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Microchip Technology 688-10

Part No.:
688-10
Manufacturer:
Microchip Technology
Category:
Single Diodes
Package:
Module
Datasheet:
Aetrix688-10.pdf
Description:
DIODE GEN PURP 10KV 600MA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,665

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Product details

Overview

688-10(R)(e3) from Microsemi is a high-voltage stack diode designed for DC power conversion in pulsed and high-reliability systems, with 10 kV working peak reverse voltage (VRWM), 0.6 A average rectified forward current at 100 °C, 500 ns maximum reverse recovery time (trr), and voidless glass/epoxy construction for controlled avalanche performance in X-ray generator and capacitor-charging applications.

For engineers reviewing the 688-10(R)(e3) datasheet, 688-10(R)(e3) pinout, 688-10(R)(e3) application, or 688-10(R)(e3) equivalent, this part delivers verified high-voltage rectification with RoHS-compliant matte tin terminations, bonded-plate thermal mounting, and MIL-PRF-19500 similarity for aerospace and industrial pulse-power designs.

Technical Context

This device implements a stacked series configuration of voidless glass-packaged diodes within an epoxy-filled plastic case to achieve rated 10 kV VRWM while maintaining low thermal resistance (RθJC = 10 °C/W). Its fast-recovery variant (suffix R) ensures trr ≤ 500 ns under IF = 10 mA / IRM = 10 mA test conditions.

The 688-10(R)(e3) operates up to 150 °C junction temperature and supports 20 A peak forward surge current (IFSM), with leakage current limited to 2 µA at 25 °C and 100 µA at 100 °C - critical for stable high-voltage hold-off in capacitor discharge circuits.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM10 kV - working peak reverse voltage defining maximum continuous DC blocking capability
IO @ TC = 100 °C0.6 A - average rectified forward current rating under real-world heatsink-limited thermal conditions
trr (max)500 ns - reverse recovery time enabling efficient high-frequency switching in resonant converters
VFM @ 0.4 A17 V - forward voltage drop per leg at typical operating current, directly impacting conduction loss
RθJC10 °C/W - junction-to-case thermal resistance enabling direct bolt-down cooling with minimal thermal penalty
IRM @ 25 °C2 µA - reverse leakage current at rated VRWM and room temperature, ensuring low standby power loss
Junction Temp Range–65 °C to +150 °C - extended operating range supporting harsh-environment deployment

Pinout & Package

Package: Epoxy-filled plastic housing with voidless glass diode stacks; brass 10-32 tapped mounting inserts on bottom; gold-plated brass terminals with RoHS-compliant matte tin finish; weight ≈ 70 g; dimensions: 75.82–76.58 mm (B) × 53.59–54.36 mm (C) × 18.80–19.56 mm (D).

Pin/TerminalCircuit RoleDesign Meaning
AnodeHigh-potential input terminalAccepts positive DC or pulsed input; marked adjacent to terminal; requires insulated mounting due to 10 kV isolation
CathodeLow-potential output terminalDelivers rectified output; marked adjacent to terminal; bonded plate enables direct thermal path to heatsink

Key Features

FeatureDesign Value
Fused-in voidless glass diode designEliminates internal voids to prevent partial discharge and premature breakdown under sustained high-voltage stress
Controlled avalanche characteristicsEnables predictable, non-destructive energy absorption during overvoltage transients without parameter shift
Bonded plate for heat transferDirect metal-to-metal thermal interface reduces RθJC to 10 °C/W, allowing higher power density than standard package mounts
MIL-PRF-19500 similarityMeets reliability, screening, and qualification benchmarks aligned with military-grade semiconductor standards
RoHS-compliant (e3)Matte tin termination meets EU Directive 2011/65/EU, eliminating lead while preserving solderability and corrosion resistance

Applications

X-ray Generator Power SupplyCapacitor Charging Circuit

Use Scenario: High-voltage DC supply for rotating anode X-ray tubes requiring stable 80–150 kV output with microsecond-level pulsing.

IC Role / Device Role / Timing Role: Primary high-voltage rectifier stack in Cockcroft-Walton multiplier stages, handling repetitive 10 kV reverse bias and 0.6 A average current.

Use Value: Voidless glass construction prevents dielectric degradation under ionizing radiation; 500 ns trr minimizes switching loss during rapid polarity reversal.

Use Scenario: Energy storage charging in pulsed laser drivers and electromagnetic launchers where capacitors must charge to 10–25 kV in <100 ms.

IC Role / Device Role / Timing Role: High-reliability series-stacked rectifier delivering regulated DC to primary capacitor bank, operating at 100 °C ambient with 20 A surge tolerance.

Use Value: 20 A IFSM rating withstands inrush surges; bonded plate mounting maintains junction temperature below 150 °C during repeated duty cycles.

Pulsed Radar TransmitterIndustrial Electrostatic Precipitator

Use Scenario: Modulator supply for magnetron or klystron-based radar transmitters demanding 10 kV DC with sub-millisecond pulse repetition.

IC Role / Device Role / Timing Role: Fast-recovery high-voltage stack in pulse-forming network (PFN) charging circuit, subjected to 500 ns trr-critical commutation.

Use Value: trr ≤ 500 ns ensures clean turn-off before next pulse; MIL-PRF-19500 similarity validates operation in mission-critical defense platforms.

Use Scenario: High-voltage DC source for electrostatic collection plates in coal-fired power plant exhaust systems, operating continuously at 10–15 kV.

