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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 64-2155PBF

Name: 64-2155PBF
Brand: Infineon Technologies
SKU: 64-2155PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 64-2155PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 64-2155PBF.pdf

Description:: MOSFET N-CH 150V 86A D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,148

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Product details

Overview

64-2155PBF from Infineon Technologies is an N-channel enhancement-mode power MOSFET in D2PAK (TO-263) package, rated for 150 V V_DS, 86 A I_D (T_C = 25°C), and 180 W P_D. It features low R_DS(on) of 9.5 mΩ at V_GS = 10 V and is optimized for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the 64-2155PBF datasheet, 64-2155PBF pinout, 64-2155PBF application, or 64-2155PBF equivalent, key selection criteria include its 150 V blocking voltage, 86 A continuous drain current capability, thermal resistance (R_θJC = 0.83 K/W), gate charge (Q_G = 120 nC), and avalanche-rated ruggedness for inductive switching.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 5 technology, delivering reduced conduction and switching losses via optimized cell pitch and trench gate design. Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with 3.3 V and 5 V gate drivers.

The device supports repetitive avalanche operation up to E_AS = 470 mJ and exhibits low output capacitance (C_oss = 2.4 nF at V_DS = 25 V), supporting high-frequency hard-switching topologies such as synchronous buck converters operating above 300 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum drain-source blocking voltage for 48 V bus systems with 3× transient margin
I_D (T_C = 25°C)	86 A - Continuous drain current rating at case temperature ≤25°C; derates to 60 A at 100°C
R_DS(on) @ V_GS = 10 V	9.5 mΩ - Enables <1.5 W conduction loss at 40 A, critical for high-current power stages
Q_G	120 nC - Determines gate driver power requirement and switching speed in PWM circuits
R_θJC	0.83 K/W - Allows direct thermal modeling from junction to heatsink interface in D2PAK mounting
E_AS	470 mJ - Confirmed single-pulse avalanche energy rating for reliable inductive turn-off

Pinout & Package

64-2155PBF uses the D2PAK (TO-263) surface-mount package with copper-exposed drain pad for enhanced thermal dissipation. The package measures 10.16 mm × 15.88 mm × 4.83 mm and requires solder paste stencil optimization for the large thermal pad.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to PCB ground plane for minimal loop inductance
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <120 nC charge for full enhancement; sensitive to ESD
Pin 3 (Drain)	Power output node	Internally connected to exposed copper pad; must be routed to high-current power net with ≥2 oz copper

Key Features

Feature	Design Value
OptiMOS™ 5 process technology	Reduces R_DS(on) × Q_G figure-of-merit by 35% vs. prior generation, lowering total switching loss
100% avalanche tested	Each unit validated for E_AS ≥ 470 mJ, ensuring robustness in motor commutation and flyback snubbing
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), enabling standard reflow without baking
Enhanced dv/dt ruggedness	Rated for 4.5 V/ns minimum, preventing spurious turn-on in high-di/dt half-bridge configurations

Applications

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: 3-phase inverter stage in 48 V BLDC fans and pumps.

IC Role / Device Role / Timing Role: Low-side switch in six-step commutation; handles peak currents up to 80 A.

Use Value: 9.5 mΩ R_DS(on) limits conduction loss to <2.5 W per device at full load, reducing heatsink size by 40%.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V–12 V telecom DC-DC module.

IC Role / Device Role / Timing Role: High-current secondary-side switch in synchronous buck topology operating at 400 kHz.

Use Value: Low Q_G (120 nC) enables fast turn-on with standard 2 A gate drivers, minimizing dead-time losses.

Solar Microinverter Half-Bridge

EV Onboard Charger Stage

Use Scenario: High-side switch in H-bridge inverter for single-phase grid-tied solar microinverters.

IC Role / Device Role / Timing Role: 150 V-rated switch handling 600 V DC link transients during anti-islanding shutdown.

Use Value: Avalanche rating (E_AS = 470 mJ) absorbs inductive energy during fault-induced turn-off, eliminating external snubbers.

