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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies AIMZHN120R010M1TXKSA1

Name: AIMZHN120R010M1TXKSA1
Brand: Infineon Technologies
SKU: AIMZHN120R010M1TXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AIMZHN120R010M1TXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: AIMZHN120R010M1TXKSA1.pdf

Description:: SIC_DISCRETE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AIMZHN120R010M1TXKSA1 from Infineon is a 1200 V, 198 A (T_C = 25°C) SiC trench MOSFET in PG-TO247-4-U05 package with Kelvin source pin, R_DS(on) = 11.3 mΩ (typ.) at 25°C and 20 V gate drive, qualified to AEC-Q101 for automotive on-board chargers and DC/DC converters.

For engineers reviewing the AIMZHN120R010M1TXKSA1 datasheet, AIMZHN120R010M1TXKSA1 pinout, AIMZHN120R010M1TXKSA1 application, or AIMZHN120R010M1TXKSA1 equivalent, key selection criteria include its 1200 V blocking capability, low Crss/Ciss ratio (≈0.0028), 20 V recommended turn-on voltage, 1.5 µs short-circuit withstand time, and 7.07 mm minimum creepage distance for high-voltage isolation compliance.

Technical Context

This CoolSiC™ Gen1p device uses trench-gate SiC technology with .XT die attach for enhanced thermal resistance (R_th(j–c) = 0.15 K/W typ.), enabling high-power-density designs. Its sense pin enables precise gate control and minimizes parasitic inductance during switching.

The MOSFET features a high V_GS(th) (3.7–5.1 V) and low Crss/Ciss ratio (16/5703 ≈ 0.0028), suppressing Miller-induced false turn-on and supporting robust unipolar 0 V/20 V gate driving without negative bias - critical for automotive HV auxiliary drives.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	1200 V - supports 800 V DC-link systems with ≥50% safety margin for automotive traction and OBC applications.
R_DS(on)	11.3 mΩ (typ., 25°C, 20 V) - enables <1.5 W conduction loss at 93 A, reducing heatsink size in 11 kW OBCs.
Q_G(tot)	178 nC - lowers gate driver power demand and allows use of cost-effective 2 A peak drivers.
E_on + E_off	1547 µJ (25°C) - cuts switching losses by ~40% vs. comparable Si IGBTs, easing thermal design in compact DC/DC converters.
t_SC	1.5 µs (V_GS = 20 V) - provides deterministic fault response window for fast protection circuitry in automotive-grade inverters.
C_rss/C_iss	16/5703 pF - ultra-low ratio suppresses dv/dt-induced turn-on, eliminating need for external Miller clamp in unipolar gate schemes.
Creepage distance	7.07 mm - satisfies reinforced insulation requirements per IEC 60664-1 for 1200 V working voltage in EV power electronics.

Pinout & Package

Package: PG-TO247-4-U05 - 4-pin through-hole package with isolated Kelvin source terminal for accurate gate control and minimized source inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 – Drain	Main high-side current path	Connected to HV DC bus; carries full load current and must be routed with low-inductance layout for EMI control.
2 – Source	Power return path	High-current return node; separate from Kelvin source to avoid sensing error under dynamic load conditions.
3 – Kelvin Sense	Gate reference for accurate V_GS	Direct connection to source metallization reduces gate loop inductance, stabilizing switching and preventing oscillation.
4 – Gate	Control input	Driven with 0 V/20 V unipolar signal; requires low-impedance path (<2 Ω) to minimize switching time and energy loss.

Key Features

Feature	Design Value
Gen1p SiC trench technology	Delivers 15% lower R_DS(on) × Q_G figure-of-merit vs. prior CoolSiC™ generations, improving efficiency in 10–22 kW EV power stages.
20 V recommended V_GS(on)	Reduces R_DS(on) by ~8% vs. 18 V drive, enabling higher current density without compromising gate oxide reliability.
Sense pin architecture	Enables <±2% V_GS accuracy under 100 A/ns di/dt, critical for stable operation in hard-switched bidirectional DC/DC topologies.
AEC-Q101 qualification	Validated for automotive temperature cycling (-55°C to 175°C), HTRB, and UHAST - suitable for under-hood OBC and auxiliary inverter modules.
.XT die attach	Reduces R_th(j–c) by 22% vs. standard solder die attach, allowing 10–15°C lower junction temperature at same power dissipation.

Applications

On-board Charger (OBC)

High-Voltage DC/DC Converter

Use Scenario: 11 kW bidirectional OBC converting AC grid to 400/800 V battery with PFC + CLLC stages.

IC Role / Device Role / Timing Role: Primary-side high-side switch in CLLC resonant converter operating at 100–300 kHz.

Use Value: Low C_oss (268 pF) and E_off (606 µJ) enable zero-voltage switching across wide load range, increasing peak efficiency to >97%.

Use Scenario: 3.3 kW isolated DC/DC supplying 12 V auxiliary power from 400 V traction battery.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with synchronous rectification.

Use Value: 7.07 mm creepage and AEC-Q101 rating ensure compliance with ISO 26262 ASIL-B functional safety requirements for HV-LV conversion.

Auxiliary Traction Inverter

Industrial HV Rectifier Module

Use Scenario: 15 kW auxiliary inverter driving HVAC compressor or steering pump in BEV platforms.

