Infineon Technologies 64-4092PBF

Overview

64-4092PBF from Infineon Technologies is a logic-level N-channel enhancement-mode Power MOSFET in D-Pak (TO-252AA) package, rated for 55 V V_DSS, 28 A continuous drain current at 25°C, and 0.040 Ω R_DS(on) at V_GS = 10 V. It features fully avalanche-rated operation, fast switching (t_r = 100 ns), and integrated body diode with 1.3 V V_SD - deployed in DC-DC converters, motor drivers, and load-switching circuits.

For engineers reviewing the 64-4092PBF datasheet, 64-4092PBF pinout, 64-4092PBF application, or 64-4092PBF equivalent, key selection criteria include gate threshold voltage (1.0–2.0 V), junction-to-case thermal resistance (2.2 °C/W), unclamped inductive switching capability (110 mJ E_AS), and lead-free compliance per consumer-level qualification.

Technical Context

This MOSFET employs Infineon's fifth-generation HEXFET® process to achieve ultra-low on-resistance density and high dv/dt immunity (5.0 V/ns). Its logic-level gate drive enables direct interfacing with 3.3 V/5 V microcontrollers without level-shifting circuitry.

The device integrates a rugged p-n junction body diode with 76–110 ns reverse recovery time and 190–290 nC Q_rr, supporting synchronous rectification and bidirectional energy transfer in half-bridge topologies while maintaining SOA integrity up to 175°C junction temperature.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical performance; 3-pin configuration optimized for high-current PCB routing and automated assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLR2705PbF, 64-4092PBF offers identical electrical and thermal performance but may differ in traceability labeling or lot-level qualification; versus STP28NF55, it delivers lower losses and smaller footprint at the cost of TO-220 compatibility.

Availability

64-4092PBF is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and hot-swap load switching requiring stable component supply and long-term industrial lifecycle support.

Supply support for 64-4092PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion applications - emphasizing low R_DS(on), fast switching, and rugged avalanche performance in surface-mount packages.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The 64-4092PBF has a maximum operating junction temperature of +175°C. At 100°C case temperature, its continuous drain current derates to 20 A due to thermal limits - not package current capacity. This reflects silicon thermal saturation, not bondwire limitation, and aligns with the 0.45 W/°C linear derating factor from 68 W max power dissipation.

Is the body diode suitable for synchronous rectification in buck converters?

Yes - the integrated body diode has 76–110 ns reverse recovery time and 190–290 nC Q_rr at 25°C, verified under 100 A/µs di/dt. When used as a synchronous rectifier at ≤300 kHz, it achieves lower conduction loss than a 40 V Schottky diode while avoiding reverse recovery spikes that cause EMI in hard-switched topologies.

Does 64-4092PBF require a gate resistor for stability in high-speed switching?

A gate resistor is recommended to dampen ringing caused by gate loop inductance and Miller capacitance. With 25 nC Q_g and 14 nC Q_gd, a 6.5 Ω resistor (per datasheet test condition) balances switching speed and overshoot. Lower values increase dV/dt stress; higher values raise switching losses beyond 100 kHz operation.

How does the D-Pak package compare thermally to TO-220 for this MOSFET?

The D-Pak (TO-252AA) offers 2.2 °C/W R_θJC - significantly better than typical TO-220's ~1.5–1.8 °C/W - because its exposed drain pad enables direct thermal coupling to large PCB copper areas. However, R_θJA is 50 °C/W (PCB mount) vs. ~62 °C/W for TO-220, making D-Pak superior in board-level thermal management when using adequate thermal vias and copper pour.