Analog Devices Inc. ADP3654ARHZ

Overview

ADP3654ARHZ from Analog Devices is a dual high-speed low-side MOSFET driver for N-channel power switches, delivering ±4 A peak source/sink current, 10 ns typical rise/fall time at 2.2 nF load, and matched propagation delays (≤2 ns channel-to-channel skew), operating from 4.5 V to 18 V supply across −40°C to +125°C junction range - used in synchronous rectification and high-frequency DC-DC converters.

For engineers reviewing the ADP3654ARHZ datasheet, ADP3654ARHZ pinout, ADP3654ARHZ application, or ADP3654ARHZ equivalent, key selection criteria include UVLO threshold (4.2 V typ), 3.3 V-compatible logic inputs, thermally enhanced MINI_SO_EP package with exposed pad, parallelable dual outputs, and precise delay matching for phase-critical gate drive timing.

Technical Context

The ADP3654ARHZ integrates two independent low-side drivers with internal pull-downs on INA/INB ensuring fail-safe off-state during floating input conditions. Its UVLO comparator features 4.2 V turn-on and 3.9 V turn-off thresholds with 0.3 V hysteresis, enabling robust startup/shutdown coordination between low-voltage digital controllers and high-voltage power stages.

Each output stage delivers matched propagation delays (tD1 = 14–30 ns, tD2 = 22–35 ns) and symmetric ±4 A peak current into capacitive loads, supporting parallel operation of OUTA and OUTB to double drive strength while maintaining thermal integrity via the MINI_SO_EP's 43°C/W θJA on JEDEC 4-layer board.

Key Specifications

Pinout & Package

The ADP3654ARHZ is housed in an 8-lead MINI_SO_EP package (RH-8-1) with exposed thermal pad electrically tied to die substrate (PGND reference), offering 43°C/W junction-to-ambient thermal resistance on JEDEC 4-layer board - optimized for compact high-power-density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual low-side MOSFET driver applications.

Compared with LM5113SDX/NOPB and UCC27524ADRMT, the ADP3654ARHZ uniquely combines precision UVLO hysteresis, MINI_SO_EP thermal efficiency (43°C/W), and ≤2 ns channel matching - making it optimal for high-reliability, high-frequency power conversion where timing integrity and thermal margin are critical.

Availability

ADP3654ARHZ is available at Aetrix Electronics and suitable for AC-to-DC switch mode power supplies, DC-to-DC power supplies, and synchronous rectification circuits requiring stable component supply, RoHS-compliant packaging, and guaranteed long-term industrial temperature support.

Supply support for ADP3654ARHZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Analog Devices is a global leader in high-performance analog, mixed-signal, and digital signal processing semiconductors, serving precision instrumentation, industrial automation, communications, and power management markets.

The ADP3654ARHZ belongs to Analog Devices' high-speed power driver product line, engineered specifically for high-frequency, high-current gate driving in energy-efficient power conversion systems - emphasizing timing accuracy, thermal resilience, and system-level reliability.

FAQ

What is the UVLO behavior of the ADP3654ARHZ and how does it protect the system?

The ADP3654ARHZ features a precise UVLO comparator with 4.2 V turn-on and 3.9 V turn-off thresholds and 0.3 V hysteresis. This ensures the driver remains disabled until VDD reaches a safe operating level and stays active until VDD drops below the hysteresis band - preventing erratic gate switching during brown-out conditions. The ADP3654ARHZ thus safeguards downstream MOSFETs from partial turn-on and shoot-through faults during power-up/down sequences.

Can the ADP3654ARHZ drive both N-channel MOSFETs and IGBTs?

Yes, the ADP3654ARHZ is explicitly designed to drive both enhancement-mode N-channel MOSFETs and insulated gate bipolar transistors (IGBTs), as confirmed in its Theory of Operation section. Its ±4 A peak output current and fast 10 ns rise/fall times support the gate charge requirements of high-power IGBTs, though external gate resistors may be needed to control dV/dt and prevent oscillation - consistent with standard practice for the ADP3654ARHZ.

What is the purpose of the exposed pad (EPAD) on the ADP3654ARHZ MINI_SO_EP package?

On the ADP3654ARHZ, the exposed pad (Pin 9) is electrically and thermally connected to the die substrate, which serves as the internal ground reference (PGND). It is not connected to any other pin. To ensure optimal thermal dissipation and electrical stability, the EPAD must be soldered to a large PCB copper pour tied to PGND - enabling the ADP3654ARHZ to achieve its rated 43°C/W θJA and maintain safe junction temperatures under continuous 4 A peak load.

Is the ADP3654ARHZ compatible with 3.3 V microcontrollers and digital PWM controllers?

Yes, the ADP3654ARHZ has 3.3 V-compatible digital inputs (INA and INB) with VIH = 2.0 V min and VIL = 0.8 V max, allowing direct interface with standard 3.3 V logic without level shifters. Its internal pull-down resistors guarantee a defined low state if the controller output floats - a key safety feature confirmed in the ADP3654ARHZ datasheet's Input Drive Requirements section.

How does parallel operation work for the ADP3654ARHZ dual outputs?

The ADP3654ARHZ supports parallel operation by connecting INA to INB and OUTA to OUTB, effectively doubling peak drive current to ±8 A while distributing thermal load. The datasheet specifies this configuration in Figure 17 and emphasizes careful PCB layout - especially symmetrical trace lengths and shared ground paths - to ensure balanced current sharing. This mode is fully supported and validated for the ADP3654ARHZ, enhancing drive capability without external components.