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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 62-0203PBF

Name: 62-0203PBF
Brand: Infineon Technologies
SKU: 62-0203PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 62-0203PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: 62-0203PBF.pdf

Description:: MOSFET P-CH 12V 16A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

62-0203PBF from International Rectifier is a P-channel enhancement-mode HEXFET® Power MOSFET in SO-8 package, rated for -12 V V_DS, 7 mΩ R_DS(on) at V_GS = -4.5 V, and -16 A continuous drain current at T_A = 25°C. It integrates a low-loss body diode and supports battery disconnect, load switching, and power OR-ing in portable electronics.

For engineers reviewing the 62-0203PBF datasheet, 62-0203PBF pinout, 62-0203PBF application, or 62-0203PBF equivalent, key selection criteria include guaranteed R_DS(on) at low gate drive (-2.5 V), thermal resistance (50°C/W), pulsed current capability (-65 A), and SO-8 leadframe-enhanced thermal performance for high-density PCB layouts.

Technical Context

This MOSFET operates as a low-side switch with fully specified gate threshold voltage (-0.4 to -0.9 V) and negative temperature coefficient for R_DS(on). Its 91 nC total gate charge and 25 nC Miller charge support moderate-speed switching in DC-DC load management circuits.

The device features an integral reverse-biased p-n junction body diode with V_SD = -1.2 V at -2.5 A and t_rr = 97–145 ns, enabling synchronous rectification and bidirectional current handling in compact power rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-12 V - Maximum blocking voltage for low-voltage battery-side switching
R_DS(on)	7 mΩ @ V_GS = -4.5 V - Enables <100 mW conduction loss at 16 A
I_D (cont)	-16 A @ T_A = 25°C - Supports high-current load control without external heatsink
Q_g	91 nC - Determines gate driver strength requirement for 100–500 kHz switching
R_θJA	50 °C/W - Limits power dissipation to 2.5 W on standard 1-in² Cu board
V_GS(th)	-0.4 to -0.9 V - Ensures turn-on with logic-level gate drivers (e.g., 1.8 V/3.3 V I/O)
t_rr	97–145 ns - Defines minimum dead-time in synchronous buck or OR-ing configurations

Pinout & Package

62-0203PBF uses a modified SO-8 surface-mount package with enhanced thermal leadframe for improved power density and multi-die compatibility. The package supports vapor phase, infrared, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5	Drain (D)	Common high-current output node; internally paralleled for low R_DS(on)
6	Gate (G)	Control input; requires ≤±8 V drive; 91 nC charge must be sourced/sunk
7, 8	Source (S)	Power return path and body diode anode; tied to system ground in low-side switch

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7 mΩ @ -4.5 V enables >95% efficiency in 3.3 V–12 V load switches
Logic-level gate drive	V_GS(th) down to -0.4 V ensures reliable turn-on from 1.8 V microcontroller GPIO
Enhanced SO-8 thermal design	Custom leadframe reduces R_θJA by ~20% vs. standard SO-8, supporting higher sustained current
Integrated body diode	V_SD = -1.2 V @ -2.5 A allows use in OR-ing and reverse-polarity protection without external diode

Applications

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent shutdown in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side P-channel MOSFET acting as active fuse and polarity guard.

Use Value: 7 mΩ R_DS(on) limits voltage drop to <112 mV at 16 A, preserving battery runtime and thermal margin.

Use Scenario: Hot-swap control between USB-C source and sink during power role swap.

IC Role / Device Role / Timing Role: Bidirectional load switch managing VBUS path with integrated body diode conduction.

Use Value: 97 ns reverse recovery time enables clean transitions under 3 A dynamic load without shoot-through risk.

Power OR-ing Controller

Industrial 24 V DC Load Switch

Use Scenario: Redundant 5 V/12 V supply selection in embedded controllers with automatic failover.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET providing low-loss forward conduction and reverse isolation.

Use Value: -12 V V_DS rating safely handles 12 V rail transients while maintaining <10 mΩ effective on-resistance.