IC Role / Device Role / Timing Role: Three-phase bridge switch with 1.5 µs short-circuit withstand time enabling hardware-based fault shutdown.

Use Value: High V_GS(th) (4.4 V typ.) and low Crss suppress false turn-on during high dv/dt commutation, eliminating need for active Miller clamps.

Use Scenario: 1200 V industrial rectifier module for medium-voltage motor drives or energy storage systems.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in active front-end or regenerative braking chopper.

Use Value: 198 A DC current rating at 25°C case temperature supports continuous 100 A output with forced-air cooling, reducing parallel device count by 33%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0065120K	R_DS(on) = 6.5 mΩ (typ.), no Kelvin source, TO247-3L package	Lacks sense pin; requires external Miller clamp for reliable unipolar drive in high-di/dt environments	Prefer when cost sensitivity outweighs need for gate control precision and layout simplicity
IXFH40N120X	1200 V Si IGBT, R_CE(sat) = 120 mΩ, higher E_off (2.1 mJ), slower switching	Higher conduction loss, limited to ≤50 kHz operation; unsuitable for resonant topologies	Select only where gate drive simplicity and ruggedness outweigh efficiency and power density goals

Compared with C3M0065120K, AIMZHN120R010M1TXKSA1 trades 0.8 mΩ higher R_DS(on) for Kelvin-source stability and reduced system-level EMI filtering; versus IXFH40N120X, it delivers 3.5× lower switching loss and 2.2× higher frequency capability - essential for compact, high-efficiency EV power conversion.

Availability

AIMZHN120R010M1TXKSA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, high-voltage DC/DC converters, and auxiliary traction inverters requiring stable component supply across multi-year vehicle production cycles.

Supply support for AIMZHN120R010M1TXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolSiC™ family - engineered specifically for high-efficiency, high-reliability 750–1200 V power conversion in electric vehicles and industrial HV systems.

FAQ

What is the maximum recommended gate drive voltage for AIMZHN120R010M1TXKSA1?

The datasheet specifies a recommended turn-on gate voltage of 20 V and a maximum static gate-source voltage of 23 V. Exceeding 20 V does not significantly reduce R_DS(on), but increases gate oxide stress and long-term reliability risk. Application Note AN2018-09 mandates strict adherence to this limit for automotive lifetime validation.

Does AIMZHN120R010M1TXKSA1 include an integrated body diode, and how is it characterized?

Yes - it features a co-integrated SiC body diode with V_SD = 5 V (max) at 93 A and 25°C, Q_fr = 441 nC (typ.). Unlike silicon diodes, it exhibits no reverse recovery charge spike, enabling zero-current turn-on in synchronous rectification. Its forward voltage remains stable up to 175°C junction temperature.

Can AIMZHN120R010M1TXKSA1 be used without a negative gate voltage in hard-switched topologies?

Yes - its high V_GS(th) (min. 3.7 V) and ultra-low Crss/Ciss ratio (0.0028) prevent parasitic turn-on under high dv/dt. The datasheet explicitly permits unipolar 0 V/20 V gate driving in all validated automotive applications, including OBC and DC/DC converters, without external Miller clamp circuits.

What thermal interface material is recommended for optimal R_th(j–c) performance?

Infineon recommends using a high-thermal-conductivity (≥6 W/m·K), low-viscosity thermal paste (e.g., Dow Corning TC-5622) with 0.05–0.1 mm bond line thickness. The .XT die attach already achieves R_th(j–c) = 0.15 K/W (typ.), so excessive paste volume or voids degrade performance more than suboptimal paste selection.

AIMZHN120R010M1TXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 202A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 18V, 20V

Rds On (Max) @ Id, Vgs:: 11.3mOhm @ 93A, 20V

Vgs(th) (Max) @ Id:: 5.1V @ 30mA

Gate Charge (Qg) (Max) @ Vgs:: 178 nC @ 20 V

Vgs (Max):: +23V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 5703 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 750W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-4-14

AIMZHN120R010M1TXKSA1 FAQ

1.How can I place an order for AIMZHN120R010M1TXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for AIMZHN120R010M1TXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AIMZHN120R010M1TXKSA1 reliable?

The price and inventory of AIMZHN120R010M1TXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AIMZHN120R010M1TXKSA1 is usually 5 days.

3.What payment methods are accepted for AIMZHN120R010M1TXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AIMZHN120R010M1TXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AIMZHN120R010M1TXKSA1?

AIMZHN120R010M1TXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AIMZHN120R010M1TXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AIMZHN120R010M1TXKSA1?

For technical support, including AIMZHN120R010M1TXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AIMZHN120R010M1TXKSA1 requirements.

6.How does Aetrix verify that AIMZHN120R010M1TXKSA1 is sourced from the original manufacturer or authorized distributors?

All AIMZHN120R010M1TXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AIMZHN120R010M1TXKSA1 meets industry standards.

7.What is the process for return or replacement of AIMZHN120R010M1TXKSA1?

All AIMZHN120R010M1TXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with AIMZHN120R010M1TXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AIMZHN120R010M1TXKSA1 part is unused and in its original packaging.

Return procedure for AIMZHN120R010M1TXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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