STMicroelectronics A6387D

Overview

A6387D from STMicroelectronics is a high-voltage, automotive-qualified half-bridge gate driver IC for N-channel MOSFETs and IGBTs, featuring 550 V high-side rail capability, ±50 V/ns dV/dt immunity, 400 mA source / 650 mA sink output drive, and interlocking logic to prevent shoot-through. It drives inverters in HEV/EV powertrains.

For engineers reviewing the A6387D datasheet, A6387D pinout, A6387D application, or A6387D equivalent, key selection criteria include bootstrap diode integration, CMOS/TTL Schmitt-trigger inputs with hysteresis, SO-8 package thermal resistance (150 °C/W), and AEC-Q100 qualification for automotive-grade reliability.

Technical Context

The A6387D integrates a patented internal bootstrap DMOS structure-replacing external fast-recovery diodes-with typical R_DS(on) of 125 Ω and synchronous LVG-controlled charging. Its level-shifting architecture supports floating high-side operation up to 550 V referenced to OUT.

Interlocking logic ensures mutually exclusive HVG/LVG activation (HIN=1/LIN=1 forces both outputs low), while UV detection on V_CC (6.0 V turn-on, 5.5 V turn-off, 0.5 V hysteresis) guarantees safe startup and brownout protection across –40 °C to +125 °C.

Key Specifications

Pinout & Package

Package: SO-8 (ECOPACK® compliant), 150 °C/W junction-to-ambient thermal resistance, surface-mount, 1.27 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage half-bridge gate driver applications.

Compared with IR2104S and UCC27201A, the A6387D uniquely combines automotive qualification, integrated bootstrap, hardware interlock, and 550 V capability in SO-8-making it optimal for space- and reliability-critical HEV/EV and premium lighting designs.

Availability

A6387D is available at Aetrix Electronics and suitable for HEV/EV traction inverters, automotive HID ballasts, and industrial AC motor drives requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for A6387D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and consumer markets since 1987.

The A6387D belongs to ST's BCD™ "offline" high-voltage driver family, engineered specifically for robust, integrated gate driving in automotive power conversion systems where safety, reliability, and space efficiency are critical.

FAQ

What is the maximum allowable bootstrap capacitor voltage drop during operation?

The A6387D's internal bootstrap DMOS introduces a voltage drop calculated as V_drop ≈ (Q_gate/T_charge) × R_DS(on), where R_DS(on) = 125 Ω typ. For a 30 nC MOSFET gate and 5 µs charging time, drop is ~0.8 V. Total C_BOOT voltage loss must remain below V_BOOT's absolute max (568 V) minus required gate drive margin (typically ≥10 V).

Can the A6387D drive SiC MOSFETs?

Yes, but with design constraints: its 400 mA source/650 mA sink current and 50/30 ns switching times suit low-to-mid gate charge SiC devices (≤25 nC). Gate resistor selection must limit dv/dt to within ±50 V/ns; external Miller clamp may be needed for high-dV/dt SiC topologies due to lack of dedicated Miller clamping circuitry.

How does the interlock function behave during simultaneous HIN and LIN high inputs?

When both HIN and LIN are driven high, the A6387D's hardware interlock forces both HVG and LVG outputs low regardless of input timing-preventing shoot-through. This behavior is independent of propagation delays and occurs at the logic gate level, ensuring deterministic fail-safe operation even under transient MCU glitches.

Is an external bootstrap diode ever required with the A6387D?

An external diode is optional but recommended when C_BOOT recharge time is insufficient (e.g., very low duty cycle or high-frequency operation), or when V_OUT cannot reliably reach near-GND potential during LVG conduction. The internal DMOS requires adequate charging window duration; if V_drop exceeds 1.5 V or C_BOOT discharge dominates, external diode + RC snubber restores margin.