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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies 94-3412PBF

Name: 94-3412PBF
Brand: Infineon Technologies
SKU: 94-3412PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 94-3412PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: 94-3412PBF.pdf

Description:: MOSFET N-CH 30V 14A 8SO

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF7811WPbF from Infineon Technologies is an N-channel HEXFET® Power MOSFET optimized for synchronous buck converters in CPU core power delivery. It features 9.0 mΩ R_DS(on) at V_GS = 4.5 V, 22 nC total gate charge, and 100% tested gate resistance (R_G = 2.0–4.0 Ω), enabling high-efficiency DC-DC conversion in microprocessor VRMs.

For engineers reviewing the IRF7811WPbF datasheet, IRF7811WPbF pinout, IRF7811WPbF application, or IRF7811WPbF equivalent, key selection criteria include C_dv/dt immunity for synchronous FET operation, low Q_sw/Q_oss trade-off (10.1 nC / 12 nC), and SO-8 thermal performance (R_θJA = 40 °C/W).

Technical Context

This MOSFET employs trench-gate HEXFET technology to minimize conduction and switching losses simultaneously. Its 9.0 mΩ R_DS(on) at 4.5 V gate drive and 16.3 nC gate charge for synchronous-FET operation support high-frequency (>500 kHz) buck stages with tight voltage regulation.

The device integrates robust C_dv/dt-induced turn-on immunity and a 1.0 V gate threshold (V_GS(th)), ensuring stable operation under fast transient load conditions typical in CPU core supplies. Body diode reverse recovery charge (Q_rr = 45 nC) is characterized with 700 A/µs di/dt and 16 V V_DS.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V input synchronous buck stages
R_DS(on)	9.0 mΩ @ V_GS = 4.5 V - Enables ≤1.5 W conduction loss at 15 A output current
Q_G	22 nC - Total gate charge determines driver strength requirement for <10 ns rise/fall times
Q_sw	10.1 nC - Switching charge directly impacts turn-on energy loss in high-frequency operation
R_θJA	40 °C/W - Junction-to-ambient thermal resistance on standard PCB defines max continuous power (3.1 W)
V_GS(th)	1.0 V - Low threshold enables reliable turn-on with 3.3 V or 5 V gate drivers
C_oss	400 pF @ V_DS = 16 V - Output capacitance affects zero-voltage switching feasibility and dead-time design

Pinout & Package

IRF7811WPbF is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. The package supports vapor phase, infrared, convection, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 5, 6, 7	Drain (D)	Seven parallel drain terminals connected to internal die and exposed pad - primary current path and thermal conduction path
8	Gate (G)	Single gate input - controls channel conduction; requires low-inductance routing due to 22 nC Q_G
Source (S)	Terminals 1–7 are internally tied to source via bond wires in dual-die configuration	Source connection shared across all pins except Gate; common return for load current and gate drive reference

Key Features

Feature	Design Value
Optimized R_DS(on)/Q_G ratio	9.0 mΩ / 22 nC - balances conduction loss and switching loss for >90% efficiency in 500 kHz–1 MHz VRMs
C_dv/dt-induced turn-on immunity	Characterized and enhanced - prevents false turn-on during high dV/dt transitions in synchronous rectification
100% R_G tested	R_G = 2.0–4.0 Ω - ensures predictable gate drive timing and reduces risk of oscillation
Low Q_oss	12 nC @ V_DS = 16 V - minimizes capacitive switching loss and improves light-load efficiency

Applications

CPU Core VRM

GPU Power Delivery

Use Scenario: High-current, fast-transient point-of-load regulator supplying modern x86 or ARM processors.

IC Role / Device Role / Timing Role: Synchronous high-side FET in multiphase buck converter; switches at 500–1000 kHz with precise dead-time control.

Use Value: 9.0 mΩ R_DS(on) limits conduction loss to <2 W at 15 A, while 10.1 nC Q_sw enables efficient high-frequency operation.

Use Scenario: Dual-phase or triple-phase VRM powering discrete graphics processing units with dynamic load steps >50 A/µs.

IC Role / Device Role / Timing Role: Low-side synchronous FET; body diode conduction minimized by fast gate drive and low Q_rr (45 nC).

Use Value: 45 nC reverse recovery charge reduces body-diode conduction loss and EMI during forced continuous conduction mode (FCCM).

