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Infineon Technologies 94-4762

Part No.:
94-4762
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
Aetrix94-4762.pdf
Description:
MOSFET N-CH 55V 27A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,356

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Product details

Overview

IRFR4105PbF from Infineon Technologies (formerly International Rectifier) is a 55 V, 27 A N-channel enhancement-mode power MOSFET in D-PAK (TO-252AA) surface-mount package, featuring 45 mΩ RDS(on) at VGS = 10 V, fully avalanche-rated, and optimized for DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the IRFR4105PbF datasheet, IRFR4105PbF pinout, IRFR4105PbF application, or IRFR4105PbF equivalent, key selection criteria include its 55 V V(BR)DSS, 45 mΩ on-resistance, 100 A pulsed drain current, fast 49 ns rise time, and rugged unclamped inductive switching capability up to 65 mJ single-pulse avalanche energy.

Technical Context

This fifth-generation HEXFET device uses advanced silicon processing to minimize conduction losses while maintaining fast switching performance. Its gate charge profile (Qg = 34 nC, Qgd = 14 nC) supports efficient high-frequency operation in synchronous buck converters.

The integrated body diode exhibits 1.6 V forward voltage at 16 A and 57–86 ns reverse recovery time, enabling reliable freewheeling in hard-switched topologies. Thermal design is supported by 2.2 °C/W junction-to-case resistance and validated SOA curves up to 100 µs pulse width at 175 °C junction temperature.

Key Specifications

ParameterValue and Actual Design Meaning
V(BR)DSS55 V - Maximum blocking voltage before avalanche onset; sets upper limit for input voltage in 48 V bus applications.
RDS(on)0.045 Ω @ VGS = 10 V - Enables ≤1.2 W conduction loss at 16 A continuous drain current in PCB-mounted designs.
ID (TC = 25°C)27 A - Continuous current rating under ideal heatsinking; derates linearly at 0.45 W/°C above 25°C case temperature.
EAS65 mJ - Single-pulse avalanche energy rating; allows safe operation during inductive turn-off transients without external snubbers.
Qg34 nC - Total gate charge determines driver strength requirement; enables <100 ns switching with 18 Ω gate resistor.
tr/tf49 ns / 40 ns - Rise/fall times define minimum practical switching period; supports >500 kHz PWM in well-layouted PCBs.
VSD1.6 V @ IS = 16 A - Body diode forward drop impacts efficiency in bidirectional or synchronous rectification modes.

Pinout & Package

D-PAK (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; thermally enhanced for PCB copper pour mounting.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Low-side reference node; connects to ground or low-side switch node; carries full load current.
Pin 2 (Gate)Control terminal (G)High-impedance MOSFET control input; requires 10 V for full enhancement; sensitive to ESD.
Pin 3 (Drain)Power output terminal (D)Exposed metal pad - electrically and thermally connected to drain; must be soldered to large copper area for thermal management.

Key Features

FeatureDesign Value
Fully avalanche rated65 mJ single-pulse and 6.8 mJ repetitive avalanche energy - eliminates need for external clamping in inductive load switching.
Ultra-low RDS(on)45 mΩ at 10 V gate drive - reduces conduction losses by >30% vs. prior-gen 55 V MOSFETs in same package.
Fast switching7 ns turn-on delay + 49 ns rise time - enables high-frequency DC-DC operation with minimized switching loss.
Lead-free constructionPbF suffix confirms RoHS-compliant termination and solderability per JEDEC J-STD-020 reflow profile.
Thermally robust2.2 °C/W RθJC - allows 68 W power dissipation with minimal case-to-heatsink thermal interface resistance.

Applications

DC-DC Buck ConverterBrushed DC Motor Driver

Use Scenario: High-efficiency 12–48 V input to 3.3/5/12 V output conversion in programmable logic controllers and industrial HMIs.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–600 kHz with gate-driven dead-time control.

Use Value: 45 mΩ RDS(on) limits conduction loss to <1.2 W at 16 A, improving full-load efficiency by ≥2.5% over 65 mΩ alternatives.

Use Scenario: H-bridge drive for 24 V, 10 A brushed motors in automated valves and actuation systems.

IC Role / Device Role / Timing Role: Low-side quadrant switch handling bidirectional current and body-diode freewheeling during PWM decay.

Use Value: 1.6 V VSD and 57 ns trr reduce freewheeling loss and EMI vs. discrete diode solutions.

