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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 94-3250

Name: 94-3250
Brand: Infineon Technologies
SKU: 94-3250
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 94-3250

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MQ

Datasheet:: 94-3250.pdf

Description:: MOSFET N-CH 30V 12A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF6604 from Infineon Technologies is a 30 V, 12 A N-channel Power MOSFET in DirectFET® package, optimized for synchronous buck converter control FETs with 11.5 mΩ R_DS(on) at V_GS = 7.0 V, 17 nC total gate charge, and ultra-low 0.7 mm profile. It delivers high efficiency in CPU core DC-DC converters operating at elevated switching frequencies.

For engineers reviewing the IRF6604 datasheet, IRF6604 pinout, IRF6604 application, or IRF6604 equivalent, key selection criteria include R_DS(on)/Q_g trade-off, thermal resistance (R_θJC = 3.0 °C/W), dual-sided cooling capability, and body diode recovery performance (Q_rr = 26–39 nC) in high-density power stages.

Technical Context

The IRF6604 employs HEXFET® silicon with DirectFET® packaging to minimize conduction loss (R_DS(on) = 9.0 mΩ typ. @ 7.0 V) and switching loss (Q_gd = 6.3 nC, Q_oss = 9.5 nC). Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) and negative temperature coefficient (−4.5 mV/°C) support stable operation across −40°C to +150°C junction range.

Designed specifically for high-frequency synchronous buck topologies, it features low package inductance and optimized charge distribution (Q_gs1 = 4.1 nC, Q_gs2 = 1.0 nC) to suppress C_dv/dt turn-on risk. The body diode exhibits V_SD = 0.94–1.2 V and t_rr = 31–47 ns under I_S = 9.6 A, enabling efficient reverse recovery in hard-switched applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 12 V input bus and 5 V/3.3 V output rails in point-of-load converters.
R_DS(on) max	11.5 mΩ @ V_GS = 7.0 V - Enables <1.4 W conduction loss at 12 A RMS, critical for thermally constrained CPU VRMs.
Q_g	17 nC - Low gate drive energy reduces controller loading and enables fast turn-on (<11 ns td(on)) at high f_SW.
R_θJC	3.0 °C/W - Supports >20 W power dissipation with minimal case-to-heatsink ΔT, enabling dual-sided thermal management.
Q_rr	26–39 nC - Quantifies reverse recovery charge of integrated body diode; directly impacts shoot-through loss in synchronous rectification.
I_D @ T_C = 25°C	42 A - Continuous drain current rating under case-cooled conditions, validating robustness in high-current transient events.
V_GS(th)	1.0–3.0 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V gate drivers without level-shifting.

Pinout & Package

IRF6604 uses the DirectFET® M2 package (3.3 mm × 3.3 mm footprint, 0.7 mm height), featuring top-side source and bottom-side drain terminals for dual-sided PCB cooling. No separate gate pad; gate connects via side-terminal on package edge.

Pin/Terminal	Circuit Role	Design Meaning
Top Metal Pad	Source (S)	Primary current return path; serves as thermal interface to top-side heatsink or copper pour.
Bottom Metal Pad	Drain (D)	Main power output node; electrically and thermally connected to PCB ground plane or bottom-side heatsink.
Side Terminal (Left)	Gate (G)	Low-inductance control input; positioned to minimize loop area with adjacent driver IC and decoupling capacitor.

Key Features

Feature	Design Value
Ultra-low profile (0.7 mm)	Enables stacking of multiple power stages in thin VRM modules without mechanical interference or airflow blockage.
Dual-sided cooling architecture	Reduces effective thermal resistance by 80% vs. SO-8 equivalents, allowing >2× power density in space-constrained server CPU regulators.
Optimized R_DS(on)/Q_g ratio	Minimizes combined conduction + switching loss in 300–1000 kHz buck converters powering modern multi-core processors.
Low Q_gd/Q_gs1 ratio	Suppresses C_dv/dt-induced false turn-on during high dV/dt transitions at the switch node, improving system reliability.
Body diode with controlled Q_rr	Reduces cross-conduction losses during dead-time intervals in synchronous rectification, lowering overall converter inefficiency.

Applications

CPU Core Voltage Regulator

GPU Power Delivery Module

Use Scenario: High-current, high-frequency DC-DC conversion supplying dynamic load currents up to 100 A to Intel/AMD desktop/server CPUs.

IC Role / Device Role / Timing Role: Control FET in synchronous buck stage, switching at 500–1000 kHz with precise duty-cycle modulation.

Use Value: 11.5 mΩ R_DS(on) and 17 nC Q_g reduce total power loss by ≥12% vs. legacy SO-8 MOSFETs at 12 A, extending thermal headroom.

