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Infineon Technologies 64-2105PBF

Part No.:
64-2105PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
Aetrix64-2105PBF.pdf
Description:
MOSFET N-CH 40V 75A TO262
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,064

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Product details

Overview

64-2105PBF from Vishay Siliconix is a 40 V, 180 A (silicon-limited), N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package with 2.7 mΩ typical RDS(on), 175°C maximum junction temperature, and rated for repetitive avalanche operation. It serves as a high-current, low-loss main switch in DC-DC converters, motor drives, and UPS systems.

For engineers reviewing the 64-2105PBF datasheet, 64-2105PBF pinout, 64-2105PBF application, or 64-2105PBF equivalent, key selection factors include its 2.7 mΩ on-resistance at VGS = 10 V, 100 nC total gate charge, 175°C thermal rating, and body diode recovery time of 28–42 ns under specified conditions.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss while maintaining robust switching performance. Its 175°C TJ(max) enables operation in thermally constrained industrial environments, and its 100 nC Qg supports efficient gate drive design at high-frequency PWM up to 100 kHz.

The device integrates a fast-recovery body diode (trr = 28–42 ns, Qrr = 34–51 nC) and is characterized for unclamped inductive switching with EAS = 480 mJ (tested) and 710 mJ (thermally limited). Repetitive avalanche capability is validated per AN-1005 guidelines.

Key Specifications

ParameterValue and Actual Design Meaning
VBRDSS40 V - Maximum blocking voltage before avalanche onset; defines safe DC bus voltage margin in 24–36 V systems.
RDS(on) typ.2.7 mΩ @ VGS = 10 V, TJ = 25°C - Enables ≤0.49 W conduction loss at 140 A, critical for high-efficiency power stages.
ID (silicon)180 A @ TC = 25°C - Sets peak current capability in short-duration pulse applications like motor stall or surge handling.
Qg max.150 nC - Determines gate driver power requirement and switching loss contribution in hard-switched topologies.
trr28–42 ns - Limits reverse recovery-related shoot-through risk and EMI generation during synchronous rectification.
TJ(max)175°C - Allows sustained operation in sealed enclosures or high-ambient industrial settings without derating below 120 A.

Pinout & Package

64-2105PBF is housed in a TO-220AB package with isolated tab (drain-connected), standard lead spacing, and screw-mount compatibility. Thermal resistance RθJC is 0.75°C/W, enabling direct heatsink mounting with thermal grease.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main current return path to DC busElectrically connected to metal tab; requires isolation washer if heatsink is grounded.
SourceReference node for gate drive and current sensingLow-inductance connection point for shunt resistors and gate driver return path.
GateControl terminal for channel modulationHigh-impedance input requiring <150 nC charge; sensitive to ringing-needs local RC snubber.

Key Features

FeatureDesign Value
Ultra-low RDS(on)2.7 mΩ typ. reduces I²R losses by >35% vs. legacy 40 V MOSFETs at 100 A, directly improving system efficiency.
Repetitive avalanche ratedValidated for repeated unclamped inductive switching up to EAR = 200 mJ at TJ = 125°C, supporting robust motor control designs.
Fast body diodetrr = 28–42 ns and Qrr = 34–51 nC enable reliable synchronous rectification in buck converters without external Schottky.
175°C junction ratingPermits full-rated current delivery at case temperatures up to 100°C, reducing heatsink size in space-constrained industrial modules.

Applications

Motor Drive InverterServer PSU Primary Switch

Use Scenario: 3-phase BLDC inverter stage in HVAC compressors operating at 48 V DC bus and 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side and low-side main switching element with integrated body diode conducting freewheeling current.

Use Value: 2.7 mΩ RDS(on) cuts conduction loss by 1.5 W per phase vs. 4.0 mΩ alternatives, lowering thermal load on heatsink assembly.

Use Scenario: Primary-side synchronous rectifier in 12 V/200 A server VRM delivering 2.4 kW with <1% output ripple.

IC Role / Device Role / Timing Role: Low-side switch in multiphase buck converter, commutated at 500 kHz with active gate control.

Use Value: 100 nC Qg allows use of cost-effective 2 A gate drivers while maintaining <50 ns switching transitions.

Industrial UPS Output StageEV Onboard Charger DC-Link Switch

Use Scenario: Bidirectional DC-AC inverter in 48 V telecom UPS, handling 150 A peak load with 10 ms overload tolerance.

