Vishay General Semiconductor - Diodes Division 3KASMC33AHE3_B/H
- Part No.:
- 3KASMC33AHE3_B/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
3KASMC33AHE3_B/H.pdf
- Description:
- TVS DIODE 33VWM 53.3VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:3,306
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
3KASMC33AHE3_B/H from Vishay General Semiconductor is a unidirectional surface-mount PAR® transient voltage suppressor (TVS) designed for high-energy surge protection in automotive and industrial power rails. It delivers 3000 W peak pulse power (10/1000 μs), clamps at 53.3 V under 56.3 A surge current, and operates up to 185 °C junction temperature - enabling robust protection of MOSFETs and ICs against inductive switching transients in engine control units and power converters.
For engineers reviewing the 3KASMC33AHE3_B/H datasheet, 3KASMC33AHE3_B/H pinout, 3KASMC33AHE3_B/H application, or 3KASMC33AHE3_B/H equivalent, key selection criteria include its 33 V stand-off voltage, AEC-Q101 qualification, SMC (DO-214AB) package compatibility with automated assembly, and verified thermal stability under sustained high-temperature operation.
Technical Context
This TVS diode uses passivated anisotropic rectifier technology to achieve low incremental surge resistance and excellent clamping linearity across its 36.7–40.6 V breakdown range. Its unidirectional polarity and 1.0 mA test current ensure precise triggering during positive-going transients on DC power lines.
The device is rated for 200 A non-repetitive forward surge current (8.3 ms half-sine) and exhibits a +0.091 %/°C temperature coefficient of VBR, enabling predictable voltage shift over its full -65 °C to +185 °C operating range - critical for under-hood automotive environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 33 V - maximum continuous reverse operating voltage before leakage exceeds 1.0 μA; defines safe DC rail margin for 36 V nominal systems. |
| VBR (min/typ/max) | 36.7 / 38.7 / 40.6 V at 1.0 mA - precise breakdown threshold ensures reliable turn-on without false triggering. |
| VC @ IPPM | 53.3 V at 56.3 A - clamping voltage limits downstream component stress during 3000 W transient events. |
| PPPM | 3000 W (10/1000 μs) - enables protection against severe ISO 7637-2 Pulse 1/2b/5a surges in automotive ECUs. |
| TJ max | +185 °C - supports placement near high-power components in engine bay or motor drive modules. |
| AEC-Q101 | Qualified - validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing per JESD47. |
| Package | SMC (DO-214AB) - industry-standard surface-mount outline with 7.11 mm body length and 3.20 mm minimum cathode band width. |
Pinout & Package
Package: SMC (DO-214AB), molded epoxy case meeting UL 94 V-0; matte tin-plated leads compliant with J-STD-002 and JESD 22-B102; cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Cathode (banded end) | Anode of internal PN junction | Connected to protected circuit's higher-potential node (e.g., +12 V rail); absorbs positive transients toward ground. |
| Anode (non-banded end) | Cathode of internal PN junction | Connected to system ground or low-impedance return path; completes clamping loop during surge events. |
Key Features
| Feature | Design Value |
|---|---|
| Junction passivation | Optimized anisotropic rectifier process reduces leakage drift and improves long-term stability at 150 °C. |
| MSL Level 1 | Rated for reflow up to 260 °C peak - eliminates moisture sensitivity concerns during standard SMT assembly. |
| Low Rsurge | Typical incremental surge resistance < 0.3 Ω - minimizes clamping voltage overshoot during fast-rising transients. |
| RoHS & halogen-free option | HE3 suffix denotes RoHS-compliant construction; HM3 suffix adds halogen-free molding compound. |
| Fast response time | < 1.0 ps intrinsic junction response - ensures clamping activation before sensitive downstream logic or gate drivers are damaged. |
Applications
| Automotive Engine Control Unit (ECU) | Industrial Motor Drive DC Bus |
|---|---|
Use Scenario: Protection of microcontroller power supply and CAN transceiver VCC rails against load dump and alternator ripple. IC Role / Device Role: Unidirectional TVS placed between 12 V input and chassis ground to clamp transients above 33 V. Use Value: Withstands 3000 W pulses while maintaining 53.3 V clamping - prevents latch-up or burnout in 3.3 V/5 V logic powered from regulated 12 V supplies. |
Use Scenario: Safeguarding IGBT gate driver ICs and bootstrap capacitors from inductive kickback during PWM switching. IC Role / Device Role: Mounted across DC bus (e.g., 48 V or 72 V) to suppress commutation spikes before they reach gate drive circuitry. Use Value: 185 °C rating allows direct placement near heat-generating power stages; 56.3 A surge current capacity handles repetitive motor stall events. |
| Telecom Power Supply Input | Consumer Appliance Main Board |
Use Scenario: Input-stage protection for AC/DC front-end converters exposed to lightning-induced surges on PoE or AC mains inputs. IC Role / Device Role: First-line defense in series with fuse and common-mode choke; shunts differential-mode surges to ground. Use Value: 3000 W rating meets IEC 61000-4-5 Level 4 requirements; DO-214AB footprint enables compact layout with minimal trace inductance. |
Use Scenario: Protecting MCU reset lines and communication interfaces (UART, I²C) from ESD and relay coil back-EMF in washing machine control boards. IC Role / Device Role: Localized TVS on 3.3 V or 5 V signal rails adjacent to connectors and electromechanical switches. Use Value: Low 1.0 μA leakage at 33 V preserves battery life in standby mode; AEC-Q101 qualification ensures field reliability beyond consumer-grade expectations. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ33A-E3/5A (Vishay) | Lower PPPM (400 W), smaller SMA package, same VWM/VBR range but reduced surge current (11.8 A). | Suitable only for low-energy signal-line protection; insufficient for power rail clamping in automotive or motor drives. | Select when board space is constrained and surge energy is limited to < 100 mJ. |
| SMCJ33A (Littelfuse) | Identical SMC package, 3000 W rating, but VC = 53.3 V at 56.3 A - matches 3KASMC33AHE3_B/H clamping performance. | Same AEC-Q101 qualification and thermal specs; differs only in marking and tape/reel packaging configuration. | Drop-in alternative where dual-sourcing or distributor availability favors Littelfuse logistics. |
Compared with SMAJ33A-E3/5A and SMCJ33A, the 3KASMC33AHE3_B/H offers identical clamping performance to SMCJ33A but with Vishay's proprietary passivated junction for enhanced high-temperature leakage stability - making it preferred for extended-life automotive modules operating continuously at >125 °C ambient.
