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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 62-0063PBF

Name: 62-0063PBF
Brand: Infineon Technologies
SKU: 62-0063PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 62-0063PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: 62-0063PBF.pdf

Description:: MOSFET N-CH 12V 15A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7476PbF from Infineon Technologies (formerly International Rectifier) is a 12 V, 15 A, 8.0 mΩ single N-channel Trench MOSFET in SO-8 package, optimized for synchronous buck converter high-side and low-side switching in 3.3 V/5 V point-of-load power stages. It features ultra-low gate impedance, fully characterized avalanche capability (160 mJ), and fast switching (tr = 29 ns, tf = 8.3 ns) for high-frequency DC-DC conversion in netcom and computing applications.

For engineers reviewing the IRF7476PbF datasheet, IRF7476PbF pinout, IRF7476PbF application, or IRF7476PbF equivalent, key selection criteria include R_DS(on) @ 4.5 V (8.0 mΩ), Q_g (26–40 nC), avalanche energy rating (160 mJ), thermal resistance R_θJA (50 °C/W), and SO-8 lead-free compliance - all critical for thermally constrained, high-efficiency POL designs.

Technical Context

This MOSFET employs Trench-based silicon process technology to achieve low on-resistance with enhanced gate charge control. Its 8.0 mΩ R_DS(on) at V_GS = 4.5 V enables efficient conduction in 3.3 V gate-driven topologies, while its 26–40 nC total gate charge supports high-frequency PWM operation up to several MHz.

The device integrates a robust body diode with t_rr = 54–82 ns and Q_rr = 59–90 nC, enabling reliable synchronous rectification without external Schottky diodes. Its 160 mJ single-pulse avalanche energy and 12 A I_AR rating allow safe operation under unclamped inductive switching conditions typical in buck converter freewheeling phases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - Maximum drain-source blocking voltage; defines use in ≤12 V input rails only.
R_DS(on) @ V_GS = 4.5 V	8.0 mΩ - Enables <150 mW conduction loss at 15 A; critical for 3.3 V gate drive compatibility.
I_D @ T_A = 25°C	15 A - Continuous current rating at room ambient; derates to 12 A at 70°C case temperature.
Q_g	26–40 nC - Total gate charge determines driver strength requirement and switching loss trade-off.
E_AS	160 mJ - Single-pulse avalanche energy; ensures reliability during transient overvoltage events in buck converters.
R_θJA	50 °C/W - Junction-to-ambient thermal resistance on standard PCB; sets maximum power dissipation limit at 2.5 W.
t_r/t_f	29 ns / 8.3 ns - Rise/fall times at I_D = 12 A; enables >1 MHz switching with controlled EMI.

Pinout & Package

IRF7476PbF is housed in a surface-mount SO-8 (Small Outline-8) package with exposed drain pads for thermal enhancement. The package conforms to EIA-481/EIA-541 standards and supports automated pick-and-place assembly.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4	Drain (D)	Four parallel drain terminals connected internally; primary current path and thermal conduction path to PCB copper.
5	Gate (G)	Control terminal; requires low-impedance 3.3 V/5 V driver due to 26–40 nC Q_g.
6, 7, 8	Source (S)	Three parallel source terminals; forms return path for load current and reference for gate drive.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	8.0 mΩ - Reduces conduction loss by >30% vs. legacy 12 V MOSFETs in 3.3 V gate-drive systems.
Fully characterized avalanche	160 mJ E_AS, 12 A I_AR - Eliminates need for external snubbers in synchronous buck freewheeling phase.
Low gate charge	26–40 nC Q_g - Enables use of low-power gate drivers and reduces switching losses at ≥500 kHz.
Fast body diode recovery	t_rr = 54–82 ns, Q_rr = 59–90 nC - Minimizes reverse recovery loss and shoot-through risk in synchronous rectification.
Lead-free SO-8 package	RoHS-compliant, JEDEC-standard footprint - Ensures drop-in replacement in existing 8-pin power layouts.

Applications

Server VRM Power Stage

Network Switch POL Converter

Use Scenario: High-current, multi-phase 12 V input → 1.0 V/100 A output VRM supplying CPU core power.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500–1000 kHz PWM frequency.

Use Value: 8.0 mΩ R_DS(on) minimizes I²R loss at 100 A; SO-8 thermal design supports 2.5 W dissipation per phase under airflow-limited chassis conditions.

Use Scenario: Compact 5 V input → 3.3 V/20 A point-of-load regulator on network switch line card.

IC Role / Device Role / Timing Role: High-side main switch in single-phase buck converter with integrated controller.

