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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZH120R080M1TXKSA1

Name: AIMZH120R080M1TXKSA1
Brand: Infineon Technologies
SKU: AIMZH120R080M1TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZH120R080M1TXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZH120R080M1TXKSA1.pdf

Description:: SIC_DISCRETE

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Product details

Overview

AIMZH120R080M1TXKSA1 from Infineon is a 1200 V, 31 A silicon carbide (SiC) trench MOSFET in PG-TO247-4-U03 package with Kelvin source sensing, optimized for high-voltage DC/DC converters and on-board chargers. It delivers R_DS(on) = 80 mΩ (typ.) at V_GS = 20 V and T_vj = 25 °C, features Crss/Ciss ratio < 0.003, V_GS(th) = 4.4 V (typ.), and supports unipolar 0 V/20 V gate driving to prevent parasitic turn-on.

For engineers reviewing the AIMZH120R080M1TXKSA1 datasheet, AIMZH120R080M1TXKSA1 pinout, AIMZH120R080M1TXKSA1 application, or AIMZH120R080M1TXKSA1 equivalent, key selection criteria include its 1.5 µs short-circuit withstand time at 20 V gate drive, 92 µJ total switching energy at 25 °C, 7.07 mm minimum creepage distance for HV isolation, and AEC-Q101 qualification for automotive power electronics.

Technical Context

This SiC MOSFET employs Infineon's Gen1p chip technology with .XT die attach for low thermal resistance (R_th(j–c) = 0.68 K/W typ.) and integrated Kelvin source terminal to decouple power and sense paths-enabling precise gate control independent of source inductance. Its high V_GS(th) (3.7–5.1 V) and ultra-low Crss (2 pF) suppress Miller-induced false turn-on under fast dV/dt conditions.

The device operates across –55 °C to +175 °C junction temperature range and is rated for 1200 V drain-source blocking. It supports hard-switched topologies with E_on = 58 µJ and E_off = 34 µJ at 800 V, 10 A, and exhibits low C_iss = 671 pF and C_oss = 35 pF-enabling >1 MHz switching while maintaining robust avalanche capability (E_AS = 136 mJ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - Enables direct use in 800 V battery systems with 50 % voltage margin for transient overvoltage protection.
R_DS(on)	80 mΩ (typ., 25 °C, 20 V) - Delivers low conduction loss in high-power DC/DC stages; rises to 159 mΩ at 175 °C for accurate thermal design.
Q_G(tot)	24 nC - Reduces gate driver power demand and enables compact, efficient isolated gate driver design.
C_rss/C_iss	0.003 (2 pF / 671 pF) - Minimizes Miller feedback, allowing reliable unipolar 0 V/20 V gate control without negative bias.
t_SC	1.5 µs (at 20 V V_GS) - Provides deterministic short-circuit response time for fault protection circuitry in OBC and traction inverters.
E_tot	92 µJ (25 °C) - Low total switching energy reduces heatsink size and improves system power density in 10–50 kW converters.
R_th(j–c)	0.68 K/W (typ.) - Enables high power dissipation (169 W at T_c = 25 °C) with minimal junction-to-case temperature rise.

Pinout & Package

Package: PG-TO247-4-U03 - 4-pin through-hole package with isolated Kelvin source terminal, optimized for high-current SiC switching and low-inductance gate loop layout. Minimum creepage distance 7.07 mm meets reinforced insulation requirements for 1200 V systems.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main power drain connection	High-current path carrying full load current; electrically tied to heatsink-compatible metal tab.
2 – Source	Main power source return	Carries high di/dt current; must be routed with low inductance to minimize voltage overshoot during switching.
3 – Kelvin Sense	Source potential reference for gate control	Provides gate driver feedback path isolated from power source inductance-critical for stable V_GS regulation.
4 – Gate	Control input for channel modulation	Receives 0 V/20 V unipolar drive; internal R_G,int = 3.8 Ω limits ringing and simplifies external gate resistor selection.

Key Features

Feature	Design Value
Sense pin (Kelvin source)	Enables accurate gate-source voltage regulation independent of source inductance, eliminating Miller-induced false turn-on in high-dV/dt environments.
Gen1p SiC trench technology	Improves R_DS(on) × Q_G figure-of-merit by >20 % vs prior generation-reducing combined conduction and switching losses.
AEC-Q101 qualified	Validated for automotive-grade reliability including temperature cycling, HTRB, and UIS stress-suitable for OBC and auxiliary drive applications.
.XT die attach	Reduces thermal resistance by ~15 % vs standard solder die attach-improving long-term power cycling endurance and thermal stability.
Unipolar gate drive support	High V_GS(th) (4.4 V typ.) and low Crss enable robust 0 V/20 V operation without negative bias, simplifying gate driver architecture.

Applications

On-Board Charger (OBC)

High-Voltage DC/DC Converter

Use Scenario: Bidirectional 11 kW AC/DC + DC/DC stage converting grid AC to 400/800 V battery bus with regenerative capability.

IC Role / Device Role / Timing Role: Primary high-side SiC switch in interleaved totem-pole PFC and isolated dual-active-bridge (DAB) topology.

Use Value: 92 µJ switching energy and 1.5 µs short-circuit rating enable high-frequency (100–300 kHz), high-efficiency (>97 %) operation with deterministic fault handling.