LED Constant-Current DriverOvercurrent Protection Switch

Use Scenario: Dimmable constant-current driver for high-brightness LED arrays in machine vision lighting.

IC Role / Device Role / Timing Role: PWM-controlled series pass element regulating LED string current up to 20 A.

Use Value: 100 A pulsed drain rating supports short-circuit current limiting without latch-up or thermal runaway.

Use Scenario: Solid-state replacement for electromechanical circuit breakers in 48 V telecom distribution panels.

IC Role / Device Role / Timing Role: Load switch with fast fault response using current-sense feedback and gate shutdown.

Use Value: 65 mJ EAS withstands inrush and short-circuit energy pulses without destruction during protection activation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STL100N5LF6AG60 V V(BR)DSS, 4.5 mΩ RDS(on), PowerFLAT 5x6 package, lower gate charge (28 nC)Higher current density but smaller thermal pad; requires tighter layout for thermal managementPreferred for space-constrained 60 V designs needing <5 mΩ on-resistance
ON Semiconductor NTMFS5C673NL60 V V(BR)DSS, 5.2 mΩ RDS(on), SO-8FL package, 32 nC Qg, no avalanche ratingLacks specified avalanche capability; unsuitable for unclamped inductive loadsLower-cost option only where inductive energy is externally clamped or negligible

Compared with STL100N5LF6AG and NTMFS5C673NL, IRFR4105PbF offers proven avalanche ruggedness and D-PAK thermal reliability at moderate on-resistance-making it optimal for industrial motor drives and 48 V power systems where transient robustness is non-negotiable.

Availability

IRFR4105PbF is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC power supplies, and LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFR4105PbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® product line delivers high-voltage, high-current MOSFETs engineered for rugged industrial switching-emphasizing avalanche capability, low RDS(on), and thermal reliability in TO-252 and TO-220 packages.

FAQ

What is the maximum recommended gate drive voltage for IRFR4105PbF?

The absolute maximum gate-to-source voltage is ±20 V, but the device achieves full enhancement at VGS = 10 V. Operating between 10 V and 15 V ensures optimal RDS(on) and switching speed while avoiding gate oxide stress. Gate drive below 4.0 V risks partial turn-on and excessive conduction loss due to its 2.0–4.0 V threshold range.

Can IRFR4105PbF be used in parallel configurations?

Yes-its positive temperature coefficient of RDS(on) (0.052 V/°C breakdown voltage drift) enables inherent current sharing. Successful paralleling requires matched gate drive impedance, symmetrical PCB layout, and shared source inductance minimization. Derate total current by 15% versus sum of individual ratings to account for thermal coupling.

Does IRFR4105PbF require a gate resistor, and what value is typical?

A gate resistor is mandatory to control dV/dt and prevent oscillation. For 300–500 kHz switching with a 1 A gate driver, 10–18 Ω is typical. Lower values (≤5 Ω) increase switching speed but risk ringing; higher values (>22 Ω) slow turn-on/off and raise switching loss. Layout parasitics must be minimized regardless of resistor choice.

How does the body diode performance compare to an external Schottky diode?

The integrated body diode has 1.6 V forward drop and 57–86 ns reverse recovery-higher loss and slower than most 45 V Schottky diodes (0.45–0.55 V, <10 ns). It suffices for low-frequency freewheeling but degrades efficiency above 100 kHz. For high-frequency synchronous rectification, external Schottky or GaN FETs are preferred despite added component count.

94-4762 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
55 V
Current - Continuous Drain (Id) @ 25°C:
27A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
45mOhm @ 16A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
700 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
68W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

94-4762 FAQ

1.How can I place an order for 94-4762 through Aetrix?

Please submit a Request for Quotation (RFQ) for 94-4762 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 94-4762 reliable?

The price and inventory of 94-4762 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 94-4762 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 94-4762 transactions.

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4.How is shipping managed for 94-4762?

94-4762 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 94-4762 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 94-4762?

For technical support, including 94-4762 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 94-4762 requirements.

6.How does Aetrix verify that 94-4762 is sourced from the original manufacturer or authorized distributors?

All 94-4762 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 94-4762 meets industry standards.

7.What is the process for return or replacement of 94-4762?

All 94-4762 units undergo pre-shipment inspection (PSI). If there is an issue with 94-4762, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 94-4762 part is unused and in its original packaging.

Return procedure for 94-4762:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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