Availability
3KASMC33AHE3_B/H is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drives, telecom power supplies, and consumer appliance main boards requiring stable component supply with AEC-Q101 compliance and high-temperature reliability.
Supply support for 3KASMC33AHE3_B/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in high-reliability diodes, MOSFETs, and optoelectronics for automotive, industrial, and computing markets.
The 3KASMCxxA family was engineered specifically for AEC-Q101-compliant transient suppression in harsh-environment power electronics - emphasizing thermal robustness, surge consistency, and solder-reflow resilience over cost-optimized consumer-grade alternatives.
FAQ
What is the exact stand-off voltage (VWM) of the 3KASMC33AHE3_B/H?
The 3KASMC33AHE3_B/H has a nominal stand-off voltage VWM of 33 V, meaning it remains in high-impedance blocking state for reverse voltages ≤33 V while exhibiting ≤1.0 μA leakage current at 25 °C. This value is guaranteed across the full operating temperature range and aligns with its designation as a "33A" variant in the 3KASMCxxA series.
Is the 3KASMC33AHE3_B/H qualified for automotive applications?
Yes, the 3KASMC33AHE3_B/H is AEC-Q101 qualified, as confirmed by Vishay's documentation (Document Number 88480, Revision 19-Jan-2024). Its qualification covers temperature cycling, high-temperature reverse bias (HTRB), and electrostatic discharge testing - validating suitability for under-hood and transmission-control module deployments.
What does the "HE3_B/H" suffix indicate in 3KASMC33AHE3_B/H?
The "HE3" suffix denotes RoHS-compliant construction with matte tin-plated leads; "B/H" specifies packaging in 7-inch diameter plastic tape and reel with 850 units per reel. This ordering code also confirms MSL Level 1 rating and compliance with JESD 201 Class 2 whisker testing requirements.
How does the 3KASMC33AHE3_B/H compare to the 3KASMC33AHM3_B/H variant?
The 3KASMC33AHE3_B/H and 3KASMC33AHM3_B/H share identical electrical and thermal specifications, including VWM, VBR, PPPM, and AEC-Q101 qualification. The sole difference is that HM3 uses halogen-free molding compound, whereas HE3 is RoHS-compliant but not halogen-free - both meet UL 94 V-0 flammability standards.
What is the maximum clamping voltage (VC) of the 3KASMC33AHE3_B/H under surge conditions?
The 3KASMC33AHE3_B/H clamps to a maximum of 53.3 V when subjected to its rated peak pulse current of 56.3 A (10/1000 μs waveform), as specified in Vishay's Electrical Characteristics table. This clamping voltage is measured at TA = 25 °C and remains stable across temperature due to its +0.091 %/°C VBR coefficient.
3KASMC33AHE3_B/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- PAR®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 36.7V
- Voltage - Clamping (Max) @ Ipp:
- 53.3V
- Current - Peak Pulse (10/1000µs):
- 56.3A
- Power - Peak Pulse:
- 3000W (3kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -65°C ~ 185°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMC)
3KASMC33AHE3_B/H FAQ
1.How can I place an order for 3KASMC33AHE3_B/H through Aetrix?
Please submit a Request for Quotation (RFQ) for 3KASMC33AHE3_B/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3KASMC33AHE3_B/H reliable?
The price and inventory of 3KASMC33AHE3_B/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3KASMC33AHE3_B/H is usually 5 days.
3.What payment methods are accepted for 3KASMC33AHE3_B/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3KASMC33AHE3_B/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3KASMC33AHE3_B/H?
3KASMC33AHE3_B/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3KASMC33AHE3_B/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3KASMC33AHE3_B/H?
For technical support, including 3KASMC33AHE3_B/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3KASMC33AHE3_B/H requirements.
6.How does Aetrix verify that 3KASMC33AHE3_B/H is sourced from the original manufacturer or authorized distributors?
All 3KASMC33AHE3_B/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3KASMC33AHE3_B/H meets industry standards.
7.What is the process for return or replacement of 3KASMC33AHE3_B/H?
All 3KASMC33AHE3_B/H units undergo pre-shipment inspection (PSI). If there is an issue with 3KASMC33AHE3_B/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3KASMC33AHE3_B/H part is unused and in its original packaging.
Return procedure for 3KASMC33AHE3_B/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
3KASMC33AHE3_B/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

