Vishay General Semiconductor - Diodes Division 5KP110AHE3_A/C
- Part No.:
- 5KP110AHE3_A/C
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- P600, Axial
- Datasheet:
-
5KP110AHE3_A/C.pdf
- Description:
- TVS DIODE
- Quantity:
- Payment:

- Shipping:

Inventory:6,122
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
5KP110AHE3_A/C from Vishay General Semiconductor is a unidirectional TransZORB® transient voltage suppressor (TVS) diode in P600 package, designed for high-energy surge clamping on power rails and signal lines. It features 110 V stand-off voltage (VWM), 122–135 V breakdown voltage (VBR) at 5 mA, 177 V maximum clamping voltage (VC) at 28.2 A peak pulse current, and 5000 W peak pulse power rating with 10/1000 μs waveform - used to protect MOSFETs, ICs, and sensor interfaces in automotive and industrial power supplies.
For engineers reviewing the 5KP110AHE3_A/C datasheet, 5KP110AHE3_A/C pinout, 5KP110AHE3_A/C application, or 5KP110AHE3_A/C equivalent, key selection criteria include clamping performance under 10/1000 μs surges, AEC-Q101 qualification for automotive use, unidirectional polarity, P600 package thermal handling, and compatibility with 8.3 ms half-sine surge withstand per IEC 61000-4-5.
Technical Context
This TVS diode operates as a voltage-clamped crowbar element during overvoltage transients, leveraging a glass-passivated P600 junction to achieve low incremental surge resistance and sub-nanosecond response time. Its unidirectional structure enables DC-biased rail protection without reverse conduction leakage concerns above VWM.
The device is rated for 175 °C maximum junction temperature and derates linearly above 25 °C ambient, supporting operation in engine bay and industrial control environments. It meets JESD 22-B106 solderability (275 °C, 10 s) and JESD 201 Class 2 whisker resistance (HE3 suffix), confirming robustness for automated assembly.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 110 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC bias margin for protected circuitry. |
| VBR (min/max) | 122 V / 135 V at 5 mA - Confirmed breakdown threshold range; ensures predictable turn-on across production lot and temperature. |
| VC @ IPPM | 177 V at 28.2 A - Clamped voltage during 10/1000 μs surge; determines maximum stress imposed on downstream components. |
| PPPM | 5000 W - Peak pulse power handling with 10/1000 μs waveform; supports IEC 61000-4-5 Level 4 surge immunity testing. |
| TJ max. | 175 °C - Maximum junction temperature; enables reliable operation in under-hood automotive and high-ambient industrial settings. |
| Polarity | Unidirectional - Cathode-marked device; suitable for DC power rail protection where reverse conduction must be blocked. |
| AEC-Q101 | Qualified - Validated for automotive electronics per stress test requirements including HTGB, HTRB, and TCT. |
Pinout & Package
Package: P600 molded epoxy case with matte tin-plated leads; UL 94 V-0 rated; 9.5 mm body length; lead spacing 9.1 mm; cathode indicated by color band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes clamping path during positive transients on cathode side. |
| Cathode | High-side surge input terminal | Connected to protected line (e.g., 12 V rail); conducts when voltage exceeds VBR, shunting surge energy to ground. |
Key Features
| Feature | Design Value |
|---|---|
| 5000 W peak pulse power | Enables single-device protection against severe lightning-induced surges (IEC 61000-4-5) without parallel staging. |
| AEC-Q101 qualification | Validates reliability for automotive power modules, body control units, and ADAS sensor power inputs. |
| 177 V clamping at 28.2 A | Limits voltage overshoot below 180 V during 10/1000 μs transients - critical for safeguarding 150 V-rated MOSFETs and gate drivers. |
| P600 thermal mass | Supports 8.0 W steady-state dissipation on infinite heatsink at TL = 75 °C, enabling passive thermal management in space-constrained designs. |
| Low incremental surge resistance | Minimizes VC rise under high di/dt events, improving clamping precision and reducing stress on downstream silicon. |
Applications
| Automotive Power Rail Protection | Industrial DC Power Supply Output |
|---|---|
|
Use Scenario: Protecting 12 V/24 V battery-fed ECUs from load dump and alternator transients per ISO 7637-2 Pulse 5a. IC Role / Device Role / Timing Role: Voltage-clamping TVS placed between power input and ground, activated within nanoseconds of overvoltage onset. Use Value: Withstands 5000 W surges while clamping to ≤177 V, preventing latch-up or destruction of microcontrollers and CAN transceivers. |
Use Scenario: Safeguarding output stage of 48 V telecom rectifiers against induced lightning surges and switching spikes. IC Role / Device Role / Timing Role: Crowbar-style transient suppressor across output terminals, diverting energy before upstream fuses open. Use Value: Enables resettable protection architecture - system resumes operation after transient clears, unlike sacrificial fuses. |
| Sensor Interface Surge Suppression | MOSFET Gate Driver Input Protection |
|
Use Scenario: Shielding analog front-end inputs of automotive pressure/temperature sensors connected to long harnesses. IC Role / Device Role / Timing Role: Unidirectional TVS on sensor supply line (VDD), referenced to local ground plane. Use Value: Low leakage (<2 μA at 110 V) avoids signal offset; fast response preserves integrity of millivolt-level sensor outputs. |
Use Scenario: Preventing gate oxide damage in high-side N-channel MOSFET drivers exposed to inductive kickback. IC Role / Device Role / Timing Role: Clamping diode from driver output to ground, limiting gate-source voltage excursion during turn-off. Use Value: 177 V clamping ensures gate voltage stays within ±20 V absolute max rating of common logic-level MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ110AHE3/A | Lower PPPM (600 W), smaller SMB package, same VWM/VBR range, AEC-Q101 qualified. | Targeted at board-level signal line protection; insufficient for bulk power rail surge handling. | Select when space-constrained layout and lower-energy transients (e.g., ESD, contact discharge) dominate. |
| 1.5KE110A | Same VWM/VBR/VC specs, 5000 W rating, DO-201 package, not AEC-Q101 qualified. | Lacks automotive qualification; thermal resistance higher than P600; no HE3 whisker rating. | Acceptable for industrial/commercial power supplies where AEC-Q101 is not mandated and manual assembly is used. |
Compared with SMBJ110AHE3/A and 1.5KE110A, the 5KP110AHE3_A/C uniquely combines AEC-Q101 qualification, P600 thermal mass for high-repetition surges, and full 5000 W capability - making it the only choice for automotive power rail protection requiring both reliability and energy-handling headroom.
