Infineon Technologies 64-0007

Overview

IRF640N from International Rectifier is a 200V, 18A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, featuring 0.15Ω R_DS(on) at V_GS = 10V, 150W power dissipation, and fully avalanche-rated operation up to 175°C junction temperature. It serves as a high-efficiency switching element in DC-DC converters, motor drives, and AC/DC SMPS primary-side switches.

For engineers reviewing the IRF640N datasheet, IRF640N pinout, IRF640N application, or IRF640N equivalent, key selection criteria include its 200V V_DSS, 0.15Ω on-resistance, 72A pulsed drain current, fast 10ns turn-on delay, and robust 247mJ single-pulse avalanche energy rating under unclamped inductive load conditions.

Technical Context

This MOSFET employs fifth-generation HEXFET process technology to achieve low specific on-resistance and high cell density. Its gate threshold voltage (2.0–4.0V) enables standard 10V logic-level drive, while total gate charge (67nC) and Miller charge (33nC) support efficient high-frequency switching up to several hundred kHz.

The device integrates a fast-recovery body diode with 167–251ns reverse recovery time and 929–1394nC reverse recovery charge at 11A, enabling reliable synchronous rectification and freewheeling in hard-switched topologies. Thermal resistance of 1.0°C/W (junction-to-case) supports direct heatsink mounting for high-power operation.

Key Specifications

Pinout & Package

TO-220AB package: vertical through-hole mounting, isolated tab (drain-connected), 3-pin configuration with integral heatsink interface. Standard JEDEC outline with 10.54mm × 15.24mm footprint and 4.69mm height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP20NM20 and IXTP18N20P, the IRF640N offers superior avalanche energy handling (247mJ) and tighter gate threshold uniformity, making it more suitable for non-ZVS hard-switched industrial power stages where transient robustness is critical.

Availability

IRF640N is available at Aetrix Electronics and suitable for switch-mode power supplies, DC motor drives, uninterruptible power supplies, and induction heating systems requiring stable component supply and long-term industrial availability.

Supply support for IRF640N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing applications.

The HEXFET® Power MOSFET product line was engineered for high-power switching efficiency, thermal reliability, and ruggedness in demanding commercial and industrial power conversion systems.

FAQ

What is the maximum continuous drain current for IRF640N at 100°C case temperature?

The IRF640N supports 13A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220AB package and silicon die; operation above this current requires active cooling or pulse-width limitation to maintain junction temperature below 175°C.

Does IRF640N have a built-in body diode, and what are its key parameters?

Yes, IRF640N integrates a parasitic p-n junction body diode between source and drain. Key parameters include 1.3V forward voltage at 11A and 25°C, 167–251ns reverse recovery time, and 929–1394nC reverse recovery charge under specified test conditions (I_F = 11A, di/dt = 100A/µs).

Can IRF640N be used in parallel configurations, and what design considerations apply?

Yes, IRF640N is designed for ease of paralleling due to positive temperature coefficient of R_DS(on), which promotes current sharing. Critical considerations include matched gate drive impedance, symmetrical PCB layout to minimize loop inductance, and individual gate resistors (typically 5–10Ω) to damp oscillations and ensure simultaneous turn-on/turn-off.

What is the recommended gate resistor value for typical 100kHz switching in a half-bridge application?

A 5.1Ω gate resistor is recommended for 100kHz half-bridge operation with IRF640N, balancing switching speed (to limit losses) and EMI suppression. This value achieves ~10ns turn-on delay and ~5.5ns fall time while damping ringing caused by gate-drain capacitance and PCB inductance, as validated in IR's application note AN-994.