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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 64-9144

Name: 64-9144
Brand: Infineon Technologies
SKU: 64-9144
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 64-9144

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric ST

Datasheet:: 64-9144.pdf

Description:: MOSFET N-CH 30V 14A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6617 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in DirectFET ST package, optimized for high-frequency synchronous buck converters in CPU core power delivery. It features 30 V V_DS, 8.1 mΩ R_DS(on) @ 10 V, 11 nC total gate charge, 0.7 mm profile, and dual-sided cooling capability - enabling ultra-low conduction and switching losses in compact DC-DC modules.

For engineers reviewing the IRF6617 datasheet, IRF6617 pinout, IRF6617 application, or IRF6617 equivalent, key selection criteria include its low-profile DirectFET thermal performance, gate charge balance for high-efficiency control-FET operation, compatibility with standard SMT reflow processes per AN-1035, and validated use in 1–3 MHz VRM/VRD designs powering modern x86 and ARM processors.

Technical Context

The IRF6617 employs trench-gate HEXFET silicon with optimized channel geometry to simultaneously minimize R_DS(on) and Q_g, targeting the control FET position in multiphase buck converters where voltage stress is limited (<30 V) but switching speed and thermal density are critical. Its gate threshold voltage (1.35–2.35 V) ensures robust turn-on under 4.5 V drive, supporting Intel VR12/VR13 and AMD SVI2 specifications.

Thermally, the DirectFET ST package delivers R_θJC = 3.0 °C/W and R_θJ-PCB = 1.0 °C/W when mounted with dual-sided cooling, achieving an 80% improvement over prior-generation packages. The integrated body diode supports synchronous rectification with t_rr = 16–24 ns and Q_rr = 7.2–11 nC at T_J = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Rated for CPU core rail applications up to 24 V input with margin for transient overshoot
R_DS(on) max	8.1 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 15 A continuous drain current
Q_g typ.	11 nC - Reduces gate drive power and enables fast switching at >1 MHz frequencies
Package height	0.7 mm - Fits within ultra-thin VRM modules and allows stacked PCB layouts
R_θJ-PCB	1.0 °C/W - Achieved with double-sided copper mounting; enables >50 W power handling on 1-in² board area
t_rr	16–24 ns - Minimizes shoot-through risk and reverse recovery loss in synchronous operation
I_D @ T_C = 25°C	55 A - Supports high-current phases without external heatsinking in multi-phase configurations

Pinout & Package

The IRF6617 uses the DirectFET ST (Small Size Can, T-Designation) package - a top-side-drain, bottom-side-source/gate metal-can structure with no leads, designed for double-sided thermal interface. Dimensions: 4.75 × 3.70 × 0.70 mm (L × W × H), with exposed drain pad on top and source/gate terminals on bottom substrate.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Drain (D)	Primary heat path; electrically connected to drain; must be thermally coupled to heatsink or power plane
Bottom Substrate Pad A	Source (S)	Main current return path; soldered to ground/power plane; defines low-inductance source loop
Bottom Substrate Pad B	Gate (G)	Control terminal; isolated by dielectric layer; requires short, low-impedance gate trace to driver

Key Features

Feature	Design Value
Ultra-low profile (0.7 mm)	Enables vertical stacking of power stages and integration into space-constrained mobile/embedded VRMs
Dual-sided cooling architecture	Allows simultaneous thermal interface to top (drain) and bottom (source) - reducing junction-to-ambient resistance by 80%
Optimized R_DS(on)/Q_g ratio	8.1 mΩ / 11 nC = 0.736 mΩ·nC - balances conduction and switching loss for 1–3 MHz operation
Low gate-to-drain charge (Q_gd)	4.0 nC - minimizes Miller effect, improving dv/dt immunity and gate drive efficiency
Body diode with fast recovery	t_rr = 16 ns, Q_rr = 7.2 nC - reduces dead-time loss and EMI in synchronous rectification

Applications

Server CPU Core VRM

Laptop Processor Power Stage

Use Scenario: 3+ phase buck converter delivering 1–2 V @ 100+ A to Intel Xeon or AMD EPYC processors in 1U servers.

IC Role / Device Role / Timing Role: Control FET in high-side switch position; switched at 1–2 MHz with precise gate timing to minimize overlap loss.

Use Value: 8.1 mΩ R_DS(on) and 11 nC Q_g reduce total power loss by ≥15% vs. comparable SO-8 MOSFETs, directly improving system efficiency and thermal headroom.

Use Scenario: Dual-phase VRM powering 15–45 W mobile CPUs (e.g., Intel Core i7-U series) in thin-and-light notebooks.

IC Role / Device Role / Timing Role: High-side switching element in compact, low-profile power stage; operated with adaptive voltage positioning (AVP).