Availability
5KP110AHE3_A/C is available at Aetrix Electronics and suitable for automotive electronic control units, industrial DC power supplies, sensor interface circuits, and MOSFET gate driver protection requiring stable component supply and long-term lifecycle support.
Supply support for 5KP110AHE3_A/C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, TVS devices, and optoelectronics with emphasis on reliability and automotive-grade validation.
The 5KP series was engineered specifically for high-energy transient suppression in automotive and industrial power systems, prioritizing clamping accuracy, surge repetition endurance, and AEC-Q101 compliance over compactness.
FAQ
What is the clamping voltage of the 5KP110AHE3_A/C under a standard 10/1000 μs surge?
The 5KP110AHE3_A/C clamps to a maximum of 177 V when subjected to its rated peak pulse current of 28.2 A with a 10/1000 μs waveform. This value is measured per JEDEC standards and represents the upper limit of voltage seen by protected circuitry during such an event - critical for ensuring downstream components remain within their absolute maximum ratings.
Is the 5KP110AHE3_A/C suitable for automotive applications?
Yes, the 5KP110AHE3_A/C is AEC-Q101 qualified and explicitly rated for automotive use. Its construction - including HE3 suffix (JESD 201 Class 2 whisker resistance), P600 thermal robustness, and 175 °C junction rating - meets requirements for engine control modules, body electronics, and ADAS power domains per ISO 16750 and ISO 7637-2.
What does the "HE3_A/C" suffix mean in 5KP110AHE3_A/C?
The "HE3" denotes RoHS-compliant, AEC-Q101-qualified construction with JESD 201 Class 2 whisker resistance; "A/C" specifies the revision code and packaging format - 13-inch paper tape and reel, 800 units per reel, with P600 package and cathode band marking per Vishay's ordering convention.
How does the 5KP110AHE3_A/C differ from the 1.5KE110A in practical design?
The 5KP110AHE3_A/C uses a P600 package offering superior thermal dissipation (8.0 W vs. ~3.0 W for DO-201) and is AEC-Q101 qualified, whereas the 1.5KE110A is DO-201 packaged and lacks automotive qualification. Both share identical VWM/VBR/VC specs, but only the 5KP110AHE3_A/C supports sustained surge duty cycles in automotive environments.
Can the 5KP110AHE3_A/C be used in bidirectional configurations?
No, the 5KP110AHE3_A/C is unidirectional only, with cathode marked by a band. For bidirectional transient suppression, Vishay offers separate part numbers like 5KP110CA; using two unidirectional devices back-to-back is not recommended due to mismatched VBR tolerances and increased leakage risk.
5KP110AHE3_A/C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- P600, Axial
- Series:
- TransZorb®
- Packaging:
- Bulk
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 110V
- Voltage - Breakdown (Min):
- 122V
- Voltage - Clamping (Max) @ Ipp:
- 177V
- Current - Peak Pulse (10/1000µs):
- 28.2A
- Power - Peak Pulse:
- 5000W (5kW)
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Through Hole
- Supplier Device Package:
- P600
5KP110AHE3_A/C FAQ
1.How can I place an order for 5KP110AHE3_A/C through Aetrix?
Please submit a Request for Quotation (RFQ) for 5KP110AHE3_A/C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 5KP110AHE3_A/C reliable?
The price and inventory of 5KP110AHE3_A/C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 5KP110AHE3_A/C is usually 5 days.
3.What payment methods are accepted for 5KP110AHE3_A/C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 5KP110AHE3_A/C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 5KP110AHE3_A/C?
5KP110AHE3_A/C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 5KP110AHE3_A/C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 5KP110AHE3_A/C?
For technical support, including 5KP110AHE3_A/C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 5KP110AHE3_A/C requirements.
6.How does Aetrix verify that 5KP110AHE3_A/C is sourced from the original manufacturer or authorized distributors?
All 5KP110AHE3_A/C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 5KP110AHE3_A/C meets industry standards.
7.What is the process for return or replacement of 5KP110AHE3_A/C?
All 5KP110AHE3_A/C units undergo pre-shipment inspection (PSI). If there is an issue with 5KP110AHE3_A/C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 5KP110AHE3_A/C part is unused and in its original packaging.
Return procedure for 5KP110AHE3_A/C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
5KP110AHE3_A/C Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

