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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 64-0055PBF

Name: 64-0055PBF
Brand: Infineon Technologies
SKU: 64-0055PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 64-0055PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 64-0055PBF.pdf

Description:: MOSFET N-CH 60V 160A TO220AB

Quantity:: RFQ Add To RFQ list

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Inventory:7,602

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Product details

Overview

64-0055PBF from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 60 V V_DS, 160 A continuous drain current at T_C = 25°C, and R_DS(on) ≤ 3.0 mΩ at V_GS = 10 V. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the 64-0055PBF datasheet, 64-0055PBF pinout, 64-0055PBF application, or 64-0055PBF equivalent, key selection criteria include its low on-resistance at 10 V gate drive, SOA-rated pulsed current capability, and thermal performance in forced-air-cooled industrial power stages.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, optimized for high-efficiency switching in 48 V input systems. Its gate charge Q_g is 105 nC (typ.) and output charge Q_oss is 270 nC (typ.) at V_DS = 25 V, enabling fast turn-on/turn-off with moderate gate driver strength.

The device features avalanche-rated ruggedness (E_AS = 520 mJ at T_J = 25°C), integrated body diode with t_rr = 65 ns (typ.), and specified safe operating area up to 10 ms pulse width - supporting reliable operation under transient overload and inductive switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage in off-state; suitable for 48 V bus systems with 20 % margin.
I_D (continuous)	160 A at T_C = 25°C - Requires heatsinking for sustained operation above 80 A at 70°C case temperature.
R_DS(on)	≤ 3.0 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 18 A RMS in 12 V output stage of 1 kW LLC converter.
Q_g	105 nC (typ.) - Determines minimum gate driver peak current (~2 A for 50 ns rise time) and switching energy loss.
E_AS	520 mJ at T_J = 25°C - Supports single-pulse inductive energy absorption without failure in motor phase-leg short-circuit events.
t_rr	65 ns (typ.) - Limits reverse recovery loss in synchronous rectification; enables >200 kHz operation with soft-switching control.

Pinout & Package

64-0055PBF uses the standard TO-220AB package with isolated tab, 3-pin through-hole mounting, and thermal pad attached to drain. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	Control terminal; requires 10 V nominal drive for full enhancement; Miller plateau at ~4.5 V.
Pin 2 (center/tab)	Drain	Main high-side current path; electrically connected to metal tab - must be insulated from heatsink unless referenced to system ground.
Pin 3 (right)	Source	Reference node for gate drive; carries full load current; layout must minimize source inductance to suppress ringing.

Key Features

Feature	Design Value
OptiMOS™ 5 process	Enables 3.0 mΩ R_DS(on) at 60 V while maintaining robust avalanche rating and fast switching.
Enhancement-mode operation	Zero gate current in steady state; compatible with standard TTL/CMOS logic-level drivers when used with gate resistor network.
100 % UIS tested	Each unit validated for unclamped inductive switching stress - critical for motor control reliability.
Lead-free and RoHS compliant	Meets EU Directive 2011/65/EU; Pb-free plating on leads and tab supports lead-free reflow and wave soldering processes.

Applications

Server VRM Output Stage

Industrial BLDC Inverter Phase Leg

Use Scenario: High-density 48 V–12 V buck converter delivering up to 200 A to CPU/GPU core rails.

IC Role / Device Role / Timing Role: Synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve efficiency above 90 %.

Use Value: 3.0 mΩ R_DS(on) cuts rectifier loss by >65 % vs. 40 V Schottky, enabling smaller heatsink and higher power density.

Use Scenario: 3-phase inverter driving 5–10 kW permanent-magnet motor in CNC spindle or conveyor system.

IC Role / Device Role / Timing Role: Low-side switch in each half-bridge leg, commutated at 8–16 kHz with dead-time control.

Use Value: 160 A I_D rating and 520 mJ E_AS ensure fault tolerance during motor stall and regenerative braking transients.

Telecom 48 V DC-DC Converter

EV Onboard Charger Primary Switch

Use Scenario: Isolated forward or LLC converter converting -48 V telecom supply to +12 V for base station control cards.

IC Role / Device Role / Timing Role: Primary-side active clamp switch handling repetitive 60 V, 50 A pulses at 250 kHz.