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: Compact 3.3 V or 1.2 V regulator for DDR4/DDR5 memory modules with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Single-phase buck FET operating at 1 MHz; leverages SO-8 thermal performance (R_θJL = 20 °C/W) for board-level heat spreading.

Use Value: Exposed drain pad and 7-pin drain configuration enable >3 W power dissipation on 1-inch² copper area without heatsink.

Use Scenario: High-density power stage for FPGA or ASIC-based AI inference accelerators requiring sub-1 V, >100 A rail stability.

IC Role / Device Role / Timing Role: Parallel-configured high-side FET in interleaved multiphase topology; gate drive synchronized to minimize current imbalance.

Use Value: Tight R_DS(on) distribution (9.0–12 mΩ) and matched Q_G ensure balanced current sharing across paralleled devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7832PbF	R_DS(on) = 5.5 mΩ @ 4.5 V, Q_G = 32 nC - lower on-resistance but higher gate charge	Better for low-frequency, high-current designs where conduction loss dominates	Prefer when thermal budget allows higher drive power and switching frequency ≤300 kHz
SiR872DP-T1-GE3	R_DS(on) = 7.0 mΩ @ 4.5 V, Q_sw = 13.5 nC - tighter R_DS(on) tolerance but higher switching charge	Enhanced reliability for industrial temperature range (−55°C to 175°C)	Select for extended ambient or automotive-adjacent environments requiring wider T_J margin

Compared with IRF7811WPbF, IRF7832PbF trades higher gate drive demand for lower conduction loss, while SiR872DP-T1-GE3 offers improved thermal ruggedness and tighter parametric consistency at the cost of increased Q_sw, making it suitable for thermally constrained or mission-critical deployments.

Availability

IRF7811WPbF is available at Aetrix Electronics and suitable for CPU core VRMs, GPU power delivery systems, and AI accelerator power stages requiring stable component supply and consistent parametric performance across production lots.

Supply support for IRF7811WPbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRF7811WPbF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and data center power applications.

FAQ

What is the maximum continuous drain current for IRF7811WPbF at 90°C case temperature?

The maximum continuous drain current is 13 A at T_L = 90°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area (1 inch²) and accounts for thermal derating from the 14 A rating at 25°C ambient. Operation above this current requires active cooling or reduced duty cycle to maintain T_J ≤ 150°C.

Does IRF7811WPbF support 3.3 V gate drive in synchronous buck topologies?

Yes - its 1.0 V gate threshold voltage and 9.0 mΩ R_DS(on) measured at V_GS = 4.5 V confirm strong enhancement-mode behavior with 3.3 V logic-level drive. However, full R_DS(on) specification is guaranteed only at ≥4.5 V; actual on-resistance at 3.3 V is ~14 mΩ per typical transfer curves, requiring system-level efficiency validation.

How is the SO-8 package of IRF7811WPbF thermally optimized for power dissipation?

The SO-8 package features an exposed drain pad connected to pins 1–7, providing a low-thermal-resistance path (R_θJL = 20 °C/W) from junction to PCB copper. When mounted on 1 inch² of 2-oz copper, it achieves 3.1 W power dissipation at T_A = 25°C, validated by JEDEC-standard thermal testing per JESD51-2 and JESD51-14.

What body diode parameters are critical for synchronous rectification in IRF7811WPbF?

Critical body diode parameters include forward voltage V_SD = 1.25 V at I_S = 15 A and reverse recovery charge Q_rr = 45 nC (di/dt = 700 A/µs). These define conduction loss during dead-time and switching loss during reverse recovery. The low Q_rr minimizes shoot-through risk and EMI generation in high-frequency synchronous operation.

94-3412PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 33 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2335 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SO

94-3412PBF FAQ

1.How can I place an order for 94-3412PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for 94-3412PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 94-3412PBF reliable?

The price and inventory of 94-3412PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 94-3412PBF is usually 5 days.

3.What payment methods are accepted for 94-3412PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 94-3412PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 94-3412PBF?

94-3412PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 94-3412PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 94-3412PBF?

For technical support, including 94-3412PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 94-3412PBF requirements.

6.How does Aetrix verify that 94-3412PBF is sourced from the original manufacturer or authorized distributors?

All 94-3412PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 94-3412PBF meets industry standards.

7.What is the process for return or replacement of 94-3412PBF?

All 94-3412PBF units undergo pre-shipment inspection (PSI). If there is an issue with 94-3412PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 94-3412PBF part is unused and in its original packaging.

Return procedure for 94-3412PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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