Infineon Technologies 64-2028

Overview

64-2028 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 55 V V_DS, 75 A continuous drain current at T_C = 25 °C, and R_DS(on) ≤ 6.8 mΩ at V_GS = 10 V. It serves as a high-current synchronous rectifier or main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the 64-2028 datasheet, 64-2028 pinout, 64-2028 application, or 64-2028 equivalent, key selection criteria include its low on-resistance at 10 V gate drive, thermal performance in surface-mount power stages, and suitability for 48 V industrial power supplies and BLDC motor controllers.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering reduced switching losses via optimized gate charge (Q_g = 52 nC typ.) and output charge (Q_oss = 195 nC typ.). Its body diode exhibits t_rr = 52 ns and Q_rr = 110 nC under hard-switched conditions.

The device supports standard logic-level gate drive (V_GS(th) = 2.0–4.0 V), enabling direct interface with 3.3 V or 5 V microcontrollers without level-shifting. Its SOA is characterized up to 100 µs pulse width with T_C = 25 °C.

Key Specifications

Pinout & Package

D2PAK (TO-263) surface-mount package with copper-exposed drain pad for enhanced thermal transfer; 3-pin configuration (G, D, S) with drain connected to tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP75NF55 and SiR626DP, 64-2028 delivers optimal balance of low R_DS(on), moderate Q_g, and proven D2PAK thermal reliability-making it preferred for industrial motor drives and server VRMs requiring long-term solder-joint integrity.

Availability

64-2028 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, automotive EPS systems, and telecom DC-DC modules requiring stable component supply across multi-year production cycles.

Supply support for 64-2028 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

64-2028 belongs to the OptiMOS™ 5 product line, engineered for high-efficiency, high-current switching in 24–60 V power conversion systems targeting industrial automation and next-generation computing infrastructure.

FAQ

What is the maximum pulsed drain current (I_DM) for 64-2028?

The 64-2028 specifies I_DM = 300 A at T_C = 25 °C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating applies only under strictly controlled thermal conditions and is not intended for continuous operation. Designers must verify SOA compliance using the normalized transient thermal impedance curve in the official Infineon datasheet DS-64-2028-v02.

Does 64-2028 support 5 V gate drive in logic-level applications?

Yes-64-2028 has a gate threshold voltage V_GS(th) range of 2.0–4.0 V, enabling full enhancement with 5 V gate drive. However, R_DS(on) increases to ≤ 12 mΩ at V_GS = 5 V, resulting in ~75% higher conduction loss versus 10 V drive. For optimal efficiency, 10 V drive is recommended.

Is the exposed drain pad on the D2PAK package electrically isolated?

No-the exposed copper pad on the bottom of the D2PAK package is internally connected to the drain terminal. It must be soldered to a dedicated PCB copper pour tied to the drain net and thermally coupled to a heatsink or internal ground plane. Electrical isolation requires insulating thermal interface material between the pad and heatsink.

What is the recommended PCB layout for minimizing switching oscillation in high-frequency applications?

Minimize loop area between source, gate, and drain paths: place gate resistor close to the gate pin, use Kelvin source connection for gate driver feedback, and route high-current paths over solid ground/power planes. A 1.2 mm thick FR-4 board with ≥2 oz copper on inner layers and dedicated 10 mm² drain pour reduces parasitic inductance to <2 nH, suppressing ringing above 100 MHz.