Use Value: 0.7 mm height enables placement beneath keyboard or display bezel; dual-sided cooling maintains T_J < 105°C under sustained load without fan augmentation.

GPU Voltage Regulator Module

AI Accelerator Core Supply

Use Scenario: 6–8 phase VRM supplying dynamic 0.7–1.2 V rails to NVIDIA A100 or AMD MI250X GPU cores.

IC Role / Device Role / Timing Role: Primary control FET handling peak currents >80 A per phase with <100 ns switching transitions.

Use Value: Low Q_gd (4.0 nC) and Crss = 160 pF suppress Miller-induced false turn-on during high dv/dt events, ensuring reliable operation at 1.5 MHz.

Use Scenario: High-density, multi-rail power delivery for ASIC-based AI inference accelerators requiring sub-1 V, high-transient-current supplies.

IC Role / Device Role / Timing Role: Fast-switching control FET in interleaved buck topology with digital PWM controller feedback loop.

Use Value: R_θJ-PCB = 1.0 °C/W enables >40 W dissipation on minimal PCB real estate, supporting board-level power density >80 W/in².

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency control-FET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRF6622	30 V, 6.2 mΩ @ 10 V, 13.5 nC Q_g, same DirectFET ST package	Lower R_DS(on) but higher gate charge increases switching loss above 1.2 MHz	Prefer for lower-current, thermally constrained designs where conduction loss dominates
Vishay SiR626DP	30 V, 7.0 mΩ @ 10 V, 12.5 nC Q_g, PowerPAK® 1212-8 package (1.05 mm height)	Higher profile limits board stacking; R_θJA = 58 °C/W vs. IRF6617's 12.5 °C/W (mounted)	Choose only if DirectFET assembly infrastructure is unavailable; expect ~20% higher thermal resistance

Compared with IRF6622 and SiR626DP, the IRF6617 offers the optimal trade-off between gate charge and on-resistance for 1–2 MHz CPU VRMs, while its 0.7 mm height and dual-sided cooling uniquely support next-gen ultra-thin, high-power-density power stages.

Availability

IRF6617 is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop processor power stages, and GPU voltage regulator modules requiring stable component supply across long production lifecycles.

Supply support for IRF6617 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive microcontrollers, and industrial IoT solutions.

The IRF6617 belongs to Infineon's DirectFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure where thermal density and switching speed are critical.

FAQ

What is the maximum continuous drain current for IRF6617 at 70°C ambient temperature?

The IRF6617 supports 27 A continuous drain current at T_A = 70°C with standard surface-mount mounting on a 1 in² copper board. This rating assumes natural convection cooling and accounts for derating per the 0.017 W/°C linear derating factor above 70°C ambient.

Does IRF6617 require special PCB layout considerations beyond standard SMT practices?

Yes - the DirectFET ST package demands symmetric thermal pad design on both top and bottom layers, strict adherence to stencil aperture dimensions per AN-1035, and avoidance of solder mask over thermal pads. Asymmetric mounting degrades R_θJ-PCB by up to 3× and risks solder joint voiding.

Can IRF6617 be used as a synchronous rectifier (low-side FET) in buck converters?

No - the IRF6617 is optimized as a control (high-side) FET. Its body diode forward voltage (V_SD = 0.81–1.0 V) and Q_rr are not minimized for freewheeling duty; dedicated sync-FETs like IRF6616 offer lower V_SD and faster t_rr for low-side operation.

Is IRF6617 compliant with RoHS and REACH regulations?

Yes - the IRF6617 is RoHS-compliant (lead-free terminations and packaging) and REACH-conformant, as confirmed in Infineon's official material declarations dated March 2004 and updated in subsequent compliance reports. Halogen content is below 900 ppm per IEC 61249-2-21.

64-9144 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric ST

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta), 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.1mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.1W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ ST

64-9144 FAQ

1.How can I place an order for 64-9144 through Aetrix?

Please submit a Request for Quotation (RFQ) for 64-9144 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 64-9144 reliable?

The price and inventory of 64-9144 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 64-9144 is usually 5 days.

3.What payment methods are accepted for 64-9144?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 64-9144 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 64-9144?

64-9144 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 64-9144 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 64-9144?

For technical support, including 64-9144 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 64-9144 requirements.

6.How does Aetrix verify that 64-9144 is sourced from the original manufacturer or authorized distributors?

All 64-9144 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 64-9144 meets industry standards.

7.What is the process for return or replacement of 64-9144?

All 64-9144 units undergo pre-shipment inspection (PSI). If there is an issue with 64-9144, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 64-9144 part is unused and in its original packaging.

Return procedure for 64-9144:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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