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Infineon Technologies 94-4737

Part No.:
94-4737
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
Aetrix94-4737.pdf
Description:
MOSFET N-CH 30V 33A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,362

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Product details

Overview

IRFR3303 from International Rectifier is a 30V, 33A N-channel D-Pak surface-mount power MOSFET with RDS(on) = 0.031Ω at VGS = 10V, fully avalanche-rated, and optimized for high-efficiency DC-DC converters and motor drive half-bridges. It delivers fast switching (tr = 99ns, tf = 28ns), low gate charge (Qg = 29nC), and operates from −55°C to +150°C junction temperature.

For engineers reviewing the IRFR3303 datasheet, IRFR3303 pinout, IRFR3303 application, or IRFR3303 equivalent, key selection criteria include its 0.031Ω on-resistance at 10V gate drive, 95mJ single-pulse avalanche energy rating, TO-252AA (D-Pak) thermal performance (RθJC = 2.2°C/W), and body diode recovery characteristics (trr = 53–80ns).

Technical Context

This fifth-generation HEXFET uses advanced silicon processing to achieve ultra-low RDS(on) per die area while maintaining rugged unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0V) supports standard 10V logic-level drive, and the integrated body diode features VSD = 1.3V at 18A and controlled reverse recovery (Qrr = 94–140nC).

The device's thermal design centers on the D-Pak package: junction-to-case resistance is 2.2°C/W, enabling 57W power dissipation at TC = 25°C, with linear derating of 0.45W/°C above that point. Its SOA is limited by RDS(on) in the continuous region and by transient thermal impedance in pulse operation.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 30V - Maximum blocking voltage in high-side switch or synchronous rectifier applications
RDS(on) 0.031Ω @ VGS = 10V, ID = 18A - Enables ≤0.5W conduction loss at 40A peak in 12V systems
ID (continuous) 33A @ TC = 25°C - Sustains high-current motor phase or DC-DC primary-side switching
Qg 29nC - Reduces gate driver power demand and enables >500kHz PWM operation with low-loss switching
EAS 95mJ - Supports robust unclamped inductive turn-off without external snubbers in relay drivers or solenoid controls
tr/tf 99ns / 28ns - Minimizes switching transition losses in hard-switched topologies
VSD 1.3V @ IS = 18A - Defines forward drop and power loss during body-diode conduction in synchronous rectification

Pinout & Package

Package: TO-252AA (D-Pak), surface-mount, thermally enhanced with exposed drain pad. Dimensions conform to JEDEC outline; recommended footprint per AN-994.

Pin/Terminal Circuit Role Design Meaning
1 - Gate Control terminal Receives 10V logic-level signal; requires <29nC charge to fully enhance; sensitive to ESD (±20V max)
2 - Drain High-side power output Internally connected to exposed metal tab; must be soldered to PCB copper pour for thermal and current path
3 - Source Power return / reference node Common return for load current and gate drive loop; low-inductance layout critical for dv/dt immunity
4 - Drain Secondary drain connection Parallel path to Pin 2; reduces package inductance and improves current sharing in high-frequency switching

Key Features

Feature Design Value
Ultra-low RDS(on) 0.031Ω enables <1W conduction loss at 18A, reducing heatsink requirements in space-constrained 12V/24V systems
Fully avalanche-rated 95mJ single-pulse energy withstand allows reliable operation under inductive load switching without snubber circuits
Fast body diode recovery trr = 53–80ns and Qrr = 94–140nC minimize cross-conduction loss and EMI in synchronous buck converters
Thermally optimized D-Pak RθJC = 2.2°C/W supports 57W dissipation at case temperature ≤25°C; ideal for PCB-mounted thermal management
Logic-level gate drive VGS(th) = 2.0–4.0V ensures full enhancement with standard microcontroller GPIO or gate driver ICs (e.g., IR2110)

Applications

Brushless DC Motor Driver 12V Automotive DC-DC Converter

Use Scenario: Half-bridge leg in 3-phase BLDC inverter for HVAC blowers or power seats.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 33A peak phase current with <100ns switching transitions.

Use Value: Low RDS(on) and fast switching reduce conduction and switching losses, improving efficiency from 89% to 92% at 10A load.

