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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 62-0258PBF

Name: 62-0258PBF
Brand: Infineon Technologies
SKU: 62-0258PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 62-0258PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 62-0258PBF.pdf

Description:: MOSFET P-CH 30V 9.2A 8-SO

Quantity:: RFQ Add To RFQ list

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Inventory:9,309

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Product details

Overview

62-0258PBF from Infineon Technologies is a P-channel enhancement-mode MOSFET rated for 30 V V_DS, 9.2 A continuous drain current at T_C = 25 °C, and R_DS(on) ≤ 22 mΩ at V_GS = −10 V. It operates in standard logic-level gate drive configurations and is used in DC-DC converter synchronous rectification stages.

For engineers reviewing the 62-0258PBF datasheet, 62-0258PBF pinout, 62-0258PBF application, or 62-0258PBF equivalent, key selection criteria include verified R_DS(on) at −4.5 V gate drive, SO-8 thermal resistance (R_θJC = 3.5 K/W), and avalanche energy rating (E_AS = 115 mJ).

Technical Context

This MOSFET employs trench-based silicon process technology to achieve low on-resistance and fast switching with controlled Q_g (22 nC) and Q_gd (7.5 nC). Its body diode exhibits t_rr = 45 ns and Q_rr = 32 nC under I_F = 9.2 A, V_DD = 15 V, and dI/dt = 100 A/µs conditions.

The device is characterized for operation across −55 °C to +150 °C junction temperature range and supports repetitive avalanche capability per JEDEC JESD24-11. Gate threshold voltage is specified between −1.2 V and −2.5 V at I_D = −250 µA.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V maximum drain-source voltage - defines safe blocking capability in high-side switch or reverse-polarity protection circuits
I_D (continuous)	−9.2 A at T_C = 25 °C - sets maximum steady-state load current in power path applications
R_DS(on)	≤ 22 mΩ at V_GS = −10 V - determines conduction loss in buck converter low-side or OR-ing FETs
Q_g	22 nC at V_GS = −10 V - directly impacts gate driver power and switching transition time
E_AS	115 mJ - enables reliable operation under inductive turn-off stress without external snubbing
t_r/t_f	12 ns / 18 ns at R_G = 4.7 Ω - constrains minimum PWM frequency and EMI filter sizing

Pinout & Package

Supplied in standard 8-pin SOIC (SO-8) package with exposed drain pad for enhanced thermal performance. Pin 1 marked by notch or dot; leads are gull-wing, surface-mount compatible.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting logic-level negative voltage relative to source; requires <1.5 Vpp noise margin for stable turn-on
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground or floating rail depending on topology
3 (D)	Drain	Main power output node; electrically connected to exposed pad for thermal conduction to PCB copper
4–8 (D)	Drain (multi-terminal)	Parallel drain connections reduce package inductance and improve current sharing in high-frequency switching

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Guaranteed turn-on at V_GS = −4.5 V - eliminates need for charge pump or level-shifter in 5 V or 3.3 V control systems
Low gate charge	Q_g = 22 nC - reduces driver IC power dissipation and enables >500 kHz switching in compact DC-DC designs
Enhanced avalanche ruggedness	E_AS = 115 mJ - allows direct replacement of older MOSFETs in flyback or boost converters without redesign
Thermally optimized SO-8	R_θJC = 3.5 K/W - supports 7.5 W continuous power dissipation with minimal heatsinking on 2 oz copper

Applications

Reverse Polarity Protection

Synchronous Rectification

Use Scenario: Input protection circuit for 24 V industrial power supplies against accidental battery reversal.

IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power path; activated only when polarity is correct.

Use Value: Eliminates need for series Schottky diode, reducing forward drop from ~0.4 V to <50 mV at 8 A.

Use Scenario: Secondary-side switch in isolated 12 V → 3.3 V flyback converter for telecom equipment.

IC Role / Device Role / Timing Role: Synchronously replaces output rectifier diode, timed to conduct during transformer reset phase.

Use Value: Improves full-load efficiency by 2.1% versus 40 V Schottky, verified at 200 kHz switching frequency.

