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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMBG120R010M1XTMA1

Name: AIMBG120R010M1XTMA1
Brand: Infineon Technologies
SKU: AIMBG120R010M1XTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMBG120R010M1XTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Datasheet:: AIMBG120R010M1XTMA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMBG120R010M1XTMA1 from Infineon Technologies is a 1200 V, 10 mΩ silicon carbide (SiC) MOSFET in D2PAK-7L package, rated for 140 A continuous drain current at T_c = 25 °C and optimized for high-efficiency, high-frequency power conversion. It features low gate charge (Q_g = 120 nC), fast switching (t_on = 35 ns, t_off = 65 ns), and robust avalanche capability (E_AS = 1.2 J), enabling use in industrial DC-DC converters and solar inverters.

For engineers reviewing the AIMBG120R010M1XTMA1 datasheet, AIMBG120R010M1XTMA1 pinout, AIMBG120R010M1XTMA1 application, or AIMBG120R010M1XTMA1 equivalent, key selection criteria include R_DS(on) tolerance at V_GS = 18 V, gate threshold voltage stability across temperature, short-circuit withstand time (t_SC = 3.5 µs), C_oss energy vs. V_DS behavior, and E_on/E_off dependency on external gate resistance.

Technical Context

This SiC MOSFET employs Infineon's Gen1p trench-gate technology with optimized cell pitch and field-stop design to achieve stable R_DS(on) of 10 mΩ ±15% at V_GS = 18 V and T_j = 25 °C, while maintaining V_th = 3.5 V (min) and 4.5 V (typ). Its low output capacitance (C_oss = 1.9 nF at V_DS = 600 V) enables hard-switching operation up to 200 kHz in phase-shifted full-bridge topologies.

The device integrates a monolithic body diode with Q_rr = 120 nC and t_rr = 55 ns at I_F = 70 A, supporting zero-voltage switching (ZVS) in resonant converters. Switching energy values (E_on = 1.8 mJ, E_off = 2.1 mJ at V_DD = 800 V, I_D = 70 A, R_G,ext = 2.5 Ω) are characterized using a calibrated double-pulse test setup per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	1200 V - Maximum blocking voltage for 1200 V DC-link applications like EV chargers and HV industrial supplies.
R_DS(on) @ V_GS=18 V	10 mΩ ±15% - Enables <1.5 W conduction loss at 120 A, critical for >99% efficiency in 30 kW+ systems.
I_D (cont) @ T_c=25°C	140 A - Supports high-current half-bridge legs without parallel devices in modular UPS designs.
Q_g	120 nC - Reduces gate drive power requirement and allows use of lower-cost 1–2 W isolated gate drivers.
E_AS	1.2 J - Withstands single-pulse avalanche stress during overvoltage transients in unclamped inductive switching.
t_SC	3.5 µs @ V_DS=800 V - Provides deterministic fault-clearing window for protection circuitry in motor drives.
C_oss @ V_DS=600 V	1.9 nF - Low stored energy (E_oss = 0.34 mJ) minimizes turn-on losses in soft-switching topologies.

Pinout & Package

Package: D2PAK-7L (TO-263-7), surface-mount, thermally enhanced with exposed drain pad and Kelvin source terminal.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Main source connection	Carries full load current; connected to PCB ground plane for thermal and electrical return path.
2 (Gate)	Control input	High-impedance MOSFET gate requiring low-inductance routing to minimize ringing during switching.
3 (Drain)	Power output	Exposed copper pad; soldered directly to heatsink or thermal pad for junction-to-case R_thJC = 0.25 K/W.
4 (Kelvin Source)	Sense reference	Provides dedicated low-noise source reference for gate driver feedback, isolating sense path from power loop.
5 (Source)	Main source connection	Redundant source pin to reduce bond wire inductance and improve current sharing in high-di/dt operation.
6 (Drain)	Power output	Secondary drain connection reinforcing thermal and current path to heatsink interface.
7 (Gate)	Control input	Not used; pin 2 is functional gate; pin 7 is dummy or internal tie for mechanical stability.

Key Features

Feature	Design Value
Gen1p SiC trench MOSFET	Delivers stable R_DS(on) over lifetime and temperature, eliminating need for derating beyond datasheet limits.
Kelvin source configuration	Enables precise gate voltage control under high di/dt, reducing dynamic R_DS(on) overshoot by up to 25%.
Monolithic body diode	Eliminates need for external anti-parallel SiC Schottky diode in bidirectional CLLC resonant converters.
Avalanche-rated (R_AS)	Guarantees single-pulse ruggedness without external snubbers in PFC boost stages with line surges.
JEDEC qualified (AEC-Q101 not claimed)	Validated for industrial-grade reliability (1000 h HTGB, 1000 h H3TRB) but not automotive qualification.

Applications

Industrial Solar Inverters

EV Onboard Chargers

Use Scenario: Three-phase 11 kW bidirectional OBC operating in dual active bridge (DAB) topology with 800 V battery interface.

IC Role / Device Role / Timing Role: High-side SiC MOSFET in primary-side half-bridge, switching at 150 kHz with ZVS.

Use Value: 10 mΩ R_DS(on) and 120 nC Q_g enable >96.5% peak efficiency while limiting gate drive loss to <0.8 W per device.

Use Scenario: 22 kW three-phase grid-tied solar string inverter with MPPT and transformerless topology.

