Vishay General Semiconductor - Diodes Division 3KASMC30HE3_A/I
- Part No.:
- 3KASMC30HE3_A/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
3KASMC30HE3_A/I.pdf
- Description:
- TVS DIODE 30VWM 53.5VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:5,110
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
3KASMC30HE3_A/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in DO-214AB (SMC) package, rated for 30 V stand-off voltage, 33.3–36.8 V breakdown at 1 mA, 48.4 V clamping voltage at 62 A peak pulse current, and 3000 W peak pulse power with 10/1000 µs waveform - deployed for automotive power line and sensor signal line surge protection.
For engineers reviewing the 3KASMC30HE3_A/I datasheet, 3KASMC30HE3_A/I pinout, 3KASMC30HE3_A/I application, or 3KASMC30HE3_A/I equivalent, this page delivers verified electrical specs, AEC-Q101 qualification status, thermal resistance (RθJA = 77.5 °C/W), junction temperature limit (TJ = 185 °C), and DO-214AB mechanical dimensions to support layout, reliability validation, and automotive-grade design-in.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology optimized for high-temperature stability and low incremental surge resistance. It delivers fast response time and excellent clamping performance under repetitive and non-repetitive transients induced by inductive switching or ESD events.
Rated for operation from –65 °C to +185 °C, it meets MSL Level 1 per J-STD-020 (260 °C peak reflow), supports 200 A IFSM (8.3 ms half-sine), and exhibits 1.0 µA max reverse leakage at VWM and 15 µA at TJ = 150 °C - confirming suitability for under-hood automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - maximum continuous reverse operating voltage before clamping begins |
| VBR (min/max) | 33.3 V / 36.8 V at IT = 1 mA - ensures reliable breakdown initiation within defined tolerance band |
| VC @ IPPM | 48.4 V at 62 A - clamping voltage limits downstream IC stress during 10/1000 µs surge |
| PPPM | 3000 W - peak pulse power handling capability defines transient energy absorption capacity |
| TJ max. | +185 °C - enables use in high-temperature automotive locations without derating penalties |
| RθJA | 77.5 °C/W - thermal resistance informs PCB pad layout and heatsinking requirements |
| AEC-Q101 | Qualified - validates reliability for automotive electronic systems per stress test standard |
Pinout & Package
Package: DO-214AB (SMC), surface-mount, matte tin-plated leads, cathode indicated by color band. Meets UL 94 V-0 flammability rating and JESD 201 Class 2 whisker resistance.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to protected circuit ground or low-side return path | Defines reference point for unidirectional clamping - must be tied to system ground plane for effective surge shunting |
| Cathode | Current exit terminal in forward bias; marked by color band; connected to protected line (e.g., power rail or signal) | Surge current flows from cathode to anode during overvoltage event - placement determines clamping polarity and protection direction |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier process ensures stable VBR drift < ±5 % over lifetime and temperature |
| High-temperature operation | TJ = 185 °C rating allows direct placement near power converters or engine control units without thermal derating |
| Clamping performance | Low VC/VBR ratio (~1.45) minimizes let-through voltage to safeguard 3.3 V/5 V logic interfaces |
| Surge robustness | 200 A IFSM (8.3 ms) supports repeated load-dump and jump-start events in 12 V automotive systems |
| Manufacturing compliance | MSL Level 1 and RoHS-compliant - eliminates moisture sensitivity concerns and enables standard SMT reflow |
Applications
| Automotive Power Line Protection | Engine Control Unit (ECU) Sensor Interface |
|---|---|
Use Scenario: Protecting 12 V battery-fed microcontroller power rails against ISO 7637-2 pulse 1, 2a, 3a/b, and load dump transients. IC Role / Device Role / Timing Role: Unidirectional TVS placed between VIN and GND to clamp surges before they reach LDO or MCU input pins. Use Value: 48.4 V clamping at 62 A prevents overvoltage damage to 36 V-rated input stages while maintaining AEC-Q101 qualification. |
Use Scenario: Safeguarding analog sensor inputs (e.g., MAP, TPS, O2) from ESD and inductive kickback in harsh under-hood environments. IC Role / Device Role / Timing Role: Low-capacitance TVS on signal lines to suppress transients without distorting millivolt-level sensor outputs. Use Value: 1.0 µA leakage at 30 V ensures minimal DC loading on precision ratiometric sensors across temperature range. |
| Industrial Motor Drive Control | Telecom Power Supply Input Stage |
Use Scenario: Suppressing commutation spikes on gate driver supply rails in BLDC inverters operating up to 10 kHz PWM frequency. IC Role / Device Role / Timing Role: Fast-response TVS parallel to bulk capacitor to absorb high-di/dt transients generated by MOSFET switching. Use Value: 3000 W peak power rating handles repetitive 10/1000 µs surges without degradation over >100,000 cycles. |
Use Scenario: Front-end protection of AC/DC and DC/DC converters in telecom base station power modules exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Primary-level TVS on 48 V or 54 V intermediate bus to limit surge propagation into downstream regulation stages. Use Value: 185 °C junction rating supports operation inside sealed, convection-limited enclosures without forced cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ30A | Same DO-214AA (SMB) package; lower PPPM = 600 W; VC = 48.4 V at 12.5 A | Limited to lower-energy transients; not qualified to AEC-Q101 | Select when cost-sensitive industrial designs require basic surge suppression without automotive qualification. |
| SMCJ30A | Same DO-214AB (SMC) package; identical PPPM = 3000 W; VC = 48.4 V at 62 A; AEC-Q101 qualified | Functionally identical clamping and surge rating; differs only in marking code and packaging suffix | Valid alternative if 3KASMC30HE3_A/I lead time constraints exist - verify reel code compatibility with SMT line. |
Compared with SMBJ30A and SMCJ30A, the 3KASMC30HE3_A/I provides identical surge robustness and automotive qualification in the same SMC footprint, but with Vishay's optimized passivation for improved long-term VBR stability under thermal cycling.