Use Scenario: Compact, multi-phase VRM for discrete graphics cards requiring rapid transient response to GPU workload spikes.

IC Role / Device Role / Timing Role: High-side switch in interleaved buck phase, operating with tight gate timing synchronization to minimize ripple.

Use Value: 0.7 mm profile allows vertical stacking of 3+ phases in <8 mm board height, meeting PCIe slot height constraints.

ASIC/FPGA Core Supply

AI Accelerator Power Stage

Use Scenario: Point-of-load regulation for 0.8–1.2 V core rails in high-performance programmable logic devices with sub-100 ns load steps.

IC Role / Device Role / Timing Role: Primary switching element in single-phase buck converter, driven by dedicated PWM controller with adaptive dead-time control.

Use Value: 3.0 °C/W R_θJC enables direct thermal coupling to cold plate, maintaining <95°C junction temp under 30 W sustained load.

Use Scenario: High-efficiency power delivery to AI inference accelerators with burst-mode workloads and >50 A peak current demands.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in multiphase buck converter, leveraging low Q_rr to minimize recovery-related losses during frequent mode transitions.

Use Value: 26–39 nC Q_rr reduces body-diode conduction loss by ~35% compared to standard trench MOSFETs at 500 kHz switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IRF6622	Higher R_DS(on) (14.5 mΩ), same Q_g (17 nC), identical DirectFET® M2 package	Lower current handling (10 A vs. 12 A); suitable only for ≤8 A continuous loads	Select when cost sensitivity outweighs marginal R_DS(on) penalty and thermal margin is sufficient.
Vishay SiR626DP	Same V_DSS (30 V), lower R_DS(on) (9.0 mΩ), higher Q_g (22 nC), PowerPAK® SO-8 package (1.05 mm height)	Higher profile limits dual-sided cooling; requires larger PCB area and reduced airflow clearance	Prefer when lowest possible conduction loss dominates over switching loss and board thickness budget allows.

Compared with IRF6604, IRF6622 trades 26% higher R_DS(on) for identical gate drive and thermal footprint, while SiR626DP achieves 22% lower conduction loss but sacrifices 29% more gate energy and adds 0.35 mm height-critical in ultra-thin VRMs.

Availability

IRF6604 is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and AI accelerator power stages requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF6604 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF6604 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and datacenter power systems where thermal and space constraints dominate design priorities.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The IRF6604 has a specified operating junction temperature range of −40°C to +150°C. For continuous operation under rated current, junction temperature must remain ≤150°C, verified using R_θJC = 3.0 °C/W and measured case temperature. Derating is required above 70°C ambient per the linear derating factor of 0.018 W/°C shown in the Absolute Maximum Ratings table.

Does the IRF6604 require a gate resistor for stability in high-speed switching?

Yes-a gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop and prevent unintended oscillation. The low Q_gd/Q_gs1 ratio minimizes C_dv/dt susceptibility, but external gate resistance remains essential for robust EMI control and driver IC protection in 500+ kHz applications.

Can the IRF6604 be used in parallel configurations for higher current capacity?

Yes-its positive R_DS(on) temperature coefficient (−4.5 mV/°C for V_GS(th)) ensures inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors are mandatory to avoid dynamic imbalance; thermal coupling between devices must also be uniform to maintain equal junction temperatures.

Is the body diode suitable for synchronous rectification without external Schottky assistance?

The integrated body diode supports synchronous rectification in buck converters, with V_SD = 0.94–1.2 V and Q_rr = 26–39 nC at I_S = 9.6 A. While functional, its recovery characteristics are inferior to discrete Schottky diodes; use is acceptable in cost-sensitive designs where <5% efficiency loss is tolerable, but not recommended for >95% efficiency targets.

94-3250 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MQ

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 12A (Ta), 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 7V

Rds On (Max) @ Id, Vgs:: 11.5mOhm @ 12A, 7V

Vgs(th) (Max) @ Id:: 2.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 26 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2270 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.3W (Ta), 42W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MQ

94-3250 FAQ

1.How can I place an order for 94-3250 through Aetrix?

Please submit a Request for Quotation (RFQ) for 94-3250 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 94-3250 reliable?

The price and inventory of 94-3250 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 94-3250 is usually 5 days.

3.What payment methods are accepted for 94-3250?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 94-3250 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 94-3250?

94-3250 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 94-3250 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 94-3250?

For technical support, including 94-3250 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 94-3250 requirements.

6.How does Aetrix verify that 94-3250 is sourced from the original manufacturer or authorized distributors?

All 94-3250 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 94-3250 meets industry standards.

7.What is the process for return or replacement of 94-3250?

All 94-3250 units undergo pre-shipment inspection (PSI). If there is an issue with 94-3250, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 94-3250 part is unused and in its original packaging.

Return procedure for 94-3250:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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