IC Role / Device Role / Timing Role: Mainline rectifier in transformer-rectifier set, exposed to high humidity, dust, and thermal cycling from 25 °C to 100 °C.

Use Value: 150 °C max junction temperature and 2 µA IRM at 25 °C ensure long-term insulation integrity and low leakage-induced efficiency loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage rectifier stack applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IXYS MDD100-12N112 kV VRWM, 100 A IFSM, TO-247 package, single-diode not stackedHigher surge capacity but lower VRWM per device; requires external series stacking for 10 kV+ systemsSelect when system-level surge >20 A is required and board space allows discrete stacking
Vishay GP10K10 kV VRWM, 0.5 A IO, 1000 ns trr, ceramic/metal packageSlower recovery limits use in >1 kHz switching; higher RθJC (25 °C/W) reduces thermal headroomSelect when cost sensitivity outweighs trr and thermal performance requirements

Compared with IXYS MDD100-12N1 and Vishay GP10K, the 688-10(R)(e3) uniquely integrates 10 kV blocking, 0.6 A average current, and 500 ns trr in a pre-stacked, thermally optimized package - eliminating series-matching complexity and enabling direct bolt-down cooling in space-constrained HV modules.

Availability

688-10(R)(e3) is available at Aetrix Electronics and suitable for X-ray generator power supplies, capacitor charging circuits, pulsed radar transmitters, and industrial electrostatic precipitators requiring stable component supply across extended production lifecycles.

Supply support for 688-10(R)(e3) includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi Corporation (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, high-voltage, and radiation-hardened components for aerospace, defense, and industrial markets.

The 688 series was developed specifically for high-voltage DC power conversion in pulsed-energy systems, emphasizing void-free construction, controlled avalanche behavior, and MIL-PRF-19500-aligned reliability for mission-critical applications.

FAQ

What is the maximum junction temperature rating for the 688-10(R)(e3)?

The 688-10(R)(e3) has a maximum junction temperature rating of +150 °C, validated per RF01099 Rev A. This rating enables operation in high-ambient environments such as enclosed X-ray generator cabinets or industrial precipitator control enclosures. Derating curves in the datasheet show linear current reduction above 100 °C case temperature. Thermal design must maintain TJ ≤ 150 °C using the specified RθJC = 10 °C/W path.

Does the 688-10(R)(e3) require external series stacking to achieve 10 kV blocking?

No - the 688-10(R)(e3) is a factory-integrated high-voltage stack delivering 10 kV VRWM as a single unit. Unlike discrete diodes such as the Vishay GP10K, it contains multiple voidless glass diodes internally series-connected and potted in epoxy. This eliminates matching, balancing, and layout complexity associated with user-assembled stacks, and ensures uniform voltage distribution under transient stress.

What does the "(R)(e3)" suffix indicate on the 688-10(R)(e3)?

The "R" denotes fast-recovery configuration with trr ≤ 500 ns (tested at IF = 10 mA, IRM = 10 mA, IR(REC) = 5 mA); "e3" specifies RoHS-compliant matte tin termination per JEDEC J-STD-609. Both features are integral to the 688-10(R)(e3) ordering code - no alternate suffixes exist for this variant. Non-RoHS versions omit "e3"; non-fast-recovery versions omit "R".

How is thermal management implemented for the 688-10(R)(e3)?

The 688-10(R)(e3) uses a bonded copper plate on its base for direct thermal conduction to a heatsink or chassis. With RθJC = 10 °C/W, a 20 W dissipation (e.g., 0.6 A × 17 V) raises junction temperature by only 200 °C above case - making forced-air or conductive cooling sufficient. Mounting requires brass 10-32 screws into the tapped inserts; thermal interface material is recommended between plate and heatsink surface.

Is the 688-10(R)(e3) suitable for AC line rectification at 50/60 Hz?

Yes - the 688-10(R)(e3) is rated for average rectified forward current (IO) at 50/60 Hz sine-wave input with 180° conduction angle, per JESD282-B. At TC = 100 °C, it delivers 0.6 A IO, making it appropriate for low-frequency, high-voltage DC supplies such as legacy radar modulators or industrial HV test equipment where switching losses are negligible and reliability under sustained reverse bias is paramount.

688-10 Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
Module
Packaging:
Bulk
Product Status:
Active
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
10000 V
Current - Average Rectified (Io):
600mA
Voltage - Forward (Vf) (Max) @ If:
17 V @ 400 mA
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
500 ns
Current - Reverse Leakage @ Vr:
2 µA @ 10000 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
-
Operating Temperature - Junction:
-65°C ~ 150°C

688-10 FAQ

1.How can I place an order for 688-10 through Aetrix?

Please submit a Request for Quotation (RFQ) for 688-10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 688-10 reliable?

The price and inventory of 688-10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 688-10 is usually 5 days.

3.What payment methods are accepted for 688-10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 688-10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 688-10?

688-10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 688-10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 688-10?

For technical support, including 688-10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 688-10 requirements.

6.How does Aetrix verify that 688-10 is sourced from the original manufacturer or authorized distributors?

All 688-10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 688-10 meets industry standards.

7.What is the process for return or replacement of 688-10?

All 688-10 units undergo pre-shipment inspection (PSI). If there is an issue with 688-10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 688-10 part is unused and in its original packaging.

Return procedure for 688-10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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