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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 64-8016

Name: 64-8016
Brand: Infineon Technologies
SKU: 64-8016
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 64-8016

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: 64-8016.pdf

Description:: MOSFET N-CH 40V 75A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRL1404ZPbF from Infineon Technologies is a logic-level N-channel HEXFET® Power MOSFET designed for high-current, low-voltage switching in power supplies, motor drives, and DC-DC converters. It features 40 V V_DSS, 3.1 mΩ R_DS(on) at V_GS = 10 V, 120 A continuous drain current (silicon-limited), 175°C maximum junction temperature, and rated repetitive avalanche energy of 490 mJ.

For engineers reviewing the IRL1404ZPbF datasheet, IRL1404ZPbF pinout, IRL1404ZPbF application, or IRL1404ZPbF equivalent, key selection criteria include on-resistance at 4.5 V gate drive, thermal resistance (R_θJC = 0.65°C/W), body diode recovery (t_rr = 26–39 ns), and TO-220AB package compatibility with standard heatsink mounting.

Technical Context

This MOSFET employs advanced planar silicon processing to achieve ultra-low conduction loss while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (1.4–2.7 V) ensures full enhancement with 4.5 V logic-level drive, and its 75 nC total gate charge enables efficient high-frequency PWM operation up to several hundred kHz.

The integrated body diode supports synchronous rectification and freewheeling in buck converters and H-bridge topologies. Thermal design is enabled by validated transient impedance data (Fig. 11), and safe operating area (SOA) curves confirm linear derating up to 175°C junction temperature under pulsed conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage before avalanche; suitable for 24 V and 36 V bus systems.
R_DS(on)	3.1 mΩ @ V_GS = 10 V - Enables ≤3.7 W conduction loss at 110 A, critical for high-efficiency power stages.
I_D (cont)	120 A @ T_C = 25°C - Silicon-limited rating; actual usable current depends on heatsinking and PCB layout.
Q_g	75 nC - Determines gate driver power requirement; compatible with common 1–2 A peak drivers.
t_rr	26–39 ns - Fast body diode recovery reduces switching loss and EMI in hard-switched topologies.
R_θJC	0.65°C/W - Enables direct heatsink mounting; 100 W dissipation raises junction only ~65°C above case.
E_AS	490 mJ - Validated single-pulse avalanche energy; supports robustness against inductive load transients.

Pinout & Package

IRL1404ZPbF uses the TO-220AB package: 3-pin through-hole, isolated tab (drain-connected), standard footprint, and screw-mount compatible with industry heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Source	Return path for load current / reference node for gate drive	Low-inductance source connection essential for stable switching; internal source inductance LS = 7.5 nH.
Gate	Control terminal for channel conduction	Capacitive input (C_iss = 5080 pF); requires low-impedance drive to minimize switching losses.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, eliminating need for gate boosters in 5 V or 3.3 V control systems.
Ultra-low R_DS(on)	3.1 mΩ minimizes I²R losses in high-current paths-critical for 12 V/24 V battery-powered motor controllers.
175°C junction rating	Enables operation in sealed enclosures or high-ambient environments without derating below 100% current.
Repetitive avalanche rated	Validated for repeated unclamped inductive switching up to 490 mJ per pulse-no external snubber required in many flyback or relay-drive designs.
Lead-free construction	RoHS-compliant packaging (PbF suffix) meets global environmental compliance requirements for industrial and automotive applications.

Applications

DC-DC Buck Converter

Automotive Body Control Module

Use Scenario: High-efficiency 12 V to 5 V/3.3 V conversion for infotainment and ADAS subsystems.

IC Role / Device Role / Timing Role: Synchronous high-side switch in fixed-frequency PWM topology with 200 kHz–1 MHz switching.

Use Value: Low R_DS(on) and fast t_rr reduce conduction and recovery losses, enabling >95% efficiency at 30 A output.

Use Scenario: Load switching for headlights, HVAC actuators, and window lift motors in 12 V vehicle electrical architecture.

IC Role / Device Role / Timing Role: Low-side power switch controlled by microcontroller GPIO with PWM dimming or soft-start sequencing.

Use Value: Logic-level gate allows direct MCU drive; 175°C rating ensures reliability under hood temperatures up to 125°C ambient.

Industrial Motor Starter

Server PSU OR-ing Circuit

Use Scenario: Solid-state replacement for contactors in 24 V/48 V BLDC motor start-up and braking circuits.