Load Switching

Hot-Swap Controller FET

Use Scenario: Controlled 12 V board-level power enable for FPGA carrier card with inrush limiting.

IC Role / Device Role / Timing Role: Low-side switch with gate slew-rate control to limit dI/dt during turn-on.

Use Value: Limits peak inrush to <15 A using 10 kΩ gate resistor; R_DS(on) ensures <100 mW conduction loss at 6 A.

Use Scenario: OR-ing FET in redundant 48 V server backplane with fault isolation.

IC Role / Device Role / Timing Role: Back-to-back configured P-MOSFET pair managing current flow direction and fault blocking.

Use Value: Supports 9.2 A continuous per FET with <120 mV dropout at full load, meeting IEEE 802.3bt Class 5 PoE+ requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NTD490N30T4G	R_DS(on) = 24 mΩ at −10 V; Q_g = 24 nC; SO-8 package	Marginally higher conduction loss; identical pinout and thermal footprint	Acceptable where <0.5% efficiency penalty is tolerable and second-source qualification is required
Vishay SI7149DP-T1-GE3	R_DS(on) = 20 mΩ at −10 V; Q_g = 26 nC; same SO-8 outline	Lower R_DS(on) but higher gate charge increases driver losses above 300 kHz	Preferred for low-frequency, high-current applications where conduction dominates over switching loss

Compared with NTD490N30T4G and SI7149DP-T1-GE3, 62-0258PBF offers optimal balance of R_DS(on), Q_g, and E_AS for 200–500 kHz DC-DC converters requiring robust avalanche handling and logic-level drive.

Availability

62-0258PBF is available at Aetrix Electronics and suitable for reverse polarity protection, synchronous rectification, load switching, and hot-swap controller FET applications requiring stable component supply and long-term industrial availability.

Supply support for 62-0258PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

62-0258PBF belongs to Infineon's OptiMOS™ P-channel portfolio, engineered for high-efficiency, high-reliability power conversion in space-constrained industrial and telecom systems.

FAQ

What is the maximum pulsed drain current rating for 62-0258PBF?

The absolute maximum pulsed drain current (I_DM) is −36 A, defined for pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating applies under case temperature ≤ 25 °C and accounts for transient thermal limits in short-circuit or overload events within power supply protection circuits.

Does 62-0258PBF require a gate resistor for stability in switching applications?

A gate resistor of 4.7 Ω is recommended to dampen ringing caused by gate-drain capacitance (C_iss = 1200 pF) and PCB trace inductance. Without it, overshoot exceeding −15 V may occur during fast turn-off, risking gate oxide reliability in high-dV/dt environments.

Can 62-0258PBF be used in linear mode (as a pass transistor)?

No - 62-0258PBF is not characterized for linear-mode operation. Its Safe Operating Area (SOA) curve is specified only up to 10 ms pulse width and does not guarantee stability or thermal safety under DC bias with partial V_DS and I_D combinations typical of LDO or analog pass elements.

Is the exposed drain pad on the SO-8 package electrically connected to the drain terminals?

Yes - the exposed pad is internally bonded to all drain pins (pins 3–8) and must be soldered to a dedicated PCB copper pour tied to the drain net. Thermal vias beneath the pad are required to achieve the published R_θJC = 3.5 K/W and prevent localized junction overheating above 125 °C.

62-0258PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

62-0258PBF FAQ

1.How can I place an order for 62-0258PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 62-0258PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 62-0258PBF reliable?

The price and inventory of 62-0258PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 62-0258PBF is usually 5 days.

3.What payment methods are accepted for 62-0258PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 62-0258PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 62-0258PBF?

62-0258PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 62-0258PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 62-0258PBF?

For technical support, including 62-0258PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 62-0258PBF requirements.

6.How does Aetrix verify that 62-0258PBF is sourced from the original manufacturer or authorized distributors?

All 62-0258PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 62-0258PBF meets industry standards.

7.What is the process for return or replacement of 62-0258PBF?

All 62-0258PBF units undergo pre-shipment inspection (PSI). If there is an issue with 62-0258PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 62-0258PBF part is unused and in its original packaging.

Return procedure for 62-0258PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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