Use Value: 4.5 V gate threshold enables direct drive from 5 V controller outputs; 160 mJ avalanche rating prevents failure during hot-swap transients.

Portable SSD Power Management

Industrial PLC I/O Module Supply

Use Scenario: Dual-rail 5 V → 3.3 V/1.8 V power delivery for NVMe SSD controller and NAND flash.

IC Role / Device Role / Timing Role: Secondary low-side switch in cascaded buck stage handling 12 A peak load.

Use Value: Fast 8.3 ns fall time suppresses cross-conduction loss; Q_rr < 90 nC avoids voltage spikes during light-load discontinuous mode.

Use Scenario: 24 V industrial bus → 5 V/3 A isolated auxiliary supply for digital I/O logic.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck pre-regulator feeding isolated DC-DC module.

Use Value: -55 °C to +150 °C junction range ensures operation in sealed enclosures; SO-8 footprint simplifies layout in space-constrained DIN-rail modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7852DP-T1-GE3	R_DS(on) = 7.5 mΩ @ 4.5 V; Q_g = 32 nC; SO-8 package; 20 V V_DS	Higher V_DS rating allows 15 V input margin but increases gate drive capacitance slightly.	Preferred where system-level overvoltage tolerance exceeds 12 V or where lower R_DS(on) justifies marginal Q_g increase.
DMN3025LSD-13	R_DS(on) = 2.5 mΩ @ 4.5 V; dual N-channel; 30 V V_DS; 8-pin SO-8	Dual configuration enables half-bridge integration; higher V_DS and lower R_DS(on) suit 24 V intermediate bus designs.	Select when designing compact half-bridge POL stages or requiring >12 V input headroom with minimal footprint impact.

Compared with Si7852DP-T1-GE3 and DMN3025LSD-13, IRF7476PbF offers optimal balance of 12 V-specific optimization, proven avalanche ruggedness, and lowest gate charge among 12 V SO-8 MOSFETs - making it ideal for cost-sensitive, thermally constrained 3.3 V/5 V POL applications where strict input voltage limits apply.

Availability

IRF7476PbF is available at Aetrix Electronics and suitable for server VRMs, network switch POL converters, portable SSD power management, and industrial PLC I/O module supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRF7476PbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRF7476PbF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low-voltage, high-current power delivery is essential.

FAQ

Is IRF7476PbF suitable for 3.3 V gate drive applications?

Yes. With a gate threshold voltage (V_GS(th)) of 0.6–1.9 V and guaranteed R_DS(on) of 8.0 mΩ at V_GS = 4.5 V, IRF7476PbF is explicitly characterized for 3.3 V and 5 V logic-level gate drive. Its low Q_g (26–40 nC) further ensures fast turn-on with standard microcontroller GPIO or dedicated low-V_GS drivers.

What is the maximum continuous drain current at 70°C ambient?

The datasheet specifies I_D = 12 A at T_A = 70°C with V_GS = 10 V. This rating assumes standard SO-8 mounting on FR-4 PCB with 1-inch² copper; actual current must be derated based on measured board temperature and airflow. At T_C = 70°C, maximum I_D remains 12 A per Figure 9.

Does IRF7476PbF have an integrated Schottky diode?

No. IRF7476PbF uses a monolithic p-n junction body diode inherent to the MOSFET structure. Its reverse recovery characteristics (t_rr = 54–82 ns, Q_rr = 59–90 nC) are fully specified and optimized for synchronous rectification - no external Schottky is required, but it is not a separate integrated Schottky device.

Can IRF7476PbF replace older IRF7476 in existing designs?

Yes. IRF7476PbF is the lead-free, RoHS-compliant version of IRF7476, with identical electrical specifications, pinout, package dimensions, and thermal performance. The "PbF" suffix denotes lead-free termination; no layout or firmware changes are needed for drop-in replacement in legacy designs.

62-0063PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 40 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2550 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

62-0063PBF FAQ

1.How can I place an order for 62-0063PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 62-0063PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 62-0063PBF reliable?

The price and inventory of 62-0063PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 62-0063PBF is usually 5 days.

3.What payment methods are accepted for 62-0063PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 62-0063PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 62-0063PBF?

62-0063PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 62-0063PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 62-0063PBF?

For technical support, including 62-0063PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 62-0063PBF requirements.

6.How does Aetrix verify that 62-0063PBF is sourced from the original manufacturer or authorized distributors?

All 62-0063PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 62-0063PBF meets industry standards.

7.What is the process for return or replacement of 62-0063PBF?

All 62-0063PBF units undergo pre-shipment inspection (PSI). If there is an issue with 62-0063PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 62-0063PBF part is unused and in its original packaging.

Return procedure for 62-0063PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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