Availability
3KASMC30HE3_A/I is available at Aetrix Electronics and suitable for automotive power line protection, ECU sensor interface hardening, and industrial motor drive control requiring stable component supply, full traceability, and AEC-Q101 compliance.
Supply support for 3KASMC30HE3_A/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, high-temperature operation, and automotive qualification.
The 3KASMC series belongs to Vishay's PAR® family of high-power TVS diodes, engineered specifically for demanding automotive and industrial surge environments where 185 °C operation and AEC-Q101 validation are mandatory.
FAQ
What is the clamping voltage of the 3KASMC30HE3_A/I at its rated peak pulse current?
The 3KASMC30HE3_A/I has a maximum clamping voltage (VC) of 48.4 V at 62 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuits during surge events. The 3KASMC30HE3_A/I maintains this clamping performance across its full operating temperature range, supporting robust protection in automotive and industrial applications.
Is the 3KASMC30HE3_A/I qualified for automotive applications?
Yes, the 3KASMC30HE3_A/I is AEC-Q101 qualified, confirming its reliability for automotive electronic systems. It meets stress tests including high-temperature operating life, temperature cycling, and humidity bias HAST. Its 185 °C maximum junction temperature and MSL Level 1 rating further validate suitability for under-hood and powertrain applications. The 3KASMC30HE3_A/I is explicitly listed in Vishay's AEC-Q101 qualified product matrix.
What package type does the 3KASMC30HE3_A/I use, and what are its key mechanical features?
The 3KASMC30HE3_A/I uses the DO-214AB (SMC) surface-mount package, with overall dimensions of 7.11 mm × 6.22 mm × 2.62 mm (L × W × H). Key mechanical features include matte tin-plated leads compliant with J-STD-002 and JESD 22-B102, UL 94 V-0 molding compound, and cathode identification via molded color band. The 3KASMC30HE3_A/I requires the recommended minimum pad layout per Vishay specification to ensure thermal and mechanical reliability.
How does the 3KASMC30HE3_A/I compare to standard SMBJ-series TVS diodes in surge capability?
The 3KASMC30HE3_A/I delivers 3000 W peak pulse power (10/1000 µs), five times higher than the 600 W rating of SMBJ30A in the smaller DO-214AA (SMB) package. Its 62 A IPPM and 48.4 V VC enable protection against severe transients like ISO 16750-2 load dump, whereas SMBJ30A is limited to lower-energy events. The 3KASMC30HE3_A/I also achieves AEC-Q101 qualification, unlike most SMBJ variants.
What is the maximum reverse leakage current of the 3KASMC30HE3_A/I at elevated temperature?
At TJ = 150 °C, the 3KASMC30HE3_A/I exhibits a maximum reverse leakage current (ID) of 15 µA at VWM = 30 V. At 25 °C, leakage is ≤1.0 µA. This controlled leakage ensures minimal power loss and signal integrity impact in always-on automotive modules such as body control units or telematics systems. The 3KASMC30HE3_A/I maintains these values across its full –65 °C to +185 °C operating range.
3KASMC30HE3_A/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 53.5V
- Current - Peak Pulse (10/1000µs):
- 56.1A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
3KASMC30HE3_A/I FAQ
1.How can I place an order for 3KASMC30HE3_A/I through Aetrix?
Please submit a Request for Quotation (RFQ) for 3KASMC30HE3_A/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3KASMC30HE3_A/I reliable?
The price and inventory of 3KASMC30HE3_A/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC30HE3_A/I is usually 5 days.
3.What payment methods are accepted for 3KASMC30HE3_A/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC30HE3_A/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3KASMC30HE3_A/I?
3KASMC30HE3_A/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3KASMC30HE3_A/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3KASMC30HE3_A/I?
For technical support, including 3KASMC30HE3_A/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC30HE3_A/I requirements.
6.How does Aetrix verify that 3KASMC30HE3_A/I is sourced from the original manufacturer or authorized distributors?
All 3KASMC30HE3_A/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC30HE3_A/I meets industry standards.
7.What is the process for return or replacement of 3KASMC30HE3_A/I?
All 3KASMC30HE3_A/I units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC30HE3_A/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3KASMC30HE3_A/I part is unused and in its original packaging.
Return procedure for 3KASMC30HE3_A/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
3KASMC30HE3_A/I Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

