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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 64-4059PBF

Name: 64-4059PBF
Brand: Infineon Technologies
SKU: 64-4059PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 64-4059PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: 64-4059PBF.pdf

Description:: MOSFET N-CH 40V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

64-4059PBF from International Rectifier is an N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 40V V_DSS, 9.0 mΩ R_DS(on) at V_GS = 10V, and 42A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 74 ns, t_f = 38 ns), and rated repetitive avalanche energy up to 77 mJ - deployed in DC-DC converters, motor drive half-bridges, and synchronous rectification stages.

For engineers reviewing the 64-4059PBF datasheet, 64-4059PBF pinout, 64-4059PBF application, or 64-4059PBF equivalent, key selection criteria include verified R_DS(on) at 10V gate drive, body diode reverse recovery charge (Q_rr = 9.2–14 nC), thermal resistance R_θJC = 1.66°C/W, and unclamped inductive switching capability under 175°C junction limits.

Technical Context

This MOSFET employs advanced silicon processing to minimize conduction loss per unit area while maintaining robust safe operating area (SOA) up to 100 µs pulse width at 42A. Its low gate charge (Q_g = 30–45 nC) and Miller charge (Q_gd = 12 nC) support high-frequency PWM operation with reduced driver power demand.

The integrated body diode exhibits V_SD = 1.3 V at 42A and fast trr = 18–27 ns, enabling efficient freewheeling in buck and H-bridge topologies. Repetitive avalanche rating is validated per AN-1005, with E_AR = 77 mJ at T_J = 25°C and derated linearly to zero at T_J = 175°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche onset; defines upper limit for input rail in 36V nominal systems.
R_DS(on)	9.0 mΩ @ V_GS = 10V - Conduction loss of 15.9 W at 42A; enables <1% efficiency penalty in 12V/40A point-of-load converters.
I_D (cont)	42 A @ T_C = 25°C - Sustained current capability with PCB heatsinking; requires ≥25 cm² 2-oz copper pad for thermal compliance.
Q_g	45 nC max - Total gate charge determines driver strength requirement; 15 Ω gate resistor yields ~15 ns turn-on delay in typical layout.
t_r/t_f	74 ns / 38 ns - Rise/fall times set minimum practical switching frequency (~200 kHz) before switching loss dominates conduction loss.
E_AS	310 mJ - Single-pulse avalanche energy; supports reliable operation during load dump or inductive kick without snubber.
R_θJC	1.66 °C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink for >70W dissipation at ΔT = 117°C.

Pinout & Package

64-4059PBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain tab for thermal and electrical connection. The package has three terminals: Drain (tab + pin 2), Source (pin 1), and Gate (pin 3).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab + Pin 2)	Main current-carrying terminal, tied to internal die substrate	Must be soldered to large copper pour or heatsink; electrically connects to high-side switch node or output rail.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance return path for load current; critical for stable gate control and accurate R_DS(on)-based current monitoring.
Gate (Pin 3)	Control electrode for channel formation	High-impedance input requiring low-ESR gate resistor (typically 10–22 Ω) to damp ringing and limit peak dV/dt-induced shoot-through.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9.0 mΩ at 10V drive reduces I²R losses by >30% vs. legacy 40V MOSFETs in 12V automotive loads.
175°C junction rating	Enables operation in under-hood environments without derating; eliminates need for external thermal shutdown circuitry.
Repetitive avalanche capability	Rated for repeated unclamped inductive switching up to T_Jmax; removes reliance on external clamping diodes in motor gate drivers.
Fast body diode recovery	Q_rr = 9.2–14 nC and t_rr = 18–27 ns minimize cross-conduction loss in synchronous rectifiers and half-bridge LLC resonant converters.
Lead-free construction	RoHS-compliant Pb-free plating and halogen-free molding compound meet IPC-J-STD-020 moisture sensitivity level 1 (MSL1).

Applications

Automotive DC-DC Converters

Industrial Motor Drive Half-Bridges

Use Scenario: 12V-to-5V/3.3V step-down conversion in ADAS camera modules and infotainment head units.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch in multiphase buck regulator with 500 kHz switching frequency.

Use Value: 9.0 mΩ R_DS(on) cuts conduction loss by 4.2 W vs. 15 mΩ alternative, reducing thermal stress on compact PCB layout.

Use Scenario: 24V BLDC motor commutation in warehouse automation conveyors and robotic joint actuators.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, driven by isolated gate driver with 15V supply.

Use Value: 175°C T_J rating allows full 42A current delivery at 85°C ambient without forced air, simplifying enclosure design.