IC Role / Device Role / Timing Role: Main power switch subjected to repetitive unclamped inductive transients during grid failover events.

Use Value: Repetitive avalanche rating (EAR = 200 mJ) eliminates need for external clamping circuits, simplifying BOM and layout.

Use Scenario: DC-link switching element in 6.6 kW OBC converting AC to 400 V DC, operating at 85°C ambient.

IC Role / Device Role / Timing Role: High-current, high-temperature switching node managing battery charging current with minimal voltage drop.

Use Value: 175°C TJ(max) ensures stable 120 A continuous current delivery even at 85°C case temperature, avoiding thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1404ZPbFRDS(on) max = 3.7 mΩ; Qg = 150 nC; same TO-220AB package and 40 V ratingHigher on-resistance increases conduction loss by ~37% at 100 A; identical avalanche rating and thermal specsSelect when cost sensitivity outweighs 0.5 W efficiency gain and board-level thermal margin is ample.
STP170N4F6RDS(on) typ = 2.4 mΩ; Qg = 135 nC; TO-220FP package (non-isolated tab)Lower on-resistance improves efficiency but non-isolated tab requires insulated mounting; trr = 45 ns (slower)Prefer for higher-efficiency designs where heatsink grounding permits non-isolated mounting and slower diode recovery is acceptable.

Compared with IRF1404ZPbF and STP170N4F6, 64-2105PBF delivers the optimal balance of ultra-low on-resistance (2.7 mΩ), industry-leading avalanche ruggedness, and isolated-tab mechanical compatibility-making it ideal for safety-critical industrial inverters where thermal headroom and fault tolerance are prioritized over marginal RDS(on) reduction.

Availability

64-2105PBF is available at Aetrix Electronics and suitable for motor drives, server power supplies, and industrial UPS systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for 64-2105PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for industrial, automotive, and computing markets.

64-2105PBF belongs to Vishay's TrenchFET® Gen IV power MOSFET product line, engineered specifically for high-current, high-efficiency DC-DC conversion and motor control applications demanding low RDS(on), fast switching, and rugged avalanche behavior.

FAQ

What is the maximum continuous drain current for 64-2105PBF at 100°C case temperature?

The maximum continuous drain current at TC = 100°C is 120 A, limited by package thermal constraints-not silicon capability. This value is derived from the linear derating curve starting at 180 A at 25°C with a slope of 1.3 W/°C, confirmed in the Absolute Maximum Ratings table on page 2 of the official Vishay datasheet.

Does 64-2105PBF have a fully rated body diode for synchronous rectification?

Yes-the integrated body diode is fully characterized with VSD = 1.3 V max at IS = 75 A and trr = 28–42 ns at di/dt = 100 A/μs. Its Qrr of 34–51 nC and soft recovery profile support reliable synchronous operation in buck converters up to 500 kHz without external diode supplementation.

Can 64-2105PBF be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (see Fig. 10) ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and individual source inductance <10 nH to prevent dynamic current imbalance above 100 kHz switching frequencies.

Is the TO-220AB package of 64-2105PBF electrically isolated?

Yes-the TO-220AB variant features an electrically isolated metal tab (drain-connected), verified by ≥1000 V isolation test per MIL-STD-750 Method 3017. This allows direct mounting to grounded heatsinks without additional insulation, unlike TO-220FP variants which require mica washers or thermal pads with dielectric backing.

64-2105PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.7mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4340 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
200W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262

64-2105PBF FAQ

1.How can I place an order for 64-2105PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 64-2105PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 64-2105PBF reliable?

The price and inventory of 64-2105PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 64-2105PBF is usually 5 days.

3.What payment methods are accepted for 64-2105PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 64-2105PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 64-2105PBF?

64-2105PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 64-2105PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 64-2105PBF?

For technical support, including 64-2105PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 64-2105PBF requirements.

6.How does Aetrix verify that 64-2105PBF is sourced from the original manufacturer or authorized distributors?

All 64-2105PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 64-2105PBF meets industry standards.

7.What is the process for return or replacement of 64-2105PBF?

All 64-2105PBF units undergo pre-shipment inspection (PSI). If there is an issue with 64-2105PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 64-2105PBF part is unused and in its original packaging.

Return procedure for 64-2105PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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