Infineon Technologies 94-3316

Overview

IRLL014N from International Rectifier is a logic-level N-channel enhancement-mode power MOSFET in SOT-223 package, rated for 55V V_DSS, 2.0A continuous drain current at 25°C, 0.14Ω R_DS(on) at V_GS = 10V, and fully avalanche-rated. It serves as a low-side switching device in DC-DC converters, LED drivers, and load-switching circuits where compact size and thermal efficiency are critical.

For engineers reviewing the IRLL014N datasheet, IRLL014N pinout, IRLL014N application, or IRLL014N equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0V), 9.5nC total gate charge, 41ns reverse recovery time, and SOT-223 thermal performance (R_θJA = 90°C/W on FR-4).

Technical Context

This HEXFET device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability (E_AS = 32mJ). Its body diode exhibits 1.0V forward drop at 2.0A and 41ns reverse recovery time under standardized test conditions.

The MOSFET features fast switching dynamics (t_r = 4.9ns, t_f = 2.9ns), high dv/dt immunity (7.2V/ns), and operates across –55°C to +150°C junction temperature range. Gate charge distribution (Q_gs = 1.1nC, Q_gd = 3.0nC) supports efficient PWM control in high-frequency DC-DC topologies.

Key Specifications

Pinout & Package

SOT-223 (TO-261AA) surface-mount package with exposed drain tab for enhanced heatsinking; compatible with vapor-phase, infrared, and wave soldering processes. The three-terminal configuration supports automated pick-and-place assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with DMN2004LK-7 and SI2302DS-T1-GE3, the IRLL014N uniquely balances 55V blocking, 2.0A current, and SOT-223 thermal performance-making it the only option among the three qualified for 24V industrial load switching with >1W dissipation.

Availability

IRLL014N is available at Aetrix Electronics and suitable for LED drivers, USB power switches, DC-DC buck converters, and industrial solenoid controls requiring stable component supply and long-term manufacturability.

Supply support for IRLL014N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) is a pioneer in power semiconductor design, specializing in high-efficiency MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing applications.

The HEXFET® product line was engineered for high-power-density switching in space-constrained systems, emphasizing low R_DS(on), fast switching, and rugged avalanche performance-exactly as realized in the IRLL014N.

FAQ

Is IRLL014N suitable for 3.3V microcontroller gate drive?

Yes. With a gate threshold voltage of 1.0–2.0V and full enhancement achievable at V_GS = 4.5V, the IRLL014N reliably switches at 3.3V logic levels. At 3.3V, R_DS(on) rises to ~0.28Ω (per datasheet Fig. 4), supporting up to ~1.0A continuous current with acceptable thermal margin on standard PCBs.

What is the maximum continuous current at 70°C ambient?

The datasheet specifies 1.6A continuous drain current at T_A = 70°C with V_GS = 10V. This derating accounts for thermal resistance (90°C/W) and junction temperature limit (150°C), yielding a 80°C allowable rise - confirming safe operation at 1.6A without forced airflow or heatsink augmentation.

Does IRLL014N require an external flyback diode when driving inductive loads?

No. The device's fully rated avalanche capability (E_AS = 32mJ) allows safe turn-off of inductive loads like solenoids or relays without external clamping. However, for repetitive high-energy switching (>1000 cycles/hour), a Schottky diode across the load improves longevity and reduces peak V_DS overshoot.

Can IRLL014N be used in parallel configurations?

Yes, but with caution. Its positive R_DS(on) temperature coefficient promotes current sharing, yet gate charge mismatch may cause transient imbalance. Use individual gate resistors (≥10Ω) and matched layout to minimize loop inductance; parallel operation is validated only up to two devices in identical thermal environments per IR application note AN-1001.