Server VRM Power Stages

LED Driver Constant-Current Switches

Use Scenario: CPU/GPU voltage regulation in edge server PSUs with tight thermal envelopes and high transient response demands.

IC Role / Device Role / Timing Role: Primary switching element in 30A/phase DrMOS-like discrete power stage with integrated driver feedback.

Use Value: Q_g = 45 nC and Q_gd = 12 nC enable <100 ns dead-time control, minimizing shoot-through risk during 1 MHz+ operation.

Use Scenario: Constant-current dimming switch in outdoor LED street lighting with 36V nominal bus and PWM dimming interface.

IC Role / Device Role / Timing Role: High-efficiency series pass switch modulated at 1–20 kHz to regulate LED string current.

Use Value: Fast t_f = 38 ns ensures clean PWM edges with <1% duty-cycle error at 20 kHz, preserving color consistency across luminaires.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3504PbF	Same die, but in smaller D2PAK-3L (TO-263) package; R_θJA = 40°C/W vs. 110°C/W for 64-4059PBF on 1-in² board.	Better thermal performance in space-constrained layouts where heatsink mounting is impractical.	Select when board-level thermal management favors higher R_θJC over lower R_θJA, e.g., sealed enclosures with limited airflow.
STP40NF10L	100V-rated device with 11 mΩ R_DS(on); higher V_DSS margin but 22% higher conduction loss at 42A.	Suitable for 48V industrial systems where 40V rating is insufficient, but less efficient in 12–24V designs.	Choose only if system overvoltage transients exceed 40V or if existing BOM uses ST's SuperMESH process for supply chain consolidation.

Compared with IRLR3504PbF, 64-4059PBF offers superior PCB-mount thermal resistance (1.66°C/W vs. 2.5°C/W) and lower cost per amp in high-volume automotive production; versus STP40NF10L, it delivers 19% lower conduction loss at 24V input but requires stricter input transient suppression.

Availability

64-4059PBF is available at Aetrix Electronics and suitable for automotive DC-DC converters, industrial motor drive half-bridges, and server VRM power stages requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant lead-free assembly.

Supply support for 64-4059PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies since 2015) pioneered high-performance power MOSFETs and IGBTs, with core expertise in silicon process innovation and thermal packaging for power electronics.

64-4059PBF belongs to the HEXFET® family, engineered specifically for high-efficiency, high-reliability switching in automotive, industrial, and computing power supplies where low R_DS(on), fast switching, and rugged avalanche behavior are mandatory.

FAQ

What is the maximum recommended gate drive voltage for 64-4059PBF?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for 10 V drive. Applying 12–15 V improves R_DS(on) marginally (to ~8.23 mΩ typ.) without increasing gate oxide stress; exceeding 15 V provides diminishing returns and raises risk of gate leakage degradation over time.

Does 64-4059PBF require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to control dV/dt, suppress oscillation, and limit peak gate current. For 15 V drive and typical PCB layout, a 15 Ω non-inductive resistor yields t_d(on) ≈ 15 ns and dV/dt < 5 V/ns, balancing speed and EMI. Lower values (<10 Ω) increase ringing risk; higher values (>33 Ω) degrade switching efficiency above 200 kHz.

Can 64-4059PBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.032 V/°C) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and individual 1–2 Ω source resistors for dynamic balancing. Derate total current by 15% for thermal margin in 2× configuration.

Is the body diode in 64-4059PBF suitable for synchronous rectification?

Yes - the integral body diode has V_SD = 1.3 V at 42A and Q_rr = 9.2–14 nC, making it viable for synchronous rectification in buck converters up to 500 kHz. However, for optimal efficiency above 300 kHz, external Schottky or GaN-based synchronous FETs are preferred due to lower forward drop and near-zero Q_rr.

64-4059PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 45 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1510 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

64-4059PBF FAQ

1.How can I place an order for 64-4059PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 64-4059PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 64-4059PBF reliable?

The price and inventory of 64-4059PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 64-4059PBF is usually 5 days.

3.What payment methods are accepted for 64-4059PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 64-4059PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 64-4059PBF?

64-4059PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 64-4059PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 64-4059PBF?

For technical support, including 64-4059PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 64-4059PBF requirements.

6.How does Aetrix verify that 64-4059PBF is sourced from the original manufacturer or authorized distributors?

All 64-4059PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 64-4059PBF meets industry standards.

7.What is the process for return or replacement of 64-4059PBF?

All 64-4059PBF units undergo pre-shipment inspection (PSI). If there is an issue with 64-4059PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 64-4059PBF part is unused and in its original packaging.

Return procedure for 64-4059PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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