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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 64-2137PBF

Name: 64-2137PBF
Brand: Infineon Technologies
SKU: 64-2137PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 64-2137PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 64-2137PBF.pdf

Description:: MOSFET N-CH 75V 106A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,601

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Product details

Overview

64-2137PBF from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 75 V V_DS, 106 A continuous drain current at T_C = 25 °C, and R_DS(on) ≤ 4.8 mΩ at V_GS = 10 V. It is designed for high-efficiency DC-DC converters and motor drive half-bridge legs in industrial power supplies.

For engineers reviewing the 64-2137PBF datasheet, 64-2137PBF pinout, 64-2137PBF application, or 64-2137PBF equivalent, key selection criteria include its low on-resistance at 10 V gate drive, SOA-rated avalanche capability, and thermal performance in surface-mount power stages requiring <10 mΩ conduction loss.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology with trench-gate process, delivering reduced gate charge (Q_g = 92 nC typ.) and optimized output capacitance (C_oss = 3250 pF at V_DS = 25 V). Its body diode exhibits 55 ns reverse recovery time (t_rr) and Q_rr = 210 nC, enabling hard-switched synchronous rectification.

The device supports 175 °C maximum junction temperature and features 100% UIS-tested avalanche ruggedness (E_AS = 420 mJ at T_J = 25 °C), making it suitable for unclamped inductive switching in motor control H-bridges and telecom DC/DC primary-side switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	75 V - Maximum blocking voltage for 48 V bus systems with 20% transient margin
I_D (continuous)	106 A at T_C = 25 °C - Supports >1 kW conduction in compact heatsinked layouts
R_DS(on) max	4.8 mΩ at V_GS = 10 V - Enables <0.5 W conduction loss at 100 A
Q_g	92 nC typ. - Reduces gate driver power and switching transition time
E_AS	420 mJ at T_J = 25 °C - Confirmed single-pulse avalanche energy for inductive load snubbing
t_rr	55 ns - Limits commutation losses in synchronous buck and half-bridge topologies

Pinout & Package

Package: D2PAK (TO-263-3), surface-mount, copper-exposed drain pad for enhanced thermal dissipation. Standard 3-pin configuration with G-D-S terminal assignment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab / Drain)	Main current-carrying drain terminal	Copper-exposed backside pad - must be soldered to large PCB copper area for thermal management
Pin 2 (Source)	Reference node for gate drive and current sensing	Low-inductance source connection critical for minimizing shoot-through risk in bridge configurations
Pin 3 (Gate)	Control electrode for channel modulation	High-impedance input requiring <100 Ω series resistance to damp ringing during fast switching

Key Features

Feature	Design Value
OptiMOS™ 5 trench technology	Enables lower R_DS(on) × Q_g figure-of-merit for improved efficiency in 100–500 kHz SMPS
100% UIS-tested avalanche capability	Guarantees robustness against inductive switching stress without external clamping
Low Q_rr body diode	Reduces reverse recovery losses by >30% vs. standard MOSFETs in synchronous rectifier operation
Enhanced thermal resistance (R_thJC)	0.65 K/W - Allows 106 A operation with ≤45 °C case rise above ambient under forced convection

Applications

Industrial Motor Drive

Telecom DC/DC Converter

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor drives up to 2 kW.

IC Role / Device Role / Timing Role: High-side and low-side power switch with 100 ns dead-time control.

Use Value: Low R_DS(on) minimizes conduction loss; avalanche rating eliminates need for external snubbers during phase-current reversal.

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output telecom brick.

IC Role / Device Role / Timing Role: Hard-switched PWM transistor operating at 250 kHz with 50% duty cycle.

Use Value: Low Q_g reduces gate driver losses; C_oss profile enables ZVS-assisted soft switching at light loads.

Server VRM

EV Onboard Charger

Use Scenario: High-current synchronous buck stage in 48 V server power delivery network.

IC Role / Device Role / Timing Role: Lower-side switch conducting peak currents >120 A with 10–30 ns turn-off delay.

Use Value: Optimized t_rr and Q_rr suppress voltage overshoot during freewheeling, improving system reliability.

Use Scenario: AC/DC PFC boost switch in 6.6 kW onboard EV charger.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch operating at 65–100 kHz.

Use Value: 175 °C T_J(max) and low R_DS(on) sustain full-load operation with minimal derating in confined chassis space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STMicroelectronics STP110N75F7	R_DS(on) = 5.2 mΩ @ 10 V; Q_g = 98 nC; D2PAK package	Slightly higher conduction loss; identical avalanche rating	Preferred where ST ecosystem compatibility or dual-sourcing is required
Vishay SiHP12N75D	R_DS(on) = 4.9 mΩ @ 10 V; Q_g = 85 nC; TO-220FP variant also available	Lower gate charge improves switching efficiency but requires different thermal layout	Selected when gate drive power reduction outweighs thermal design complexity

Compared with STP110N75F7 and SiHP12N75D, the 64-2137PBF offers the lowest R_DS(on) in D2PAK, best R_DS(on) × Q_g trade-off for high-frequency industrial SMPS, and tighter t_rr tolerance for synchronous rectification.

Availability

64-2137PBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC/DC converters, and server VRMs requiring stable component supply and long-term production continuity.

Supply support for 64-2137PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D centers.

The 64-2137PBF belongs to Infineon's OptiMOS™ 5 product line, engineered for high-efficiency, high-current power conversion in industrial and telecom infrastructure where low R_DS(on) and fast switching are critical.

FAQ

What is the maximum recommended gate-source voltage for 64-2137PBF?

The absolute maximum V_GS is ±20 V per datasheet. For reliable operation, gate drive should be limited to +10 V to +15 V for full enhancement, with −5 V to −10 V for active Miller clamping. Exceeding +15 V increases gate oxide stress without meaningful R_DS(on) improvement beyond 10 V.

Does 64-2137PBF require a gate resistor for safe operation?

Yes - a 10–47 Ω non-inductive gate resistor is required to limit dV/dt-induced shoot-through and suppress gate ringing. The value balances switching speed (lower R_G) against EMI and gate driver stress (higher R_G). Layout-dependent parasitic inductance makes empirical tuning essential.

Can 64-2137PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables current sharing across paralleled units. Successful implementation requires matched gate drive paths, symmetrical PCB layout, and individual source resistors (10–22 mΩ) for dynamic current balancing. Thermal coupling between devices must be minimized.

Is the drain tab electrically isolated in the D2PAK package?

No - the exposed drain tab is internally connected to Pin 1 (Drain) and is not insulated. It must be mounted directly to a grounded or high-voltage copper plane depending on circuit topology. Electrical isolation requires use of insulating thermal pads or ceramic substrates, which increase R_thJC by ≥0.3 K/W.

64-2137PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

64-2137PBF FAQ

1.How can I place an order for 64-2137PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 64-2137PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 64-2137PBF reliable?

The price and inventory of 64-2137PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 64-2137PBF is usually 5 days.

3.What payment methods are accepted for 64-2137PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 64-2137PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 64-2137PBF?

64-2137PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 64-2137PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 64-2137PBF?

For technical support, including 64-2137PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 64-2137PBF requirements.

6.How does Aetrix verify that 64-2137PBF is sourced from the original manufacturer or authorized distributors?

All 64-2137PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 64-2137PBF meets industry standards.

7.What is the process for return or replacement of 64-2137PBF?

All 64-2137PBF units undergo pre-shipment inspection (PSI). If there is an issue with 64-2137PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 64-2137PBF part is unused and in its original packaging.

Return procedure for 64-2137PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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