IC Role / Device Role / Timing Role: Half-bridge low-side switch handling 100 A inverter leg with 10 μs dead-time control.

Use Value: Repetitive avalanche rating absorbs inductive kickback during rapid deceleration without clamping diodes.

Use Scenario: Hot-swap and redundancy management in dual-input 12 V server power distribution units.

IC Role / Device Role / Timing Role: Back-to-back configured N-channel MOSFET for bidirectional reverse-current blocking and low-loss forward conduction.

Use Value: Ultra-low R_DS(on) limits voltage drop to <20 mV at 60 A, minimizing power loss and thermal stress in parallel PSU configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N4F6	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 85 nC; TO-220 package	Slightly higher gate charge increases driver loss; identical V_DSS and thermal rating	Preferred where gate driver has ≥2 A peak capability and layout accommodates marginally higher switching loss.
IRF1404ZPbF	R_DS(on) = 4.7 mΩ @ 10 V; same package and avalanche rating	Higher conduction loss reduces efficiency in high-current continuous duty; otherwise pin-compatible	Selected when cost sensitivity outweighs 25% higher I²R loss, or for legacy design reuse with relaxed thermal margins.

Compared with STP120N4F6 and IRF1404ZPbF, the IRL1404ZPbF delivers the lowest R_DS(on) and best gate drive compatibility among TO-220 40 V N-channel MOSFETs, making it optimal for thermally constrained, high-efficiency 12–24 V power stages.

Availability

IRL1404ZPbF is available at Aetrix Electronics and suitable for DC-DC converters, automotive body electronics, industrial motor starters, and server power OR-ing circuits requiring stable component supply and long-term manufacturability.

Supply support for IRL1404ZPbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRL1404Z series belongs to Infineon's logic-level HEXFET® Power MOSFET product line, engineered specifically for high-current, low-voltage switching in space-constrained and thermally demanding applications such as automotive ECUs and telecom power systems.

FAQ

Is IRL1404ZPbF suitable for 5 V microcontroller direct drive?

Yes. With a gate threshold voltage range of 1.4–2.7 V and full enhancement at V_GS = 4.5 V, the IRL1404ZPbF is explicitly designed for direct drive from 5 V or 3.3 V logic outputs. Its 75 nC gate charge requires a driver capable of ≥1 A peak current for sub-100 ns switching transitions.

What is the maximum continuous current achievable with standard TO-220 heatsinking?

At T_C = 100°C, the datasheet specifies 140 A continuous drain current (package-limited). With a typical heatsink thermal resistance of 1.0°C/W and ambient of 50°C, junction temperature remains below 175°C up to ~95 A continuous, assuming proper mounting torque (10 lbf·in) and thermal grease.

Does IRL1404ZPbF have an integrated Schottky diode?

No. It contains a monolithic body diode formed by the MOSFET's inherent p-n junction. This diode has V_SD = 1.3 V and t_rr = 26–39 ns-suitable for freewheeling but not optimized for ultra-fast or low-V_F applications like dedicated Schottky or SiC diodes.

Can IRL1404ZPbF replace IRL1404 in existing PCB layouts?

Yes. The IRL1404ZPbF is a drop-in replacement for the legacy IRL1404 in TO-220AB packages, sharing identical pinout, footprint, and thermal/mechanical dimensions. Key improvements include lower R_DS(on) (3.1 mΩ vs. 4.7 mΩ), higher avalanche energy (490 mJ vs. 220 mJ), and lead-free compliance.

64-8016 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.1mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 2.7V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 5080 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 230W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

64-8016 FAQ

1.How can I place an order for 64-8016 through Aetrix?

Please submit a Request for Quotation (RFQ) for 64-8016 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 64-8016 reliable?

The price and inventory of 64-8016 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 64-8016 is usually 5 days.

3.What payment methods are accepted for 64-8016?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 64-8016 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 64-8016?

64-8016 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 64-8016 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 64-8016?

For technical support, including 64-8016 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 64-8016 requirements.

6.How does Aetrix verify that 64-8016 is sourced from the original manufacturer or authorized distributors?

All 64-8016 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 64-8016 meets industry standards.

7.What is the process for return or replacement of 64-8016?

All 64-8016 units undergo pre-shipment inspection (PSI). If there is an issue with 64-8016, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 64-8016 part is unused and in its original packaging.

Return procedure for 64-8016:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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