Use Scenario: Primary-side switch in 12V-to-5V/3.3V synchronous buck converter for infotainment head units.

IC Role / Device Role / Timing Role: Main power switch operating at 300–500kHz; body diode conducts during dead-time.

Use Value: 1.3V VSD and low Qrr cut reverse-recovery loss by 35% vs. standard MOSFETs, lowering thermal stress on PCB.

Industrial Solenoid Controller LED Constant-Current Driver

Use Scenario: High-side switch driving 24V/2A solenoids in PLC I/O modules with rapid on/off cycling.

IC Role / Device Role / Timing Role: Unclamped inductive switch; absorbs stored energy via avalanche breakdown during turn-off.

Use Value: 95mJ EAS rating eliminates need for external flyback diodes or RC snubbers, simplifying BOM and layout.

Use Scenario: Dimmable constant-current switch in high-brightness LED streetlight drivers (12–48V input).

IC Role / Device Role / Timing Role: PWM-controlled current sink; switches at 1–20kHz to regulate average LED current.

Use Value: Low gate charge (29nC) reduces driver IC loading and enables precise dimming resolution down to 0.1% duty cycle.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
Vishay SIHFU330 RDS(on) = 0.035Ω (higher), Qg = 32nC (higher), same TO-252AA package and 30V rating Marginally lower efficiency in high-frequency converters due to increased switching and conduction loss Acceptable where cost sensitivity outweighs 3–5% efficiency penalty and thermal margin is sufficient
ON Semiconductor NTMFS4C02N RDS(on) = 0.028Ω (lower), Qg = 26nC (lower), but rated only to 175°C TJ (vs. 150°C for IRFR3303) Better conduction loss at high ambient, but reduced avalanche ruggedness (EAS not specified) Preferred for high-efficiency, low-temperature designs; avoid in unclamped inductive loads requiring avalanche survival

Compared with SIHFU330 and NTMFS4C02N, the IRFR3303 offers the best balance of proven avalanche ruggedness, thermal reliability at 150°C, and mature manufacturability-making it preferred for automotive and industrial control where field failure risk must be minimized.

Availability

IRFR3303 is available at Aetrix Electronics and suitable for brushless DC motor drives, 12V automotive DC-DC converters, and industrial solenoid controllers requiring stable component supply and long-term production continuity.

Supply support for IRFR3303 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power MOSFET design, known for HEXFET® technology and high-reliability discrete semiconductors targeting industrial and automotive markets.

The IRFR/U3303 belongs to the fifth-generation HEXFET family, engineered specifically for high-current, surface-mount power switching in space-constrained environments where thermal performance and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR3303 supports 21A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures junction temperature remains ≤150°C under steady-state conditions with adequate PCB copper area.

Can IRFR3303 be used in avalanche mode repeatedly?

Yes-the device is fully rated for repetitive avalanche operation with EAR = 5.7mJ per pulse. However, each event must comply with the SOA curve in Figure 8, limiting pulse width and duty cycle to prevent cumulative junction heating beyond 150°C.

Is the TO-252AA package lead-free and RoHS-compliant?

Yes-IRFR3303 is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and supports standard vapor-phase and infrared reflow profiles.

How does the dual-drain configuration (Pins 2 and 4) improve performance?

Pins 2 and 4 are internally connected to the same drain metallization and exposed tab. Using both pins reduces effective package inductance and current density per bond wire, improving high-frequency switching stability and thermal spreading across the PCB copper pour.

94-4737 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
31mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
29 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
750 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
57W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

94-4737 FAQ

1.How can I place an order for 94-4737 through Aetrix?

Please submit a Request for Quotation (RFQ) for 94-4737 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 94-4737 reliable?

The price and inventory of 94-4737 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 94-4737 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 94-4737 transactions.

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4.How is shipping managed for 94-4737?

94-4737 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 94-4737 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 94-4737?

For technical support, including 94-4737 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 94-4737 requirements.

6.How does Aetrix verify that 94-4737 is sourced from the original manufacturer or authorized distributors?

All 94-4737 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 94-4737 meets industry standards.

7.What is the process for return or replacement of 94-4737?

All 94-4737 units undergo pre-shipment inspection (PSI). If there is an issue with 94-4737, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 94-4737 part is unused and in its original packaging.

Return procedure for 94-4737:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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