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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 94-2113

Name: 94-2113
Brand: Infineon Technologies
SKU: 94-2113
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 94-2113

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: 94-2113.pdf

Description:: MOSFET N-CH 30V 116A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRL2203NSPbF from Infineon Technologies (formerly International Rectifier) is a 30V N-channel enhancement-mode power MOSFET in D2PAK surface-mount package, featuring 7.0 mΩ R_DS(on) at V_GS = 10 V, 116 A continuous drain current at T_C = 25°C, and fully avalanche-rated operation up to 175°C junction temperature - used in high-current DC-DC converter primary switches and motor drive half-bridges.

For engineers reviewing the IRL2203NSPbF datasheet, IRL2203NSPbF pinout, IRL2203NSPbF application, or IRL2203NSPbF equivalent, key selection criteria include its ultra-low on-resistance for conduction loss minimization, fast switching (t_r = 160 ns, t_f = 66 ns), 100% gate resistance tested reliability, and integrated body diode with 56–84 ns reverse recovery time for synchronous rectification and freewheeling.

Technical Context

This MOSFET employs advanced HEXFET® process technology to achieve optimized cell density and low specific on-resistance. Its planar gate structure supports stable threshold voltage (1.0–3.0 V) and high transconductance (73 S), enabling robust gate drive compatibility down to 4.5 V.

The device integrates a co-packaged intrinsic p-n junction body diode rated for 60 A continuous source current and 1320 mJ single-pulse avalanche energy. Thermal design is enabled by R_θJC = 0.85°C/W and R_θJA = 40°C/W (PCB mount), supporting high-power dissipation in compact surface-mount layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage before avalanche; sets upper limit for bus voltage in 24 V systems.
R_DS(on)	7.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 116 A; critical for thermal management in high-current PCB traces.
I_D (T_C = 25°C)	116 A - Continuous drain current rating under ideal heatsinking; limited to 75 A by package thermal capacity.
Q_g	60 nC - Total gate charge determines driver strength requirement; impacts switching loss in 100–500 kHz converters.
t_r/t_f	160 ns / 66 ns - Fast edge rates reduce transition losses but require careful layout to suppress EMI and dv/dt-induced shoot-through.
E_AS	1320 mJ - Single-pulse avalanche energy rating ensures ruggedness during inductive load turn-off without external snubbers.
V_GS(th)	1.0–3.0 V - Low threshold enables logic-level drive from 3.3 V or 5 V microcontrollers in battery-powered systems.

Pinout & Package

D2PAK (TO-262) surface-mount power package with isolated tab (drain-connected), optimized for high-current PCB mounting and thermal transfer via exposed copper pad. Package footprint matches JEDEC MS-013AC standard.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main power output terminal	Electrically connected to drain; requires insulated thermal pad or direct copper pour for heatsinking.
Lead 1 (Source)	Power return / reference node	Low-inductance source path; connects to ground plane or low-side switch node in half-bridge topologies.
Lead 2 (Gate)	Control input	High-impedance MOSFET gate; requires series resistor (1.8–25 Ω typical) to damp ringing and control dV/dt.
Lead 3 (Source)	Power return / reference node	Dual-source configuration reduces source inductance (L_S = 4.5–7.5 nH); critical for minimizing commutation voltage spikes.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.0 mΩ enables <0.8 W conduction loss at 100 A, reducing heatsink size in 48 V telecom PSUs.
Fully avalanche-rated	1320 mJ E_AS allows safe operation during inductive switching faults without derating or external clamping.
100% R_G tested	Gate resistance verified 0.2–3.0 Ω per unit, ensuring consistent drive timing and preventing gate oscillation.
Logic-level compatible	Operates fully enhanced at V_GS ≥ 4.5 V, supporting direct drive from STM32, PIC, or FPGA GPIOs.
Lead-free (PbF)	RoHS-compliant finish with matte tin plating; qualified for reflow profiles up to 260°C peak.

Applications

DC-DC Converter Primary Switch

Brushless DC Motor Phase Leg

Use Scenario: High-efficiency 24 V input, 12 V/50 A output synchronous buck converter in industrial PLC power supplies.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET switch operating at 200 kHz with 50% duty cycle and 100 A peak current.

Use Value: 7.0 mΩ R_DS(on) limits conduction loss to 0.7 W at full load, enabling natural convection cooling instead of forced air.

Use Scenario: 3-phase inverter driving 1 kW BLDC motor in automated guided vehicle (AGV) traction system.

IC Role / Device Role / Timing Role: Low-side switch in 60 V bus half-bridge leg, commutated at ≤15 kHz with 116 A peak phase current.