Use Scenario: 3.3 kW isolated DC/DC stage stepping down 800 V battery to 48 V or 12 V for vehicle subsystems.

IC Role / Device Role / Timing Role: High-side primary-side switch in phase-shifted full-bridge (PSFB) or DAB converter operating up to 500 kHz.

Use Value: 80 mΩ R_DS(on) and 0.68 K/W R_th(j–c) allow >98 % peak efficiency at full load with air-cooled heatsinks.

Auxiliary Power Supply

Traction Inverter Auxiliary Stage

Use Scenario: 1–2 kW isolated flyback or half-bridge converter powering vehicle control units, sensors, and gate drivers.

IC Role / Device Role / Timing Role: Primary switch in high-input-voltage flyback delivering regulated 12 V/5 V outputs from 400–800 V bus.

Use Value: 1200 V rating and 7.07 mm creepage distance eliminate need for external isolation barriers-reducing BOM count and footprint.

Use Scenario: Dedicated 500 W–1 kW auxiliary supply for traction inverter gate drivers and cooling pumps in EV powertrain.

IC Role / Device Role / Timing Role: High-reliability switch in LLC resonant converter operating continuously at elevated ambient temperatures.

Use Value: AEC-Q101 qualification and 175 °C max junction temperature ensure uninterrupted operation under under-hood thermal stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K	R_DS(on) = 65 mΩ (lower), but no Kelvin source; Q_G = 32 nC (higher); Crss/Ciss = 0.004.	Lacks dedicated sense pin-requires careful PCB layout to mitigate gate oscillation in high-dV/dt layouts.	Preferred where lowest conduction loss dominates and gate drive layout can be tightly controlled.
STW48N120K5	R_DS(on) = 85 mΩ; Q_G = 27 nC; includes Kelvin source; AEC-Q101 qualified; Crss/Ciss = 0.0025.	Higher R_DS(on) increases conduction loss, but lower Crss improves noise immunity in noisy ECU environments.	Better suited for cost-sensitive auxiliary supplies where moderate efficiency and high noise immunity are prioritized.

Compared with C3M0065120K and STW48N120K5, AIMZH120R080M1TXKSA1 offers the optimal balance of Kelvin-sense reliability, 80 mΩ conduction performance, and 0.003 Crss/Ciss ratio-making it ideal for production-critical OBC and DAB designs requiring both efficiency and robustness.

Availability

AIMZH120R080M1TXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC/DC converters, and auxiliary power supplies requiring stable component supply across automotive and industrial EV infrastructure programs.

Supply support for AIMZH120R080M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This part belongs to Infineon's CoolSiC™ Gen1p trench MOSFET product line, engineered specifically for high-efficiency, high-power-density automotive and industrial power conversion systems operating above 750 V.

FAQ

What gate drive voltage is recommended for AIMZH120R080M1TXKSA1?

The datasheet specifies 20 V turn-on and 0 V turn-off as recommended values. This unipolar drive leverages the device's high V_GS(th) (3.7–5.1 V) and ultra-low Crss to avoid parasitic turn-on-eliminating the need for negative bias while ensuring low R_DS(on) and robust noise immunity.

Does AIMZH120R080M1TXKSA1 include a body diode, and how is it characterized?

Yes-it integrates a SiC body diode with V_SD = 3.9 V (typ., 25 °C) and Q_fr = 143 nC. The diode supports synchronous rectification in bridge configurations and is rated for 22.7 A continuous reverse current at 25 °C case temperature, with 78 A peak capability under defined pulse conditions.

Is AIMZH120R080M1TXKSA1 qualified for automotive use?

Yes-it is fully qualified per AEC-Q101 for discrete semiconductors, including stress tests for temperature cycling, highly accelerated life testing (HALT), and unclamped inductive switching (UIS). This validation covers operation from –55 °C to +175 °C junction temperature in automotive powertrain and charging systems.

How does the Kelvin source pin improve switching performance?

The Kelvin source pin provides a dedicated low-inductance return path for the gate driver, isolating gate control from high-di/dt power source current. This prevents voltage drop across source inductance from distorting V_GS, enabling precise turn-on/turn-off timing and eliminating Miller-induced false triggering-even at dV/dt > 50 V/ns.

AIMZH120R080M1TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 10A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 671 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 169W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-11

AIMZH120R080M1TXKSA1 FAQ

1.How can I place an order for AIMZH120R080M1TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZH120R080M1TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZH120R080M1TXKSA1 reliable?

The price and inventory of AIMZH120R080M1TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZH120R080M1TXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZH120R080M1TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZH120R080M1TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZH120R080M1TXKSA1?

AIMZH120R080M1TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZH120R080M1TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZH120R080M1TXKSA1?

For technical support, including AIMZH120R080M1TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZH120R080M1TXKSA1 requirements.

6.How does Aetrix verify that AIMZH120R080M1TXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZH120R080M1TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZH120R080M1TXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZH120R080M1TXKSA1?

All AIMZH120R080M1TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZH120R080M1TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZH120R080M1TXKSA1 part is unused and in its original packaging.

Return procedure for AIMZH120R080M1TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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