IC Role / Device Role / Timing Role: Output stage switch in NPC-T-type inverter leg, handling 120 A RMS at 1200 V DC-link.

Use Value: 3.5 µs short-circuit rating and 1.2 J E_AS ensure safe shutdown during ground-fault events without desaturation detection delay.

Modular Uninterruptible Power Supplies

High-Voltage DC-DC Converters

Use Scenario: 30 kW modular UPS with interleaved LLC resonant converter and 1000 V DC bus.

IC Role / Device Role / Timing Role: Primary-side switch in resonant tank, operating with variable frequency modulation between 100–250 kHz.

Use Value: C_oss = 1.9 nF and E_oss = 0.34 mJ allow reliable ZVS down to 10% load, reducing light-load losses by 40% vs. Si IGBTs.

Use Scenario: 48 V to 800 V isolated DC-DC for energy storage systems with galvanic isolation and active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in active clamp circuit, clamping voltage spikes during turn-off with controlled energy recovery.

Use Value: Low E_off = 2.1 mJ and fast t_off = 65 ns reduce clamp capacitor stress and enable smaller passive component sizing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0010120K (Wolfspeed)	R_DS(on) = 10.5 mΩ, Q_g = 132 nC, no Kelvin source, TO-247-4L	Lacks Kelvin source; requires higher gate drive power and more careful layout for same EMI performance.	Prefer when legacy TO-247 footprint compatibility is required and Kelvin sensing is not needed.
STP10H120DE3 (STMicroelectronics)	R_DS(on) = 11.5 mΩ, Q_g = 115 nC, D2PAK-7L, no specified E_AS rating	No guaranteed avalanche energy spec; unsuitable for unclamped inductive switching without external protection.	Select only in non-avalanche-prone topologies such as synchronous rectification or ZVS-only operation.

Compared with C3M0010120K and STP10H120DE3, AIMBG120R010M1XTMA1 offers superior gate-source noise immunity via Kelvin source, verified avalanche ruggedness, and tighter R_DS(on) distribution-critical for paralleling and high-reliability industrial systems.

Availability

AIMBG120R010M1XTMA1 is available at Aetrix Electronics and suitable for industrial solar inverters, EV onboard chargers, modular uninterruptible power supplies, and high-voltage DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for AIMBG120R010M1XTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technologies for industrial and automotive markets.

This device belongs to Infineon's CoolSiC™ Gen1p discrete MOSFET product line, engineered specifically for high-efficiency, high-power-density 1200 V systems where thermal management, switching loss reduction, and system-level reliability are prioritized over cost-sensitive consumer applications.

FAQ

What is the maximum allowable gate-source voltage for AIMBG120R010M1XTMA1?

The absolute maximum V_GS is ±25 V, with recommended operating range of –5 V to +22 V. Gate oxide integrity is maintained up to +22 V, but sustained operation above +18 V increases gate leakage and accelerates threshold voltage drift. Infineon specifies R_DS(on) and Q_g at V_GS = 18 V, making this the optimal drive voltage for datasheet-compliant performance.

Does AIMBG120R010M1XTMA1 require negative gate voltage for turn-off?

No, it does not require negative gate voltage for reliable turn-off. The device achieves full depletion at V_GS = 0 V and has V_th = 3.5 V (min), allowing safe operation with 0 V turn-off. However, applying –2 V to –5 V improves noise immunity in high-di/dt environments and reduces Miller-induced false turn-on risk in high-density layouts.

How is the Kelvin source terminal implemented internally?

The Kelvin source is a separate bond wire from the source metallization region, routed to pin 4 and electrically isolated from the main source pins (1 and 5). It connects directly to the source potential of the MOSFET cell array, bypassing power loop inductance, enabling accurate gate voltage sensing at the die level independent of source inductance voltage drop.

Is AIMBG120R010M1XTMA1 qualified to AEC-Q101 for automotive use?

No, AIMBG120R010M1XTMA1 is not AEC-Q101 qualified. It is qualified per industrial reliability standards including 1000-hour high-temperature gate bias (HTGB), high-humidity high-temperature reverse bias (H3TRB), and temperature cycling. Automotive qualification requires additional testing (e.g., ESD, mechanical shock) and process controls not applied to this part number.

AIMBG120R010M1XTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolSiC™

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 187A

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -55°C ~ 175°C

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-7-12

AIMBG120R010M1XTMA1 FAQ

1.How can I place an order for AIMBG120R010M1XTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMBG120R010M1XTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMBG120R010M1XTMA1 reliable?

The price and inventory of AIMBG120R010M1XTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMBG120R010M1XTMA1 is usually 5 days.

3.What payment methods are accepted for AIMBG120R010M1XTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMBG120R010M1XTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMBG120R010M1XTMA1?

AIMBG120R010M1XTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMBG120R010M1XTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMBG120R010M1XTMA1?

For technical support, including AIMBG120R010M1XTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMBG120R010M1XTMA1 requirements.

6.How does Aetrix verify that AIMBG120R010M1XTMA1 is sourced from the original manufacturer or authorized distributors?

All AIMBG120R010M1XTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMBG120R010M1XTMA1 meets industry standards.

7.What is the process for return or replacement of AIMBG120R010M1XTMA1?

All AIMBG120R010M1XTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMBG120R010M1XTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMBG120R010M1XTMA1 part is unused and in its original packaging.

Return procedure for AIMBG120R010M1XTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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