Use Value: Dual-source leads and 4.5 nH L_S minimize voltage overshoot during 110 A/µs di/dt events, eliminating need for external gate clamps.

Hot-Swap OR-ing FET

UPS Inverter Output Stage

Use Scenario: Redundant 48 V DC power distribution in telecom rack with automatic fault isolation.

IC Role / Device Role / Timing Role: Back-to-back configured N-MOSFET for bidirectional current blocking and controlled turn-on slew rate.

Use Value: 1.0–3.0 V V_GS(th) enables precise gate biasing via op-amp feedback loop to limit inrush to <5 A during hot-insertion.

Use Scenario: 1 kVA online UPS with pure-sine-wave inverter stage converting 360 V DC bus to 230 V AC output.

IC Role / Device Role / Timing Role: High-current output switch in H-bridge topology, handling 100 A peak line current with 50 Hz fundamental + 3rd harmonic content.

Use Value: 175°C max junction temperature and 1320 mJ E_AS ensure reliable operation during sustained overload and grid fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N3LLH6	R_DS(on) = 5.2 mΩ @ 10 V; smaller PowerFLAT 5x6 package; lower Q_g (45 nC)	Better suited for space-constrained 30 V synchronous rectifiers; not rated for >100 A continuous due to thermal limits.	Select when board area is constrained and gate drive capability is limited; verify thermal interface for >80 A operation.
IXTP120N04S5	R_DS(on) = 3.8 mΩ @ 10 V; TO-220 package; higher C_iss (3900 pF); no avalanche rating	Higher efficiency at low current but lacks ruggedness for inductive switching; requires external avalanche protection.	Prefer only in low-di/dt, non-inductive loads where avalanche stress is absent; avoid in motor drives or DC-DC primaries.

Compared with STL220N3LLH6 and IXTP120N04S5, the IRL2203NSPbF delivers balanced performance: superior thermal robustness via D2PAK package and full avalanche rating, while maintaining competitive R_DS(on) and gate charge for medium-frequency switching - making it optimal for industrial motor drives and telecom power where reliability outweighs minimal R_DS(on) gains.

Availability

IRL2203NSPbF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and UPS inverters requiring stable component supply across multi-year production cycles.

Supply support for IRL2203NSPbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with roots in International Rectifier's power MOSFET innovation.

The HEXFET® product line was engineered for high-current, high-reliability power conversion - targeting applications demanding low conduction loss, fast switching, and rugged transient tolerance in harsh thermal environments.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL2203NSPbF supports 82 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2PAK package and must be validated against actual PCB copper area, airflow, and ambient temperature in the end application.

Does this MOSFET require a gate driver IC, or can it be driven directly from a microcontroller?

A microcontroller GPIO can drive the IRL2203NSPbF directly only if output current capability exceeds 10 mA and V_OH ≥ 4.5 V. For reliable 200 kHz switching, a dedicated gate driver (e.g., IR2110, TC4427) is recommended to deliver 60 nC charge within <100 ns and suppress ringing caused by 0.2–3.0 Ω gate resistance variation.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the integrated body diode has 56–84 ns reverse recovery time and 110–170 nC Q_rr, enabling use in synchronous rectification at ≤300 kHz. However, for highest efficiency, an external Schottky diode or complementary MOSFET is preferred due to lower forward voltage than the 1.2 V V_SD body diode drop.

How does the D2PAK package compare thermally to TO-220 and TO-263 variants of the same die?

The D2PAK offers R_θJC = 0.85°C/W - significantly better than TO-220 (1.5°C/W) and comparable to TO-263 (0.9°C/W). Its exposed drain tab provides superior thermal transfer to PCB copper, but requires proper solder paste stencil design and 100% void-free reflow to achieve rated performance.

94-2113 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 116A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 60A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 4.5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3290 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 180W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

94-2113 FAQ

1.How can I place an order for 94-2113 through Aetrix?

Please submit a Request for Quotation (RFQ) for 94-2113 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 94-2113 reliable?

The price and inventory of 94-2113 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 94-2113 is usually 5 days.

3.What payment methods are accepted for 94-2113?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 94-2113 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 94-2113?

94-2113 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 94-2113 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 94-2113?

For technical support, including 94-2113 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 94-2113 requirements.

6.How does Aetrix verify that 94-2113 is sourced from the original manufacturer or authorized distributors?

All 94-2113 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 94-2113 meets industry standards.

7.What is the process for return or replacement of 94-2113?

All 94-2113 units undergo pre-shipment inspection (PSI). If there is an issue with 94-2113, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 94-2113 part is unused and in its original packaging.

Return procedure for 94-2113:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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