Use Scenario: Remote-controlled enable/disable of solenoids, relays, or LED arrays in factory automation.

IC Role / Device Role / Timing Role: High-current, low-heat solid-state replacement for mechanical relays.

Use Value: 2.5 W power dissipation at 25°C ambient allows continuous -16 A operation on standard FR4 without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si7157DP-T1-GE3	R_DS(on) = 8.5 mΩ @ -4.5 V; Q_g = 72 nC; SO-8 package	Lower gate charge improves switching efficiency but slightly higher conduction loss	Preferred when gate drive strength is limited and switching frequency exceeds 300 kHz
DMG1012T-7	R_DS(on) = 12 mΩ @ -4.5 V; V_DS = -20 V; SOT-23-6 package	Higher voltage rating but smaller package and higher R_DS(on); not SO-8 drop-in	Selected for space-constrained designs where 20 V headroom justifies 70% higher conduction loss

Compared with Si7157DP-T1-GE3 and DMG1012T-7, the 62-0203PBF delivers the lowest R_DS(on) in SO-8 format for 12 V systems, making it optimal for thermally constrained, high-current load switching where board area and thermal budget are prioritized over ultra-high-frequency operation.

Availability

62-0203PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery switches, power OR-ing controllers, and industrial 24 V DC load switches requiring stable component supply and long-term manufacturability.

Supply support for 62-0203PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing applications.

The HEXFET® Power MOSFET product line was engineered for minimal conduction and switching losses in battery-powered and high-density power management systems, emphasizing low R_DS(on), fast switching, and robust thermal performance in surface-mount packages.

FAQ

What is the maximum safe operating voltage for 62-0203PBF in continuous DC operation?

The 62-0203PBF has a rated V_DS of -12 V, meaning it is designed for continuous operation up to -12 V drain-to-source voltage. Exceeding this value risks avalanche breakdown. Transient spikes must remain within the SOA curve limits shown in Figure 8 of the datasheet, especially under pulse conditions with duty cycle and pulse width constraints.

Can 62-0203PBF be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage range (-0.4 V to -0.9 V) and low gate charge (91 nC) allow full enhancement with 3.3 V logic-level drive when used in low-side configuration. However, ensure the GPIO can sink ≥10 mA peak during turn-on to achieve acceptable rise time; a dedicated gate driver is recommended for >100 kHz switching.

Does 62-0203PBF include a body diode, and what are its key ratings?

Yes - it integrates a monolithic p-n junction body diode with V_SD = -1.2 V at -2.5 A and reverse recovery time t_rr = 97–145 ns. This diode supports freewheeling and reverse-current blocking in OR-ing and hot-swap applications, eliminating need for external Schottky diodes in many 12 V systems.

How does the thermal performance of 62-0203PBF compare to standard SO-8 MOSFETs?

Its customized leadframe reduces R_θJA to 50°C/W (vs. typical 62–65°C/W for standard SO-8), enabling 2.5 W dissipation at 25°C ambient. This 20% improvement supports higher continuous current in space-constrained layouts, verified via JEDEC-standard 1-in² copper test board measurements per datasheet page 2.

62-0203PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 16A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 91 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 8676 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

62-0203PBF FAQ

1.How can I place an order for 62-0203PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 62-0203PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 62-0203PBF reliable?

The price and inventory of 62-0203PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 62-0203PBF is usually 5 days.

3.What payment methods are accepted for 62-0203PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 62-0203PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 62-0203PBF?

62-0203PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 62-0203PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 62-0203PBF?

For technical support, including 62-0203PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 62-0203PBF requirements.

6.How does Aetrix verify that 62-0203PBF is sourced from the original manufacturer or authorized distributors?

All 62-0203PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 62-0203PBF meets industry standards.

7.What is the process for return or replacement of 62-0203PBF?

All 62-0203PBF units undergo pre-shipment inspection (PSI). If there is an issue with 62-0203PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 62-0203PBF part is unused and in its original packaging.

Return procedure for 62-0203PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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