qualified solutions.
The 3KASMCxxA family was designed specifically for robust transient suppression in harsh-environment automotive and industrial systems, combining PAR® technology with AEC-Q101 validation and extended temperature operation up to 185 °C.
FAQ
What is the clamping voltage of the 3KASMC20AHE3/57T under maximum surge conditions?
The 3KASMC20AHE3/57T exhibits a maximum clamping voltage (VC) of 32.4 V when subjected to its rated peak pulse current (IPPM) of 92.6 A using the standard 10/1000 μs waveform. This value is guaranteed per Vishay's datasheet (Document Number: 89962, Rev. 05-Mar-13) and represents the upper voltage limit imposed on protected circuitry during worst-case transient events.
Is the 3KASMC20AHE3/57T suitable for automotive applications?
Yes, the 3KASMC20AHE3/57T is AEC-Q101 qualified and rated for operation up to TJ = 185 °C, making it suitable for under-hood and chassis-mounted automotive applications including engine control units, ADAS cameras, and body electronics. Its DO-214AB package and MSL Level 1 rating further support automated SMT assembly in automotive production lines.
What does the "HE3/57T" suffix indicate in 3KASMC20AHE3/57T?
The "HE3" denotes Vishay's standard halogen-free, RoHS-compliant construction with matte tin-plated leads, while "57T" specifies the preferred packaging: 7-inch diameter plastic tape and reel containing 850 units. This ordering code aligns with Vishay's documented preferred P/N format in the datasheet's Ordering Information table.
How does the 3KASMC20AHE3/57T compare to standard SMAJ-series TVS diodes?
The 3KASMC20AHE3/57T delivers 3000 W peak pulse power in a DO-214AB package - seven times higher than the 400 W rating of SMAJ20A in the smaller DO-214AC (SMA) package. It also features tighter VBR tolerance, lower leakage, and AEC-Q101 qualification - attributes absent in standard SMAJ devices, which are intended for commercial-grade use only.
What is the thermal resistance of the 3KASMC20AHE3/57T, and how does it affect PCB layout?
The 3KASMC20AHE3/57T has a typical junction-to-ambient thermal resistance (RθJA) of 77.5 °C/W when mounted on the minimum recommended pad layout per Vishay's datasheet. To maintain safe junction temperatures under sustained power dissipation, designers must provide adequate copper area and avoid excessive trace length - especially critical in high-temperature automotive environments where ambient can exceed 105 °C.
3KASMC20AHE3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 20V
- Voltage - Breakdown (Min):
- 22.2V
- Voltage - Clamping (Max) @ Ipp:
- 32.4V
- Current - Peak Pulse (10/1000µs):
- 92.6A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
3KASMC20AHE3/57T FAQ
1.How can I place an order for 3KASMC20AHE3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for 3KASMC20AHE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3KASMC20AHE3/57T reliable?
The price and inventory of 3KASMC20AHE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC20AHE3/57T is usually 5 days.
3.What payment methods are accepted for 3KASMC20AHE3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC20AHE3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3KASMC20AHE3/57T?
3KASMC20AHE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3KASMC20AHE3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3KASMC20AHE3/57T?
For technical support, including 3KASMC20AHE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC20AHE3/57T requirements.
6.How does Aetrix verify that 3KASMC20AHE3/57T is sourced from the original manufacturer or authorized distributors?
All 3KASMC20AHE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC20AHE3/57T meets industry standards.
7.What is the process for return or replacement of 3KASMC20AHE3/57T?
All 3KASMC20AHE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC20AHE3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3KASMC20AHE3/57T part is unused and in its original packaging.
Return procedure for 3KASMC20AHE3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
3KASMC20AHE3/57T Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