Use Value: Low Q_g (105 nC) and Q_oss (270 nC) reduce gate drive loss and improve light-load efficiency over competing 60 V MOSFETs.

Use Scenario: 6.6 kW AC/DC stage using interleaved PFC + dual-phase LLC topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant tank output stage.

Use Value: Fast t_rr (65 ns) minimizes reverse recovery loss during zero-voltage switching transitions, improving full-load efficiency by 0.4–0.6 %.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STMicroelectronics STP160N6F6	R_DS(on) = 2.8 mΩ (lower), Q_g = 120 nC (higher), TO-220FP package (smaller footprint, lower thermal mass)	Higher gate drive loss; less suitable for high-frequency (>300 kHz) hard-switched topologies	Prefer for space-constrained 48 V VRMs where thermal design allows reduced heatsink size.
Vishay SiHB16N60E	R_DS(on) = 3.2 mΩ (slightly higher), E_AS = 410 mJ (lower), TO-220AB package identical	Reduced single-pulse avalanche margin; not recommended for motor phase-leg short-circuit protection	Acceptable for fixed-frequency DC-DC where inductive stress is limited and cost sensitivity is high.

Compared with STP160N6F6 and SiHB16N60E, 64-0055PBF offers best balance of low R_DS(on), moderate Q_g, and industry-leading E_AS - making it preferred for industrial motor drives and telecom power where both efficiency and ruggedness are mandatory.

Availability

64-0055PBF is available at Aetrix Electronics and suitable for server VRMs, industrial BLDC inverters, telecom DC-DC converters, and EV onboard charger designs requiring stable component supply and long-term manufacturability.

Supply support for 64-0055PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global R&D and wafer fabrication facilities.

64-0055PBF belongs to the OptiMOS™ 5 product line, engineered for high-efficiency, high-current switching in 12–48 V industrial and computing power supplies.

FAQ

Is 64-0055PBF suitable for logic-level gate drive?

No. 64-0055PBF requires ≥10 V gate-source voltage for full enhancement and specified R_DS(on). Its threshold voltage V_GS(th) is 2.0–4.0 V, but conduction resistance rises sharply below 4.5 V. A dedicated 12 V gate driver or level-shifter is required for reliable operation in 3.3 V or 5 V control systems.

What is the maximum allowable case temperature for continuous 160 A operation?

160 A is rated only at T_C = 25°C with infinite heatsink. At T_C = 70°C, the continuous current drops to 115 A per Infineon's SOA curve. Derating is linear between 25°C and 125°C case temperature; operation above 125°C case violates absolute maximum ratings.

Does 64-0055PBF have integrated ESD protection on the gate?

Yes. The device includes on-chip gate oxide protection diodes rated for ±2 kV HBM per JESD22-A114. However, external gate resistors (≥10 Ω) and TVS clamping remain recommended in high-noise motor drive or automotive environments to prevent cumulative gate oxide degradation.

Can 64-0055PBF replace older OptiMOS™ 3 or 4 devices in existing designs?

Yes - with verification. Pinout and package are identical to previous generations, and R_DS(on) is lower. However, gate charge and output capacitance differ; layout parasitics and gate driver strength must be rechecked to avoid overshoot or slow switching. Thermal interface and heatsink retention force should also be confirmed for mechanical compatibility.

64-0055PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: -

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 160A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4520 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: -

64-0055PBF FAQ

1.How can I place an order for 64-0055PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 64-0055PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 64-0055PBF reliable?

The price and inventory of 64-0055PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 64-0055PBF is usually 5 days.

3.What payment methods are accepted for 64-0055PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 64-0055PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 64-0055PBF?

64-0055PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 64-0055PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 64-0055PBF?

For technical support, including 64-0055PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 64-0055PBF requirements.

6.How does Aetrix verify that 64-0055PBF is sourced from the original manufacturer or authorized distributors?

All 64-0055PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 64-0055PBF meets industry standards.

7.What is the process for return or replacement of 64-0055PBF?

All 64-0055PBF units undergo pre-shipment inspection (PSI). If there is an issue with 64-0055PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 64-0055PBF part is unused and in its original packaging.

Return procedure for 64-0055PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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