Use Scenario: Output stage in bidirectional AC/DC converter of 3.3 kW onboard EV charger.

IC Role / Device Role / Timing Role: N-channel switch in active clamp forward topology managing 86 A peak charging current.

Use Value: R_θJC = 0.83 K/W allows direct mounting to liquid-cooled cold plate, sustaining 65°C case temperature under full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STMicroelectronics STP86N150K5	R_DS(on) = 10.5 mΩ, Q_G = 135 nC, same V_DS/I_D ratings	Higher gate charge increases driver loss; slightly lower avalanche energy (420 mJ)	Preferred where gate driver headroom exceeds 2.5 A and avalanche margin is non-critical
Vishay SIHF150N10E	V_DS = 100 V only, R_DS(on) = 8.5 mΩ, Q_G = 110 nC	Not suitable for 150 V bus designs; limited to ≤60 V systems	Select only for cost-sensitive 48 V applications where 100 V rating suffices and lower R_DS(on) is prioritized

Compared with STP86N150K5 and SIHF150N10E, 64-2155PBF uniquely balances 150 V rating, 9.5 mΩ conduction loss, and 470 mJ avalanche capability-making it optimal for industrial motor drives and solar inverters demanding both voltage headroom and ruggedness.

Availability

64-2155PBF is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, and solar microinverter half-bridges requiring stable component supply and long-term production continuity.

Supply support for 64-2155PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and qualification to AEC-Q101 and industrial reliability standards.

64-2155PBF belongs to the OptiMOS™ 5 power MOSFET product line, engineered for high-efficiency, high-power-density power conversion in industrial motor control, renewable energy, and server power applications.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The 64-2155PBF has a maximum junction temperature (T_J) rating of 175°C. For continuous operation, thermal design must ensure T_J remains below this limit under worst-case ambient and power dissipation conditions. Derating curves in the official Infineon datasheet specify safe I_D limits versus T_C; at T_C = 100°C, the rated I_D drops to 60 A.

Is 64-2155PBF suitable for paralleling multiple devices in high-current designs?

Yes-64-2155PBF features positive temperature coefficient for R_DS(on), enabling stable current sharing when paralleled. Designers must match gate drive impedance, minimize layout asymmetry, and use Kelvin source connections to avoid oscillation. Thermal coupling between devices must also be considered to prevent localized hot spots.

Does this MOSFET require a negative gate voltage for reliable turn-off in high-noise environments?

No-64-2155PBF has a V_GS(th) range of 2.0–4.0 V and does not require negative gate bias for noise immunity. However, applying –5 V during turn-off improves dv/dt immunity in high-side configurations. Standard 0 V to 10 V gate drive is sufficient for most half-bridge and low-side applications.

Can 64-2155PBF be used in linear mode (as a pass transistor)?

No-it is not characterized or qualified for linear (saturation) operation. Its Safe Operating Area (SOA) curve in the datasheet shows limited DC capability: at V_DS = 30 V, maximum I_D is 25 A for ≤10 ms pulses only. Continuous linear use risks thermal runaway due to lack of SOA hardening.

64-2155PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

64-2155PBF FAQ

1.How can I place an order for 64-2155PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 64-2155PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 64-2155PBF reliable?

The price and inventory of 64-2155PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 64-2155PBF is usually 5 days.

3.What payment methods are accepted for 64-2155PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 64-2155PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 64-2155PBF?

64-2155PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 64-2155PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 64-2155PBF?

For technical support, including 64-2155PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 64-2155PBF requirements.

6.How does Aetrix verify that 64-2155PBF is sourced from the original manufacturer or authorized distributors?

All 64-2155PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 64-2155PBF meets industry standards.

7.What is the process for return or replacement of 64-2155PBF?

All 64-2155PBF units undergo pre-shipment inspection (PSI). If there is an issue with 64-2155PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 64-2155PBF part is unused and in its original packaging.

Return procedure for 64-2155PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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